UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION 1 The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. The complementary NPN types are the BD135/BD137/ BD139. 1 TO-251 SOT-223 1 1 TO-126 TO-126C ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free BD136L-xx-T60-K BD136G-xx-T60-K TO-126 BD136L-xx-TM3-T BD136G-xx-TM3-T TO-251 BD138G-xx-AA3-R SOT-223 BD138L-xx-T60-K BD138G-xx-T60-K TO-126 BD138L-xx-TM3-T BD138G-xx-TM3-T TO-251 BD140G-xx-AA3-R SOT-223 BD140L-xx-T60-K BD140G-xx-T60-K TO-126 BD140L-xx-T6C-K BD140G-xx-T6C-K TO-126C BD140L-xx-TM3-T BD140G-xx-TM3-T TO-251 Note: Pin Assignment: E: Emitter C: Collector B: Base www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1 E B B E B B E E B Pin Assignment 2 3 C B C E C E C B C E C E C B C B C E Packing Bulk Tube Tape Reel Bulk Tube Tape Reel Bulk Bulk Tube 1 of 4 QW-R204-013.E BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR MARKING PACKAGE SOT-223 BD136 MARKING BD138 BD140 - TO-251 TO-126 TO-126C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-013.E BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT -45 Collector-Base Voltage VCBO V -60 -80 -45 Collector-Emitter Voltage VCEO V -60 -80 Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Peak Current ICM -3 A Base Current IB -0.5 A SOT-223 8 Power Dissipation TC≦25°C TO-126/TO-126C PD W 12.5 TO-251 15 Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range and assured by design from –20°C ~85°C. BD136 BD138 BD140 BD136 BD138 BD140 THERMAL DATA PARAMETER SYMBOL SOT-223 TO-126/TO-126C TO-251 SOT-223 Junction to Case TO-126/TO-126C TO-251 Note: Transistor mounted on an FR4 printed circuit board. Junction to Ambient RATINGS 155 100 83 15.5 10 8.3 θJA θJC °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER Collector-Emitter Sustaining Voltage SYMBOL BD136 BD138 BD140 VCEO(SUS) Collector Cut-off Current ICBO Emitter Cut- off Current IEBO hFE1 hFE2 hFE3 DC Current Gain TEST CONDITIONS IC =-30mA, IB=0 (Note) VCB =-30 V, IE=0 VCB =-30 V, IE=0, TC = 125C VEB = -5 V, IC=0 VCE=-2V, IC =-5mA, VCE=-2V, IC =-0.5A VCE=-2V, IC =-150mA Collector-Emitter Saturation VCE(SAT) IC =-0.5A, IB = -0.05A (Note) Voltage Base-Emitter Voltage VBE IC =-0.5A, VCE =-2V (Note) Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 % UNIT MIN -45 -60 -80 25 25 40 TYP MAX UNIT V V V -0.1 μA -10 -10 μA 250 -0.5 V -1 V CLASSIFICATION OF hFE3 RANK RANGE 6 40~100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 63~160 16 100~250 3 of 4 QW-R204-013.E BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-013.E