BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • High DC Current Gain • BD 136, 138, 140 are complementary with BD 135, 137, 139 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 1.5 A POWER TRANSISTORS PNP SILICON 45, 60, 80 V, 12.5 W COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD136G BD138G BD140G VCEO Collector−Base Voltage BD136G BD138G BD140G VCBO Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.25 10 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 100 Watts mW/°C – 55 to + 150 °C Operating and Storage Junction Temperature Range Vdc 3 BASE 45 60 80 1 EMITTER Vdc 45 60 100 TJ, Tstg TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM YWW BD1xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y WW BD1xx THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 10 °C/W Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W G = Year = Work Week = Device Code xx = 36, 38, 40 = Pb−Free Package ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 16 1 Package Shipping BD136G TO−225 (Pb−Free) 500 Units/Box BD138G TO−225 (Pb−Free) 500 Units/Box BD140G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: BD136/D BD136G, BD138G, BD140G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.03 Adc, IB = 0) BD136G BD138G BD140G BVCEO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125 _C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A, VCE = 2 V) hFE* Collector−Emitter Saturation Voltage (Note 1) (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat)* Base−Emitter On Voltage (Note 1) (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on)* Min Max Unit Vdc 45 60 80 − − − − − 0.1 10 − 10 25 40 25 − 250 − − 0.5 − 1 mAdc mAdc − Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 0.5 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 2 V 150°C 25°C −55°C 100 10 IC/IB = 10 −55°C 0.4 0.3 25°C 150°C 0.2 0.1 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2 BD136G, BD138G, BD140G 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 10 VBE(on), BASE−EMITTER ON VOLTAGE (V) TYPICAL CHARACTERISTICS VCE = 2 V 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage 10 1000 IC, COLLECTOR CURRENT (A) f = 1 MHz Cib 100 Cob 10 0.1 ms 5 ms 0.5 ms 1 TJ = 125°C dc 0.1 BD136 BD138 BD140 0.01 1 0.1 1 10 1 100 10 VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Capacitance Figure 6. Active−Region Safe Operating Area 1.50 PD, POWER DISSIPATION (W) C, CAPACITANCE (pF) 1.2 1.25 1.00 0.75 0.50 0.25 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Derating http://onsemi.com 3 140 160 80 BD136G, BD138G, BD140G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. 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