10-PZ12NMA080SH23-M260F03Y datasheet flow MNPC 0 1200 V / 80 A Features ● ● ● ● ● flow 0 12mm housing mixed voltage component topology neutral point clamped inverter reactive power capability low inductance layout improved LVRT Schematic Target applications ● Solar inverter ● UPS Types ● 10-PZ12NMA080SH23-M260F03Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 67 A 240 A 153 W Half Bridge Switch Collector-emitter break down voltage DC collector current V CES IC T j=T jmax Pulsed collector current I CRM t p limited by T jmax Power dissipation P tot T j=T jmax Gate-emitter peak voltage V GE Short circuit ratings Maximum Junction Temperature Copyright Vincotech T h=80°C T h=80°C ±20 V t SC Tj≤ 150°C 10 µs V CC VGE= 15V 800 V 175 °C T jmax 1 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Parameter Conditions Symbol Value Unit 1200 V 46 A 100 A 74 W 175 °C Value Unit 600 V 49 A 225 A 68 W ±20 V Half Bridge Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j=T jmax T h =80°C T j=T jmax T h=80°C Symbol Condition Neutral Point Switch Collector-emitter break down voltage DC collector current V CES IC T j=T jmax T h=80°C Pulsed collector current I CRM t p limited by T jmax Power dissipation P tot T j=T jmax Gate-emitter peak voltage V GE Short circuit ratings Maximum Junction Temperature Parameter T h=80°C t SC Tj≤ 150°C 6 µs V CC VGE= 15V 360 V 175 °C Value Unit 650 V 49 A 150 A 59 W 175 °C T jmax Conditions Symbol Neutral Point Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Copyright Vincotech T j = T jmax T j = T jmax 2 T h = 80°C T h = 80°C 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Parameter Conditions Symbol Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 8,95 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 3 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Characteristic Values Half Bridge Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] Unit T j[ °C] Min Typ Max 25 5,3 5,8 6,3 1,7 1,99 2,4 Static Gate emitter threshold voltage V GE(th) VG E =VC E 0,003 125 25 Collec tor-emitter saturation voltage 15 V CEsat 80 Collec tor-emitter cut-off I CES 0 1200 Gate-emitter leakage current I GES 20 0 Integrated Gate resistor R gint Input capacitance C ies 2,33 150 2,41 25 V 10 125 25 240 125 none µA nA Ω 4660 f = 1MHz Reverse transfer c apac itanc e 125 V 0 25 25 pF 260 C rss Thermal Thermal resistanc e c hip to heatsink R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 0,62 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 4 Ω R gon = 4 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 2,1 µC Q rFWD = 3,8 µC 4 350 50 25 125 25 125 25 125 25 125 25 125 25 125 77 79 11 14 180 242 48 76 0,524 0,980 1,314 2,275 ns mWs 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Characteristic Values Neutral Point Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,53 1,77 125 1,49 150 1,47 Static Forward voltage Reverse leakage current 75 VF 25 650 Ir V 3,8 150 - µA Thermal Thermal resistanc e junction to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 1,61 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech Qr di /dt = 5245 A/µs ±15 di /dt = 3680 A/µs E rec (di rf/dt )max 5 350 50 25 125 25 125 25 125 25 125 25 125 63 73 52 92 2,059 3,800 0,474 0,845 1198 852 A ns µC mWs A/µs 