AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 100V 43A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 7V) < 30mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View Top View Bottom View TO-251A IPAK D Bottom View D D D G S G S S G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A C Units V ±25 V A 100 7.5 IDSM TA=70°C Maximum 100 30 IDM TA=25°C S D 43 ID TC=100°C G A 6 Avalanche Current C IAS, IAR 28 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 39 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev1 : May 2012 3 Steady-State Steady-State RθJA RθJC W 1.9 TJ, TSTG Symbol t ≤ 10s W 50 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 PD -55 to 175 Typ 8 35 1 www.aosmd.com °C Max 10 42 1.5 Units °C/W °C/W °C/W Page 1 of 7 AOD4126/AOI4126 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 100 nA 4 V 19 24 36 43 VGS=7V, ID=15A 23.5 30 mΩ 34 1 V 40 A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime A 0.66 mΩ S 1400 1770 2200 pF VGS=0V, VDS=50V, f=1MHz 115 165 214 pF 33 55 80 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.65 1.0 Ω 14 28 42 nC 4 9 14 nC 10 14 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 100 Static Drain-Source On-Resistance Output Capacitance Units 3.3 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V VGS(th) RDS(ON) Typ VGS=10V, VDS=50V, ID=20A 6 12 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12 20 26 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 60 82 110 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 4 ns 17 ns 5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : May 2012 www.aosmd.com Page 2 of 7 AOD4126/AOI4126 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 8V VDS=5V 7V 50 40 ID(A) ID (A) 40 6.5V 30 20 20 125°C VGS=6V 10 25°C 0 0 0 1 2 3 4 3 5 30 6 7 Normalized On-Resistance 2.4 27 VGS=7V 24 21 VGS=10V 18 2.2 VGS=10V ID=20A 2 1.8 1.6 1.4 VGS=7V ID=15A 1.2 17 5 2 10 1 0.8 15 0 5 10 15 20 25 30 35 0 40 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 1.0E+02 ID=20A 1.0E+01 1.0E+00 40 IS (A) 40 RDS(ON) (mΩ Ω) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ Ω) 4 125°C 30 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 1.0E-04 20 25°C 1.0E-05 0.0 10 6 7 8 9 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: May 2012 www.aosmd.com Page 3 of 7 AOD4126/AOI4126 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=50V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1500 1000 Coss 2 Crss 500 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000 1000.0 10µs 100.0 TJ(Max)=175°C TC=25°C 800 10.0 100µs 1ms 1.0 10ms DC 0.1 Power (W) ID (Amps) 10µs RDS(ON) limited TJ(Max)=175°C TC=25°C 400 200 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 10 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 17 5 2 10 600 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: May 2012 www.aosmd.com Page 4 of 7 AOD4126/AOI4126 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 120 TA=25°C TA=100°C TA=150°C 90 60 30 TA=125°C 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 1000 60 TA=25°C 50 100 40 17 5 2 10 Power (W) Current rating ID(A) 175 30 10 20 10 1 0 0 Zθ JA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.01 175 1 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=42°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: May 2012 www.aosmd.com Page 5 of 7 AOD4126/AOI4126 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 24 2 125ºC 125ºC 250 Irm 150 6 125ºC Qrr 1 0.8 S 50 0.4 4 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 150 30 30 10 Irm 200 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: May 2012 18 2.5 25ºC trr 1.5 12 1 125ºC 6 -2 0 125ºC Is=20A 2 0 30 3 6 25ºC 25 2 Irm (A) Qrr (nC) 14 125ºC 20 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 24 18 25ºC Qrr 15 30 22 90 10 26 125ºC 120 5 trr (ns) Is=20A 0.2 25ºC 0 10 0.6 125ºC 25ºC 5 1.2 12 3 60 25ºC 8 100 0 trr trr (ns) 25ºC Irm (A) Qrr (nC) 9 1.6 1.4 16 200 1.8 di/dt=800A/µs 20 12 S 15 di/dt=800A/µs S 300 S 25ºC 0 0 200 400 0.5 0 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AOD4126/AOI4126 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: May 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7