V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet flow CON 0 1600 V / 100 A Features flow 0 17mm housing ● modular Input Rectifier & BRC-Circuit for 30kW Motor Drive ● 1 or 3 phase rectifier (optional half controlled) ● 3 phase rectifier with breake ● compatible with 3 x flow PHASE 0 Schematic Target applications ● Industrial Drives V23990-P590-J09 V23990-P600-I09 V23990-P590-J19 V23990-P600-I19 Types ● ● ● ● V23990-P600-I19-PM V23990-P590-J19-PM V23990-P600-I09-PM V23990-P590-J09-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 1200 V 66 A t p limited by T jmax 150 A Tj ≤ 125°C, VCE ≤ 1200 V 150 A 128 W ±20 V µs Brake Switch Collector-emitter voltage Collector current Repetitive peak collector current V CES IC I CRM Turn off safe operating area Total power dissipation P tot Gate-emitter voltage V GES Short circuit ratings Maximum Junction Temperature Copyright Vincotech T j = T jmax T j = T jmax T S =80 °C T S =80 °C t SC Tj ≤ 125°C 10 V CC VGE = 15V 900 V 150 °C T jmax 1 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Parameter Conditions Symbol Value Unit 1200 V 43 A 100 A 75 W 150 °C Value Unit 1200 V 15 A 15 A 32 W 150 °C Value Unit 1600 V 134 A 1250 A 7810 A s 143 W 130 °C Brake Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T h = 80°C T j = T jmax T j = T jmax T h = 80°C Conditions Symbol Brake Inverse Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j=T jmax T h =80°C T j=T jmax T h=80°C Symbol Conditions Rectifier Thyristor Repetitive peak reverse voltage V RRM Forward average current I FAV Surge forward current I FSM sine, d= 0,5 T j=T jmax t p=10 ms 2 I t value Power dissipation Maximum Junction Temperature Copyright Vincotech T s=80°C Tj=130°C 2 I t P tot T j=T jmax T jmax 2 T s=80°C 2 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Parameter Conditions Symbol Value Unit 1600 V 106 A 1380 A 9520 A s 139 W 150 °C Rectifier Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM 2 Surge current capability I t Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T h = 80°C 50 Hz Single Half Sine Wave t p = 10 ms 50 Hz sine T j = 150°C T j = T jmax T h = 80°C Conditions Symbol 2 Value Unit Module Propeties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC voltage t p=2s >200 CTI 3 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Characteristic Values Brake Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] T j[ °C] Unit Min Typ Max 5 5,8 6,5 1,71 2,1 Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE=V CE 0,003 25 125 25 15 75 1,35 125 1,98 V V 150 Collec tor-emitter c ut-off current I CES 0 1200 Gate-emitter leakage c urrent I GES 20 0 25 500 125 25 600 125 rg 10 Input capacitance C ies 5345 Output capacitance C oes Reverse transfer capac itance C res Internal gate resistance f=1 MHz 0 280 25 25 µA nA Ω pF 242 Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ =3,4W /mK 0,55 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr Rgoff = 4 Ω Rgon = 4 Ω tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off 245 125 31 125 449 125 178 125 8,606 125 8,116 ns t d(off) ±15 Fall time 125 Q rFWD = 12,2 µC 600 75 mWs Copyright Vincotech 4 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Typ Unit Max Static Forward voltage VF Reverse leakage c urrent Ir 50 25 1,85 125 1,89 25 1200 V 250 150 µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,93 K/W FWD Switching Peak recovery current I RRM 125 73 A Reverse recovery time t rr 125 490 ns Recovered charge Qr 125 12,166 µC E rec 125 4,543 mWs (di rf/dt )max 125 1165 A/µs Value Unit Reverse recovered energy Peak rate of fall of recovery current di/dt = 2497 A/µs ±15 600 75 Brake Inverse Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max Static Forward voltage Reverse leakage c urrent 7,5 VF 1200 Ir 25 1,65 125 1,61 150 - 25 V 250 150 - µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) phase-change material ʎ =3,4W/mK 2,20 5 K/W 