IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current 180 Configuration Available Single • Low RDS(on) D • Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS G • Switch Mode Power Supply (SMPS) S • Uninterruptible Power Supply D G • High Speed Power Switching S • Hard Switched and High Frequency Circuits N-Channel MOSFET ORDERING INFORMATION Package Super-247 IRFPS43N50KPbF SiHFPS43N50K-E3 IRFPS43N50K SiHFPS43N50K Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 47 29 A IDM 190 4.3 W/°C EAS 910 mJ Currenta IAR 47 A Repetitive Avalanche Energya EAR 54 mJ PD 540 W dV/dt 9.0 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.82 mH, Rg = 25 , IAS = 47 A (see fig. 12c). c. ISD 47 A, dI/dt 230 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 www.vishay.com 1 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.23 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 28 Ab VGS = 10 V VDS = 50 V, ID = 28 A μA - 0.078 0.090 23 - - S - 8310 - - 960 - - 120 - - 10170 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Fall Time VDS = 1.0 V, f = 1.0 MHz VGS = 0 V Coss eff. Total Gate Charge Turn-Off Delay Time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 tr td(off) pF VDS = 400 V, f = 1.0 MHz - 240 - VDS = 0 V to 400 Vc - 440 - - - 350 - - 85 - - 180 - 25 - - 140 - - 55 - - 74 - - - 47 - - 190 - - 1.5 - 620 940 ns - 14 21 μC - 38 - A ID = 47 A, VDS = 400 V, see fig. 6 and 13b VGS = 10 V VDD = 250 V, ID = 47 A, RG = 1.0 , see fig. 10b tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Recovery Current Forward Turn-On Time IRRM ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 47 A, VGS = 0 Vb TJ = 25 °C, IF = 47 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 400 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 1000 100 10 1 4.5V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 TJ = 25 ° C 1 0.1 100 VDS , Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V I D , Drain-to-Source Current (A) 10 4.5V 1 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 4 5 6 7 8 9 10 11 12 Fig. 3 - Typical Transfer Characteristics TOP 100 V DS= 50V 20µs PULSE WIDTH VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 1000 TJ = 150° C 100 3.5 ID = 48A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 100000 100 Coss = Cds + Cgd 10000 Ciss 1000 Coss 100 1000 ISD , Reverse Drain Current (A) 1000000 Crss 10 1 10 100 TJ = 150 ° C 10 TJ = 25 ° C 1 0.1 0.2 1000 1.2 1.7 2.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 20 ID = 48A OPERATION IN THIS AREA LIMITED BY RDS(on) V DS= 400V V DS= 250V V DS= 100V ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 0.7 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS = 0 V 15 100 10 10us 100us 10 1ms 5 0 0 50 100 150 200 250 300 350 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1 TC = 25 °C TJ = 150 °C Single Pulse 10 10ms 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix RD VDS 50 VGS D.U.T. RG + - VDD ID , Drain Current (A) 40 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 30 Fig. 10a - Switching Time Test Circuit 20 VDS 90 % 10 0 25 50 75 100 125 10 % VGS 150 TC , Case Temperature ( °C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response(Z thJC ) 1 0.1 D = 0.50 0.01 0.20 0.10 0.05 0.02 0.01 0.001 0.00001 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 www.vishay.com 5 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix VDS 15 V tp Driver L VDS D.U.T RG + A - VDD IAS 20 V tp IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) 2000 ID 22A 30A 47A TOP BOTTOM 1500 1000 500 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91262. Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 www.vishay.com 7 Package Information Vishay Siliconix TO-274AA (HIGH VOLTAGE) B A E E4 A D2 E1 A1 R D1 D L1 L Detail “A” C b e A2 0.10 (0.25) M B A M 10° b4 b2 Lead Tip 5° Detail “A” Scale: 2:1 MILLIMETERS DIM. MIN. MAX. INCHES MIN. MAX. MILLIMETERS DIM. MIN. MAX. INCHES MIN. MAX. A 4.70 5.30 0.185 0.209 D1 15.50 16.10 0.610 0.634 A1 1.50 2.50 0.059 0.098 D2 0.70 1.30 0.028 0.051 A2 2.25 2.65 0.089 0.104 E 15.10 16.10 0.594 0.634 b 1.30 1.60 0.051 0.063 E1 13.30 13.90 0.524 0.547 b2 1.80 2.20 0.071 0.087 e b4 3.00 3.25 0.118 0.128 L 13.70 14.70 0.539 0.579 c 0.80 1.20 0.031 0.047 L1 1.00 1.60 0.039 0.063 D 19.80 20.80 0.780 0.819 R 2.00 3.00 0.079 0.118 5.45 BSC 0.215 BSC ECN: S-82247-Rev. A, 06-Oct-08 DWG: 5975 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body. 3. Outline conforms to JEDEC outline to TO-274AA. Document Number: 91365 Revision: 06-Oct-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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