INTERSIL HFA1112MJ/883

HFA1112/883
TM
Ultra High Speed
Programmable Gain Buffer Amplifier
June 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HFA1112/883 is a closed loop buffer that achieves a
high degree of gain accuracy, wide bandwidth, and low distortion. Manufactured on the Intersil proprietary complementary bipolar UHF-1 process, the HFA1112/883 also offers
very fast slew rates, and high output current.
• User Programmable For Closed-Loop Gains of +1, -1
or +2 Without Use of External Resistors
A unique feature of the pinout allows the user to select a
voltage gain of +1, -1, or +2, without the use of any external
components. The result is a more flexible product, fewer part
types in inventory, and more efficient use of board space.
• Low Differential Gain and Phase . . . . .0.02%/0.04 Deg.
• Low Distortion (HD3, 30MHz) . . . . . . . . . . -73dBc (Typ)
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)
Component and composite video systems will also benefit
from this buffer’s performance, as indicated by the excellent
gain flatness, and 0.02%/0.04 Deg. Differential Gain/Phase
specifications (R L = 150Ω).
• Very High Slew Rate . . . . . . . . . . . . . . . 2400V/µs (Typ)
• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 13ns (Typ)
• Excellent Gain Flatness (to 100MHz) . . . . 0.07dB (Typ)
Compatibility with existing op amp pinouts provides flexibility
to upgrade low gain amplifiers, while decreasing component
count. Unlike most buffers, the standard pinout provides an
upgrade path should a higher closed loop gain be needed at
a future date.
• Excellent Gain Accuracy . . . . . . . . . . . . . . 0.99V/V (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ)
• Fast Overdrive Recovery . . . . . . . . . . . . . . <10ns (Typ)
This amplifier is available with programmable output clamps
as the HFA1113/883. For applications requiring a standard
buffer pinout, please refer to the HFA1110/883 datasheet.
Applications
• Video Switching and Routing
• Pulse and Video Amplifiers
Ordering Information
• Wideband Amplifiers
• RF/IF Signal Processing
• Flash A/D Driver
PART NUMBER
TEMPERATURE
RANGE
PACKAGE
HFA1112MJ/883
-55oC to +125oC
8 Lead Ceramic DIP
• Medical Imaging Systems
Pinout
HFA1112/883
(CERDIP)
TOP VIEW
1
300
8
NC
-
NC
7
V+
300
2
+IN
3
6
OUT
V-
4
5
NC
+
-IN
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
184
Spec Number
511084-883
FN3610.1
Specifications HFA1112/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VOutput Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . . ±55mA
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Storage Temperature Range . . . . . . . . . . . . . . -65oC ≤ TA ≤ +150oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
CerDIP Package . . . . . . . . . . . . . . . . . 115oC/W
30oC/W
Maximum Package Power Dissipation at +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W
Package Power Dissipation Derating Factor above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
Operating Temperature Range. . . . . . . . . . . . .-55oC ≤ TA ≤ +125oC
RL Š≥ 50Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at VSUPPLY = ±5V, RSOURCE = 0Ω, RL = 100Ω, VOUT = 0V, Unless Otherwise Specified.
D.C. PARAMETERS
SYMBOL
Output Offset Voltage
VOS
Power Supply
Rejection Ratio
PSRRP
PSRRN
Non-Inverting Input
(+IN) Current
IBSP
+IN Common
Mode Rejection
CMS IBP
+IN Resistance
+RIN
Gain
(VOUT = 2VP-P)
AVP1
Gain
(VOUT = 2VP-P)
AVM1
Gain
(VOUT = 4VP-P)
AVP2
Output Voltage
Swing
VOP100
VON100
Output Voltage
Swing
VOP50
VON50
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-25
25
mV
VCM = 0V
∆VSUP = ±1.25V
V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V
VCM = 0V
-40
40
mV
+25oC
39
-
dB
35
-
dB
oC,
+125
-55oC
1
+25oC
39
-
dB
2, 3
+125oC, -55oC
35
-
dB
1
+25oC
-40
40
µA
+125 C, -55 C
-65
65
µA
+25oC
-
40
µA/V
2, 3
+125oC, -55oC
-
50
µA/V
1
+25oC
25
-
kΩ
2, 3
+125oC, -55oC
20
-
kΩ
1
+25oC
0.980
1.020
V/V
2, 3
+125oC, -55oC
0.975
1.025
V/V
1
+25oC
0.980
1.020
V/V
2, 3
+125oC, -55oC
0.975
1.025
V/V
1
+25oC
1.960
2.040
V/V
2, 3
+125oC, -55oC
1.950
2.050
V/V
VIN = -3.2V
1
+25oC
3
-
V
VIN = -2.7V
2, 3
+125oC, -55oC
2.5
-
V
AV = +1
VIN = -1V to +1V
AV = -1
VIN = -1V to +1V
AV = +2
VIN = -1V to +1V
AV = -1
RL = 50Ω
+125 C, -55 C
1
1
Note 1
AV = -1
RL = 50Ω
o
2, 3
∆VCM = ±2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
AV = -1
RL = 100Ω
o
2, 3
2, 3
∆VSUP = ±1.25V
V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V
AV = -1
RL = 100Ω
LIMITS
GROUP A
SUBGROUPS
o
o
VIN = +3.2V
1
+25oC
-
-3
V
VIN = +2.7V
2, 3
+125oC, -55oC
-
-2.5
V
VIN = -2.7V
1, 2
+25oC, +125oC
2.5
-
V
VIN = -2.25V
3
-55oC
1.5
-
V
VIN = +2.7V
1, 2
VIN = +2.25V
3
+25oC,
+125oC
-55oC
-
-2.5
V
-
-1.5
V
Spec Number
185
511084-883
Specifications HFA1112/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at VSUPPLY = ±5V, RSOURCE = 0Ω, RL = 100Ω, VOUT = 0V, Unless Otherwise Specified.