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Rectifier Thyristor Parameter Conditions Symbol dIF /dt [A/us] Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,09 1,2 125 25 130 25 130 25 130 25 130 25 130 25 130 25 130 25 130 25 130 25 130 25 130 25 130 25 130 25 115 1,02 Static Forward voltage VF Threshold voltage (for power loss c alc. only) V to Slope resistance (for power loss calc . only) rt Reverse c urrent Ir Gate c ontrolled delay time t GD Gate c ontrolled rise time t GR Critic al rate of rise of off-state voltage (dv/dt)cr Critic al rate of rise of on-state c urrent (di/dt)cr Circuit c ommutated turn-off time 110 1600 1072 Tvj=25°C I G=1A dig/dt=1A/μs VD =0,67*VDRM 1072 tq Holding c urrent IH Latc hing current IL Gate trigger voltage V GT Gate trigger c urrent I GT Gate non-trigger voltage V GD Gate non-trigger current I GD 0,85 3,2 0,2 1 V V mΩ mA µs 2 µs 1000 100 V/µs A/µs µs 150 220 550 1,98 100 mA mA V mA V 0,25 mA 6 Thermal Thermal resistance chip to sink R th(j-s) phase-change material ʎ =3,4W/mK 0,35 K/W Value Unit Rectifier Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max 25 1,03 1,21 125 1,12 150 - Static Forward voltage Reverse leakage c urrent 77 VF 1600 Ir 25 V 50 150 1100 µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) phase-c hange material ʎ =3,4W/mK 0,50 6 K/W 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 300 I C (A) I C (A) 300 250 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V T j: 25 °C tp = 250 125 °C Tj = 125 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 100 Z t h(j h(j--s)(K/W) I C (A) 101 75 100 50 10-1 0,5 0,2 0,1 10-2 25 0,05 0,02 0,01 0,005 0 10-3 0 0 2 4 6 8 10 10-5 12 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 10 101 t p (s) 102 tp / T 0,55 K/W IGBT thermal model values 150 °C R th (K/W) Copyright Vincotech 10-1 7 7,87E-02 τ (s) 1,38E+00 1,57E-01 2,43E-01 2,74E-01 7,84E-02 2,46E-02 4,30E-03 1,24E-02 6,52E-04 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 120 Z t h(j h(j--s) (K/W) IF (A) 100 90 10-1 60 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 30 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = FWD Transient thermal impedance as a function of pulse width 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,93 K/W 150 °C FWD thermal model values Copyright Vincotech 8 R (K/W) 5,72E-02 τ (s) 2,80E+00 1,20E-01 5,37E-01 4,66E-01 1,06E-01 1,66E-01 3,81E-02 7,82E-02 8,59E-03 4,25E-02 1,08E-03 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Inverse Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 25 Z t h( jj--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 20 100 15 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 5 0 10-2 0 0,5 1 1,5 2 2,5 3 10-4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 1032 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 2,20 K/W 150 °C FWD thermal model values Copyright Vincotech 9 R (K/W) 4,63E-02 τ (s) 5,76E+00 1,60E-01 5,24E-01 7,96E-01 7,03E-02 5,50E-01 1,58E-02 3,61E-01 3,60E-03 2,88E-01 5,25E-04 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Rectifier Thyristor Characteristics Typical forward characteristics Thyristor Transient thermal impedance as a function of pulse width I F = f(V F) Thyristor Z th(j-s) = f(t p) 101 Z thJH (K/W) I F (A) 300 250 100 200 150 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 50 0 0 0,3 0,6 0,9 1,2 1,5 10-2 VF (V) tp = 250 T j= 25, 125, 150 10-5 µs °C 10-4 D= tp / T R th(j-s) = 0,35 10-3 10-2 10-1 100 t p (s) 101 K/W FWD thermal model values R (K/W) Tau (s) 5,84E-02 6,90E+01 7,83E-02 1,26E+00 2,06E-01 1,90E-01 2,08E-02 6,08E-02 1,29E-02 5,90E-03 Thyristor I F (A) Gate trigger characteristics 20V;20Ω 10,00 PG(tp) VGT VGH 1,00 125°C 25°C -40°C VGD I GT I GD 0,10 0,001 Copyright Vincotech 0,010 0,100 1,000 10 10,000 VF (V) 100,000 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Rectifier Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 