30-F2166BA150RW01-L267G19 datasheet flow CON 2 1600 V / 150 A Features flow 2 17mm housing ● High Efficiency input rectifier ● Brake ● Complementary to flowPACK2 Schematic Target applications ● ● ● ● SMPS Welding UPS Drives Types ● 30-F2166BA150RW01-L267G19 Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 134 A 450 A 313 W Brake Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S =80 °C 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Parameter Conditions Symbol Value Unit 1200 V 70 A 140 A 146 W 150 °C Value Unit 1200 V 15 A 15 A 33 W 150 °C Value Unit 1600 V 130 A 1650 A T j = °C 13600 A s T h = 80°C 143 W 150 °C Brake Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T h = 80°C T j = T jmax T j = T jmax T h = 80°C Conditions Symbol Brake Switch Protection Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j=T jmax T h =80°C T j=T jmax T h=80°C Conditions Symbol Rectifier Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM 2 T j = T jmax 50 Hz Single Half Sine Wave Surge current capability I t t p = 10 ms 50 Hz sine Total power dissipation P tot T j = T jmax Maximum Junction Temperature T jmax Copyright Vincotech T h = 80°C 2 2 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Parameter Conditions Symbol Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC voltage t p=2s >200 CTI 3 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Characteristic Values Brake Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,3 5,8 6,3 1,58 1,93 2,07 Static Gate-emitter threshold voltage V GE(th) V GE=V CE 0,0052 25 125 25 Collec tor-emitter saturation voltage 15 V CEsat 150 Collec tor-emitter c ut-off current I CES 0 1200 Gate-emitter leakage c urrent I GES 20 0 Internal gate resistance Input capacitance - 150 2,40 25 V 10 125 25 240 125 5 rg µA nA Ω 8600 C ies f=1 MHz Reverse transfer capac itance 125 V 0 25 25 pF 320 C res Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W /mK 0,30 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 2 Ω R gon = 2 Ω t d(off) 15/0 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 12,8 µC Q rFWD = 22,6 µC 4 600 151 25 125 25 125 25 125 25 125 25 125 25 125 53 54 34 38 451 534 47 99 9,606 13,216 8,937 14,185 ns mWs 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Typ Unit Max Static Forward voltage Reverse leakage c urrent 70 VF 1,68 125 1,64 150 1,61 25 1200 Ir 25 V 500 150 µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,48 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech Qr di /dt = 5039 A/µs 15/0 di /dt = 5057 A/µs E rec (di rf/dt )max 5 600 151 25 125 25 125 25 125 25 125 25 125 114 136 277 449 12,848 22,601 5,277 9,671 1012 1434 A ns µC mWs A/µs 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switch Protection Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Typ Unit Max Static Forward voltage VF Reverse leakage c urrent Ir 7,5 25 1,65 125 1,61 25 1200 V 250 150 µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 2,12 K/W Value Unit Rectifier Diode Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max Static Forward voltage VF Reverse leakage c urrent Ir 170 1600 25 1,24 125 1,20 V 25 0,1 150 1,1 µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,49 K/W Value Unit Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] 100 R100=1486 Ω Power dissipation constant Typ Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 6 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 250 I C (A) I C (A) 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE = 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 150 Z t h(j h(j--s)(K/W) I