V23990 P760 A60 D2 14

V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
flow PIM 2
1200 V / 100 A
Features
flow 2 17mm housing
● 3~rectifier, BRC, Inverter, NTC
● Very compact housing, easy to route
● Mitsubishi IGBT and FWD
Schematic
Target applications
● Motor Drives
● Power Generation
Types
● V23990-P760-A60-PM
● V23990-P760-A60Y-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
TParameter
j=
Condition
Symbol
Value
Unit
1200
V
111
A
200
A
258
W
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S =80 °C
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Parameter
Conditions
Symbol
Value
Unit
1200
V
82
A
200
A
164
W
175
°C
Value
Unit
1200
V
61
A
100
A
144
W
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
TParameter
j=
T j = T jmax
T h = 80°C
T j = T jmax
T h = 80°C
Condition
Symbol
Brake Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Value
Unit
1200
V
27
A
100
A
69
W
175
°C
Value
Unit
1200
V
20
A
20
A
29
W
175
°C
Parameter
T S =80 °C
Conditions
Symbol
Brake Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
T j=T jmax
T h =80°C
Surge (non-repetitive) forward current
I FSM
50Hz Single Half Sine Wave
Total power dissipation
P tot
T j=T jmax
Maximum Junction Temperature
T jmax
Parameter
T h=80°C
Conditions
Symbol
Brake Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Copyright Vincotech
T j=T jmax
T h =80°C
T j=T jmax
T h=80°C
2
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Parameter
Conditions
Symbol
Value
Unit
1600
V
74
A
890
A
3960
A s
141
W
150
°C
Rectifier Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
V RRM
IF
I FSM
2
Surge current capability
I t
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T h = 80°C
50 Hz Single Half Sine Wave
t p = 10 ms 50 Hz sine
T j = 150°C
T j = T jmax
T h = 80°C
Conditions
Symbol
2
Value
Unit
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
4000
V
min 12,7
mm
11,96 / 12,03
mm
Isolation Properties
Isolation voltage
V isol
DC voltage
t p=2s
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
with Press-fit pins / with Solder pins
>200
CTI
3
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Characteristic Values
Inverter Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
5,4
6
6,6
1,77
2,2
Static
Gate-emitter threshold voltage
V GE(th) V GE=V CE
Collec tor-emitter saturation voltage
V CEsat
0,01
25
125
25
15
100
Collec tor-emitter cut-off c urrent
I CES
0
1200
Gate-emitter leakage current
I GES
20
0
Internal gate resistance
1,2
125
2,05
150
2,11
25
300
1000
125
rg
none
Input capacitance
C ies
6200
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Gate c harge
f=100 KHz
0
V
125
25
10
25
680
V
µA
nA
Ω
pF
74
15
Qg
600
100
25
210
nC
0,37
K/W
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 8,2 µC
Q rFWD = 19,5 µC
Q rFWD = 22,2 µC
4
600
100
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
63
63
64
7
9
9
146
190
202
55
76
81
2,002
3,517
4,014
4,777
7,481
8,253
ns
mWs
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
2,57
3,3
125
2,31
150
2,19
Static
Forward voltage
Reverse leakage current
100
VF
25
1200
Ir
V
50
150
-
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,58
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
di /dt = 13103 A/µs
di /dt = 10356 A/µs ±15
di /dt = 9265 A/µs
E rec
(di rf/dt )max
5
600
100
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
160
184
191
98
136
143
8,215
19,527
22,208
3,929
9,926
11,221
13494
5569
4331
A
ns
µC
mWs
A/µs
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
5,4
6
6,6
1,73
2,2
Static
Gate-emitter threshold voltage
V GE(th) V GE=V CE
Collec tor-emitter saturation voltage
V CEsat
0,005
25
125
25
15
50
Collec tor-emitter cut-off c urrent
I CES
0
1200
Gate-emitter leakage current
I GES
20
0
1,2
125
2,00
150
2,06
25
150
500
125
rg
none
Input capacitance
C ies
3100
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Internal gate resistance
Gate c harge
f=100 KHz
0
V
125
25
10
25
340
V
µA
nA
