SKM400GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 612 A Tc = 80 °C 467 A 400 A ICnom ICRM SEMITRANS® 3 VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V 1200 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 440 A Tc = 80 °C 329 A 400 A Tj = 125 °C Inverse diode SKM400GB12V IF Tj = 175 °C IFnom Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1980 A -40 ... 175 °C Tj Module It(RMS) Visol • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° AC sinus 50Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Remarks Tterminal = 80 °C Tstg rCE Conditions IC = 400 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.75 2.20 V Tj = 150 °C 2.20 2.50 V Tj = 25 °C 0.94 1.04 V Tj = 150 °C 0.88 0.98 V Tj = 25 °C 2.02 2.9 m 3.30 3.80 m 6 6.5 V 0.1 0.3 mA Tj = 150 °C VGE(th) VGE=VCE, IC = 16 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) VCE = 25 V VGE = 0 V Tj = 25 °C Tj = 150 °C mA f = 1 MHz 24.04 nF f = 1 MHz 2.36 nF f = 1 MHz 2.356 nF 4420 nC VGE = - 8 V...+ 15 V VCC = 600 V IC = 400 A VGE = ±15 V RG on = 3 RG off = 3 di/dton = 9800 A/µs di/dtoff = 5000 A/µs du/dtoff = 7600 V/ µs per IGBT 5.5 1.9 Tj = 150 °C 350 ns Tj = 150 °C 60 ns Tj = 150 °C 39 mJ Tj = 150 °C 700 ns Tj = 150 °C 65 ns Tj = 150 °C 42 mJ 0.072 K/W GB © by SEMIKRON Rev. 3 – 23.03.2011 1 SKM400GB12V Characteristics Symbol Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chip VF0 rF SEMITRANS® 3 IRRM Qrr Err Rth(j-c) SKM400GB12V • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt typ. max. Unit Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 2.3 2.5 m 3.1 3.4 m Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 9500 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 450 A 58 µC 26 mJ 0.14 K/W Module LCE RCC'+EE' Features min. 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 20 nH TC = 25 °C 0.25 m TC = 125 °C 0.5 m 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GB 2 Rev. 3 – 23.03.2011 © by SEMIKRON SKM400GB12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 23.03.2011 3 SKM400GB12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 23.03.2011 © by SEMIKRON SKM400GB12V SEMITRANS 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 23.03.2011 5