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Characteristic Values Neutral Point Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] Unit T j[ °C] Min Typ Max 25 5 5,8 6,5 1,45 1,85 Static Gate emitter threshold voltage V GE(th) VG E =VC E 0,0012 125 25 Collec tor-emitter saturation voltage Collec tor-emitter cut-off 15 V CEsat 0 I CES 1,05 125 1,59 150 1,64 25 600 3,8 25 Integrated Gate resistor R gint none Input capacitance C ies 4620 Output capacitance C oss Reverse transfer c apac itanc e C rss 0 0 600 I GES f=1 MHz V 125 Gate-emitter leakage current Gate c harge 20 75 125 25 25 288 V µA nA Ω pF 137 15 QG 480 75 25 470 nC 1,40 K/W Thermal Thermal resistanc e c hip to heatsink R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK IGBT Switching Turn-on delay time Rise time Turn-off delay time 25 t d(on) tr R goff = 4 Ω R gon = 4 Ω ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech 85 25 11 125 t d(off) 350 55 84 125 12 25 177 125 205 25 125 87 105 Q rFWD = 5,3 µC 25 Q rFWD = 8,2 µC 125 0,747 25 1,860 125 2,500 6 ns 0,528 mWs 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Characteristic Values Half Bridge Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,73 2,05 125 1,70 150 1,68 Static Forward voltage Reverse leakage current 50 VF 25 1200 Ir V 10 150 µA Thermal Thermal resistanc e junction to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 1,29 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr 25 106 125 118 25 102 125 di /dt = 6090 A/µs ±15 di /dt = 5325 A/µs 350 55 E rec (di rf/dt )max A ns 148 25 5,316 125 8,219 25 1,551 125 2,418 25 6904 125 4951 µC mWs A/µs Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 22 -12 kΩ +12 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 7 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 250 IC(A) IC (A) 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VCE (V) VCE (V) tp = 250 µs V GE= 15 V T j: 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient thermal impedance as a function of pulse width I C = f(V CE) IGBT Z thJH = f(t p) 1 ZthJH (K/W) IC (A) 80 70 60 50 0,1 40 30 0,5 0,2 0,1 20 0,05 0,02 0,01 10 0,005 0 0,01 1,00E-04 0 0 2 4 6 8 10 12 1,00E-03 1,00E-02 1,00E-01 tp = 100 µs 10 V T j: 25 °C D = 125 °C R thJH = 150 °C Copyright Vincotech 1,00E+01 1,00E+02 tp(s) VCE (V) V CE = 1,00E+00 tp / T 0,6 K/W IGBT thermal model values 8 R (K/W) Tau (s) 1,00E-01 1,75E+00 3,00E-01 2,50E-01 1,60E-01 6,33E-02 3,61E-02 6,32E-03 2,47E-02 3,87E-04 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Gate voltage vs Gate charge IGBT V GE = f(Q g) VGE (V) 16 240V 14 960V 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450 Qg (nC) At I C= 80 A IGBT Short circuit withstand time as a function of VGE Typical short circuit collector current as a function of VGE t sc = f(V GE) I SC = f(V GE) 700 IC (sc) 45 tsc (µS) IGBT 40 600 35 500 30 400 25 20 300 15 200 10 100 5 0 0 10 12 14 16 18 12 20 13 14 VGE(V) 16 17 18 VGE(V) At V CE = 600 V At V CE ≤ 600 V Tj ≤ 150 ºC Tj ≤ 25 ºC Copyright Vincotech 15 9 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 250 Z t h(j h(j--s) (K/W) IF (A) 101 200 100 150 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,61 K/W 150 °C FWD thermal model values Copyright Vincotech 10 R (K/W) 9,80E-02 τ (s) 5,80E+00 3,03E-01 8,55E-01 6,51E-01 1,83E-01 3,18E-01 4,73E-02 1,83E-01 