D.C. PARAMETERS
Output Current
SYMBOL
+IOUT
TEMPERATURE
MIN
MAX
UNITS
1, 2
+25oC, +125oC
50
-
mA
Note 2
Note 2
-IOUT
Quiescent Power
Supply Current
CONDITIONS
RL = 100Ω
ICC
RL = 100Ω
IEE
LIMITS
GROUP A
SUBGROUPS
o
3
-55 C
30
-
mA
1, 2
+25oC, +125oC
-
-50
mA
3
-55oC
-
-30
mA
1
+25oC
14
26
mA
2, 3
+125oC, -55oC
-
33
mA
1
+25oC
-26
-14
mA
2, 3
+125oC, -55oC
-33
-
mA
NOTES:
1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN = 1/CMSIBP .
2. Guaranteed from VOUT Test with RL = 50Ω, by: IOUT = VOUT/50Ω.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at VSUPPLY = ±5V, R L = 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
-3dB Bandwidth
Gain Flatness
Slew Rate
Rise and Fall Time
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
BW(-1)
A V = -1, VOUT = 200mVP-P
1
+25oC
450
-
MHz
BW(+1)
AV = +1, VOUT = 200mV P-P
1
+25oC
500
-
MHz
BW(+2)
AV = +2, VOUT = 200mV P-P
1
+25oC
350
-
MHz
GF30
A V = +2, f ≤ 30MHz
VOUT = 200mVP-P
1
+25oC
-
±0.04
dB
GF50
AV = +2, f ≤ 50MHz
VOUT = 200mVP-P
1
+25oC
-
±0.08
dB
GF100
A V = +2, f ≤ 100MHz
VOUT = 200mVP-P
1
+25oC
-
±0.22
dB
+SR(-1)
A V = -1, VOUT = 5VP-P
1, 2
+25oC
1500
-
V/µs
-SR(-1)
A V = -1, VOUT = 5VP-P
1, 2
+25 C
1800
-
V/µs
+SR(+1)
A V = +1, VOUT = 5VP-P
1, 2
+25oC
900
-
V/µs
o
-SR(+1)
AV = +1, VOUT = 5VP-P
1, 2
+25oC
800
-
V/µs
+SR(+2)
A V = +2, VOUT = 5VP-P
1, 2
+25oC
1200
-
V/µs
-SR(+2)
AV = +2, VOUT = 5VP-P
1, 2
+25oC
1100
-
V/µs
TR(-1)
A V = -1, VOUT = 0.5VP-P
1, 2
+25oC
-
750
ps
TF(-1)
A V = -1, VOUT = 0.5VP-P
1, 2
+25 C
-
800
ps
TR (+1)
A V = +1, VOUT = 0.5VP-P
1, 2
+25oC
-
750
ps
TF(+1)
A V = +1, VOUT = 0.5VP-P
1, 2
+25oC
-
750
ps
TR (+2)
A V = +2, VOUT = 0.5VP-P
1, 2
+25oC
-
1000
ps
TF(+2)
A V = +2, VOUT = 0.5VP-P
1, 2
+25oC
-
1000
ps
o
Spec Number
186
511084-883
Specifications HFA1112/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at VSUPPLY = ±5V, R L = 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Overshoot
Settling Time
2nd Harmonic
Distortion
3rd Harmonic
Distortion
CONDITIONS
+OS(-1)
A V = -1, VOUT = 0.5VP-P
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 3
+25oC
-
30
%
-OS(-1)
A V = -1, VOUT = 0.5VP-P
1, 3
+25 C
-
25
%
+OS(+1)
AV = +1, VOUT = 0.5VP-P
1, 3
+25oC
-
65
%
o
-OS(+1)
AV = +1, VOUT = 0.5VP-P
1, 3
+25oC
-
60
%
+OS(+2)
AV = +2, VOUT = 0.5VP-P
1, 3
+25oC
-
20
%
-OS(+2)
AV = +2, VOUT = 0.5VP-P
1, 3
+25oC
-
20
%
TS(0.1)
AV = +2, to 0.1%
VOUT = 2V to 0V
1
+25oC
-
20
ns
TS(0.05)
A V = +2, to 0.05%
VOUT = 2V to 0V
1
+25oC
-
33
ns
HD2(30)
A V = +2, f = 30MHz
VOUT = 2VP-P
1
+25oC
-
-45
dBc
HD2(50)
A V = +2, f = 50MHz
VOUT = 2VP-P
1
+25oC
-
-40
dBc
HD2(100)
A V = +2, f = 100MHz
VOUT = 2VP-P
1
+25oC
-
-35
dBc
HD3(30)
A V = +2, f = 30MHz
VOUT = 2VP-P
1
+25oC
-
-65
dBc
HD3(50)
A V = +2, f = 50MHz
VOUT = 2VP-P
1
+25oC
-
-55
dBc
HD3(100)
A V = +2, f = 100MHz
VOUT = 2VP-P
1
+25oC
-
-45
dBc
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV = +1. Please refer to