250 Z t h( jj--s) (K/W) IF (A) 100 200 150 10-1 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,50 K/W 150 °C FWD thermal model values Copyright Vincotech 11 R (K/W) 2,79E-02 τ (s) 9,21E+00 7,78E-02 1,20E+00 1,49E-01 2,49E-01 2,15E-01 8,46E-02 3,51E-02 7,65E-03 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) E ( mWs) E (mWs) 25 20 Eon 20 Eon 15 15 Eoff 10 10 Eoff 5 5 0 0 0 20 40 60 80 100 120 140 160 0 I C (A) With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 4 Ω R goff = 4 Ω 10 15 With an inductive load at 600 V V CE = ±15 V V GE = 125 °C T j: 5 75 IC = Figure 3. FWD 20 T j: E rec = f(r g ) E (mWs) E (mWs) 35 FWD E rec = f(I c) Erec R g ( Ω) 125 °C Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or 5 30 A Typical reverse recovered energy loss as a f unction of collector current 6 25 5 Erec 4 4 3 3 2 2 1 1 0 0 0 20 40 60 With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 4 Copyright Vincotech 80 100 T j: 120 140 I C (A) 0 160 5 10 With an inductive load at 600 V V CE = ±15 V V GE = 125 °C Ω IC= 12 75 15 20 T j: 25 30 r g (Ω) 35 125 °C A 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(off ) td(on) td(on) tf tf 0,1 0,1 tr tr 0,01 0,01 0 20 40 60 80 100 120 140 160 0 I C (A) (A) With an induc tive load at 125 °C Tj= 600 V V CE = 5 10 15 20 25 r g (Ω) 35 With an inductive load at 125 °C Tj= 600 V V CE = V GE = ±15 V V GE = R gon = 4 Ω IC = R goff = 4 Ω Figure 7. FWD ±15 V 75 A Figure 8. FWD Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,8 0,8 t rr (μs) t rr (μs) Typical reverse recovery t ime as a f unction of collector current trr trr 0,6 0,6 0,4 0,4 0,2 0,2 0 0 0 20 40 60 80 100 120 140 160 0 I C (A) At 30 600 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 10 15 20 25 30 35 R g on (Ω) At T j: 5 125 °C V CE = V GE = IC= 13 600 V ±15 V 75 A T j: 125 °C 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 16 Q r (µC) Q r (μ C) Typical recovered charge as a f unction of collector current Qr 16 Qr 12 12 8 8 4 4 0 At 0 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At VCE= At T j: 125 °C V GE = I C= Figure 11. FWD 600 V ±15 V 75 A T j: 125 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 80 35 R g o n (Ω) I R M (A) I R M (A) 80 I RM 60 60 IRM 40 40 20 20 0 0 0 At 20 40 60 600 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 80 100 120 140 I C (A) 0 160 10 15 20 25 30 35 R g o n (Ω) At T j: 5 125 °C V CE = V GE = IC= 14 600 V ±15 V 75 A T j: 125 °C 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 3000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt dir r/dt 2500 3000 diF / dt di r r/ dt 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 0 20 40 60 80 100 120 140 0 160 5 10 15 20 25 I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At At T j: 125 °C V CE = V GE = I C= Figure 15. 600 V ±15 V 75 A T j: 30 35 R g o n (Ω) 125 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 160 I C MAX I c CHIP 140 120 M ODULE 100 Ic 80 60 V CE MAX 40 20 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 150 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 15 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switching Definitions General conditions = 125 °C = 4Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 4Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 200 125 tdoff % % VCE IC 100 150 VCE 90% VGE 90% 75 IC VCE 100 VGE VGE 50 tdon tEoff 50 25 IC 1% VGE 10% 0 0 VCE 3% IC 10% tEon -25 -0,2 -50 0 0,2 0,4 0,6 0,8 2,4 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 75 A t doff = t Eoff = 0,449 0,707 µs µs V GE (0%) = Figure 3. IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 2,8 3 -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 75 A t don = t Eon = 0,245 0,657 µs µs 3,2 3,4 t (µs) Figure 4. IGBT Turn-on Swit ching Wavef orms & def init ion of t r 200 125 fitted % 2,6 V GE (0%) = % VCE IC IC 175 100 IC 90% 150 75 125 VCE IC 60% 100 IC 