Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1012
PNP SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION

FEATURES
*Low Collector Saturation Voltage
VCE(SAT)=-0.4V(max.) At Ic=-3A
*High Speed Switching Time: tS=1.0s(Typ.)
*Complementary To 2SC2562

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SA1012L-x-TA3-T
2SA1012G-x-TA3-T
TO-220
2SA1012L-x-TF3-T
2SA1012G-x-TF3-T
TO-220F
2SA1012L-x-TM3-T
2SA1012G-x-TM3-T
TO-251
2SA1012L-x-TN3-R
2SA1012G-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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2SA1012

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Collector-Emitter Voltage
VEBO
-5
V
Peak Collector Current
IC
-5
A
Power Dissipation
PD
25
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector output capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE (SAT)
VBE (SAT)
fT
Cob
TEST CONDITIONS
IC=-100μA, IE=0
IC=-10mA, IB=0
IE=-100μA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-1A
VCE=-1V, IC=-3A
IC=-3A, IB=-0.15A
IC=-3A, IB=-0.15A
VCE=-4V, IC=-1A
VCB=-10V, IE=0, f=1MHz
MIN
-60
-50
-5
TYP
MAX
-1.0
-1.0
360
70
30
-0.2
-0.9
60
170
-0.4
-1.2
UNIT
V
V
V
μA
μA
V
V
MHz
pF
Turn-on time
tON
0.1
μs
Switching time Storage time
tS
1.0
μs
tF
0.1
μs
Fall time

CLASSIFICATION of hFE1
RANK
RANGE
O
70 ~ 140
Y
120 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
180 ~ 360
R1
>255
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2SA1012
PNP SILICON TRANSISTOR
■ TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1012

PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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