Performance curves.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
187
511084-883
HFA1112/883
Die Characteristics
DIE DIMENSIONS:
63 x 44 x 19 mils ± 1 mils
1600µm x 1130µm x 483µm ± 25.4µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ± 0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ± 0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
WORST CASE CURRENT DENSITY:
2.0 x 105 A/cm2 at 47.5mA
TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1112/883
NC
+IN
V-
NC
-IN
NC
NC
V+
OUT
Spec Number
188
511084-883
HFA1112/883
Test Circuit (Applies to Table 1)
V+
+
10
ICC
0.1
VOS =
0.1
+IBIAS =
-
3
1K
6
0.1
K1
VOUT
DUT
+
100
2
100
4
100K (0.01%)
VZ
100K
K3
+
VZ
VY
510
7
2
2
1
+VIN
+
-
470pF
x100
1
K2
-VIN
0.1
510
NC
VY
100
+
0.1
10
0.1
HA-5177
NOTE:
IEE
1. All Resistors = ±1% (Ω)
2. All Capacitors = ±10% (µF)
3. Unless Otherwise Noted
V-
4. Chip Components Recommended
5. For AV = +1, K1 = Position 1, K2 = Position 1
6. For AV = +2, K1 = Position 1, K2 = Position 2, -VIN = 0V
7. For AV = -1, K1 = Position 1, K2 = Position 2, +VIN = 0V
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE (Applies to Table 3)
AV = +1 or +2 TEST CIRCUIT
AV = -1 TEST CIRCUIT
V+
3
+
2
-
VIN
RS
50Ω
V+
7
VOUT
6
4
2
50Ω
RS
50Ω
50Ω
RG
2
3 +
VIN
7
VOUT
6
4
2
50Ω
50Ω
V-
V-
NOTE:
NOTE:
1. VS = ±5V, RG = 0Ω for AV = +2, RG = ∞ for AV = +1
1. VS = ±5V, AV = -1
2. RF = Internal, RS = 50Ω
2. RF = Internal
3. RL = 100Ω For Small and Large Signals
3. RS = 50Ω, RL = 100Ω For Small and Large Signals
SMALL SIGNAL WAVEFORM
LARGE SIGNAL WAVEFORM
VOUT
VOUT
+2.5V
+2.5V
90%
+SR
-2.5V
+250mV
90%
-SR
10%
10%
90%
90%
TR , +OS
-2.5V
-250mV
TF , -OS
10%
10%
Spec Number
189
+250mV
-250mV
511084-883
HFA1112/883
Burn-In Circuit
HFA1112MJ/883 CERAMIC DIP
8
7
D3
300
2
V+
+
NC
300
-
1
D4
V-
D2
3
6
4
5
C1
D1
R1
C2
NOTE:
1. R1 = 100Ω, ±5% (Per Socket)
2. C1 = C2 = 0.01µF (Per Socket) or 0.1µF (Per Row) Minimum
3. D1 = D2 = 1N4002 or Equivalent (Per Board)
4. D3 = D4 = 1N4002 or Equivalent (Per Socket)
5. V+ = +5.5V ± 0.5V
6. V- = -5.5V ± 0.5V
Spec Number
190
511084-883
HFA1112/883
Packaging
LEAD FINISH
c1
F8.3A
MIL-STD-1835 GDIP1-T8 (D-4, CONFIGURATION A)
8 LEAD DUAL-IN-LINE FRIT-SEAL CERAMIC PACKAGE
-D-
-A-
BASE
METAL
-Bbbb S
C A-B S
MIN
MAX
MIN
MAX
b1
A
-
0.200
-
5.08
-
M
(b)
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
SECTION A-A
D S
D
BASE
PLANE
Q
-C-
SEATING
PLANE
A
α
L
S1
eA
A A
b2
e
b
ccc M
C A-B S
D S
eA/2
MILLIMETERS
SYMBOL
E
M
INCHES
(c)
c
aaa M C A - B S D S
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
NOTES
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
0.405
-
10.29
5
E
0.220
0.310
5.59
7.87
5
e
0.100 BSC
2.54 BSC
-
eA
0.300 BSC
7.62 BSC
-
eA/2
0.150 BSC
3.81 BSC
-
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
6
S1
0.005
-
0.13
-
7
S2
0.005
-
0.13
-
-
α
90o
105o
90o