1,14E-02 5,88E-02 1,69E-03 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switch Characteristics Typical output characteristics IGBT I C = f(V CE) Typical output characteristics IGBT I C = f(V CE) 250 IC(A) IC (A) 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 0,5 1 1,5 2 2,5 3 3,5 4 4,5 tp = 250 µs V GE= 15 V T j: 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics 5 VCE (V) VCE (V) IGBT I C = f(V CE) µs °C Transient thermal impedance as a function of pulse width IGBT Z thJH = f(t p) 10 ZthJH (K/W) IC (A) 75 60 1 45 30 0,5 0,1 0,2 0,1 0,05 15 0,02 0,01 0,005 0 0,01 1,00E-04 0 0 2 4 6 8 10 12 1,00E-03 1,00E-02 1,00E-01 tp = 100 µs 10 V T j: 25 °C D = 125 °C R thJH = 150 °C Copyright Vincotech 1,00E+01 1,00E+02 tp(s) VCE (V) V CE = 1,00E+00 tp / T 1,40 K/W IGBT thermal model values 11 R (K/W) Tau (s) 8,57E-02 4,79E+00 2,12E-01 8,67E-01 6,54E-01 1,48E-01 2,51E-01 4,86E-02 9,58E-02 9,17E-03 6,26E-02 6,32E-04 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Gate voltage vs Gate charge IGBT V GE = f(Q g) VGE (V) 15 120V 480V 12,5 10 7,5 5 2,5 0 0 50 100 150 200 250 300 350 400 450 500 Qg (nC) At I C= 75 A IGBT Short circuit withstand time as a function of VGE t sc = f(V GE) IGBT Typical short circuit collector current as a function of VGE I SC = f(V GE) 1400 IC (sc) tsc (µS) 14 12 1200 10 1000 8 800 6 600 4 400 2 200 0 0 10 11 12 13 14 12 15 13 14 15 VGE(V) 17 18 19 20 VGE(V) At V CE = 600 V At V CE ≤ 600 V Tj ≤ 175 ºC Tj ≤ 175 ºC Copyright Vincotech 16 12 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 150 Z t h(j h(j--s) (K/W) IF (A) 101 120 100 90 60 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 30 0 10-2 0 1 2 3 4 5 10-4 10-3 10-2 VF (V) tp = 250 µs 10-1 100 101 102 t p (s) 25 °C T j: 125 °C D= tp / T 150 °C R th(j-s) = 1,29 K/W FWD thermal model values R (K/W) 7,18E-02 τ (s) 3,30E+00 3,55E-01 2,92E-01 6,00E-01 6,90E-02 1,46E-01 1,13E-02 5,33E-02 1,66E-03 6,20E-02 2,38E-04 Thermistor Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 13 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) 4 2,5 E (mWs) E ( mWs) Typical swit ching energy losses as a f unct ion of collect or current Eoff Eoff 2 3 Eon Eon 1,5 E off Eo ff 2 Eon 1 E on 1 0,5 0 0 0 20 40 60 80 100 0 I C (A) 25 °C With an inductive load at 350 V V CE = V GE = ±15 V R gon = 4 Ω R goff = 4 Ω T j: 4 8 12 125 °C 150 °C V GE = IC = Figure 3. FWD ±15 V 50 A Figure 4. FWD E rec = f(I c) E rec = f(r g ) E ( mWs) 20 150 °C Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) R g ( Ω) 125 °C T j: Typical reverse recovered energy loss as a f unct ion of collect or current 1,6 16 25 °C With an inductive load at 350 V V CE = 1,2 Erec 1,2 0,9 0,8 0,6 Erec Erec Erec 0,3 0,4 -1,33E-15 0 0 20 40 With an inductive load at 350 V V CE = V GE = ±15 V R gon = 4 Ω Copyright Vincotech 60 80 I C (A) 0 100 25 °C T j: 4 8 With an inductive load at 350 V V CE = 125 °C 150 °C V GE = IC= 14 ±15 V 50 A 12 16 r g (Ω) 20 25 °C T j: 125 °C 150 °C 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) td(on) td(on) 0,1 0,1 tf tf tr tr 0,01 0,01 0,001 0,001 0 20 40 60 80 100 0 I C (A) (A) With an inductive load at 125 °C Tj= 4 8 V CE = 350 V V CE = 350 V V GE = ±15 V V GE = ±15 V IC = 50 A R gon = 4 Ω R goff = 4 Ω 12 16 r g (Ω) 20 With an inductive load at 125 °C Tj = Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,12 0,16 t rr (μs) t rr (μs) trr trr 0,09 0,12 trr 0,06 0,08 0,03 0,04 0 0 0 20 40 60 80 100 0 I C (A) At trr 350 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 8 12 16 20 R g o n (Ω) 25 °C T j: 4 At V CE = 125 °C V GE = 150 °C IC= 15 350 V ±15 V 50 A 25 °C T j: 125 °C 150 °C 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unct ion of collect or current Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) Q r (µC) Q r (μC) 6 Qr 4,5 4 Qr 3 Qr 3 2 Qr 1,5 1 0 At 0 0 20 40 60 80 100 0 4 8 12 16 20 R g on (Ω) I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V ±15 V 50 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 100 I R M (A) I R M (A) 100 I RM 80 80 I RM 60 60 40 40 I RM IRM 20 20 0 0 0 At 20 40 350 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 60 80 I C (A) 0 100 T j: 4 8 12 16 20 R go n (Ω) 25 °C At V CE = 125 °C V GE = 150 °C IC= 16 350 V ±15 V 50 A 25 °C T j: 125 °C 150 °C 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 6000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt di r r /dt 5000 6000 di F / dt di r r/ dt 5000 4000 4000 3000 3000 2000 2000 1000 1000 0 0 0 20 40 60 80 0 100 4 8 I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V ±15 V 50 A 12 16 20 R g o n (Ω) IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 180 I C MAX 160 I c CHIP 140 120 MODULE 100 80 Ic 60 V CE MAX 40 20 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 17 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switching Characteristics General conditions = 125 °C = 4Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 4Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 125 250 tdoff % IC % VCE 100 200 VGE 90% VCE 90% 75 150 VGE IC 50 100 VCE tEoff VGE tdon 25 50 IC 1% 0 VGE 10% 0 VCE 3% IC 10% tEon -25 -0,2 -0,05 0,1 0,25 0,4 0,55 -50 2,95 0,7 t (µs) 3 3,05 3,1 V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 700 V V C (100%) = 700 V I C (100%) = 50 A I C (100%) = 50 A t doff = 0,242 µs t don = 0,079 µs t Eoff = Figure 3. 0,615 µs t Eon = Figure 4. 0,214 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,15 3,2 3,25 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 250 % fitted IC % VCE 100 IC 200 IC 90% 75 150 IC 60% VCE 50 100 IC 90% tr IC 40% 25 50 IC10% 0 tf IC 10% 0 -25 0 0,1 0,2 0,3 0,4 0,5 -50 3,05 0,6 t (µs) 3,07 3,09 3,11 3,13 3,17 3,19 t (µs) V C (100%) = 700 V V C (100%) = 700 V I C (100%) = 50 A I C (100%) = 50 A tf= 0,076 µs tr = 0,014 µs Copyright Vincotech 3,15 18 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switching Characteristics Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 125 % Poff 100 % IC 1% 75 75 50 50 25 Eon Pon 100 Eoff 25 VGE 90% VCE 3% VGE 10% 0 0 tEoff tEon -25 -25 -0,2 -0,05 0,1 0,25 0,4 0,55 0,7 2,9 3 3,1 3,2 P off (100%) = 35,05 kW P on (100%) = 35,05 kW E off (100%) = 2,28 mJ E on (100%) = 0,98 mJ t Eoff = 0,615 µs t Eon = 0,214 µs Figure 7. 