Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SD879
NPN EPITAXIAL SILICON TRANSISTOR
1.5V, 3V STROBE
APPLICATIONS

DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor, designed
for 1.5V and 3V strobe applications.

FEATURES
* In applications where two NiCd batteries are used to provide 2.4V,
two 2SD879s are used.
* The charge time is approximately 1 second faster than that of
germanium transistors.
* Less power dissipation because of lWO Collector-to-Emitter
Voltage VCE(SAT), permitting more flashes of light to be emitted.
* Large current capacity and highly resistant to break-down.
* Excellent linearity of hFE in the region from low current to high
current.

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD879G-AB3-R
2SD879L-T92-B
2SD879G-T92-B
2SD879L-T92-K
2SD879G-T92-K
Note: Pin Assignment: E: Emitter
C: Collector

Package
SOT-89
TO-92
TO-92
B: Base
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
TO-92
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2SD879

NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEX
20
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation
PD
1
W
Collector Current (DC)
IC
3
A
Collector Current (PULSE)
ICP
5
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Pulse Condition -> 100 ms single pulse
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base-Emitter Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Pulse: 1mS
SYMBOL
VCBO
VCEX
VCEO
VEBO
VBE(ON)
ICBO
IEBO
hFE
VCE(SAT)
fT
COB
TEST CONDITIONS
IC=10uA, IE=0
IC=1mA, VBE=3V
IC=1mA, RBE=
IE=10uA, IC=0
VCE=1V, IC=2A
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=3A (pulse)
IC=3A, IB=60mA (pulse)
VCE=10V, IC=50mA
VCB=10V, f=1MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
30
20
10
6
140
TYP
MAX
0.83
1.5
1
1
400
0.4
210
0.3
200
30
UNIT
V
V
V
V
V
A
A
V
MHz
pF
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2SD879
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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