VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK TO-220AC • Low leakage current • Fully isolated package (VINS = 2500 VRMS) Base cathode 2 • UL E78996 approved Available 1 Cathode 1 Cathode 3 Anode VS-8ETX06PbF VS-8ETX06-N3 • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode DESCRIPTION / APPLICATIONS VS-8ETX06FPPbF VS-8ETX06FP-N3 State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recover time, and soft recovery. PRODUCT SUMMARY Package The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. TO-220AC, TO-220FP IF(AV) 8A VR 600 V VF at IF 1.4 V trr (typ.) 15 ns TJ max. 175 °C Diode variation Single die These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive peak reverse voltage TEST CONDITIONS VRRM Average rectified forward current FULL-PAK Non-repetitive peak surge current IF(AV) IFSM Repetitive peak forward current Operating junction and storage temperatures TC = 143 °C VALUES UNITS 600 V 8 TC = 106 °C TJ = 25 °C A 110 IFM 18 TJ, TStg -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 8 A MIN. TYP. MAX. 600 - - - 2.3 3.0 IF = 8 A, TJ = 150 °C - 1.4 1.7 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 35 500 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Revision: 13-May-16 Document Number: 94032 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 15 19 IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 16 24 TJ = 25 °C - 17 - - 40 - TJ = 125 °C Peak recovery current TJ = 25 °C IRRM Reverse recovery charge TJ = 125 °C Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge IF = 8 A dIF/dt = 200 A/μs VR = 390 V - 2.3 - - 4.5 - TJ = 25 °C - 20 - TJ = 125 °C - 100 - IF = 8 A dIF/dt = 600 A/μs VR = 390 V TJ = 125 °C Qrr UNITS ns A nC - 31 - ns - 12 - A - 195 - nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case TEST CONDTIONS TJ, TStg MIN. TYP. MAX. UNITS -65 - 175 °C - 1.4 2 - 3.4 4.3 RthJC (FULL-PAK) Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Case style TO-220AC Marking device °C/W g 8ETX06 Case style TO-220 FULL-PAK 8ETX06FP 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 100 TJ = 150 °C TJ = 125 °C 10 TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-May-16 Document Number: 94032 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 . 0.1 1 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Revision: 13-May-16 Document Number: 94032 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors 20 18 170 Average Power Loss (W) Allowable Case Temperature (°C) 180 160 DC 150 Square wave (D = 0.50) Rated VR applied 140 130 See note (1) RMS limit 14 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 8 6 4 DC 2 0 120 0 2 4 6 8 2 0 12 10 4 6 8 10 12 14 IF(AV) (A) Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 8 - Forward Power Loss Characteristics 180 50 160 IF = 16 A 40 140 IF = 8 A DC 120 trr (ns) Allowable Case Temperature (°C) 16 Square wave (D = 0.50) Rated VR applied 100 80 30 VR = 390 V TJ = 125 °C TJ = 25 °C 20 IF = 16 A 60 IF = 8 A See note (1) 10 100 40 0 2 4 6 8 10 12 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt 300 VR = 390 V TJ = 125 °C TJ = 25 °C 250 Qrr (nC) 200 IF = 8 A IF = 16 A 150 100 IF = 16 A 50 IF = 8 A 0 100 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 13-May-16 Document Number: 94032 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Revision: 13-May-16 Document Number: 94032 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E T X 06 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - E = single diode 4 - T = TO-220, DPAK 5 - X = hyperfast rectifier 6 - Voltage rating (06 = 600 V) 7 - None = TO-220AC FP = TO-220 FULL-PAK 8 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8ETX06PbF QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube VS-8ETX06-N3 50 1000 Antistatic plastic tube VS-8ETX06FPPbF 50 1000 Antistatic plastic tube VS-8ETX06FP-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Part marking information TO-220AC www.vishay.com/doc?95221 TO-220FP www.vishay.com/doc?95005 TO-220ACPbF www.vishay.com/doc?95224 TO-220AC-N3 www.vishay.com/doc?95068 TO-220FPPbF www.vishay.com/doc?95009 TO-220FP-N3 www.vishay.com/doc?95440 Revision: 13-May-16 Document Number: 94032 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000