Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors BD433/435/437 TRANSISTOR (NPN) TO-126 FEATURES Power dissipation PCM: 1.25 Collector current 4 ICM: Collector-base voltage BD433 V(BR)CBO: W (Tamb=25℃) 1. EMITTER 2. COLLECTOR A 3. BASE 123 22 V BD435 32 V BD437 45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN BD433 Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 BD435 BD437 BD433 Collector-emitter breakdown voltage V(BR)CEO Ic=100mA, IB=0 BD435 BD437 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT IE=100µA, IC=0 VCB=22V, IE=0 BD433 VCB=32V, IE=0 BD435 VCB=45V, IE=0 BD437 VCE=22V, IE=0 BD433 VCE=32V, IE=0 BD435 VCE=45V, IE=0 BD437 V 22 32 45 V 5 V µA 10 µA 1 µA BD437 0.5 0.6 V BD433/BD435 1.1 BD437 1.2 BD433/BD435 BD437 BD433/BD435 BD437 IC=2A, IB=0.2A VCE=1V, IC=2A UNIT 1 VCE=1V, IC=500mA VCE=1V, IC=2A MAX 22 32 45 VEB=5V, IE=0 VCE=5V, IC=10mA TYP 85 40 30 50 40 BD433/BD435 VCE=1V, IC=250mA 3 V MHz