30-F2166BA150RW-L267G09 datasheet flow CON 2 1600 V / 150 A Features flow 2 17mm housing ● High Efficiency input rectifier ● Brake ● Complementary to flowPACK2 Schematic Target applications ● ● ● ● SMPS Welding UPS Drives Types ● 30-F2166BA150RW-L267G09 Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 112 A 300 A 291 W Brake Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S =80 °C 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Parameter Conditions Symbol Value Unit 1200 V 50 A 100 A 94 W 150 °C Value Unit 1200 V 15 A 15 A 33 W 150 °C Value Unit 1600 V 130 A 1650 A T j = °C 13600 A s T h = 80°C 143 W 150 °C Brake Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T h = 80°C T j = T jmax T h = 80°C Conditions Symbol Brake Switch Protection Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax T j=T jmax T h =80°C T j=T jmax T h=80°C Rectifier Diode Parameter Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current Conditions Symbol V RRM IF I FSM 2 T j = T jmax 50 Hz Single Half Sine Wave Surge current capability I t t p = 10 ms 50 Hz sine Total power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax Copyright Vincotech T h = 80°C 2 2 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Parameter Conditions Symbol Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC voltage t p=2s >200 CTI 3 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Characteristic Values Brake Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,1 5,8 6,4 1,53 1,90 1,97 Static Gate-emitter threshold voltage V GE(th) V GE=V CE 0 25 125 25 Collec tor-emitter saturation voltage Collec tor-emitter c ut-off current Gate-emitter leakage c urrent Internal gate resistance Input capacitance 15 V CEsat 0 I CES 20 I GES 125 - 150 2,30 25 1200 V 10 125 25 0 120 125 7,5 rg µA nA Ω 6300 C ies f=1 MHz Reverse transfer capac itance 100 V 0 0 25 pF 270 C res Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W /mK 0,33 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 4 Ω R gon = 4 Ω t d(off) 15/0 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 8,7 µC Q rFWD = 15,4 µC 4 600 100 25 125 25 125 25 125 25 125 25 125 25 125 54 55 35 38 533 634 53 107 7,141 9,512 6,332 10,171 ns mWs 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Typ Unit Max Static Forward voltage VF Reverse leakage c urrent Ir 50 25 1,85 125 1,89 25 1200 V 250 150 µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,75 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech di /dt = 3488 A/µs 15/0 di /dt = 2550 A/µs E rec (di rf/dt )max 5 600 100 25 125 25 125 25 125 25 125 25 125 72 87 274 446 8,749 15,436 3,559 6,590 517 749 A ns µC mWs A/µs 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switch Protection Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Typ Unit Max Static Forward voltage VF Reverse leakage c urrent Ir 170 1600 25 1,24 125 1,20 V 25 0,1 150 1,1 mA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,49 K/W Value Unit Rectifier Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max Static Forward voltage VF Reverse leakage c urrent Ir 170 1600 25 1,24 125 1,20 V 25 0,1 150 1,1 µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,49 K/W Value Unit Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] 100 R100=1486 Ω Power dissipation constant Typ Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 6 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 200 I C (A) I C (A) 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE = 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 100 Z t h(j h(j--s)(K/W) I C (A) 100 80 60 10-1 40 0,5 0,2 0,1 0,05 20 0,02 0,01 0,005 0 10-2 0 0 2 4 6 8 10 10-4 12 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= V CE = 0 V 125 °C R th(j-s) = T j: Copyright Vincotech 10-1 100 101 t p (s) 102 tp / T 0,33 K/W IGBT thermal model values 150 °C R th (K/W) 7 6,80E-02 τ (s) 1,50E+00 9,16E-02 1,41E-01 1,25E-01 3,64E-02 2,35E-02 1,13E-02 1,82E-02 8,50E-04 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F ) Z th(j-s) = f(t p) 150 Z t h(j h(j--s) (K/W) IF (A) 100 120 90 10-1 60 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 30 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,75 K/W 150 °C FWD thermal model values Copyright Vincotech 