V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet flow BOOST 0 1200 V / 50 A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications Press-fit pins solder pins ● solar inverter Schematic Types ● V23990-P629-L43-PM ● V23990-P629-L43Y-PM Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1600 V 38 45 A 220 A 200 A2s 47 71 W 150 °C Bypass Diode D5, D6 / Boost Sw. Protection Diode D1, D2 Repetitive peak reverse voltage V RRM Mean forward current I FAV Surge (non-repetitive) forward current I FSM 2 t p=10ms T j=25°C 2 I t-value I t Power dissipation P tot Maximum Junction Temperature T j=T jmax T s = 80°C T c=80°C T j=T jmax T s = 80°C T c=80°C T jmax Boost Switch (T1,T2) Collector-emitter break down voltage DC collector current Repetitive peak collector current V CES IC I CRM Power dissipation P tot Gate-emitter peak voltage V GE Short circuit ratings t SC V CC copyright Vincotech T s = 80°C T c=80°C t p limited by T jmax T j≤150°C V CE<=V CES Turn off safe operating area Maximum Junction Temperature T j=T jmax T j=T jmax T j≤150°C V GE=15V T jmax 1 T s = 80°C T c=80°C 1200 V 51 65 A 150 A 100 A 144 210 W ±20 V 10 800 µs V 175 °C 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Maximum Ratings T j=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 28 34 A 138 A 95 A2s Boost Diode (D3,D4) Peak Repetitive Reverse Voltage V RRM Mean forward current I FAV Surge (non-repetitive) forward current I FSM 2 I t-value Repetitive peak forward current T j=T jmax T s = 80°C T c=80°C t p=10ms T j=25°C 2 I t I FRM t p limited by T jmax 78 A 81 123 W T jmax 175 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T op -40…+(T jmax - 25) °C Power dissipation Maximum Junction Temperature P tot T s = 80°C T c=80°C T j=T jmax Thermal Properties Insulation Properties Insulation voltage t=2s DC voltage Creepage distance solder pins / Press-fit pins Clearance copyright Vincotech 2 4000 V min 12,7 mm 9,55 / 9,57 mm 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Characteristic Values Parameter Conditions Symbol V GE [V] or V GS [V] V r [V] or V CE [V] or V DS [V] Value I C [A] or I F [A] or I D [A] T j [°C] Unit Min Typ Max 0,8 1,14 1,10 0,92 0,80 0,009 0,012 1,9 Bypass Diode D5, D6 / Boost Sw. Protection Diode D1, D2 Forward voltage VF 25 Threshold voltage (for power loss calc. only) V to 25 Slope resistance (for power loss calc. only) rt 25 Reverse current Ir Thermal resistance junction to sink Thermal resistance junction to sink 1500 25 125 25 125 25 125 25 125 V V Ω 0,05 mA R th(j-s) phase-change material ʎ=3,4W/mK 1,49 K/W R th(j-s) Thermal grease tickness≤ 50um λ= 1 W/K 1,73 K/W V GE(th) V GE=V CE Boost Switch (T1,T2) Gate emitter threshold voltage Collector-emitter saturation voltage V CEsat 0,0017 15 50 Collector-emitter cut-off I CES 0 1200 Gate-emitter leakage current I GES 20 0 Integrated Gate resistor R gint Turn-on delay time t d(on) Rise time Turn-off delay time Fall time tf Turn-on energy loss E on Turn-off energy loss E off Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Gate charge QG Thermal resistance junction to sink Thermal resistance junction to sink 5,2 5,8 6,4 1,5 2,13 2,58 2,5 0,05 600 4 tr t d(off) 25 125 25 125 25 125 25 125 R goff=4 Ω R gon=4 Ω 15 700 40 25 125 25 125 25 125 25 125 25 125 25 125 V V mA nA Ω 27 27 14 17 256 320 47 57 1,051 1,224 1,540 2,430 ns mWs 2770 f=1MHz 0 25 25 pF 240 160 15 960 50 25 230 nC R th(j-s) phase-change material ʎ=3,4W/mK 0,66 K/W