105o
-
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
0.038
2
N
8
8
8
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b1.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling Dimension: Inch.
11. Lead Finish: Type A.
12. Materials: Compliant to MIL-M-38510.
Spec Number
191
511084-883
HFA1112
TM
Ultra High Speed
Programmable Gain Buffer Amplifier
DESIGN INFORMATION
February 2002
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±5V, RL = 100Ω, TA = +25oC, Unless Otherwise Specified
SMALL SIGNAL PULSE RESPONSE
LARGE SIGNAL PULSE RESPONSE
200
2.0
AV = +2
AV = +2
1.5
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
150
100
50
0
-50
-100
1.0
0.5
0
-0.5
-1.0
-1.5
-150
-2.0
-200
5ns/DIV
5ns/DIV
SMALL SIGNAL PULSE RESPONSE
LARGE SIGNAL PULSE RESPONSE
2.0
200
AV = +1
1.5
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
150
100
50
0
-50
-100
AV = +1
1.0
0.5
0
-0.5
-1.0
-1.5
-150
-2.0
-200
5ns/DIV
5ns/DIV
SMALL SIGNAL PULSE RESPONSE
LARGE SIGNAL PULSE RESPONSE
2.0
200
AV = -1
1.5
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
150
100
50
0
-50
-100
AV = -1
1.0
0.5
0
-0.5
-1.0
-1.5
-150
-2.0
-200
5ns/DIV
5ns/DIV
Spec Number
192
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±5V, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
FREQUENCY RESPONSE
FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS
6
A V = +2, VOUT = 200mVP-P
9
6
AV = +2
-6
0
PHASE
-9
-90
AV = +2
AV = -1
AV = +1
-180
-270
GAIN
3
RL = 50Ω
RL = 100Ω
RL = 1kΩ
0
0
PHASE
-90
RL = 100Ω
-360
1
10
100
0.3
1000
1
FREQUENCY (MHz)
FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS
6
3
RL = 1kΩ
RL = 50Ω
0
PHASE
-90
RL = 100Ω
RL = 1kΩ
10
100
FREQUENCY (MHz)
180
0
RL = 50Ω
RL = 1kΩ
-360
1000
0.3
1
10
100
FREQUENCY (MHz)
-90
-180
1000
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES
6
1VP-P
AV = +1
3
0
GAIN
GAIN
2.5VP-P
PHASE
-90
4.0VP-P
2.5VP-P
1VP-P
1
0
10
100
FREQUENCY (MHz)
-180
-3
GAIN (dB)
4.0VP-P
0
PHASE (DEGREES)
GAIN (dB)
RL = 100Ω
-270
3
0.3
-9
90
9
6
RL = 50Ω
-6
PHASE
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES
AV = +2
RL = 100Ω
-180
RL = 50Ω
1
GAIN
-3
GAIN (dB)
RL = 100Ω
PHASE (DEGREES)
GAIN (dB)
GAIN
-9
12
RL = 1kΩ
0
-6
0.3
-360
1000
AV = -1, VOUT = 200mVP-P
3
0
-3
100
FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS
6
AV = +1, VOUT = 200mVP-P
10
FREQUENCY (MHz)
-270
PHASE (DEGREES)
0.3
-180
RL = 50Ω
RL = 1kΩ
VOUT = 4VP-P
VOUT = 2.5VP-P
-6
VOUT = 1VP-P
0
PHASE
-90
VOUT = 4VP-P
-270
VOUT = 2.5VP-P
VOUT = 1VP-P
-360
0.3
1000
1
10
100
FREQUENCY (MHz)
Spec Number
193
-180
PHASE (DEGREES)
-3
AV = -1
GAIN (dB)
GAIN
PHASE (DEGREES)
0
PHASE (DEGREES)
GAIN (dB) NORMALIZED
AV = +1
VOUT = 200mVp-p
3
-270
-360
1000
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±5V, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES
6
AV = -1
FULL POWER BANDWIDTH
15
VOUT = 2.5VP-P
VOUT = 4VP-P
3
