VS-30EPH06PbF, VS-30EPH06-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Single diode device 2 3 1 1 Cathode TO-247AC modified • Designed and qualified JEDEC®-JESD 47 3 Anode according to Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Package TO-247AC modified (2 pins) IF(AV) 30 A VR 600 V VF at IF 1.34 V trr typ. See Recovery table TJ max. 175 °C Diode variation Single die State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 116 °C 30 Non-repetitive peak surge current IFSM TJ = 25 °C 300 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 30 A MIN. TYP. MAX. 600 - - - 2.0 2.6 IF = 30 A, TJ = 150 °C - 1.34 1.75 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 60 500 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 33 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 09-Jul-15 Document Number: 94018 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06PbF, VS-30EPH06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35 TJ = 25 °C - 31 - TJ = 125 °C - 77 - - 3.5 - - 7.7 - TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A TJ = 25 °C - 65 - TJ = 125 °C - 345 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.5 0.9 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.4 - - 6.0 - - 0.22 - oz. - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight 6.0 (5.0) Mounting torque Marking device Case style TO-247AC modified °C/W g 30EPH06 Revision: 09-Jul-15 Document Number: 94018 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06PbF, VS-30EPH06-N3 www.vishay.com Vishay Semiconductors 1000 100 TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 TJ = 175 °C 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 1000 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0 0.5 1 1.5 2.5 2 3 0 3.5 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 500 600 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 09-Jul-15 Document Number: 94018 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06PbF, VS-30EPH06-N3 www.vishay.com Vishay Semiconductors 90 160 70 DC 60 140 Square wave (D = 0.50) Rated VR applied 120 50 40 30 20 100 10 See note (1) 0 5 10 15 20 25 30 35 40 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 80 45 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 90 1200 80 1000 70 VR = 200 V TJ = 125 °C TJ = 25 °C RMS limit 800 60 50 Qrr (nC) Average Power Loss (W) IF = 30 A IF = 15 A 80 trr (ns) Allowable Case Temperature (°C) 180 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 40 30 20 10 IF = 30 A IF = 15 A 600 400 200 DC 0 100 0 0 5 10 15 20 25 30 35 40 45 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit Revision: 09-Jul-15 Document Number: 94018 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06PbF, VS-30EPH06-N3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 30 E P H 06 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: E = single diode 4 - Package: P = TO-247AC modified 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30EPH06PbF 25 500 Antistatic plastic tube VS-30EPH06-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95541 TO-247AC modified PbF www.vishay.com/doc?95255 TO-247AC modified -N3 www.vishay.com/doc?95442 Revision: 09-Jul-15 Document Number: 94018 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247 - 50 mils L/F modified DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM Ø P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb A1 b4 (b1, b3, b5) Plating View A - A C 2x e 0.10 M C A M (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e ØK L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q Revision: 21-Apr-15 Document Number: 95541 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000