R th(j-s) Thermal grease tickness≤ 50um λ= 1 W/K 0,80 K/W Boost Diode (D3, D4) Forward voltage VF Reverse leakage current I rm Peak recovery current I RRM Reverse recovery time t rr Reverse recovery charge Q rr Reverse recovered energy E rec Peak rate of fall of recovery current 15 1200 R gon=4 Ω 700 ( di rf/dt )max Thermal resistance junction to sink R th(j-s) phase-change material ʎ=3,4W/mK Thermal resistance junction to case R th(j-s) Thermal grease tickness≤ 50um λ= 1 W/K copyright Vincotech 15 3 40 25 125 25 125 25 125 25 125 25 125 25 125 25 125 1,43 1,69 2 150 17 15 9 9 0,24 0,21 0,093 0,074 6570 5559 V µA A ns µC mWs A/µs 1,17 K/W 1,36 K/W 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Characteristic Values Parameter Conditions Symbol V GE [V] or V GS [V] V r [V] or V CE [V] or V DS [V] Value I C [A] or I F [A] or I D [A] T j [°C] Min Typ Unit Max Thermistor Rated resistance R Deviation of R100 Δ R/R Power dissipation P 25 R 100=1486 Ω 100 25 Power dissipation constant 22 -12 kΩ 12 % 200 mW 25 2 mW/K B-value B (25/50) Tol.±3% 25 3950 K B-value B (25/100) Tol.±3% 25 3998 K B Vincotech NTC Reference copyright Vincotech 4 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 1 Typical output characteristics I C = f(V CE) T1, T2 Figure 2 Typical output characteristics I C = f(V CE) IC (A) 150 IC(A) 150 120 120 90 90 60 60 30 30 0 T1, T2 0 0 At tp = Tj = V GE from 1 2 3 4 V CE (V) 5 0 At tp = Tj = V GE from 250 µs 25 °C 7 V to 17 V in steps of 1 V Figure 3 T1, T2 1 2 3 4 V CE (V) 250 µs 125 °C 7 V to 17 V in steps of 1 V Figure 4 Typical transfer characteristics I C = f(V GE) 5 D3,D4 Typical diode forward current as a function of forward voltage I F = f(V F) 50 IF (A) IC (A) 50 40 40 30 30 20 20 10 10 0 0 0 2 At tp = V CE = 100 10 copyright Vincotech 4 µs V 6 Tj = 8 25/125 10 V GE (V) 12 0 At tp = °C 5 1 250 2 µs 3 Tj = 4 25/125 V F (V) 5 °C 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 5 T1, T2 Figure 6 T1, T2 Typical switching energy losses Typical switching energy losses as a function of collector current E = f(I C) as a function of gate resistor E = f(R G) E (mWs) 5 E (mWs) 5 Eoff High T 4 4 Eon High T Eon Low T 3 Eon High T 3 Eon Low T Eoff High T Eoff Low T 2 2 Eoff Low T 1 1 0 0 0 20 40 60 80 0 I C (A) With an inductive load at Tj = 25/125 °C V CE = 700 V V GE = 15 V R gon = 4 Ω R goff = 4 Ω 8 12 16 RG (Ω ) 20 With an inductive load at Tj = 25/125 °C V CE = 700 V V GE = 15 V IC = 40 A Figure 7 Typical reverse recovery energy loss as a function of collector current E rec = f(I c) D3,D4 Figure 8 Typical reverse recovery energy loss as a function of gate resistor E rec = f(R G) D3,D4 0,12 E (mWs) 0,12 E (mWs) 4 Erec Low T 0,1 0,08 0,1 0,08 Erec High T 0,06 0,06 0,04 0,04 0,02 0,02 Erec Low T Erec High T 0 R (K/W) 0 0 20 40 60 I C (A) R (K/W) 0 80 With an inductive load at Tj = 25/125 °C V CE = 700 V V GE = 15 V R gon = 4 Ω R goff = 4 Ω copyright Vincotech 4 8 12 16 R G( Ω ) 20 With an inductive load at Tj = 25/125 °C V CE = 700 V V GE = 15 V IC = 40 A 6 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 9 T1, T2 Figure 10 T1, T2 Typical switching times as a Typical switching times as a function of collector current t = f(I C) function of gate resistor t = f(R G) 1 t ( µs) t ( µs) 1 tdoff tdoff 0,1 0,1 tf tf tdon tdon tr tr 0,01 0,01 0,001 0,001 0 20 40 60 I C (A) 0 80 With an inductive load at Tj = 126 °C V CE = 700 V V GE = 15 V R gon = 4 Ω R goff = 4 Ω 4 8 12 16 R G ( Ω) 20 With an inductive load at Tj = 126 °C V CE = 700 V V GE = 15 V IC = 40 A Figure 11 Typical reverse recovery time as a function of collector current t rr = f(I c) D3,D4 Figure 12 Typical reverse recovery time as a function of IGBT turn on gate resistor t rr = f(R gon) 0,014 t rr( µs) t rr( µs) 0,014 D3,D4 0,012 0,012 0,01 0,01 trr High T trr High T 0,008 trr Low T 0,008 trr Low T 0,006 0,006 0,004 0,004 0,002 0,002 0 0 0 At Tj = V CE = V GE = R gon = 20 25/125 700 15 4 copyright Vincotech 40 60 I C (A) 0 80 At Tj = VR= IF= V GE = °C V V Ω 7 4 25/125 700 40 15 8 12 16 R Gon ( Ω) 20 °C V A V 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 13 D3,D4 Figure 14 D3,D4 Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current Q rr = f(I C) function of IGBT turn on gate resistor Q rr = f(R gon) 0,3 Qrr ( µC) Qrr ( µC) 0,3 Qrr Low T 0,25 0,25 Qrr High T Qrr Low T 0,2 0,2 Qrr High T 0,15 0,15 0,1 0,1 0,05 0,05 0 0 0 At At Tj = V CE = V GE = R gon = 20 40 25/125 700 15 °C V V 4 Ω 60 I C (A) 80 0 At Tj = VR = IF= V GS = Figure 15 Typical reverse recovery current as a function of collector current I RRM = f(I C) D3,D4 4 25/125 700 40 15 8 12 16 R Gon ( Ω) 20 °C V A V Figure 16 Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(R gon) D3,D4 25 IrrM (A) IrrM (A) 25 20 IRRM Low T 20 IRRM Low T IRRM High T 15 15 IRRM High T 10 10 5 5 0 0 0 At Tj = V CE = V GE = R gon = 20 25/125 700 15 4 copyright Vincotech 40 60 I C (A) 80 °C V V Ω 8 0 4 At Tj = VR= IF= V GE = 25/125 700 40 15 8 12 16 R Gon ( Ω) 20 °C V A V 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 17 D3,D4 Figure 18 D3,D4 Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I c) and reverse recovery current as a function of IGBT turn on gate resistor dI 0/dt ,dI rec/dt = f(R gon) 10000 dI0/dt direc / dt (A/ µs) direc / dt (A/ µs) 10000 dIrec/dt 8000 dI0/dt dIrec/dt 8000 6000 6000 4000 4000 2000 2000 0 0 0 At Tj = V CE = V GE = R gon = 20 40 25/125 700 °C V 15 4 V Ω 60 I C (A) 80 0 At Tj = Figure 19 IGBT transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) T1, T2 4 8 VR = IF= 25/125 700 40 °C V A V GE = 15 V 12 R Gon ( Ω) 16 Figure 20 FWD transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 20 D3,D4 101 Zth(j-s) (K/W) Zth(j-s) (K/W) 100 100 10-1 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-2 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-2 10-3 10-3 10-5 At D = 10-4 10-3 10-2 10-1 100 t p (s) 101 10-5 At D = tp/T phase-change material Thermal grease R th(j-s) = R th(j-s) = 0,66 K/W K/W 0,80 IGBT thermal model values phase-change material Thermal grease R (K/W) Tau (s) R (K/W) Tau (s) 0,085 1,272 0,103 1,272 0,179 0,314 0,053 0,029 0,186 0,060 0,005 0,000 copyright Vincotech 0,216 0,378 0,064 0,035 10-4 10-3 10-2 10-1 100 t p (s) 101 tp/T phase-change material Thermal grease R th(j-s) = R th(j-s) = 1,17 K/W 1,36 K/W FWD thermal model values phase-change material Thermal grease R (K/W) Tau (s) R (K/W) Tau (s) 0,043 9,803 0,050 9,80 0,186 0,060 0,005 0,000 0,101 0,383 0,308 0,233 0,098 9 0,815 0,098 0,026 0,005 0,001 0,118 0,445 0,358 0,271 0,114 0,82 0,10 0,03 0,01 0,00 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 21 T1, T2 Figure 22 T1, T2 Power dissipation as a Collector current as a function of heatsink temperature P tot = f(T h) function of heatsink temperature I C = f(T h) 80 IC (A) Ptot (W) 300 270 70 240 60 210 50 180 150 40 120 30 90 20 60 10 30 0 0 0 At Tj = 50 175 100 150 Ts ( o C) 