Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package VCE(on) typ. = 1.13V @ VGE = 15V, IC = 200A TJ = 25°C Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized as output inverter stage for TIG welding machines INT-A-PAK Absolute Maximum Ratings Parameters VCES Collector-to-Emitter Voltage IC Continuos Collector Current Max Units 600 V @ TC = 25°C 480 A @ T C = 110°C 220 ICM Pulsed Collector Current ILM Peak Switching Current 800 VGE Gate-to-Emitter Voltage ± 20 VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation @ TC = 25°C 830 @ TC = 85°C 430 www.irf.com 800 V W 1 GA200HS60S1 Bulletin I27222 03/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VCES V CE(on) Collector-to-Emitter Breakdown Voltage 600 Collector-to-Emitter Voltage V GE(th) Gate Threshold Voltage I CES Collector-to-Emiter Leakage Current I GES Gate-to-Emitter Leakage Current 3 V V GE = 0V, I C = 1mA V GE = 15V, I C = 200A 1.13 1.21 1.08 1.18 4.5 6 0.025 1 10 mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125°C ± 250 nA V GE = ± 20V V GE = 15V, I C = 200A, T J = 125°C I C = 0.25mA Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss 1600 1700 260 340 580 670 30 50 80 34 104 106 121 Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance 32500 2080 380 nC IC = 200A VCC = 400V VGE = 15V mJ IC = 200A, VCC = 480V, VGE = 15V Rg = 10Ω free-wheeling DIODE: 30EPH06 mJ IC = 200A, VCC = 480V, VGE = 15V Rg = 10Ω free-wheeling DIODE: 30EPH06, TJ = 125°C pF VGE = 0V VCC = 30V f = 1.0 MHz Thermal- Mechanical Specifications Parameters Min Max Units TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 R thJC Junction-to-Case (Per Leg) RthCS Case-to-Sink T Mounting torque Weight 2 Typ 0.15 °C/ W Case to heatsink 4 Nm Case to terminal 1, 2, 3 3 0.1 185 g www.irf.com GA200HS60S1 Bulletin I27222 03/06 1000 1000 500µs Pulse Width IC , Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) Vge = 15V Tj = 125°C 100 Tj = 25°C 10 Tj = 125°C 10 Tj = 25°C 1 0.6 0.8 1.0 1.2 1.4 1.6 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VCE, Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 160 7.5 1.6 140 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 100 120 100 80 60 40 20 400A 1.4 1.2 200A 120A 1 0.8 0 0 100 200 300 400 500 20 40 60 80 100 120 140 160 TC, Case Temperature (°C) TJ , Junction Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 3 GA200HS60S1 Bulletin I27222 03/06 50 14 Eoff typ. 45 12 Switching Losses (mJ) VGE, Gate-to-Emitter Voltage (V) 16 10 8 6 4 40 Tj = 25°C Vce = 480V Vge = 15V Ic = 200A 35 Eon typ. 30 25 2 Free-wheeling diode 30EPH06 typical value 0 20 0 300 600 900 1200 1500 1800 0 10 20 30 40 50 QG, Total Gate Charge (nC) RG, Gate Reistance (Ω) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage Fig. 6 - Typical Switching Losses vs Gate Resistance Switching Losses (mJ) 80 70 Tj = 125°C Vce = 480V 60 Vge = 15V Vge = 10Ω 50 Free-wheeling diode 30EPH06 40 Eoff typ. 30 20 Eon typ. 10 0 50 75 100 125 150 175 200 IC, Collector-to-Emitter Current (A) Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA200HS60S1 Bulletin I27222 03/06 Outline Table Functional Diagram Electrical Diagram Dimensions in millimeters www.irf.com 5 GA200HS60S1 Bulletin I27222 03/06 Ordering Information Table Device Code GA 200 1 H S 60 S 1 3 4 5 6 7 2 1 - Essential Part Number IGBT modules 2 - Current rating 3 - Circuit Configuration (H = Half Bridge without f/w diode) 4 - Int-A-Pak 5 - Voltage Code (60 = 600V) 6 - Speed/ Type (S = Standard Speed IGBT) 7 - Assy location IRCI (200 = 200A) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/06 6 www.irf.com