Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BD136-138-140
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR

DESCRIPTION
1
The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP
transistor, designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
The complementary NPN types are the BD135/BD137/ BD139.
1
TO-251
SOT-223
1
1
TO-126

TO-126C
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
BD136L-xx-T60-K
BD136G-xx-T60-K
TO-126
BD136L-xx-TM3-T
BD136G-xx-TM3-T
TO-251
BD138G-xx-AA3-R
SOT-223
BD138L-xx-T60-K
BD138G-xx-T60-K
TO-126
BD138L-xx-TM3-T
BD138G-xx-TM3-T
TO-251
BD140G-xx-AA3-R
SOT-223
BD140L-xx-T60-K
BD140G-xx-T60-K
TO-126
BD140L-xx-T6C-K
BD140G-xx-T6C-K
TO-126C
BD140L-xx-TM3-T
BD140G-xx-TM3-T
TO-251
Note: Pin Assignment: E: Emitter
C: Collector
B: Base
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Copyright © 2014 Unisonic Technologies Co., LTD
1
E
B
B
E
B
B
E
E
B
Pin Assignment
2
3
C
B
C
E
C
E
C
B
C
E
C
E
C
B
C
B
C
E
Packing
Bulk
Tube
Tape Reel
Bulk
Tube
Tape Reel
Bulk
Bulk
Tube
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BD136-138-140
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PNP EPITAXIAL SILICON TRANSISTOR
MARKING
PACKAGE
SOT-223
BD136
MARKING
BD138
BD140
-
TO-251
TO-126
TO-126C
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BD136-138-140

PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
-45
Collector-Base Voltage
VCBO
V
-60
-80
-45
Collector-Emitter Voltage
VCEO
V
-60
-80
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1.5
A
Collector Peak Current
ICM
-3
A
Base Current
IB
-0.5
A
SOT-223
8
Power Dissipation
TC≦25°C TO-126/TO-126C
PD
W
12.5
TO-251
15
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.
BD136
BD138
BD140
BD136
BD138
BD140

THERMAL DATA
PARAMETER
SYMBOL
SOT-223
TO-126/TO-126C
TO-251
SOT-223
Junction to Case
TO-126/TO-126C
TO-251
Note: Transistor mounted on an FR4 printed circuit board.
Junction to Ambient

RATINGS
155
100
83
15.5
10
8.3
θJA
θJC
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter
Sustaining Voltage
SYMBOL
BD136
BD138
BD140
VCEO(SUS)
Collector Cut-off Current
ICBO
Emitter Cut- off Current
IEBO
hFE1
hFE2
hFE3
DC Current Gain
TEST CONDITIONS
IC =-30mA, IB=0 (Note)
VCB =-30 V, IE=0
VCB =-30 V, IE=0, TC = 125C
VEB = -5 V, IC=0
VCE=-2V, IC =-5mA,
VCE=-2V, IC =-0.5A
VCE=-2V, IC =-150mA
Collector-Emitter Saturation
VCE(SAT)
IC =-0.5A, IB = -0.05A (Note)
Voltage
Base-Emitter Voltage
VBE
IC =-0.5A, VCE =-2V (Note)
Note: Pulsed: Pulse duration ≦ 300μs, duty cycle 1.5 %

UNIT
MIN
-45
-60
-80
25
25
40
TYP MAX UNIT
V
V
V
-0.1
μA
-10
-10
μA
250
-0.5
V
-1
V
CLASSIFICATION OF hFE3
RANK
RANGE
6
40~100
UNISONIC TECHNOLOGIES CO., LTD
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10
63~160
16
100~250
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PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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