8 R (K/W) 3,50E-02 τ (s) 5,35E+00 7,36E-02 8,54E-01 1,83E-01 1,14E-01 3,18E-01 2,85E-02 8,17E-02 7,22E-03 5,49E-02 8,83E-04 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switch Protection Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 25 Z t h(j h(j--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 20 100 15 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 5 0 10-2 0 0,5 1 1,5 2 2,5 3 10-4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 1032 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 2,12 K/W 150 °C FWD thermal model values Copyright Vincotech 9 R (K/W) 7,00E-02 τ (s) 3,23E+00 1,48E-01 4,03E-01 7,34E-01 6,67E-02 5,90E-01 2,04E-02 3,47E-01 4,32E-03 2,36E-01 8,05E-04 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Rectifier Diode Characteristics Typical forward characteristics Rectifier Diode I F = f(V F ) Transient thermal impedance as a function of pulse width Rectifier Diode Z th(j-s) = f(t p) 600 ZZtth(j-s) h( jj--s) (K/W) (K/W) IFF(A) I (A) 100 500 400 10-1 300 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 200 100 10-2 0 0 0,5 1 1,5 2 10-4 2,5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,49 K/W 150 °C Diode thermal model values Copyright Vincotech 10 R (K/W) 6,58E-02 τ (s) 9,90E+00 1,06E-01 1,36E+00 1,12E-01 2,38E-01 1,47E-01 6,36E-02 4,25E-02 2,17E-02 1,64E-02 2,20E-03 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 11 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) 20 E ( mWs) E (mWs) 25 Eon 20 Eon 15 Eoff Eon Eo n 15 Eoff 10 E o ff 10 Eo ff 5 5 0 0 0 20 40 60 80 100 120 140 160 180 200 0 I C (A) 25 °C With an induc tive load at 600 V V CE = 15/0 V V GE = R gon = 4 Ω R goff = 4 Ω T j: 2 4 6 8 125 °C 150 °C 100 IC = Figure 3. FWD 10 12 14 16 R g ( Ω) 18 25 °C With an inductive load at 600 V V CE = 15/0 V V GE = T j: 125 °C 150 °C A Figure 4. FWD Typical reverse recovered energy loss as a f unction of collector current Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 8 E ( mWs) E (mWs) 10 Erec 8 Erec 6 6 Erec 4 4 Erec 2 2 0 0 0 20 40 60 With an induc tive load at 600 V V CE = 15/0 V V GE = R gon = 4 Copyright Vincotech 80 100 120 140 160 180 I C (A) 0 200 25 °C T j: 2 4 6 With an inductive load at 600 V V CE = 15/0 V V GE = 125 °C 150 °C Ω IC= 12 100 8 10 12 14 16 r g (Ω) 18 25 °C T j: 125 °C 150 °C A 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 10 t ( μ s) t ( μ s) 1 td(off ) td(off ) 1 tf 0,1 tf td(on) td(on) 0,1 tr tr 0,01 0,01 0 20 40 60 80 100 120 140 160 180 200 0 I C (A) (A) With an induc tive load at 125 °C Tj= 2 4 6 V CE = 600 V V CE = 600 V V GE = 15/0 V V GE = 15/0 V IC = 100 A R gon = 4 Ω R goff = 4 Ω 8 10 12 14 16 r g (Ω) 18 With an inductive load at 125 °C Tj= Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,8 0,8 t r r (μs) t r r (μs) Typical reverse recovery t ime as a f unction of collector current trr 0,6 trr 0,6 trr 0,4 0,4 trr 0,2 0,2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 I C (A) At 600 V V GE = 15/0 V R gon = 4 Ω V CE= Copyright Vincotech 4 6 8 10 12 14 16 18 R g on (Ω) 25 °C T j: 2 600 V 125 °C V GE = 15/0 V 150 °C IC= 100 A At 13 V CE = 25 °C T j: 125 °C 150 °C 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 25 16 Q r (µC) Q r (μ C) Typical recovered charge as a f unction of collector current 20 Qr Qr 12 15 Qr 8 Qr 10 4 5 0 At 0 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 I C (A) At V CE = 600 V V GE = 15/0 V R gon = 4 Ω 25 °C T j: At VCE= 600 V 125 °C V GE = 15/0 V 150 °C I C= 100 A Figure 11. FWD 18 R g o n (Ω) 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 120 I R M (A) I R M (A) 120 IR M 90 90 IRM IRM 60 60 IRM 30 30 0 0 0 At 50 100 600 V V GE = 15/0 V R gon = 4 Ω V CE = Copyright Vincotech 150 I C (A) 0 200 4 6 8 10 12 14 16 18 R g o n (Ω) 25 °C T j: 2 600 V 125 °C V GE = 15/0 V 150 °C IC= 100 A At 14 V CE = 25 °C T j: 125 °C 150 °C 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) d i /d t (A/ (A/µ µs) 4000 d i /dt (A/ (A/µs) s) diF / dt dir r/dt 5000 diF / dt di r r/ dt 4000 3000 3000 2000 2000 1000 1000 0 0 0 20 40 60 80 100 120 140 160 180 0 200 5 10 15 I C (A) 600 V V GE = 15/0 V R gon = 4 Ω At V CE = 25 °C T j: 600 V 125 °C V GE = 15/0 V 150 °C I C= 100 A At V CE = R g on (Ω) 20 25 °C T j: 125 °C 150 °C Switching Definitions Figure 15. IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 250 I C MAX I c CHIP 200 Ic MODULE 150 100 V CE MAX 50 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 15 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switching Definitions General conditions = 125 °C = 4Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 4Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 125 200 tdoff % IC % VCE 100 150 VCE 90% VGE 90% 75 VCE IC 100 VGE VGE 50 tdon tEoff 50 25 IC 1% VGE 10% 0 -25 -0,1 VCE 3% IC 10% 0 tEon -50 0,1 0,3 0,5 0,7 0,9 1,1 2,9 3 3,1 3,2 3,3 t (µs) 3,4 t (µs) V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 99 A I C (100%) = 99 A t doff = 0,634 µs t don = 0,055 µs t Eoff = Figure 3. 0,997 µs t Eon = Figure 4. 0,352 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 200 125 fitted % % VCE IC IC 175 100 150 IC 90% 75 125 VCE IC 60% 100 IC 90% 50 IC 40% 75 25 tr 50 IC10% 0 25 tf IC 10% 0 -25 0,3 0,4 0,5 0,6 0,7 0,8 0,9 -25 1 2,9 t ( µs) 3 3,1 3,2 V C (100%) = 600 V V C (100%) = 600 I C (100%) = 99 A I C (100%) = 99 A tf= 0,107 µs tr = 0,038 µs Copyright Vincotech 16 3,3 t (µs) 3,4 V 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 175 % 100 Pon % IC 1% Poff 150 Eoff 125 Eon 75 100 50 75 50 25 VGE 90% 25 VCE 3% VGE 10% 0 tEoff 0 tEon -25 -25 -0,1 0,1 0,3 0,5 0,7 0,9 2,9 1,1 3 3,1 3,2 P off (100%) = 59,64 kW P on (100%) = 59,64 kW E off (100%) = 10,17 mJ E on (100%) = 9,51 mJ t Eoff = 1,00 µs t Eon = 0,35 µs Figure 7. 3,3 3,4 3,5 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 125 % Id 100 75 trr 50 25 fitted Vd 0 IRRM 10% -25 -50 -75 IRRM 90% IRRM 100% -100 -125 3 3,1 3,2 3,3 3,4 3,5 3,6 t (µs) V d (100%) = 600 V I d (100%) = 99 A I RRM (100%) = -87 A t rr = 0,446 µs Copyright Vincotech 17 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Brake Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 125 % Qrr Id 100 % Erec 100 75 tQrr 50 tErec 75 25 50 0 -25 Prec 25 -50 0 -75 -100 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 -25 3,8 3 t (µs) 3,1 3,2 3,3 3,4 3,6 3,7 3,8 t (µs) I d (100%) = 99 A P rec (100%) = 59,64 kW Q rr (100%) = 15,44 µC E rec (100%) = 6,59 mJ t Qrr = 0,61 µs t Erec = 0,61 µs Copyright Vincotech 3,5 18 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Ordering Code & Marking Version without thermal paste with solder pins Ordering Code 30-F2166BA150RW-L267G09 NN-NNNNNNNNNNNNNN TTTTTTTVV WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L267G09 in packaging barcode as L267G09 Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTTVV WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y Function 1 70 0 BG 26 9 20,1 R 2 67 0 BS 27 11,8 17,3 R 3 49,8 0 NEG BUS 28 11,8 20,1 R 4 47 0 NEG BUS 29 20,8 17,3 S 5 47 2,8 NEG BUS 30 20,8 20,1 S 6 47 5,6 NEG BUS 31 23,6 17,3 S 7 2,8 0 NEG OUT 32 23,6 20,1 S 8 2,8 2,8 NEG OUT 33 26,4 17,3 S 9 2,8 5,6 NEG OUT 34 26,4 20,1 S 10 5,6 0 NEG OUT 35 35,4 17,4 T 11 0 0 NEG OUT 36 35,4 20,2 T 12 0 2,8 NEG OUT 37 38,2 17,4 T 13 0 5,6 NEG OUT 38 38,2 20,2 T 14 0 8,4 NEG OUT 39 41 17,4 T 15 0 27,6 POS OUT 40 41 20,2 T 16 0 30,4 POS OUT 41 47 30,4 POS BUS 17 0 33,2 POS OUT 42 47 33,2 POS BUS 18 0 36 POS OUT 43 47 36 POS BUS 19 2,8 27,6 POS OUT 44 61,6 22,85 BR 20 2,8 30,4 POS OUT 45 64,4 22,85 BR 21 2,8 33,2 POS OUT 46 67,2 22,85 BR 22 2,8 36 POS OUT 47 70 22,85 BR 23 6,2 16,45 24 6,2 19,25 R R 48 49 64,2 70,6 36,55 36,55 NTC1 NTC2 25 9 17,3 R Copyright Vincotech 19 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Pinout Identification ID Component Voltage Current Function T1 IGBT 1200V 100A Brake Switch D7 FWD 1200V 50A Brake Diode D8 Rectifier 1200V 7,5A Brake Sw. Protection Diode D1-D6 Rectifier 1600V 170A Rectifier Diode Rt NTC - - Thermistor Copyright Vincotech 20 Comment 05 Nov. 2015 / Revision 2 30-F2166BA150RW-L267G09 datasheet Packaging instruction Standard packaging quantity (SPQ) 42 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 2 packages see vincotech.com website. Package data Package data for flow 2 packages see vincotech.com website. Document No.: Date: Modification: Pages 30-F2166BA150RW-L267G09 -D2-14 05 Nov. 2015 Outline correction 19 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 21 05 Nov. 2015 / Revision 2