3,3 3,4 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 % Id 100 trr 50 0 IRRM 10% Vd -50 fitted -100 -150 3,05 IRRM 90% IRRM 100% 3,1 3,15 3,2 3,25 t (µs) V d (100%) = 700 V I d (100%) = 50 A I RRM (100%) = -73 A t rr = 0,092 µs Copyright Vincotech 19 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Half Bridge Switching Characteristics Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Qrr 100 100 50 Erec tErec 75 tQrr 0 50 -50 25 -100 0 Prec -150 3 3,08 3,16 3,24 3,32 -25 3,4 3 t (µs) 3,1 3,2 3,4 t (µs) I d (100%) = 50 A P rec (100%) = 35,05 kW Q rr (100%) = 3,80 µC E rec (100%) = 0,85 mJ t Qrr = 0,197 µs t Erec = 0,197 µs Copyright Vincotech 3,3 20 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) 4 E (mWs) E ( mWs) Typical swit ching energy losses as a f unct ion of collect or current 3 Eoff 2,5 Eoff Eon 3 Eo n 2 E o ff Eo ff 2 1,5 1 Eon 1 Eo n 0,5 0 0 0 20 40 60 80 100 0 I C (A) 25 °C With an inductive load at 350 V V CE = V GE = ±15 V R gon = 4 Ω R goff = 4 Ω T j: 2 4 6 8 125 °C 150 °C V GE = IC = Figure 3. FWD ±15 V 55 A 10 T j: 16 R g ( Ω) FWD E rec = f(I c) E rec = f(r g ) E ( mWs) 3 Erec 2,5 3 18 125 °C Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) 14 150 °C Typical reverse recovered energy loss as a f unct ion of collect or current 4 12 25 °C With an inductive load at 350 V V CE = Erec 2 1,5 2 Erec Erec 1 1 0,5 0 0 0 20 40 With an inductive load at 350 V V CE = V GE = ±15 V R gon = 4 Ω Copyright Vincotech 60 80 I C (A) 0 100 25 °C T j: 2 4 6 With an inductive load at 350 V V CE = 125 °C 150 °C V GE = IC= 21 ±15 V 55 A 8 10 12 14 16 r g (Ω) 18 25 °C T j: 125 °C 150 °C 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(on) td(off ) 0,1 tf 0,1 tf td(on) tr tr 0,01 0,01 0,001 0,001 0 10 20 30 40 50 60 70 80 90 100 0 I C (A) (A) With an inductive load at 125 °C Tj= 2 4 6 8 10 12 14 16 r g (Ω) 18 With an inductive load at 125 °C Tj = V CE = 350 V V CE = 350 V V GE = ±15 V V GE = ±15 V R gon = 4 Ω IC = 55 A R goff = 4 Ω Figure 7. FWD Figure 8. FWD t rr = f(I C) t rr = f(R gon) 0,16 0,5 t rr (μs) Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr (μs) Typical reverse recovery t ime as a f unct ion of collect or current trr trr 0,4 0,12 trr 0,3 trr 0,08 0,2 0,04 0,1 0 0 0 10 20 30 40 50 60 70 80 90 100 0 I C (A) At 350 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 4 6 8 10 12 14 16 18 R g o n (Ω) 25 °C T j: 2 At V CE = 125 °C V GE = 150 °C IC= 22 350 V ±15 V 55 A 25 °C T j: 125 °C 150 °C 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 12 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current 12 Qr 9 Qr 9 6 6 Qr Qr 3 3 0 At 0 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 14 16 I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: VCE= At 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V ±15 V 55 A T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 160 18 R g on (Ω) 25 °C I R M (A) I R M (A) 160 I RM IRM 120 120 80 80 IRM IRM 40 40 0 0 0 At 20 40 350 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 60 80 I C (A) 0 100 4 6 8 10 12 14 16 18 R go n (Ω) 25 °C T j: 2 At V CE = 125 °C V GE = 150 °C IC= 23 350 V ±15 V 55 A 25 °C T j: 125 °C 150 °C 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 12000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 10000 di F / dt dir r/dt 8000 di F / dt di r r/ dt 9000 6000 6000 4000 3000 2000 0 0 0 10 20 30 40 50 60 70 80 90 0 100 5 10 I C (A) 350 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V ±15 V 55 A 15 20 R g o n (Ω) IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 180 I C MAX I c CHIP 160 140 120 MODULE 100 Ic 80 60 V CE MAX 40 20 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 24 