90% 50 IC 40% 75 25 IC10% 25 0 IC 10% 0 tf -25 0,18 tr 50 0,27 0,36 0,45 0,54 0,63 -25 2,81 0,72 t (µs) 600 V V C (100%) = I C (100%) = 75 A tf= 0,178 µs Copyright Vincotech 2,832 2,854 2,876 2,898 2,92 t (µs) V C (100%) = 16 600 V I C (100%) = 75 A tr = 0,031 µs 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 200 % % IC 1% Poff Pon 100 150 Eoff 75 Eon 100 50 50 25 VGE 90% VCE 3% VGE 10% 0 0 tEoff tEon -50 -25 -0,1 0,1 0,3 0,5 2,4 0,7 2,6 2,8 3 P off (100%) = 44,97 kW P on (100%) = 44,97 kW E off (100%) = 8,12 mJ E on (100%) = 8,61 mJ t Eoff = 0,71 µs t Eon = 0,66 µs Figure 7. 3,2 3,4 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 fitted 0 Vd IRRM 10% -50 IRRM 90% IRRM 100% -100 -150 2,7 2,9 3,1 3,3 3,5 t (µs) V d (100%) = 600 V I d (100%) = 75 A I RRM (100%) = 73 A t rr = 0,490 µs Copyright Vincotech 17 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Brake Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Qrr Id 75 tQrr 50 Erec 100 100 tErec 50 0 25 Prec -50 0 -100 2,7 3 3,3 3,6 3,9 -25 4,2 2,7 t (µs) 3 3,3 3,6 4,2 t (µs) I d (100%) = 75 A P rec (100%) = 44,97 kW Q rr (100%) = 12,17 µC E rec (100%) = 4,54 mJ t Qrr = 1,04 µs t Erec = 1,04 µs Copyright Vincotech 3,9 18 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet V23990-P590-J09-PM / V23990-P590-J19-PM Ordering Code & Marking Version Thyristor, Rectifier Rectifier Ordering Code V23990-P590-J19-PM V23990-P590-J09-PM Vinco WWYY NNNNNNNVV UL LLLLL SSSS Text Datamatrix in DataMatrix as P590-J19 P590-J09 in packaging barcode as P590-J19 P590-J09 Vinco Date code Name&Ver UL Lot Serial Vinco WWYY NNNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 33,3 5,6 DC+ 2 33,3 2,8 DC+ 3 33,3 0 DC+ 4 30,5 0 DC+ 5 30,5 2,8 DC+ 6 30,5 5,6 DC+ 7 2,4 5,6 L1 8 2,4 2,8 L1 9 2,4 0 L1 10 0 0 L1 11 12 13 0 0 2,4 2,8 5,6 22,2 L1 L1 14 2,4 19,4 L2 15 2,4 16,6 L2 16 0 16,6 L2 17 0 19,4 L2 18 0 22,2 L2 19 33,3 22,2 DC- 20 33,3 19,4 DC- 21 33,3 16,6 DC- 22 30,5 16,6 DC- 23 30,5 19,4 DC- 24 30,5 22,2 DC- 25 30,5 8,4 SG1 26 33,3 8,4 SG2 Copyright Vincotech L2 19 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet V23990-P590-J09-PM / V23990-P590-J19-PM Pinout V23990-P590-J09 V23990-P590-J19 Identification ID Component Voltage Current Function D1, D2, D3, D4 Rectifier 1600 V 140 A Rectifier Diode SCR1, SCR2 Thyristor 1600 V 125 A Rectifier Thyristor Copyright Vincotech 20 Comment 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet V23990-P600-I09-PM / V23990-P600-I19-PM Ordering Code & Marking Version Thyristor, Rectifier, Brake Rectifier, Brake Ordering Code V23990-P600-I19-PM V23990-P600-I09-PM Vinco WWYY NNNNNNNVV UL LLLLL SSSS Text Datamatrix in DataMatrix as P600-I19 P600-I09 in packaging barcode as P600-I19 P600-I09 Vinco Date code Name&Ver UL Lot Serial Vinco WWYY NNNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 33,3 2,8 DC+ 2 33,3 0 DC+ 3 30,5 0 DC+ 4 28,1 0 DC+ 5 2,4 5,6 L1 6 2,4 2,8 L1 7 2,4 0 L1 8 0 0 L1 9 0 2,8 L1 10 0 5,6 L1 11 12 13 0 0 0 16,6 19,4 22,2 BrC BrC 14 30,5 22,2 BrG 15 30,5 19,4 BrS 16 33,3 22,2 DC- 17 33,3 19,4 DC- 18 33,3 16,6 DC- 19 30,5 16,6 DC- 20 33,3 8,4 21 30,5 2,8 Br+ SG1 Copyright Vincotech BrC 21 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet V23990-P600-I09-PM / V23990-P600-I19-PM Pinout V23990-P600-I09 V23990-P600-I19 Identification ID Component Voltage Current Function T1 IGBT 1200 V 75 A Brake Switch D2 FWD 1200 V 50 A Brake Diode D1 FWD 1200 V 7,5 A Brake Inverse Diode D3, D4 Rectifier 1600 V 140 A Rectifier Diode SCR1 Thyristor 1600 V 125 A Rectifier Thyristor Copyright Vincotech 22 Comment 14 Aug. 2015 / Revision 2 V23990-P590-J09-PM / V23990-P590-J19-PM / V23990-P600-I09-PM / V23990-P600-I19-PM datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flo w 0 packages see vincotech.com website. Document No.: Date: V23990-P590_P600-xx9-D2-14 14 Aug. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 23 14 Aug. 2015 / Revision 2