200 0 At Tj = V GE = ºC Figure 23 D3,D4 50 175 15 100 150 200 ºC V Figure 24 Power dissipation as a function of heatsink temperature P tot = f(T s) Ts ( o C) D3,D4 Forward current as a function of heatsink temperature I F = f(T s) 50 IF (A) Ptot (W) 175 150 40 125 30 100 75 20 50 10 25 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T s ( o C) 200 0 At Tj = ºC 10 50 175 100 150 T s ( o C) 200 ºC 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 25 Safe operating area as a function T1, T2 Figure 26 Gate voltage vs Gate charge of collector-emitter voltage I C = f(V CE) V GE = f(Q g) T1, T2 16 IC (A) VGS (V) 1103 14 100uS 102 100mS 10uS 240V 12 960V 10 10mS 1mS 8 101 6 DC 4 100 2 0 100 101 At D = 103 102 0 V CE (V) At IC = single pulse Ts = V GE = Tj = 80 15 T jmax 50 50 100 150 200 250 Qg (nC) 300 A ºC V ºC Figure 27 T1, T2 Figure 28 Short circuit withstand time as a function of gate-emitter voltage t sc = f(V GE) T1, T2 Typical short circuit collector current as a function of gate-emitter voltage V GE = f(Q GE) tsc (µS) IC (sc) 17,5 400 375 350 15 325 300 12,5 275 250 10 225 200 175 7,5 150 125 5 100 75 2,5 50 25 0 0 12 At V CE = Tj ≤ 13 14 15 600 V 150 ºC copyright Vincotech 16 17 18 19 V GE (V) 20 12 At V CE ≤ Tj = 11 13 14 600 V 25 ºC 15 16 17 V GE (V) 18 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Boost Switch T1,T2 / Boost Diode D3,D4 Figure 29 T1, T2 Reverse bias safe operating area I C = f(V CE) IC (A) 120 IC MAX Ic CHIP 100 Ic MODULE 80 VCE MAX 60 40 20 0 0 200 400 600 800 1000 1200 1400 V CE (V) At T vj ≤ I C MAX= V CE 150 100 MAX= 1200 copyright Vincotech ºC A V 12 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Bypass Diode D5,D6 / Boost Sw. Protection Diode D1,D2 Figure 1 D1,D2,D5,D6 Figure 2 D1,D2,D5,D6 Typical diode forward current as Diode transient thermal impedance a function of forward voltage I F= f(V F) as a function of pulse width Z th(j-s) = f(t p) 101 Zth(j-s) (K/W) IF (A) 75 60 100 45 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 30 10-1 15 0 0 0,4 At Tj = tp = 0,8 25/125 250 1,2 1,6 V F (V) 10-2 2 10-5 10-4 At D = °C µs 10-3 D1,D2,D5,D6 10-1 100 101 Thermal grease R th(j-s) = 1,73 Figure 4 Power dissipation as a function of heatsink temperature P tot = f(T s) t p (s) tp/T phase-change material R th(j-s) = 1,49 K/W Figure 3 10-2 K/W D1,D2,D5,D6 Forward current as a function of heatsink temperature I F = f(T s) 50 Ptot (W) IF (A) 120 45 100 40 35 80 30 60 25 20 40 15 10 20 5 0 0 0 At Tj = 50 150 copyright Vincotech 100 150 T h ( o C) 200 0 At Tj = ºC 13 50 150 100 150 T s ( o C) 200 ºC 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Thermistor Figure 1 Thermistor Typical NTC characteristic as a function of temperature RT = f(T) NTC-typical temperature characteristic R (Ω) 24000 20000 16000 12000 8000 4000 0 25 copyright Vincotech 50 75 100 T (°C) 125 14 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Switching Definitions Boost General conditions Tj = 125 °C = 4Ω R gon R goff = 4Ω Figure 1 T1, T2 Turn-off Switching Waveforms & definition of t doff, t Eoff Figure 2 T1, T2 Turn-on Switching Waveforms & definition of t don, t Eon (t E off = integrating time for E off) (t E on = integrating time for E on) 125 % 150 % tdoff VCE VCE 90% VGE 90% IC 125 100 100 VCE 75 VGE VGE 75 IC 50 tdon tEoff 50 25 IC 1% 25 VGE 10% 0 VCE 3% IC 10% 0 tEon -25 -0,15 -0,05 0,05 V GE (0%) = V GE (100%) = V C (100%) = I C (100%) = 0 15 700 t doff = t E off = 0,15 0,25 0,35 -25 2,95 0,45 0,55 time (us) 3,05 3,1 V V V V GE (0%) = V GE (100%) = V C (100%) = 40 A I C (100%) = 40 A 0,320 0,468 µs µs t don = t E on = 0,027 0,157 µs µs Figure 3 Turn-off Switching Waveforms & definition of t f T1, T2 3,2 T1, T2 IC VCE IC time(us) V V V 150 % fitted % 0 15 700 3,15 Figure 4 Turn-on Switching Waveforms & definition of t r 125 100 3 125 IC 90% VCE 100 75 IC 90% IC 60% 75 tr 50 IC 40% 50 25 25 IC10% -25 0,15 IC 10% tf 0 0,2 0 0,3 V C (100%) = I C (100%) = 700 40 V A V C (100%) = I C (100%) = 700 40 V A tf = 0,057 µs tr = 0,017 µs copyright Vincotech 0,35 0,4 -25 2,95 0,25 0,45 time (us) 15 3 3,05 3,1 time(us) 3,15 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Switching Definitions Boost Figure 5 Turn-off Switching Waveforms & definition of t Eoff T1, T2 Figure 6 Turn-on Switching Waveforms & definition of t Eon 125 T1, T2 125 % % Eoff 100 Eon Pon 100 Poff 75 75 50 50 25 25 IC 1% VGE 90% VGE 10% 0 VCE 3% 0 tEon tEoff -25 -0,1 0 P off (100%) = E off (100%) = t E off = 0,1 0,2 28,02 2,43 0,468 0,3 0,4 0,5 -25 2,95 0,6 time (us) kW mJ µs P on (100%) = E on (100%) = t E on = Figure 7 Turn-off Switching Waveforms & definition of t rr 3 3,05 28,02 1,22 0,1567 3,1 3,15 3,2 time(us) 3,25 kW mJ µs T1, T2 125 % Id 100 75 trr 50 25 0 fitted Vd IRRM 10% -25 IRRM 90% IRRM 100% -50 -75 3,02 3,03 V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 3,04 700 40 -15 0,009 3,05 3,06 3,07 time(us) 3,08 V A A µs 16 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Switching Definitions Boost Figure 8 Turn-on Switching Waveforms & definition of t Qrr (t Q rr = integrating time for Q rr) D3, D4 Figure 9 D3, D4 Turn-on Switching Waveforms & definition of t Erec (t Erec= integrating time for E rec) 200 200 % % Erec Qrr 150 150 Id 100 100 tErec tQrr 50 50 0 0 Prec -50 3 3,02 I d (100%) = Q rr (100%) = t Q rr = copyright Vincotech 3,04 40 0,21 0,02 3,06 3,08 time(us) -50 3,03 3,1 A µC µs P rec (100%) = E rec (100%) = t E rec = 17 3,04 3,05 28,02 0,07 0,02 3,06 time(us) 3,07 kW mJ µs 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code without thermal paste 12mm housing solder pins V23990-P629-L43-PM with thermal paste 12mm housing solder pins without thermal paste 12mm housing Press-fit pins V23990-P629-L43-/3/-PM V23990-P629-L43Y-PM Vinco Date code Name & Ver UL Lot Serial Vinco WWYY TTTTTTTVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Text Datamatrix Outline Pin table Pin table Pin X Y Function Pin X Y 1 0 22,5 G1 20 0 0 G2 2 2,9 22,5 S1 21 0 8 NTC1 3 8,3 22,5 DC- 22 0 14,5 NTC2 4 10,8 22,5 DC- 5 19,6 22,5 DC+ 6 22,1 22,5 DC+ 7 29,1 22,5 Sol1 8 32 22,5 Sol1 Boost1 9 33,5 17,8 10 33,5 15,3 Boost1 11 33,5 7,2 Boost2 12 33,5 4,7 Boost2 13 32 0 Sol2 14 29,1 0 Sol2 15 22,1 0 DC+ 16 19,6 0 DC+ 17 10,8 0 DC- 18 8,3 0 DC- 19 2,9 0 S2 Function Pinout Identification ID Component Voltage Current Function T1,T2 IGBT 1200 V 50 A Boost Switch D3,D4 FWD 1200 V 15 A Boost Diode D1,D2 FWD 1600 V 25 A Boost Sw. Protection Diode D5,D6 FWD 1600 V 25 A Bypass Diode R1 NTC copyright Vincotech Comment Thermistor 18 01 Dec. 2015 / Revision 5 V23990-P629-L43-PM V23990-P629-L43Y-PM datasheet Packaging instruction Standard packaging quantity (SPQ) >SPQ 135 Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. Document No.: Date: Modification: V23990-P629-L43x-D5-14 01 Dec. 2015 Added Press-fit version Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 19 01 Dec. 2015 / Revision 5