GAIN
0
PHASE
180
90
VOUT = 4VP-P
0
VOUT = 2.5VP-P
PHASE (DEGREES)
-6
GAIN (dB) NORMALIZED
9
VOUT = 1VP-P
-3
-90
1
10
100
FREQUENCY (MHz)
3
0
-3
AV = -1
AV = +2
-6
AV = +1
-12
-180
0.3
6
-9
VOUT = 1VP-P
-15
0.3
1000
1
10
FREQUENCY (MHz)
-3dB BANDWIDTH vs TEMPERATURE
1000
0.35
A V = +1
800
0.30
GAIN (dB) NORMALIZED
850
BANDWIDTH (MHz)
100
GAIN FLATNESS
900
AV = -1
750
700
650
600
AV = +2
0.25
0.20
AV = -1
AV = +1
0.15
0.10
0.05
0
-0.05
550
AV = +2
-0.10
500
-0.15
-50
-25
0
25
50
75
100
125
1
10
TEMPERATURE (oC)
100
FREQUENCY (MHz)
DEVIATION FROM LINEAR PHASE
SETTLING RESPONSE
4
AV = +2, VOUT = 2V
3
0.6
2
1
SETTLING ERROR (%)
DEVIATION (DEGREES)
GAIN (dB)
VOUT = 5VP-P
12
AV = -1
0
-1
AV = +2
-2
AV = +1
-3
-4
0.4
0.2
0.1
0
-0.1
-0.2
-0.4
-0.6
-5
-6
0
15
30
45
60
75
90
105
120
-2
135 150
3
8
13
18
23
28
33
38
43
48
TIME (ns)
FREQUENCY (MHz)
Spec Number
194
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±5V, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
LOW FREQUENCY REVERSE ISOLATION (S12)
HIGH FREQUENCY REVERSE ISOLATION (S12)
-24
235
-30
180
PHASE
AV = +1
AV = +1
-42
GAIN (dB)
GAIN (dB)
-48
-54
AV = +2
-60
AV = -1
AV = -1
-66
45
AV = +2
-24
-30
AV = +2
AV = -1
-54
-84
20
0
40
60
80
100
120 140
160
180
-60
100 190
200
280 370
FREQUENCY (MHz)
1dB GAIN COMPRESSION vs FREQUENCY
460 550 640 730
FREQUENCY (MHz)
820
910 1000
3rd ORDER INTERMODULATION INTERCEPT vs FREQUENCY
30
20
2 - TONE
18
INTERCEPT POINT (dBm)
OUTPUT POWER AT 1dB COMPRESSION (dBm)
AV = +1
-36
-48
-78
16
AV = -1
14
AV = +2
12
10
AV = +1
8
6
AV = -1
20
AV = +2
AV = +1
10
4
2
0
100
200
300
FREQUENCY (MHz)
400
0
100
500
-20
AV = +2
-30
-40
-40
DISTORTION (dBc)
-30
-50
-60
100MHz
30MHz
50MHz
200
300
FREQUENCY (MHz)
400
3rd HARMONIC DISTORTION vs POUT
2nd HARMONIC DISTORTION vs POUT
-20
DISTORTION (dBc)
0
GAIN
-42
AV = +2
-72
90
AV = -1
PHASE (DEGREES)
-36
-70
AV = +2
-50
-60
-70
-80
-80
-90
-90
30MHz
50MHz
100MHz
-100
-100
-6
-3
0
3
6
9
12
-6
15
-3
0
3
6
9
12
15
18
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
Spec Number
195
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±5V, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
2nd HARMONIC DISTORTION vs POUT
3rd HARMONIC DISTORTION vs POUT
-20
-20
AV = +1
-30
-40
-40
DISTORTION (dBc)
DISTORTION (dBc)
AV = +1
-30
-50
-60
-70
100MHz
50MHz
30MHz
-50
-60
-70
100MHz
-80
-80
-90
-90
-100
-6
-3
0
3
6
9
OUTPUT POWER (dBm)
12
-100
-6
15
2nd HARMONIC DISTORTION vs POUT
-3
0
3
6
9
OUTPUT POWER (dBm)
12
15
12
15
3rd HARMONIC DISTORTION vs POUT
-20
-20
A V = -1
AV = -1
-30
-30
-40
-40
DISTORTION (dBc)
DISTORTION (dBc)
30MHz
50MHz
-50
-60
100MHz
-70
50MHz
30MHz
-50
-60
-70
-80
-80
-90
-90
30MHz
50MHz
100MHz
-100
-100
-6
-3
0
3
6
9
12
-6
15
-3
0
OUTPUT POWER (dBm)
3
6
9
OUTPUT POWER (dBm)
INTEGRAL LINEARITY ERROR
OVERSHOOT vs INPUT RISE TIME
+0.04
60
VOUT = 0.5V
OVERSHOOT (%)
PERCENT ERROR (%)