Ω
pF
37
15
Qg
600
50
25
105
nC
0,66
K/W
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 8 Ω
R gon = 8 Ω
t d(off)
±15
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Copyright Vincotech
tf
E on
Q rFWD = 3,1 µC
Q rFWD = 5,5 µC
Q rFWD = 6 µC
E off
6
600
50
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
51
51
51
9
11
12
134
174
186
53
76
83
1,665
2,281
2,541
2,538
3,868
4,259
ns
mWs
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
2,47
2,74
Static
25
Forward voltage
Reverse leakage current
25
VF
-
150
2,49
25
1200
Ir
125
V
60
150
-
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,38
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
di /dt = 3330 A/µs
di /dt = 3225 A/µs ±15
di /dt = 4192 A/µs
600
50
E rec
(di rf/dt )max
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
56
56
59
104
124
129
3,139
5,458
6,049
1,313
2,453
2,678
2327
1949
1339
A
ns
µC
mWs
A/µs
Brake Inverse Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
1,76
2,05
Static
25
Forward voltage
Reverse leakage current
10
VF
1200
Ir
125
-
150
1,68
25
V
2,7
150
-
µA
Thermal
Thermal resistanc e junction to sink
Copyright Vincotech
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
1,62
7
K/W
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Rectifier Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
1,64
1,5
Static
25
Forward voltage
Reverse leakage current
60
VF
-
150
1,70
25
1600
Ir
125
V
100
150
2000
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,5
K/W
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
8
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
300
I C (A)
I C (A)
300
250
250
200
200
150
150
100
100
50
50
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE =
15
V
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
100
Z t h( jj--s)(K/W)
I C (A)
100
75
10-1
50
0,5
0,2
0,1
25
0,05
0,02
0,01
0,005
0
10-2
0
0
2
4
6
8
10
10-4
12
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
tp / T
V CE =
10
V
125 °C
R th(j-s) =
0,37
T j:
Copyright Vincotech
150 °C
10-1
10
101
t p (s)
102
K/W
IGBT thermal model values
R th (K/W)
9
3,83E-02
τ (s)
3,87E+00
6,03E-02
6,84E-01
1,21E-01
1,20E-01
1,08E-01
3,47E-02
2,26E-02
6,82E-03
1,80E-02
7,32E-04
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
300
Z t h(j
h(j--s) (K/W)
IF (A)
100
250
200
10-1
150
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
50
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,58
K/W
150 °C
FWD thermal model values
Copyright Vincotech
10
R (K/W)
3,85E-02
τ (s)
4,56E+00
7,24E-02
8,53E-01
1,66E-01
1,38E-01
2,11E-01
3,67E-02
4,46E-02
8,35E-03
4,75E-02
1,22E-03
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switch Characteristics
Typical output characteristics
IGBT
I C = f(V CE)
Typical output characteristics
IGBT
I C = f(V CE)
150
I C (A)
I C (A)
150
120
120
90
90
60
60
30
30
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE =
15
V
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
I C = f(V GE)
µs
°C
Transient Thermal Impedance as function of Pulse duration
IGBT
Z th(j-s) = f(t p)
50
Z t h( jj--s)(K/W)
I C (A)
100
40
30
10-1
20
0,5
0,2
0,1
0,05
10
0,02
0,01
0,005
0
10-2
0
0
2
4
6
8
10
10-4
12
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
V CE =
10
V
125 °C
R th(j-s) =
T j:
Copyright Vincotech
150 °C
10-1
10
101
t p (s)
102
tp / T
0,66
K/W
IGBT thermal model values
R th (K/W)
11
5,47E-02
τ (s)
4,08E+00
7,84E-02
6,81E-01
1,96E-01
1,11E-01
2,54E-01
3,17E-02
4,44E-02
4,90E-03
3,28E-02
4,86E-04
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Diode Characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
101
75
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
60
100
45
30
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
15
0
10-2
0
1
2
3
4
5
10-4
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
1032
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,38
K/W
150 °C
FWD thermal model values
Copyright Vincotech
12
