UNISONIC TECHNOLOGIES CO., LTD BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The UTC BD435 is suitable for medium power linear and switching applications. FEATURES * High DC current gain ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD435L-T60-K BD435G-T60-K BD435L-T60-K BD435G-T60-K Note: Pin assignment: G: Gate K: Cathode A: Anode Package TO-126 TO-126 Pin Assignment 1 2 3 K A G K A G Packing Bulk Bulk MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-026.A BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter Voltage VCEO 32 V Collector-Emitter Voltage VCES 32 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Current (Pulse) (Note 1) ICP 7 A Base Current IB 1 A Collector Dissipation (TC=25°C) Pc 36 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted) PARAMETER Collector-Emitter Sustaining Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain (Note 1) SYMBOL VCEO(SUS) ICBO ICEO IEBO hFE Collector-Emitter Saturation Voltage (Note 1) VCE(SAT) Base-Emitter ON Voltage (Note 1) VBE(ON) Current Gain Bandwidth Product fT Note: Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC=100mA, IB=0A VCB=32V, IE=0 VCE=32V, VBE=0 VEB=5V, IC=0 VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A IC=2A, IB=0.2A VCE=1V, IC=2A VCE=1V, IC=250mA MIN 32 TYP MAX 100 100 1 40 85 50 130 140 0.2 3 UNIT V µA µA mA 0.5 1.1 V V MHz 2 of 3 QW-R221-026.A BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R221-026.A