IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 330 Qgs (nC) 84 Qgd (nC) 150 Configuration Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current Single • Enhanced Body Diode dV/dt Capability D • Compliant to RoHS Directive 2002/95/EC APPLICATIONS Super-247 • Hard Switching Primary or PFC Switch G • Switch Mode Power Supply (SMPS) S • Uninterruptible Power Supply D G S • High Speed Power Switching N-Channel MOSFET • Motor Drive ORDERING INFORMATION Package Super-247 IRFPS40N60KPbF Lead (Pb)-free SiHFPS40N60K-E3 IRFPS40N60K SnPb SiHFPS40N60K ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID TC = 100 °C Pulsed Drain Currenta UNIT V 40 24 A IDM 160 4.5 W/°C Single Pulse Avalanche Energyb EAS 600 mJ Repetitive Avalanche Currenta IAR 40 A EAR 57 mJ PD 570 W dV/dt 7.5 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a). c. ISD 38 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 www.vishay.com 1 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. UNIT RthJA RthCS RthJC 0.24 - 40 0.22 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance μA - 0.110 0.130 gfs VDS = 50 V, ID = 24 Ab 21 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 7970 - - 750 - - 75 - VDS = 1.0 V , f = 1.0 MHz - 9440 - VDS = 480 V , f = 1.0 MHz - 200 - - 260 - - - 330 RDS(on) ID = 24 Ab VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Coss eff. Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time VGS = 0 V VDS = 0 V to 480 Vc ID = 38 A, VDS = 480 V, see fig. 6 and 13b VGS = 10 V tr VDD = 300 V, ID = 38 A, RG = 4.3 , see fig. 10b td(off) tf - - 84 - - 150 - 47 - - 110 - - 97 - - 60 - - - 40 - - 160 pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Recovery Current Forward Turn-On Time trr Qrr IRRM ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 38 A, VGS = 0 Vb TJ = 25 °C TJ = 125 °C TJ = 25 °C IF = 38 A, dI/dt = 100 A/μs TJ = 125 °C TJ = 25 °C - - 1.5 - 630 950 - 730 1090 - 14 20 - 17 25 - 39 58 V ns μC A Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 100 I D, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1 0.1 4.5V 0.01 T J= 150 ° C 10 TJ = 25 °C 1 0.1 20μs PULSE WIDTH Tj = 25°C V DS= 50V 20μs PULSE WIDTH 0.001 0.1 1 10 0.01 100 4 6 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 3.5 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 20μs PULSE WIDTH Tj = 150°C 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics 100 13 15 I D = 38A 2.5 (Normalized) R DS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 1 Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 11 3.0 4.5V 0.1 10 Fig. 3 - Typical Transfer Characteristics TOP 10 8 V GS, Gate-to-Source Voltage (V) 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature 80 100 120 140 160 ( ° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix 100000 1000 VGS C iss C rss C oss = 0V, f = 1 MHZ =C +C , C SHORTED gs gd ds =C gd =C +C ds gd 100 Ciss I SD , Reverse Drain Current (A) C, Capacitance(pF) 10000 1000 Coss 100 Crss T J= 150 ° C 10 TJ = 25 °C 1 V GS = 0 V 10 0.1 1 10 100 0.2 1000 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 12 0.6 0.9 1.3 1.6 V SD,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 I D = 38A OPERATION IN THIS AREA LIMITED BY R DS(on) VDS = 480V VDS = 300V ID, Drain-to-Source Current (A) VDS = 120V 10 VGS , Gate-to-Source Voltage (V) 100 7 5 2 100μsec 10 1msec 1 10msec Tc = 25°C Tj = 150°C Single Pulse 0.1 0 0 50 100 150 200 250 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix RD VDS 40 VGS D.U.T. RG + - VDD 30 I D , Drain Current (A) 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 20 Fig. 10a - Switching Time Test Circuit VDS 10 90 % 0 25 50 75 100 TC , Case Temperature 125 150 10 % VGS ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms (Z thJC ) 1 D = 0.50 0.1 Thermal Response 0.20 0.10 0.05 0.01 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC 0.1 +TC 1 t 1, Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 www.vishay.com 5 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix VGS(th) Gate threshold Voltage (V) 5.0 15 V Driver L VDS D.U.T. RG + A - VDD IAS 20 V tp 0.01 Ω 4.5 4.0 ID = 250μA 3.5 3.0 2.5 Fig. 12a - Unclamped Inductive Test Circuit 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) VDS Fig. 12d - Threshold Voltage vs. Temperature tp QG VGS V QGS IAS QGD VG Fig. 12b - Unclamped Inductive Waveforms Charge 1200 ID EAS , Single Pulse Avalanche Energy (mJ) 960 TOP 17A 24A BOTTOM 38A Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 720 50 kΩ 12 V 0.2 µF 0.3 µF 480 + D.U.T. - VDS 240 VGS 3 mA 0 25 50 75 100 Starting Tj, Junction Temperature 125 150 ( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91261. Document Number: 91261 S11-0112-Rev. B, 31-Jan-11 www.vishay.com 7 Package Information Vishay Siliconix TO-274AA (HIGH VOLTAGE) B A E E4 A D2 E1 A1 R D1 D L1 L Detail “A” C b e A2 0.10 (0.25) M B A M 10° b4 b2 Lead Tip 5° Detail “A” Scale: 2:1 MILLIMETERS DIM. MIN. MAX. INCHES MIN. MAX. MILLIMETERS DIM. MIN. MAX. INCHES MIN. MAX. A 4.70 5.30 0.185 0.209 D1 15.50 16.10 0.610 0.634 A1 1.50 2.50 0.059 0.098 D2 0.70 1.30 0.028 0.051 A2 2.25 2.65 0.089 0.104 E 15.10 16.10 0.594 0.634 b 1.30 1.60 0.051 0.063 E1 13.30 13.90 0.524 0.547 b2 1.80 2.20 0.071 0.087 e b4 3.00 3.25 0.118 0.128 L 13.70 14.70 0.539 0.579 c 0.80 1.20 0.031 0.047 L1 1.00 1.60 0.039 0.063 D 19.80 20.80 0.780 0.819 R 2.00 3.00 0.079 0.118 5.45 BSC 0.215 BSC ECN: S-82247-Rev. A, 06-Oct-08 DWG: 5975 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body. 3. Outline conforms to JEDEC outline to TO-274AA. Document Number: 91365 Revision: 06-Oct-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000