PD- 95898 IRFPS43N50KPbF SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET® Power MOSFET VDSS RDS(on) typ. ID 0.078Ω 47A 500V Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage dv/dtPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Max. Units 47 29 190 540 4.3 ± 30 9.0 -55 to + 150 A W W/°C V V/ns 300 °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 910 47 54 mJ A mJ Typ. Max. Units ––– 0.24 ––– 0.23 ––– 40 °C/W Thermal Resistance Symbol RθJC RθCS RθJA www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient 1 09/14/04 IRFPS43N50KPbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ∆V(BR)DSS/∆TJ Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.078 0.090 Ω VGS = 10V, ID = 28A 3.0 ––– 5.0 V VDS = V GS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 25 140 55 74 8310 960 120 10170 240 440 Max. Units Conditions ––– S VDS = 50V, ID = 28A 350 ID = 47A 85 nC VDS = 400V 180 VGS = 10V, See Fig. 6 and 13 ––– VDD = 250V ––– I D = 47A ns ––– RG = 1.0Ω ––– VGS = 10V,See Fig. 10 ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V Diode Characteristics Symbol IS ISM VSD trr Q rr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min. Typ. Max. Units ––– ––– 47 ––– ––– 190 A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 47A, VGS = 0V TJ = 25°C, IF = 47A di/dt = 100A/µs D S ––– ––– 1.5 V ––– 620 940 ns ––– 14 21 µC ––– 38 ––– A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 47A (See Figure 12a). Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ISD ≤ 47A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 2 www.irf.com IRFPS43N50KPbF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 100 10 1 4.5V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 4.5V 1 100 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150° C 10 TJ = 25 ° C 1 V DS= 50V 20µs PULSE WIDTH 5 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 VDS , Drain-to-Source Voltage (V) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 1000 12 3.5 ID = 48A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFPS43N50KPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss 1000 Coss 100 Crss ID = 48A V DS= 400V V DS= 250V V DS= 100V 15 10 5 10 1 10 100 1000 0 0 50 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150 200 250 300 350 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 TJ = 150 ° C 100 10 TJ = 25 ° C 10us 100us 10 1ms 1 0.1 0.2 4 100 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance(pF) 100000 VGS , Gate-to-Source Voltage (V) 20 1000000 V GS = 0 V 0.7 1.2 1.7 2.2 1 TC = 25 °C TJ = 150 °C Single Pulse 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFPS43N50KPbF 50 VGS 40 ID , Drain Current (A) RD V DS RG 30 D.U.T. + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.05 0.01 0.02 0.01 0.001 0.00001 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFPS43N50KPbF EAS , Single Pulse Avalanche Energy (mJ) 2000 TOP BOTTOM ID 22A 30A 47A 15V 1500 DRIVER L VDS 1000 D.U.T RG + - VDD IAS 500 20V tp A 0.01Ω Fig 12c. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS tp I AS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V VGS .2µF .3µF D.U.T. QGS + V - DS QGD VG VGS 3mA IG ID Current Sampling Resistors Fig 13a. Gate Charge Test Circuit 6 Charge Fig 13b. Basic Gate Charge Waveform www.irf.com IRFPS43N50KPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T + - - + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFPS43N50KPbF Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com