BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434, BD436, and BD438 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD433 BD435 BD437 PNP BD434 BD436 BD438 V CBO Collector-Base Voltage (I E = 0) 22 32 45 V V CES Collector-Emitter Voltage (V BE = 0) 22 32 45 V V CEO Collector-Emitter Voltage (I B = 0) 22 32 45 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 4 A IC I CM IB P tot T stg Tj Collector Peak Current (t ≤ 10 ms) 7 A Base Current 1 A Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature 36 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. June 1997 1/4 BD433/434/435/436/437/438 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.5 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CBO Collector Cut-off Current (I E = 0) Parameter for BD433/434 for BD435/436 for BD437/438 V CB = 22 V V CB = 32 V V CB = 45 V 100 100 100 µA µA µA I CES Collector Cut-off Current (V BE = 0) for BD433/434 for BD435/436 for BD437/438 V CE = 22 V V CE = 32 V V CE = 45 V 100 100 100 µA µA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE ∗ h FE ∗ Test Conditions I C = 100 mA for BD433/434 for BD435/436 for BD437/438 Collector-Emitter Saturation Voltage IC = 2 A I B = 0.2 A for BD433/434 for BD435/436 for BD437/438 Base-Emitter Voltage I C = 10 mA IC = 2 A DC Current Gain I C = 10 mA I C = 500 mA IC = 2 A h FE1 /h FE2 ∗ Matched Pair fT Transition frequency 2/4 V CE = 5 V for BD433/434 for BD435/436 for BD437/438 V CE = 1 V V CE = 1 V for BD433/434 for BD435/436 for BD437/438 IC = 500 mA V CE = 1 V V CE = 1 V Typ. V V V 22 32 45 0.2 0.2 0.2 0.5 0.5 0.6 0.58 V CE = 5 V V CE = 1 V for BD433/434 for BD435/436 for BD437/438 I C = 250 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Min. V 1.1 1.1 1.2 40 40 30 85 V V V V V V 130 130 130 140 50 50 40 1.4 3 MHz BD433/434/435/436/437/438 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 3/4 BD433/434/435/436/437/438 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4