R (K/W)
2,65E-02
τ (s)
9,28E+00
2,03E-01
7,62E-01
5,75E-01
1,47E-01
3,32E-01
2,99E-02
1,56E-01
4,40E-03
8,92E-02
6,49E-04
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Inverse Diode Characteristics
FWD
Typical forward characteristics
Z th(j-s) = f(t p)
32
101
Z t h(j
h(j--s) (K/W)
IF (A)
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
24
100
16
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
8
0
10-2
0
1
2
3
4
5
10-5
10-4
10-3
VF (V)
tp =
250
µs
T j:
10-2
10-1
100
101
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
1,62
K/W
150 °C
FWD thermal model values
Copyright Vincotech
13
R (K/W)
6,84E-02
τ (s)
2,41E+00
1,62E-01
1,88E-01
6,14E-01
3,05E-02
5,11E-01
7,89E-03
2,69E-01
1,18E-03
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Rectifier Diode Characteristics
Rectifier Diode
Typical forward characteristics
I F = f(V F )
Transient thermal impedance as a function of pulse width Rectif ier Diode
Z th(j-s) = f(t p)
180
Z t h(j
h(j--s) (K/W)
IF (A)
100
150
120
10-1
90
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
60
30
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,5
K/W
150 °C
Diode thermal model values
R (K/W)
4,13E-02
τ (s)
4,29E+00
9,77E-02
7,26E-01
1,88E-01
1,21E-01
1,43E-01
3,68E-02
2,79E-02
1,66E-03
Thermistor
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
14
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
E (mWs)
E ( mWs)
16
Eoff
Eoff
12
12
Eon
Eon
9
Eoff
Eoff
Eo n
E o ff
Eon
8
6
Eon
Eo ff
Eo n
4
3
0
0
0
50
100
150
200
0
I C (A)
25 °C
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
T j:
125 °C
150 °C
Figure 3.
4
8
FWD
V GE =
±15
V
IC =
100
A
12
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
E ( mWs)
E (mWs)
20
150 °C
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
R g ( Ω)
125 °C
T j:
Typical reverse recovered energy loss as a f unct ion of collect or current
16
16
25 °C
With an inductive load at
600
V
V CE =
12
Erec
Erec
9
12
Erec
6
8
Erec
Erec
3
4
0
0
0
50
100
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
4
Ω
Copyright Vincotech
150
I C (A)
0
200
25 °C
T j:
4
8
With an inductive load at
600
V
V CE =
125 °C
150 °C
15
V GE =
±15
V
IC=
100
A
12
16
r g (Ω)
20
25 °C
T j:
125 °C
150 °C
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
0,1
td(on)
0,1
tf
tf
td(on)
tr
tr
0,01
0,01
0,001
0,001
0
50
100
150
200
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
4
8
V CE =
600
V
V CE =
600
V
V GE =
±15
V
V GE =
±15
V
IC =
100
A
R gon =
4
Ω
R goff =
4
Ω
12
16
r g (Ω)
20
With an inductive load at
150
°C
Tj =
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,25
t rr (μs)
t rr (μs)
1,2
trr
trr
0,2
0,9
trr
trr
0,15
0,6
trr
0,1
trr
0,3
0,05
0
0
0
50
100
150
200
0
I C (A)
At
600
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
8
12
16
20
R g o n (Ω)
25 °C
T j:
4
600
V
125 °C
V GE =
±15
V
150 °C
IC=
100
A
At
16
V CE =
25 °C
T j:
125 °C
150 °C
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
40
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
30
40
30
Qr
Qr
Qr
20
20
Qr
Qr
10
10
Qr
0
At
0
0
50
100
150
200
0
4
8
12
16
20
R g on (Ω)
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
At
V CE =
25 °C
T j:
At
VCE=
600
V
125 °C
V GE =
±15
V
150 °C
I C=
100
A
Figure 11.
FWD
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
250
I R M (A)
I R M (A)
400
IRM
200
IR M
300
IRM
150
200
100
IRM
100
IRM
50
IRM
0
0
0
At
50
100
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
150
I C (A)
0
200
8
12
16
20
R go n (Ω)
25 °C
T j:
4
600
V
125 °C
V GE =
±15
V
150 °C
IC=
100
A
At
17
V CE =
25 °C
T j:
125 °C
150 °C
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
25000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
20000
di F / dt
di r r /dt
di F / dt
di r r/ dt
20000
15000
15000
10000
10000
5000
5000
0
0
0
50
100
150
0
200
4
8
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
At
V CE =
25 °C
T j:
600
V
125 °C
V GE =
±15
V
150 °C
I C=
100
A
At
Figure 15.
