A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet VINcoDUAL E3 1200 V / 690 A Features VINco E3 ● Low VC Esat with the new 7th gen Mitsubishi chip generation ● Max. Junction temperature Tvjmax 175 °C ● Solid cover technology for higher reliability ● Industry standard housing ● Press-fit pin and pre-applied Phase Change Thermal Interface Material available Schematic Target applications ● Industrial Drives ● Power Supply ● UPS Types ● A0-VS122PA690M7-L750F70 ● A0-VP122PA690M7-L750F70T Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 678 A 1380 A 2065 W Half-Bridge Switch Collector-emitter voltage Collector current VCES IC Tj = Tjmax Ts = 80 °C Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES ±20 V Maximum junction temperature Tjmax 175 °C Copyright Vincotech Ts = 80 °C 1 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 546 A 1500 A 896 W Half-Bridge Diode Peak repetitive reverse voltage Continuous (direct) forward current VRRM IF Tj = Tjmax Ts = 80 °C Repetitive peak forward current IFRM Total power dissipation Ptot Maximum junction temperature Tjmax 175 °C Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Tjop -40…(Tjmax - 25) °C 4000 V Creepage distance 18,1 mm Clearance 16,2 mm Tj = Tjmax Ts = 80 °C Module Properties Thermal Properties Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech Visol DC Test Voltage CTI tp = 2 s > 200 2 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Unit Min Typ Max 5,4 6 6,6 25 1,54 1,9 125 1,74 150 1,80 Half-Bridge Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE = VCE 0,069 15 690 25 V V Collector-emitter cut-off current ICES 0 1200 25 690 µA Gate-emitter leakage current IGES 20 0 25 1500 nA Internal gate resistance rg 0,66 Input capacitance Cies 132000 Output capacitance Coes Reverse transfer capacitance Cres Gate charge Qg 0 10 25 3900 Ω pF 1590 15 600 690 25 4500 nC 0,046 K/W 0,029 K/W Thermal Thermal resistance junction to case Rth(j-c) Thermal resistance case to sink Rth(c-s) phase-change material λ = 3,4 W/mK Dynamic Turn-on delay time Rise time td(on) tr Rgoff = 2 Ω Rgon = 2 Ω Turn-off delay time td(off) ±15 Fall time Turn-on energy (per pulse) Turn-off energy (per pulse) Copyright Vincotech tf Eon QrFWD = 54,8 µC QrFWD = 88,9 µC QrFWD = 94,6 µC Eoff 3 600 685 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 752 768 758 122 144 141 524 557 574 57 89 88 89,877 122,444 125,037 48,689 70,087 64,737 ns mWs 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Min Unit Typ Max 1,70 1,87 2,2 Half-Bridge Diode Static Forward voltage VF Reverse leakage current IR 750 1200 25 125 25 450 V µA Thermal Thermal resistance junction to case Rth(j-c) Thermal resistance case to sink Rth(c-s) phase-change material λ = 3,4 W/mK 0,070 K/W 0,036 K/W Dynamic Peak recovery current IRRM Reverse recovery time trr Recovered charge Qr Reverse recovered energy Erec Peak rate of fall of recovery current di/dt = 5557 A/µs di/dt = 4738 A/µs ±15 di/dt = 6750 A/µs (dirf/dt)max 600 685 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 317 344 358 368 517 541 54,754 88,890 94,624 18,371 31,246 29,901 1157 1025 938 25 5 A ns µC mWs A/µs Thermistor Rated resistance R Deviation of R100 ΔR/R Power dissipation R100 = 493 Ω 100 P Power dissipation constant -5 kΩ +5 % 25 245 mW 25 1,4 mW/K B-value B(25/50) Tol. ±2 % 25 3375 K B-value B(25/100) Tol. ±2 % 25 3437 K Vincotech NTC Reference Copyright Vincotech K 4 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Half-Bridge Switch Characteristics figure 1. IGBT figure 2. IGBT Typical output charact erist ics Typical out put characteristics I C = f(V CE) I C = f(V CE) 2500 I C (A) I C (A) 2500 VGE : 7V 8V 9V 2000 2000 10 V 11 V 12 V 13 V 14 V 15 V 1500 1500 16 V 17 V 1000 1000 500 500 0 0 0 1 2 3 4 0 5 1 2 tp = 250 µs V GE = 15 V 25 T j: 3 4 5 V C E (V) V C E (V) °C tp = 250 125 °C Tj = 125 µs 150 °C V GE from 7 V to 17 V in steps of 1 V °C Half-Bridge Diode Characteristics figure 1. FWD Typical f orward characteristics I F = f(V F) IF (A) 700 600 500 400 300 200 100 0 0 0,5 1 1,5 2 2,5 3 VF (V) tp = 250 µs T j: 25 °C 125 °C 150 °C Copyright Vincotech 5 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 5000 4000 3000 2000 1000 0 25 50 75 100 125 T (°C) Copyright Vincotech 6 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Switching Characteristics figure 1. IGBT figure 2. IGBT Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(R g) 400 E (mWs) E ( mWs) 400 Eon Eon 300 300 Eon Eon Eo n Eo n 200 200 Eoff Eoff 100 100 E o ff 0 Eoff Eoff Eo ff 0 0 200 400 600 800 1000 1200 1400 0 I C (A) 25 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 2 Ω R goff = 2 Ω T j: °C 1 2 3 4 125 °C 150 °C figure 3. FWD V GE = ±15 V IC = 685 A 5 T j: 7 8 FWD E rec = f(I c) E rec = f(R g) E (mWs) Erec Erec 9 125 °C figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or 40 R g ( Ω) °C 150 °C Typical reverse recovered energy loss as a f unct ion of collect or current E ( mWs) 6 25 With an inductive load at 600 V V CE = 50 40 30 Erec 30 20 20 Erec 10 Erec 10 Erec 0 0 0 200 400 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 2 Ω Copyright Vincotech 600 800 1000 T j: 125 °C 25 1200 0 1400 I C (A) °C 1 2 3 With an inductive load at 600 V V CE = 150 °C 7 V GE = ±15 V IC= 685 A 4 5 6 T j: 125 °C 25 7 8 r g (Ω) 9 °C 150 °C 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Switching Characteristics figure 5. IGBT figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(R g) 10 1 t ( μs) t ( μ s) td(on) td(off ) td(on) tr td(off ) 1 tr 0,1 tf 0,1 tf 0,01 0,01 0 200 400 600 800 1000 1200 1400 0 I C (A) (A) With an inductive load at 150 °C Tj= 1 2 3 V CE = 600 V V CE = 600 V V GE = ±15 V V GE = ±15 V IC = 685 A R gon = 2 Ω R goff = 2 Ω 4 5 6 7 8 9 r g (Ω) With an inductive load at 150 °C Tj = figure 7. FWD figure 8. FWD t rr = f(I C) t rr = f(R gon) 0,8 0,8 t rr (μs) Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr (μs) Typical reverse recovery t ime as a f unct ion of collect or current trr trr 0,6 trr trr 0,6 trr trr 0,4 0,4 0,2 0,2 0 0 0 200 400 600 800 1000 1200 1400 0 I C (A) At 600 V V GE = ±15 V R gon = 2 Ω V CE= Copyright Vincotech 25 T j: 1 2 3 4 5 6 7 8 9 R g on (Ω) 600 V 125 °C °C V GE = ±15 V 150 °C IC= 685 A At 8 V CE = 25 T j: °C 125 °C 150 °C 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Switching Characteristics figure 9. FWD figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 150 Q r (µC) Q r (μ C) 120 120 Qr Qr 90 Qr 60 90 Qr Qr 60 Qr 30 30 At 0 0 0 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 6 7 T j: 125 °C 8 I C (A) 600 V V GE = ±15 V R gon = 2 Ω At V CE = 25 T j: 600 V 125 °C °C V GE = ±15 V 150 °C I C= 685 A At figure 11. FWD VCE= 25 °C 150 °C figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 400 I R M (A) I R M (A) 800 IR M I RM IRM 300 600 200 400 100 200 IRM IRM I RM 0 0 0 At 9 R g o n (Ω) 200 400 600 V V GE = ±15 V R gon = 2 Ω V CE = Copyright Vincotech 600 800 1000 25 T j: 1200 I C (A) 0 1400 1 2 3 4 5 6 7 8 9 R g o n (Ω) °C At V CE = 600 V 125 °C V GE = ±15 V 150 °C IC= 685 A 9 25 T j: °C 125 °C 150 °C 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Switching Characteristics figure 13. FWD figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 16000 d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 8000 diF / dt dir r/dt diF / dt di r r/ dt 6000 12000 4000 8000 2000 4000 0 0 0 200 400 600 800 1000 1200 0 1400 1 2 3 4 5 6 7 I C (A) 600 V V GE = ±15 V R gon = 2 Ω At V CE = 25 T j: 600 V 125 °C °C V GE = ±15 V 150 °C I C= 685 A At figure 15. V CE = 25 T j: 8 9 R g o n (Ω) °C 125 °C 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 1600 I C MAX I c CHIP 1400 1200 MODULE 1000 Ic 800 600 V CE MAX 400 200 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 2 Ω R goff = 2 Ω Tj = Copyright Vincotech 10 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Switching Characteristics General conditions = 125 °C = 2Ω Tj R gon = R goff figure 1. IGBT 2Ω figure 2. Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 150 200 % % tdoff 100 VCE IC VGE 90% 150 IC VCE 90% VCE 100 VGE 50 VGE tEoff tdon 50 IC 1% VGE 10% 0 VCE 3% IC 10% 0 tEon -50 -0,1 -50 0,2 0,5 0,8 1,1 1,4 1,7 6,7 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 686 A t doff = t Eoff = 0,557 1,236 µs µs V GE (0%) = 7,1 figure 3. IGBT 7,5 7,9 -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 686 A t don = t Eon = 0,768 1,515 µs µs V GE (0%) = 8,3 figure 4. Turn-of f Swit ching Wavef orms & def init ion of tf 8,7 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 150 175 % % 150 125 fitted IC 125 100 VCE IC 90% 100 75 IC 90% IC 60% 75 tr 50 IC 40% 50 25 VCE 25 IC10% IC tf 0 IC 10% 0 -25 0,4 0,6 0,8 1 -25 7,64 1,2 t (µs) 7,72 7,8 7,88 7,96 600 V V C (100%) = 600 V I C (100%) = 686 A I C (100%) = 686 A tf= 0,089 µs tr = 0,144 µs Copyright Vincotech 8,04 8,12 8,2 t (µs) V C (100%) = 11 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Switching Characteristics figure 5. IGBT figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 125 % Poff % IC 1% 100 Eon Pon 100 Eoff 75 75 50 50 25 25 VGE 90% VCE 3% VGE 10% 0 0 tEon tEoff -25 -25 0 0,4 0,8 1,2 6,8 1,6 7,2 7,6 8 P off (100%) = 411,59 kW P on (100%) = 411,59 E off (100%) = 70,09 mJ E on (100%) = 122,44 mJ t Eoff = 1,24 µs t Eon = 1,52 µs figure 7. 8,4 8,8 t ( µs) t (µs) kW FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % IF 100 trr 50 fitted VF 0 IRRM 10% IRRM 90% IRRM 100% -50 -100 -150 7,6 7,8 8 8,2 8,4 8,6 t (µs) V F (100%) = 600 I F (100%) = 686 A I RRM (100%) = -344 A t rr = 0,517 µs Copyright Vincotech V 12 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Switching Characteristics figure 8. FWD figure 9. Turn-on Swit ching Wavef orms & def init ion of t Qr (t Qr = int egrat ing t ime f or Qr) FWD Turn-on Swit ching Wavef orms & def init ion of t Erec (t Erec = int egrating t ime f or Erec ) 125 150 % % IF Erec Qr 100 100 75 tQr 50 tErec 50 0 25 Prec -50 0 -100 7,7 8 8,3 8,6 8,9 -25 9,2 7,7 t (µs) 8 8,3 8,6 9,2 t (µs) I F (100%) = 686 A P rec (100%) = 411,59 kW Q r (100%) = 88,89 µC E rec (100%) = 31,25 mJ t Qr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 8,9 13 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Ordering Code & Marking Version Ordering Code A0-VS122PA690M7-L750F70 A0-VS122PA690M7-L750F70-/3/ A0-VP122PA690M7-L750F70T A0-VP122PA690M7-L750F70T-/3/ without thermal paste solder pins with thermal paste solder pins without thermal paste Press-fit pins with thermal paste Press-fit pins NN-NNNNNNNNNNNN-TTTTTTTVV VIN WWYY LLLLL SSSS Text Datamatrix Name VIN Date code Lot Serial NN-NNNNNNNNNNNN-TTTTTTVV VIN WWYY LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 7,24 -0,45 Therm1 2 11,06 -0,45 Therm2 3 60,58 -0,45 G12 4 64,4 -0,45 S12 5 87,26 -0,45 C12 6 - - Ph 7 - - Ph 8 37,72 57,95 G11 9 33,92 57,95 S11 10 11 - - DCDC+ Copyright Vincotech 14 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Pinout Identification ID Component Voltage Current Function T11, T12 IGBT 1200 V 690 A Half-Bridge Switch D11, D12 FWD 1200 V 750 A Half-Bridge Diode Rt Thermistor Copyright Vincotech Comment Thermistor 15 03 Jun. 2016 / Revision 1 A0-VS122PA690M7-L750F70 A0-VP122PA690M7-L750F70T datasheet Packaging instruction Standard packaging quantity (SPQ) 24 >SPQ Document No.: Date: A0-Vx122PA690M7-L750F70x-D1-14 03 Jun. 2016 Standard Modification: <SPQ Sample Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 03 Jun. 2016 / Revision 1