F12N65S WF WFF12N65S 650V Super-Junction Power MOSFET Features � Ultra low R dson � Ultra low gate charge (typ. Q g = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Absolute Maximum Ratings Symbol VDSS ID Parameter Drain Source Voltage Continuous Drain Current(@Tc=25℃) 1) I DM Drain Current Pulsed VGS Gate to Source Voltage EAS I AR EAR PD Value Units 650 V 12 A 30 A ±30 V Single Pulse Avalanche Energy 2) 350 mJ Single Pulse Avalanche Current 1) 12 A 12.5 mJ 33 W Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) -Derate above 25℃ 0.26 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ Is Continuous diode forward current 12 A Diode pulse current 30 A Is,pulse Notes: 1.Repetitive Rating:Pulse width limited by maximum Junction Temperature 2.I AS=3.5,VDD=60V,R G=25Ω,Starting T J=25℃ Thermal Characteristics Symbol Parameter Min Value Typ Max Units R θJC Thermal Resistance , Junction -to -Case - - 3.8 ℃/W RθJA Thermal Resistance , Junction -to -Ambient - - 80 ℃/W WT-F042-Rev.A1 Nov.2013 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. F12 N65S WF WFF12 F12N Electrical Characteristics(Tc=25℃ unless otherwise noted) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current I GSS VGS =±30V,VDS =0V - - ±100 nA Drain cut -off current I DSS VDS =650,VGS =0V - - 1 µA V(BR)DSS I D=250µA,VGS =0V 650 - - V VGS(th) VDS =VGS,I D=250uA 2.5 - 4.5 V Tj=25℃ - 0.315 0.35 Ω Tj=125℃ - 0.69 - Drain -source breakdownvoltage Gate threshold voltage VGS =10V,ID=6A Drain -source ON resistance R DS(ON) Gate resistance RG f=1MHz,open drain - 0.9 Input capacitance C iss VDS =25V, - 1040 Reverse transfer capacitance C rss VGS =0V, - 10 Output capacitance C oss f=1MHz - 780 - 16 - VDD = 380V, I D = 6A R G - 14 - = 4.7Ω, VGS =10V - 40 - tf - 5 - Gate to source charge Qgs - 6 - Gate to drain charge Q gd VDD=480 - 13 - Gate charge total Qg VG S=0 to 10 V - 28 - - 5.5 - Min Type Max Unit VGS=0 V, I F=6A - - 1.4 V Turn-on delay time td(on) tr Rise time Turn-off delay time td(off) Fall time Gate plateau voltage V, I D=6A, V plateau Ω pF ns nC Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Diode forward voltage VSD Reverse recovery time trr VR=50 V, I F=12A, - 439 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 3.6 - µc Peak reverse recovery current I rrm - 15 - A 2/6 Steady, keep you advance F12 N65S WF WFF12 F12N Fig.1 On-Region Characteristics Fig.3 On-Resistance Variation vs. Fig.2 Transfer Characteristics Fig.4 Threshold Voltage vs.Temperature Drain Current Fig.5 Breakdown Voltage vs. Fig.6 On-Resistance vs. Temperature Temperature 3/6 Steady, keep you advance F12 N65S WF WFF12 F12N ID =6A Fig.7 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.8 Gate Charge Characteristics Fig.10 Power Dissipation vs. Temperature Fig.11 Transient Thermal Response Curve 4/6 Steady, keep you advance F12 N65S WF WFF12 F12N Fig.12 Gate Charge Test Circuit & Waveform Fig.13 Switching Test Circuit & Waveforms Fig.14 Unclamped Inductive Switching Test Circuit & Waveform 5/6 Steady, keep you advance F12 N65S WF WFF12 F12N F Package Dimension TO-220 TO-220F Unit:mm 6/6 Steady, keep you advance