V CE =
12
16
20
R g o n (Ω)
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
250
I C MAX
I c CHIP
200
Ic
MODULE
150
100
V CE MAX
50
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
18
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switching Definitions
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
4Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
125
300
tdoff
%
IC
%
VCE
250
100
VCE 90%
VGE 90%
200
75
IC
VGE
150
50
VCE
tEoff
100
VGE
tdon
25
50
IC 1%
V GE 10%
0
VCE 3%
IC 10%
0
tEon
-25
-0,2
-0,05
0,1
0,25
0,4
0,55
-50
2,93
0,7
t (µs)
2,98
3,03
3,08
3,13
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
100
A
I C (100%) =
100
A
t doff =
0,19
µs
t don =
0,063
µs
t Eoff =
Figure 3.
0,588
µs
t Eon =
Figure 4.
0,18
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,23
3,28
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
%
3,18
300
fitted
IC
VCE
IC
%
250
100
IC 90%
200
75
IC 60%
150
50
VCE
IC 40%
100
IC 90%
tr
25
50
IC10%
0
IC 10%
0
tf
-25
-0,05
0,02
0,09
0,16
0,23
0,3
0,37
-50
0,44
3
t (µs)
3,04
3,08
3,12
3,2
3,24
t (µs)
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
100
A
I C (100%) =
100
A
tf=
0,076
µs
tr =
0,009
µs
Copyright Vincotech
3,16
19
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
200
%
IC 1%
Poff
100
%
Eoff
Pon
150
75
Eon0
100
50
50
25
VCE 3%
VGE 10%
VGE 90%
0
0
tEoff
tEon
-50
-25
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
2,9
2,98
3,06
3,14
P off (100%) =
59,93
kW
P on (100%) =
59,93
kW
E off (100%) =
7,48
mJ
E on (100%) =
3,52
mJ
t Eoff =
0,588
µs
t Eon =
0,181
µs
Figure 7.
3,22
3,3
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
Vd
fitted
IRRM 10%
0
-50
-100
-150
IRRM 90%
IRRM 100%
-200
2,9
2,98
3,06
3,14
3,22
3,3
3,38
t (µs)
V d (100%) =
600
V
I d (100%) =
100
A
I RRM (100%) =
-184
A
t rr =
0,136
µs
Copyright Vincotech
20
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
Id
%
Qrr
100
Erec
Prec
100
tQrr
50
tErec
75
0
50
-50
25
-100
0
-150
-200
2,8
3
3,2
3,4
3,6
3,8
4
4,2
-25
4,4
2,8
t (µs)
3
3,2
3,4
3,6
4
4,2
4,4
t (µs)
I d (100%) =
100
A
P rec (100%) =
59,93
kW
Q rr (100%) =
19,53
µC
E rec (100%) =
9,93
mJ
t Qrr =
1,00
µs
t Erec =
1,00
µs
Copyright Vincotech
3,8
21
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
8
E (mWs)
E ( mWs)
Typical swit ching energy losses as a f unct ion of collect or current
Eoff
Eoff
Eon
Eon
6
6
Eon
Eon
Eoff
Eoff
4,5
Eo n
Eo n
E o ff
4
3
Eo ff
2
1,5
0
0
0
20
40
60
80
100
0
I C (A)
25 °C
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
T j:
8
16
125 °C
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
50
A
24
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
E ( mWs)
E (mWs)
40
150 °C
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
R g ( Ω)
125 °C
T j:
Typical reverse recovered energy loss as a f unct ion of collect or current
4
32
25 °C
With an inductive load at
600
V
V CE =
4
Erec
3
3
Erec
2
2
Erec
1
Erec
Erec
1
0
0
0
20
40
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
8
Ω
Copyright Vincotech
60
80
I C (A)
0
100
25 °C
T j:
8
16
With an inductive load at
600
V
V CE =
125 °C
150 °C
V GE =
IC=
22
±15
V
50
A
24
32
r g (Ω)
40
25 °C
T j:
125 °C
150 °C
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
td(on)
0,1
0,1
tf
tf
td(on)
tr
tr
0,01
0,01
0,001
0,001
0
20
40
60
80
100
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
8
16
24
32
V CE =
600
V
V CE =
600
V
V GE =
±15
V
V GE =
±15
V
R gon =
8
Ω
IC =
50
A
R goff =
8
Ω
Figure 7.
