UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain ORDERING INFORMATION Ordering Number Note: 2SD1782G-x-AE3-R Pin Assignment: B: Base C: Collector Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel E: Emitter MARKING D17G www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-107.b 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob TEST CONDITIONS IC=50µA IC=2mA IE=50µA VCB=50V VEB=4V IC=500 mA, IB=50mA VCE=3V, IC=100mA VCE=10V, IE=-50mA, f=100MHz VCB=10V, IE=0A, f=1MHz MIN 80 80 5 120 TYP MAX UNIT V V V 0.5 µA 0.5 µA 0.2 0.5 V 390 120 MHz 7.5 pF CLASSIFICATION OF hFE RANK RANGE Q 120~270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 180~390 2 of 3 QW-R206-107.b 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-107.b