VS-30EPH06PbF, VS-30EPH06-N3 Datasheet

VS-30EPH06PbF, VS-30EPH06-N3
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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
Base
common
cathode
2
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Single diode device
2
3
1
1
Cathode
TO-247AC modified
• Designed and qualified
JEDEC®-JESD 47
3
Anode
according
to
Available
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins)
IF(AV)
30 A
VR
600 V
VF at IF
1.34 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Single die
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 116 °C
30
Non-repetitive peak surge current
IFSM
TJ = 25 °C
300
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 30 A
MIN.
TYP.
MAX.
600
-
-
-
2.0
2.6
IF = 30 A, TJ = 150 °C
-
1.34
1.75
VR = VR rated
-
0.3
50
TJ = 150 °C, VR = VR rated
-
60
500
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
33
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
Revision: 09-Jul-15
Document Number: 94018
1
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VS-30EPH06PbF, VS-30EPH06-N3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
SYMBOL
trr
IRRM
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
28
35
TJ = 25 °C
-
31
-
TJ = 125 °C
-
77
-
-
3.5
-
-
7.7
-
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
TJ = 25 °C
-
65
-
TJ = 125 °C
-
345
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
0.5
0.9
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
-
0.4
-
-
6.0
-
-
0.22
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery charge
Qrr
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
6.0
(5.0)
Mounting torque
Marking device
Case style TO-247AC modified
°C/W
g
30EPH06
Revision: 09-Jul-15
Document Number: 94018
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH06PbF, VS-30EPH06-N3
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Vishay Semiconductors
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
10
1
TJ = 175 °C
100
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
1000
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.0001
0
0.5
1
1.5
2.5
2
3
0
3.5
100
200
300
400
500
600
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
100
200
300
400
500
600
ZthJC - Thermal Impedance (°C/W)
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 09-Jul-15
Document Number: 94018
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH06PbF, VS-30EPH06-N3
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Vishay Semiconductors
90
160
70
DC
60
140
Square wave (D = 0.50)
Rated VR applied
120
50
40
30
20
100
10
See note (1)
0
5
10
15
20
25
30
35
40
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
80
45
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
90
1200
80
1000
70
VR = 200 V
TJ = 125 °C
TJ = 25 °C
RMS limit
800
60
50
Qrr (nC)
Average Power Loss (W)
IF = 30 A
IF = 15 A
80
trr (ns)
Allowable Case Temperature (°C)
180
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
40
30
20
10
IF = 30 A
IF = 15 A
600
400
200
DC
0
100
0
0
5
10
15
20
25
30
35
40
45
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR


(1)
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 09-Jul-15
Document Number: 94018
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30EPH06PbF, VS-30EPH06-N3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
30
E
P
H
06
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration:
E = single diode
4
-
Package:
P = TO-247AC modified
5
-
H = hyperfast recovery
6
-
Voltage rating (06 = 600 V)
7
-
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30EPH06PbF
25
500
Antistatic plastic tube
VS-30EPH06-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95541
TO-247AC modified PbF
www.vishay.com/doc?95255
TO-247AC modified -N3
www.vishay.com/doc?95442
Revision: 09-Jul-15
Document Number: 94018
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247 - 50 mils L/F modified
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
Ø P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
A1
b4
(b1, b3, b5)
Plating
View A - A
C
2x e
0.10 M C A M
(4)
E1
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
ØK
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 21-Apr-15
Document Number: 95541
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000