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switching Characteristics General conditions = 125 °C = 4Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 4Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 125 350 IC % % 300 tdoff 100 VCE VCE 90% VGE 90% 250 75 200 IC 50 VGE 150 tEoff VGE VCE 100 25 tdon IC 1% 50 0 VCE 3% IC 10% VGE 10% 0 tEon -25 -0,1 0 0,1 0,2 0,3 0,4 0,5 -50 2,95 0,6 t (µs) 3 3,05 3,1 V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 56 A I C (100%) = 56 A t doff = 0,205 µs t don = 0,085 µs t Eoff = Figure 3. 0,582 µs t Eon = Figure 4. 0,157 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,15 3,2 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 350 fitted % VCE IC IC % 300 100 IC 90% 250 75 200 IC 60% 50 150 IC 40% VCE 100 25 IC 90% tr IC10% 0 50 tf IC 10% 0 -25 0 0,1 0,2 0,3 0,4 -50 0,5 3 t (µs) 3,05 3,1 3,2 t (µs) V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 56 A I C (100%) = 56 A tf= 0,105 µs tr = 0,012 µs Copyright Vincotech 3,15 25 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switching Characteristics Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 125 % % IC 1% Eoff Poff 100 75 75 50 50 25 Eon Pon 100 25 VGE 90% VCE 3% VGE 10% 0 0 tEon tEoff -25 -25 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 2,9 3 3,1 P off (100%) = 19,56 kW P on (100%) = 19,56 kW E off (100%) = 2,50 mJ E on (100%) = 0,75 mJ t Eoff = 0,58 µs t Eon = 0,16 µs Figure 7. 3,2 3,3 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 % Id 100 trr 50 fitted 0 IRRM 10% -50 Vd -100 -150 IRRM 90% IRRM 100% -200 -250 3 3,1 3,2 3,3 3,4 t (µs) V d (100%) = 350 V I d (100%) = 56 A I RRM (100%) = -118 A t rr = 0,148 µs Copyright Vincotech 26 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Neutral Point Switching Characteristics Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 150 % % Qrr Id 100 Erec 100 50 tErec 50 tQrr Prec 0 0 -50 -50 -100 -100 -150 3 3,2 3,4 3,6 3,8 4 -150 4,2 3 t (µs) 3,2 3,4 3,6 4 4,2 t (µs) I d (100%) = 56 A P rec (100%) = 19,56 kW Q rr (100%) = 8,22 µC E rec (100%) = 2,42 mJ t Qrr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 3,8 27 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Ordering Code & Marking Version without thermal paste with Press-fit pins Vinco WWYY NNNNNNNVV UL LLLLL SSSS Ordering Code 10-PZ12NMA080SH23-M260F03Y Text Datamatrix in DataMatrix as M260F03Y in packaging barcode as M260F03Y Vinco Date code Name&Ver UL Lot Serial Vinco WWYY NNNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table Pin X Y 1 33,6 0 2 30,8 0 3 22 0 4 19,2 0 5 10,1 0 6 2,8 0 7 0 0 8 0 7,1 9 0 9,9 10 0 12,7 11 0 15,5 12 0 22,6 13 2,8 22,6 14 10,1 22,6 15 19,2 22,6 16 22 22,6 17 30,8 22,6 18 33,6 22,6 19 33,6 14,8 20 33,6 8,2 Copyright Vincotech 28 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Pinout Identification ID Component Voltage Current Function T1,T2 IGBT 1200V 80A Half Bridge Switch D1,D2 FWD 1200V 50A Half Bridge Diode T3,T4 IGBT 600V 75A Neutral Point Switch D3,D4 FWD 650V 75A Neutral Point Diode T NTC - - Thermistor Copyright Vincotech 29 Comment 1 Jul. 2015 / Revision 1 10-PZ12NMA080SH23-M260F03Y datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Document No.: Date: 10-PZ12NMA080SH23-M260F03Y-D1-14 1 Jul. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 30 1 Jul. 2015 / Revision 1