UNISONIC TECHNOLOGIES CO., LTD 5NNPP03 Power MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 5NNPP03 is a complementary enhancement mode MOSFET H-BRIDGE, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage. The UTC 5NNPP03 is universally applied in DC-AC Inverters and DC Motor control. SOP-8 FEATURES * N-CHANNEL - ID: 5.0A / VDSS: 30V * P-CHANNEL - ID: -4.1A / VDSS: -30V * High switching speed SYMBOL ORDERING INFORMATION Ordering Number 5NNPP03G-S08-R www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package SOP-8 Packing Tape Reel 1 of 5 QW-R209-075.a 5NNPP03 MARKING PIN CONFIGURATION Preliminary UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 2 of 5 QW-R209-075.a 5NNPP03 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) RATINGS UNIT N-CHANNEL P-CHANNEL Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous (Note 3) ID 5.0 -4.1 A Drain Current 22.9 -19.6 A Pulsed (Note 4) IDM TA=25°C (Note 2) 0.87 W Power Dissipation PD Derating 6.94 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. 3. except the device is measured at t ≤ 10 sec. 4. Pulse width ≤ 300μs; duty cycle ≤ 2%. The pulse current is limited by the maximum junction temperature. PARAMETER SYMBOL THERMAL CHARACTERISTICS (Note 4) PARAMETER SYMBOL θJA Junction to Ambient RATINGS 144 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=5A VGS=4.5V, ID=4A 1.0 RDS(ON) DYNAMIC PARAMETERS Input Capacitance (Note 3) CISS VGS=0V, VDS=15V, Output Capacitance (Note 3) COSS f=1.0MHz Reverse Transfer Capacitance (Note 3) CRSS Gate Charge Total Gate Charge (Note 3) QG VDS=15V,VGS=10V, ID=5A Gate to Source Charge (Note 3) QGS Gate to Drain Charge (Note 3) QGD SWITCHING PARAMETERS Turn-ON Delay Time (Note 2, 3) tD(ON) Rise Time (Note 2, 3) tR VDD=15V, VGS=10V ID=1A, RG=6Ω Turn-OFF Delay Time (Note 2, 3) tD(OFF) Fall-Time (Note 2, 3) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS (Note 2, 3) Maximum Body-Diode Pulsed Current (Note 2, 3) ISM Drain-Source Diode Forward Voltage(Note 1) VSD IS=1.7A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.5 ±100 V µA nA 3.0 25 45 V mΩ mΩ 430 101 56 pF pF pF 9.0 1.7 2.0 nC nC nC 2.5 3.3 11.5 6.3 ns ns ns ns 2.0 A 22.9 0.82 A V 3 of 5 QW-R209-075.a 5NNPP03 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS ID=-250µA, VGS=0V VDS=-60V, VGS=0V VGS=±20V, VDS=0V -30 VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A -1.0 RDS(ON) DYNAMIC PARAMETERS (Note 3) Input Capacitance CISS VGS=0V, VDS=-15V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS Gate Charge Total Gate Charge (Note 3) QG VDS=-15V, VGS=-10V, Gate to Source Charge (Note 3) QGS ID=-5A Gate to Drain Charge (Note 3) QGD SWITCHING PARAMETERS Turn-ON Delay Time (Note 2, 3) tD(ON) Rise Time (Note 2, 3) tR VDD=-15V, VGS=-10V ID=-1A, RG=6Ω Turn-OFF Delay Time (Note 2, 3) tD(OFF) Fall-Time (Note 2, 3) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TA=25°C (Note 1, 3) Maximum Body-Diode Pulsed Current (Note 2, 3) ISM TA=25°C Drain-Source Diode Forward Voltage(Note 1) VSD IS=-1.7A, VGS=0V Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. For design aid only, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -0.5 ±100 V µA nA -3.0 50 75 V mΩ mΩ 670 126 70 pF pF pF 12.7 2.0 2.4 nC nC nC 1.9 3.0 30 21 ns ns ns ns -2.0 A -19.6 -0.82 -1.2 A V 4 of 5 QW-R209-075.a 5NNPP03 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT QG 12V 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-075.a