FWD
Figure 8.
40
FWD
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,4
0,8
t rr (μs)
t rr (μs)
Typical reverse recovery t ime as a f unct ion of collect or current
0,3
0,6
trr
trr
trr
trr
0,2
0,4
trr
trr
0,1
0,2
0
0
0
20
40
60
80
100
0
I C (A)
At
r g (Ω)
With an inductive load at
150
°C
Tj =
600
V
V GE =
±15
V
R gon =
8
Ω
V CE=
Copyright Vincotech
16
24
32
40
R g o n (Ω)
25 °C
T j:
8
At
V CE =
125 °C
V GE =
150 °C
IC=
23
600
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
10
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
Qr
8
8
6
Qr
Qr
Qr
6
4
Qr
4
Qr
2
2
0
At
0
0
20
40
60
80
100
0
8
16
24
32
40
R g on (Ω)
I C (A)
600
V
V GE =
±15
V
R gon =
8
Ω
V CE =
At
25 °C
T j:
VCE=
At
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
600
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
75
I R M (A)
I R M (A)
160
IRM
60
I RM
120
I RM
45
80
30
40
IRM
IRM
I RM
15
0
0
0
At
20
40
600
V
V GE =
±15
V
R gon =
8
Ω
V CE =
Copyright Vincotech
60
80
I C (A)
0
100
T j:
8
16
24
32
40
R go n (Ω)
25 °C
At
V CE =
125 °C
V GE =
150 °C
IC=
24
600
V
±15
V
50
A
25 °C
T j:
125 °C
150 °C
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
20000
8000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F / dt
di r r /dt
di F / dt
di r r / dt
6000
15000
4000
10000
2000
5000
0
0
0
20
40
60
80
0
100
8
16
I C (A)
600
V
V GE =
±15
V
R gon =
8
Ω
V CE =
At
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
600
V
±15
V
50
A
24
32
40
R g o n (Ω)
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
120
I C MAX
I c CHIP
100
80
Ic
MODULE
60
40
V CE MAX
20
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
8
Ω
R goff =
8
Ω
Tj =
Copyright Vincotech
25
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switching Definitions
General conditions
=
125 °C
=
8Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
8Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
125
250
tdoff
%
%
VCE
IC
100
200
VGE 90%
VCE 90%
75
150
VGE
IC
VCE
50
100
tEoff
VGE
tdon
25
50
IC 1%
VGE 10%
0
VCE 3%
IC 10%
0
tEon
-25
-0,15
0
0,15
0,3
0,45
0,6
-50
2,95
0,75
t (µs)
3
3,05
3,1
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
50
A
I C (100%) =
50
A
t doff =
0,174
µs
t don =
0,051
µs
t Eoff =
Figure 3.
0,67
µs
t Eon =
Figure 4.
0,196
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,2
3,25
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
250
fitted
%
3,15
VCE
IC
%
100
IC
200
IC 90%
75
150
VCE
IC 60%
50
100
IC 90%
IC 40%
tr
25
50
IC10%
0
-25
-0,05
tf
0
0,05
0,1
0,15
IC 10%
0
0,2
0,25
0,3
0,35
-50
2,95
0,4
t (µs)
3
3,05
3,1
3,2
3,25
t (µs)
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
50
A
I C (100%) =
50
A
tf=
0,076
µs
tr =
0,011
µs
Copyright Vincotech
3,15
26
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
200
%
%
IC 1%
Poff
Pon
100
150
Eoff
75
Eon
100
50
50
25
VCE 3%
VGE 10%
VGE 90%
0
0
tEoff
tEon
-50
-25
-0,15
0
0,15
0,3
0,45
0,6
0,75
2,9
2,97
3,04
3,11
P off (100%) =
29,99
kW
P on (100%) =
29,99
kW
E off (100%) =
3,87
mJ
E on (100%) =
2,28
mJ
t Eoff =
0,67
µs
t Eon =
0,196
µs
Figure 7.
