DC COMPONENTS CO., LTD. R 2SD879 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1.5V and 3V electronic flash. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Collector-Base Voltage Rating Unit VCBO 30 V VCEX 20 V VCEO 10 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 3 A Collector-Emitter Voltage IC 5 A PD 750 mW +150 -55 to +150 o TJ Storage Temperature TSTG .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 Total Power Dissipation Junction Temperature .022(0.56) .014(0.36) .050 Typ (1.27) Collector Current (pulse) o .500 Min (12.70) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Symbol Min Typ Max Unit BVCBO 30 - - V Test Conditions IC=10µA BVCEX 20 - - V IC=1mA,VBE=3V BVCEO 10 - - V IC=1mA BVEBO 6 - - V IE=10µA Collector Cutoff Current ICBO - - 100 nA VCB=20V Emitter Cutoff Current IEBO - - 100 nA VBE=4V Collector-Emitter Saturation Voltage DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) VCE(sat) - 0.3 0.4 V IC=3A, IB=60mA hFE 140 210 400 - IC=3A, VCE=2V fT - 200 - MHz - 30 - pF Cob 380µs, Duty Cycle 2% IC=50mA, VCE=10V VCB=10V, f=1MHz