50
+0.02
0
AV = +1
40
30
20
-0.02
AV = -1
10
AV = +2
0
100
-0.04
-3.0
-2.0
-1.0
0
+1.0
INPUT VOLTAGE (V)
+2.0
+3.0
300
500
700
900
1100
1300
INPUT RISE TIME (ps)
Spec Number
196
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
Typical Performance Curves
VSUPPLY = ±5V, RL = 100Ω, TA = +25oC, Unless Otherwise Specified (Continued)
OVERSHOOT vs INPUT RISE TIME
OVERSHOOT vs INPUT RISE TIME
60
60
VOUT = 1V
VOUT = 2V
50
40
OVERSHOOT (%)
OVERSHOOT (%)
50
AV = +1
30
20
AV = +1
30
20
AV = +2
AV = -1
10
40
10
AV = -1
AV = +2
0
100
300
500
700
900
1100
0
100
1300
300
INPUT RISE TIME (ps)
700
900
1100
1300
INPUT RISE TIME (ps)
SUPPLY CURRENT vs SUPPLY VOLTAGE
SUPPLY CURRENT vs TEMPERATURE
25
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
24
23
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
500
22
21
20
19
18
17
16
15
5
6
7
8
9
-50
10
-25
0
25
50
75
100
125
TEMPERATURE (oC)
TOTAL SUPPLY VOLTAGE (V+ - V-, V)
OUTPUT VOLTAGE vs TEMPERATURE
INPUT NOISE CHARACTERISTICS
3.6
50
130
40
110
30
90
20
70
AV = -1
OUTPUT VOLTAGE (V)
+VOUT (R L = 100Ω)
3.3
3.2
NOISE VOLTAGE (nV/√Hz)
+VOUT (RL = 50Ω)
3.4
|-VOUT| (RL = 100Ω)
3.1
3.0
2.9
2.8
|-VOUT| (RL = 50Ω)
eni
50
10
NOISE CURRENT (pA/√Hz)
3.5
ini
2.7
0
2.6
-50
-25
0
25
50
75
TEMPERATURE (oC)
100
0.1
125
1
10
FREQUENCY (kHz)
Spec Number
197
30
100
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
Application Information
Driving Capacitive Loads
Closed Loop Gain Selection
Capacitive loads, such as an A/D input, or an improperly
terminated transmission line will degrade the amplifier’s
phase margin resulting in frequency response peaking and
possible oscillations. In most cases, the oscillation can be
avoided by placing a resistor (RS) in series with the output
prior to the capacitance.
The HFA1112 features a novel design which allows the user
to select from three closed loop gains, without any external
components. The result is a more flexible product, fewer part
types in inventory, and more efficient use of board space.
This “buffer” operates in closed loop gains of -1, +1, or +2,
and gain selection is accomplished via connections to the
±inputs. Applying the input signal to +IN and floating -IN
selects a gain of +1, while grounding -IN selects a gain of +2.
A gain of -1 is obtained by applying the input signal to -IN
with +IN grounded.
The table below summarizes these connections:
RS and C L form a low pass network at the output, thus
limiting system bandwidth well below the amplifier bandwidth
of 850MHz. By decreasing RS as CL increases (as illustrated
in the curves), the maximum bandwidth is obtained without
sacrificing stability. Even so, bandwidth does decrease as
you move to the right along the curve. For example, at
AV = +1, RS = 50Ω, C L = 30pF, the overall bandwidth is limited to 300MHz, and bandwidth drops to 100MHz at AV = +1,
RS = 5Ω, CL = 340pF.
