V23990-P629-L83-PM target datasheet flow BOOST 0 SiC 1200 V / 80 mΩ Features ● ● ● ● flow 0 12mm housing High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET (Cree) and 1200V SiC diode (Cree) Schematic Target applications ● Solar inverter Types ● V23990-P629-L83-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 16 A 60 A 1000 mJ 39 W Boost Switch Drain-source voltage V DSS Drain current ID T j = T jmax Peak drain current I DM t p limited by T jmax Avalanche energy, single pulse E AS Total power dissipation P tot Gate-source voltage V GSS -10/+25 V Maximum Junction Temperature T jmax 150 °C Copyright Vincotech Ts = 80 °C I D = 20 A V DD = 50 V T j = T jmax 1 Ts = 80 °C 21 Jul. 2015 / Revision 1 V23990-P629-L83-PM target datasheet Parameter Conditions Symbol Value Unit 1200 V 15 A 52 A 44 W 175 °C Value Unit 1600 V 33 A 200 A 200 A s 43 W 150 °C Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T h = 80°C T j = T jmax T h = 80°C Conditions Symbol Bypass Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM 2 Surge current capability I t Total power dissipation P tot Maximum Junction Temperature T jmax T j = T jmax T h = 80°C 50 Hz Single Half Sine Wave t p = 10 ms T j = 150°C T j = T jmax T h = 80°C 2 Module Properties Copyright Vincotech 2 21 Jul. 2015 / Revision 1 V23990-P629-L83-PM target datasheet Characteristic Values Boost Switch Parameter Symbol Conditions Value V GS [V] V DS [V] I D [A] T j[ °C] Min Typ Unit Max Static 25 Drain-sourc e on-state resistanc e Gate-source threshold voltage 10 r DS(on) V GS(th) 20 V GS = V DS 0,001 Gate to Sourc e Leakage Current I GSS -10/+25 0 Zero Gate Voltage Drain Current I DSS 0 84 98 125 136 208 150 - 25 1,7 2,2 25 250 125 25 1200 100 125 Internal gate resistance rg 4,6 Gate c harge Qg 49,2 Gate to source charge Q GS Gate to drain charge Q GD 18 Short-circ uit input capacitance C iss 950 Short-circ uit output capacitance C oss Reverse transfer capac itance C rss 0/10 f=1MHz 0 800 - 125 20 1000 25 V nA µA Ω 10,8 25 mΩ nC 80 pF 6,5 Thermal Thermal resistance junction to sink R th(j-s) Phase-Change Material λ=3,4 W/mK 1,79 K/W Value Unit Boost Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max 25 1,49 1,8 125 1,92 150 - Static Forward voltage Reverse leakage c urrent 10 VF 1200 Ir 25 V 300 150 µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) Phase-Change Material ʎ =3,4W/mK 2,15 3 K/W 21 Jul. 2015 / Revision 1 V23990-P629-L83-PM target datasheet Bypass Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,22 1,9 125 1,21 Static Forward voltage VF Reverse leakage c urrent Ir 25 25 1600 50 150 1100 V µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W /mK 1,61 K/W Value Unit Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] 100 R100=1486 Ω Power dissipation constant Typ Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 4 21 Jul. 2015 / Revision 1 V23990-P629-L83-PM target datasheet Ordering Code & Marking Version without thermal paste 12mm housing Vinco WWYY NNNNNNNVV UL LLLLL SSSS Ordering Code V23990-P629-L83-PM Text Datamatrix in DataMatrix as P629L83 in packaging barcode as P629L83 Vinco Date code Name&Ver UL Lot Serial Vinco WWYY NNNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 0 22,5 G1 2 2,9 22,5 S1 3 8,3 22,5 DC-Boost1 4 10,8 22,5 DC-Boost1 5 19,6 22,5 DC+Boost 6 22,1 22,5 DC+Boost 7 29,1 22,5 DC+In1 8 32 22,5 DC+In1 9 33,5 17,8 Boost1 10 33,5 15,3 Boost1 11 12 13 33,5 33,5 32 7,2 4,7 0 Boost2 Boost2 14 29,1 0 DC+In2 15 22,1 0 DC+Boost 16 19,6 0 DC+Boost 17 10,8 0 DC-Boost2 18 8,3 0 DC-Boost2 19 2,9 0 S2 20 0 0 G2 21 0 8 22 0 14,5 Therm1 Therm2 Copyright Vincotech DC+In2 5 21 Jul. 2015 / Revision 1 V23990-P629-L83-PM target datasheet Pinout Identification ID Component Voltage Current Function T1,T2 MOSFET 1200 V 80mΩ Boost Switch D3,D4 FWD 1200 V 10A Boost Diode D5,D6 Rectifier 1600 V 25A Bypass Diode Rt NTC - - Thermistor Copyright Vincotech 6 Comment 21 Jul. 2015 / Revision 1 V23990-P629-L83-PM target datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Document No.: Date: V23990-P629-L83-T1-14 21 Jul. 2015 Modification: Pages Product status definition Datasheet Status Product Status Target Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 7 21 Jul. 2015 / Revision 1