3,18
3,25
3,32
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
IRRM 10%
-50
IRRM 90%
IRRM 100%
-100
-150
2,95
3,02
3,09
3,16
3,23
3,3
3,37
t (µs)
V d (100%) =
600
V
I d (100%) =
50
A
I RRM (100%) =
-56
A
t rr =
0,124
µs
Copyright Vincotech
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24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Brake Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Id
Erec
Qrr
100
100
50
tErec
75
tQrr
0
50
-50
25
-100
0
Prec
-150
2,8
3
3,2
3,4
3,6
3,8
4
4,2
-25
4,4
2,9
t (µs)
3,08
3,26
3,44
3,62
3,98
4,16
4,34
t (µs)
I d (100%) =
50
A
P rec (100%) =
29,99
kW
Q rr (100%) =
5,46
µC
E rec (100%) =
2,45
mJ
t Qrr =
1,00
µs
t Erec =
1,00
µs
Copyright Vincotech
3,8
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V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Ordering Code & Marking
Version
without thermal paste with Solder pins
without thermal paste with Press-fit pins
with thermal paste with Solder pins
with thermal paste with Press-fit pins
Ordering Code
V23990-P760-A60-PM
V23990-P760-A60Y-PM
V23990-P760-A60-/3/-PM
V23990-P760-A60Y-/3/-PM
Vinco WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
Datamatrix
in DataMatrix as
P760A60
P760A60Y
P760A60
P760A60Y
in packaging barcode as
P760A60
P760A60Y
P760A60-/3/
P760A60Y-/3/
Vinco
Date code
Name&Ver
UL
Lot
Serial
Vinco
WWYY
NNNNNNNVV
UL
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
Function
1
71,2
0
DC-
29
0
37,2
U
2
68,7
0
DC-
30
2,5
37,2
U
3
66,2
0
DC-
31
5
37,2
U
4
63,7
0
DC-
32
7,8
37,2
E
5
55,95
0
DC+
33
10,6
37,2
G
6
53,45
0
DC+
34
18,45
37,2
G
7
55,95
2,8
DC+
35
21,25
37,2
E
8
53,45
0
DC+
36
24,05
37,2
V
9
48,4
0
DC+
37
26,55
37,2
V
10
45,9
0
DC+
38
29,05
37,2
V
11
12
13
38,9
36,1
38,9
0
0
2,8
E
DC-
39
40
36,1
38,6
37,2
37,2
W
W
G
41
41,1
37,2
W
14
36,1
2,8
DC-
42
43,9
37,2
E
15
31,3
0
DC-
43
16
28,5
0
E
37,2
37,2
G
L1
17
31,3
2,8
DC-
44
45
46,7
53,7
56,2
37,2
L1
18
28,5
2,8
G
46
58,7
37,2
L1
19
19,3
0
R2
47
71,2
37,2
L2
20
19,3
2,8
R1
48
71,2
34,7
L2
21
12,3
0
DC+
49
71,2
32,2
L2
22
9,8
0
DC+
50
71,2
25,2
L3
23
12,3
2,8
DC+
51
71,2
22,7
L3
24
9,8
2,8
DC+
52
71,2
20,2
L3
25
2,8
0
E
53
68,7
12,8
BrC
71,2
71,2
71,2
12,8
5,6
2,8
BrC
BrG
BrG
26
0
0
DC-
54
27
2,8
2,8
G
28
0
2,8
DC-
55
56
Copyright Vincotech
29
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V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1,T3,T5,T7,T9,T11
IGBT
1200V
100A
Inverter Switch
D9-D14
FWD
1200V
100A
Inverter Diode
T13
IGBT
1200V
50A
Brake Switch
D7
FWD
1200V
25A
Brake Diode
D8
FWD
1200V
10A
Brake Inverse Diode
Rectifier Diode
D1-D6
Rectifier
1600V
60A
C1,C2,C3,C4
Capacitor
1000V
-
DC Link
T
NTC
-
-
Thermistor
Copyright Vincotech
30
Comment
24 Jun. 2015 / Revision 2
V23990-P760-A60-PM
V23990-P760-A60Y-PM
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
42
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Document No.:
Date:
V23990-P760-A60-D2-14
24 Jun. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or
use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe
third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for
reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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24 Jun. 2015 / Revision 2