CONNECTIONS
GAIN
(ACL )
+INPUT (PIN 3)
-INPUT (PIN 2)
-1
GND
Input
+1
Input
NC (Floating)
+2
Input
GND
Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and CL combinations for the optimum bandwidth, stability, and settling time,
but experimental fine tuning is recommended. Picking a
point above or to the right of the curve yields an overdamped
response, while points below or left of the curve indicate
areas of underdamped performance.
The frequency response of this amplifier depends greatly on
the amount of care taken in designing the PC board. The
use of low inductance components such as chip resistors and chip capacitors is strongly recommended,
while a solid ground plane is a must!
Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
(0.1µF) chip capacitor works well in most cases.
Terminated microstrip signal lines are recommended at the
input and output of the device. Capacitance directly on the
output must be minimized, or isolated as discussed in the
next section.
RS (Ω)
PC Board Layout
50
45
40
35
30
25
20
15
10
5
0
AV = +1
AV = +2
0
40
80
120
160
200
240
280 320
360 400
LOAD CAPACITANCE (pF)
FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs
LOAD CAPACITANCE
For unity gain applications, care must also be taken to
minimize the capacitance to ground seen by the amplifier’s
inverting input. At higher frequencies this capacitance will
tend to short the -INPUT to GND, resulting in a closed loop
gain which increases with frequency. This will cause
excessive high frequency peaking and potentially other
problems as well.
An example of a good high frequency layout is the Evaluation Board shown in Figure 2.
Spec Number
198
511084-883
HFA1112
Evaluation Board
BOTTOM LAYOUT
TOP LAYOUT
The performance of the HFA1112 may be evaluated using
the HFA11XX Evaluation Board, slightly modified as follows:
VH
1. Remove the 500Ω feedback resistor (R2), and leave the
connection open.
1
2. a. For AV = +1 evaluation, remove the 500Ω gain setting
resistor (R1), and leave pin 2 floating.
b. For AV = +2, replace the 500Ω gain setting resistor with
a 0Ω resistor to GND.
+IN
OUT V+
VL VGND
The layout and modified schematic of the board are shown
in Figure 2.
∞ (AV = +1)
or 0Ω (AV = +2)
To order evaluation boards, please contact your local sales
office.
R1
1
8
50Ω
2
7
IN
10µF
VH
0.1µF
10µF
+5V
50Ω
3
6
4
5
OUT
GND
0.1µF
-5V
VL
GND
FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number
199
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±5V, AV = +1V/V, RL = 100Ω, Unless Otherwise Specified
PARAMETERS
CONDITIONS
Output Offset Voltage
VCM = 0V
Average Offset Voltage Drift
Versus Temperature
+Input Current
VCM = 0V
+Input Resistance
∆VCM = 2V
+Input Noise Voltage
+Input Noise Current
TEMPERATURE
TYPICAL
UNITS
+25 C
8
mV
Full
10
µV/oC
+25oC
o
25
µA
o
50
kΩ
o
9
nV/√Hz
o
+25 C
37
pA/√Hz
Full
±2.8
V
o
+25 C
+25 C
f = 100kHz
f = 100kHz
Input Common Mode Range
Gain
AV = +1, VIN = 2V
+25 C
0.99
V/V
Gain
AV = +2, VIN = 1V
+25oC
1.98
V/V
DC Non-Linearity
AV = +2, ±2V Full Scale
0.02
%
±60
mA
Output Current
