VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Very low conduction losses • Industry standard package • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 INT-A-PAK BENEFITS • Increased operating efficiency PRODUCT SUMMARY • Direct mounting to heatsink VCES 600 V IC DC 480 A • Performance optimized as output inverter stage for TIG welding machines VCE(on) at 200 A, 25 °C 1.13 V Speed DC to 1 kHz Package INT-A-PAK Circuit Half bridge ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 600 V TC = 25 °C 480 TC = 116 °C 200 ICM Peak switching current ILM 800 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation Operating junction temperature range Storage temperature range PD A 800 Any terminal to case, t = 1 min 2500 TC = 25 °C 830 TC = 85 °C 430 V W TJ -40 to +150 TStg -40 to +125 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Collector to emitter leakage current ICES Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 200 A - 1.13 1.21 VGE = 15 V, IC = 200 A, TJ = 125 °C - 1.08 1.18 IC = 0.25 mA 3 4.5 6 VGE = 0 V, VCE = 600 V - 0.025 1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 10 VGE = ± 20 V - - ± 250 VGE = 0 V, IC = 1 mA UNITS V mA nA Revision: 10-Jun-15 Document Number: 94362 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge Qg Gate to emitter charge Qge Gate to collector charge Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres TEST CONDITIONS MIN. TYP. MAX. IC = 200 A VCC = 400 V VGE = 15 V - 1600 1700 - 260 340 - 580 670 IC = 200 A, VCC = 480 V, VGE = 15 V Rg = 10 Freewheeling diode: 30EPH06, TJ = 25 °C - 30 - - 50 - - 80 - - 34 - - 104 - - 138 151 - 32 500 - - 2080 - - 380 - IC = 200 A, VCC = 480 V, VGE = 15 V Rg = 10 Freewheeling diode: 30EPH06, TJ = 125 °C VGE = 0 V VCC = 30 V f = 1.0 MHz UNITS nC mJ mJ pF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ -40 - 150 TStg -40 - 125 Junction to case per leg RthJC - - 0.15 Case to sink RthCS - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - Operating junction temperature range Storage temperature range Mounting torque 1000 IC - Collector to Emitter Current (A) IC - Collector to Emitter Current (A) Weight VGE = 15 V 500 µs pulse width TJ = 125 °C 100 TJ = 25 °C 10 0.6 0.8 1.0 1.2 1.4 1.6 UNITS °C °C/W Nm g 1000 100 TJ = 125 °C 10 TJ = 25 °C 1 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VCE - Collector to Emitter Voltage (V) VGE - Gate to Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 7.5 Revision: 10-Jun-15 Document Number: 94362 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors 16 VGE - Gate to Emitter Voltage (V) TC - Case Temperature (°C) 160 140 120 100 80 60 40 20 14 12 10 8 Typical value 6 4 2 0 0 0 100 200 300 400 0 500 300 900 1200 1500 1800 QG - Total Gate Charge (nC) Maximum DC Collector Current (A) Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 3 - Case Temperature vs. Maximum Collector Current 50 1.6 400 A 1.4 1.2 200 A 120 A 1.0 40 40 60 80 100 120 140 TJ = 25 °C VCE = 480 V VGE = 15 V IC = 200 A 35 Eon typical 30 25 0.8 20 Eoff typical 45 Switching Losses (mJ) VCE - Collector to Emitter Voltage (V) 600 Freewheeling diode 30EPH06 20 160 0 10 20 30 40 50 TJ - Junction Temperature (°C) RG - Gate Resistance (Ω) Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature Fig. 6 - Typical Switching Losses vs. Gate Resistance 80 TJ = 125 °C VCE = 480 V VGE = 15 V VGE = 10 Ω Switching Losses (mJ) 70 60 50 Eoff typical Freewheeling diode 30EPH06 40 30 20 Eon typical 10 0 50 75 100 125 150 175 200 IC - Collector to Emitter Current (A) Fig. 7 - Typical Switching Losses vs. Collector to Emitter Current Revision: 10-Jun-15 Document Number: 94362 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- GA 200 H S 60 S 1 PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Essential part number IGBT modules 3 - Current rating (200 = 200 A) 4 - Circuit configuration (H = Half bridge without f/w diode) 5 - INT-A-PAK 6 - Voltage code (60 = 600 V) 7 - Speed/type (S = Standard speed IGBT) 8 - Assy location Italy 9 - None = Standard production; PbF = Lead (Pb)-free CIRCUIT CONFIGURATION 3 3 6, 7 6 7 1 1 4 4, 5 5 2 Functional Diagram 2 Electrical Diagram LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95173 Revision: 10-Jun-15 Document Number: 94362 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) Ø 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 35 (1.38) 17 (0.67) 3 66 (2.60) 37 (1.44) 94 (3.70) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: [email protected] www.vishay.com 1 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK IGBT Ø 6.5 (Ø 0.25) 80 (3.15) 23 (0.91) 14.3 (0.56) 23 (0.91) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 2 3 5 1 66 (2.60) 3 screws M6 x 10 4 35 (1.38) 7 6 17 (0.67) 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) 37 (1.44) 94 (3.70) Revision: 27-Mar-13 Document Number: 95173 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000