AV = -1, RL = 50Ω
AV = +2
Quiescent Supply Current
RL = Open
-3dB Bandwidth
AV = -1, VOUT = 200mV P-P
24
mA
o
800
MHz
o
850
MHz
o
550
MHz
o
+25 C
+25 C
+25 C
2400
V/µs
1500
V/µs
AV = +2, VOUT = 5VP-P
+25oC
AV = -1, VOUT = 5VP-P
1900
V/µs
o
300
MHz
o
150
MHz
o
220
MHz
o
±0.02
dB
o
±0.10
dB
o
±0.015
dB
o
±0.05
dB
+25 C
To 30MHz, AV = -1
+25 C
+25 C
+25 C
+25 C
+25 C
To 50MHz, AV = -1
+25 C
To 50MHz, AV = +1
+25 C
±0.20
dB
To 50MHz, AV = +2
+25oC
±0.036
dB
To 100MHz, AV = -1
+25oC
o
To 100MHz, AV = +2
±0.10
dB
o
±0.07
dB
o
±0.13
Degrees
o
±0.83
Degrees
o
±0.05
Degrees
o
-52
dBc
o
-57
dBc
o
-52
dBc
+25 C
To 100MHz, AV = -1
+25 C
To 100MHz, AV = +1
+25 C
To 100MHz, AV = +2
2nd Harmonic Distortion
Full
+25oC
To 30MHz, AV = +2
Linear Phase Deviation
Ω
+25 C
To 30MHz, AV = +1
Gain Flatness
0.3
AV = +1, VOUT = 5VP-P
AV = +2, VOUT = 5VP-P
Gain Flatness
+25 C
AV = -1, VOUT = 5VP-P
AV = +1, VOUT = 5VP-P
Gain Flatness
mA
o
-55 C to 0 C
AV = +2, VOUT = 200mVP-P
Full Power Bandwidth
±50
o
o
AV = +1, VOUT = 200mVP-P
Slew Rate
o
+25 C to +125 C
AV = -1, RL = 50Ω
DC Closed Loop Output Resistance
+25oC
o
+25 C
30MHz, AV = -1, VOUT = 2VP-P
30MHz, AV = +1, VOUT = 2VP-P
30MHz, AV = +2, VOUT = 2VP-P
+25 C
+25 C
+25 C
Spec Number
200
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±5V, AV = +1V/V, RL = 100Ω, Unless Otherwise Specified
PARAMETERS
3rd Harmonic Distortion
2nd Harmonic Distortion
CONDITIONS
30MHz, AV = -1, VOUT = 2VP-P
-73
dBc
-72
dBc
o
-47
dBc
o
-53
dBc
o
-47
dBc
o
-63
dBc
o
-68
dBc
o
-65
dBc
o
-41
dBc
o
-50
dBc
o
50MHz, AV = -1, VOUT = 2VP-P
50MHz, AV = -1, VOUT = 2VP-P
100MHz, AV = -1, VOUT = 2VP-P
100MHz, AV = +1, VOUT = 2VP-P
+25 C
+25 C
+25 C
+25 C
-42
dBc
-55
dBc
o
-49
dBc
o
-62
dBc
o
28
dBm
o
13
dBm
o
19
dBm
o
12
dBm
o
-70
dB
o
-60
dB
100MHz, AV = +2
+25 C
+25 C
+25 C
+25 C
100MHz, AV = +2
+25 C
+25 C
40MHz
+25 C
+25 C
100MHz
o
600MHz
+25 C
-32
dB
AV = -1, VOUT = 0.5VP-P
+25oC
500
ps
o
480
ps
o
700
ps
o
12
%
o
45
%
o
6
%
o
13
ns
o
20
ns
o
36
ns
AV = +1, VOUT = 0.5VP-P
AV = +2, VOUT = 0.5VP-P
AV = -1, VOUT = 0.5VP-P
AV = +1, VOUT = 0.5VP-P
AV = +2, VOUT = 0.5VP-P
Settling Time
+25 C
+25oC
300MHz, AV = +2
Overshoot
+25 C
+25 C
300MHz, AV = +2
Rise & Fall Time
+25 C
100MHz, AV = +2, VOUT = 2VP-P
100MHz, AV = +2, VOUT = 2VP-P
Reverse Isolation (S12)
+25 C
100MHz, AV = -1, VOUT = 2VP-P
100MHz, AV = +1, VOUT = 2VP-P
1dB Compression
dBc
+25oC
50MHz, AV = +2, VOUT = 2VP-P
3rd Order Intercept
-71
o
+25 C
+25 C
50MHz, AV = +1, VOUT = 2VP-P
3rd Harmonic Distortion
UNITS
30MHz, AV = +2, VOUT = 2VP-P
50MHz, AV = +2, VOUT = 2VP-P
2nd Harmonic Distortion
TYPICAL
o
30MHz, AV = +1, VOUT = 2VP-P
50MHz, AV = +1, VOUT = 2VP-P
3rd Harmonic Distortion
TEMPERATURE
AV = +2, to 0.1%, VOUT = 2V to 0V
AV = +2, to 0.05%, VOUT = 2V to 0V
AV = +2, to 0.02%, VOUT = 2V to 0V
+25 C
+25 C
+25 C
+25 C
+25 C
+25 C
+25 C
+25 C
o
Overdrive Recovery Time
AV = +2, VIN = 5VP-P
+25 C
8.5
ns
Differential Gain
AV = +2, RL = 150Ω, NTSC
+25oC
0.02
%
0.04
Degrees
Differential Phase
AV = +2, RL = 150Ω, NTSC
o
+25 C
Spec Number
201
511084-883