C (A) 100 120 90 10-1 60 0,5 0,2 0,1 0,05 30 0,02 0,01 0,005 0 10-2 0 0 2 4 6 8 10 10-4 12 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= V CE = 0 V 125 °C R th(j-s) = T j: Copyright Vincotech 150 °C 10-1 10 101 t p (s) 102 tp / T 0,30 K/W IGBT thermal model values R th (K/W) 7 3,40E-02 τ (s) 4,78E+00 5,51E-02 1,11E+00 9,56E-02 1,81E-01 9,38E-02 3,74E-02 1,22E-02 3,83E-03 1,25E-02 3,88E-04 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F ) Z th(j-s) = f(t p) 250 Z t h(j h(j--s) (K/W) IF (A) 100 200 150 10-1 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,48 K/W 150 °C FWD thermal model values Copyright Vincotech 8 R (K/W) 3,69E-02 τ (s) 5,23E+00 5,43E-02 1,04E+00 7,93E-02 1,41E-01 1,95E-01 2,94E-02 7,66E-02 8,20E-03 3,87E-02 9,29E-04 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switch Protection Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 25 Z t h(j h(j--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 20 100 15 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 5 0 10-2 0 0,5 1 1,5 2 2,5 3 10-4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 1032 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 2,12 K/W 150 °C FWD thermal model values Copyright Vincotech 9 R (K/W) 7,00E-02 τ (s) 3,23E+00 1,48E-01 4,03E-01 7,34E-01 6,67E-02 5,90E-01 2,04E-02 3,47E-01 4,32E-03 2,36E-01 8,05E-04 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Rectifier Diode Characteristics Typical forwa rd characteristics Rectifier Diode I F = f(V F) Transient thermal impedance as a function of pulse width Rectifier Diode Z th(j-s) = f(t p) 60 0 1 00 50 0 ) W / K ( (K/W) IF (A) ) A ( IF Zth(j-s) )s -j ( h t Zt 40 0 1 0-1 30 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 20 0 10 0 1 0-2 0 0 0,5 1 1,5 2 10 -4 2,5 10-3 10- 2 VF (V) tp = 250 µs 100 10 1 102 t p (s) 25 °C T j: 1 0-1 D= R th(j-s) = 125 °C tp / T 0,49 K/W 150 °C Diode thermal model values 6,58E-02 τ (s) 9,90E+00 1,06E-01 1,36E+00 1,12E-01 2,38E-01 1,47E-01 4,25E-02 6,36E-02 2,17E-02 1,64E-02 2,20E-03 R (K/W) Copyright Vincotech 10 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 11 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) E (mWs) E (mWs) 40 25 Eon 20 Eoff 15 Eon 30 Eo n Eoff Eo n 20 E o ff Eoff 10 10 5 0 0 0 50 100 150 200 250 300 0 I C (A) 25 °C With an induc tive load at 600 V V CE = 15/0 V V GE = R gon = 2 Ω R goff = 2 Ω 125 °C T j: 1 2 3 4 150 °C 151 IC = Figure 3. FWD 5 6 7 8 R g ( Ω) 9 25 °C With an inductive load at 600 V V CE = 15/0 V V GE = T j: 125 °C 150 °C A Figure 4. FWD Typical reverse recovered energy loss as a f unction of collector current Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 12 12 E (mWs) E (mWs) Erec 9 9 Erec Erec 6 6 Erec 3 3 0 0 0 50 100 With an induc tive load at 600 V V CE = V GE = 15/0 V R gon = 2 Ω Copyright Vincotech 150 200 250 I C (A) 0 300 25 °C T j: 1 2 3 With an inductive load at 600 V V CE = 125 °C 150 °C 12 V GE = 15/0 V IC= 151 A 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C 150 °C 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 td(off ) 0,1 td(on) 0,1 td(off ) t ( μ s) t ( μs) 1 td(on) tf tr tf tr 0,01 0,01 0 50 100 150 200 250 300 0 I C (A) (A) With an induc tive load at 125 °C Tj= 600 V V CE = 1 2 3 4 5 6 V GE = 15/0 V V GE = 15/0 V R gon = 2 Ω IC = 151 A R goff = 2 Ω Figure 7. FWD 8 9 r g (Ω) Figure 8. FWD Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,7 0,8 t rr (μs) Typical reverse recovery t ime as a f unction of collector current t rr (μs) 7 With an inductive load at 125 °C Tj= 600 V V CE = trr 0,6 trr 0,6 0,5 0,4 trr trr 0,4 0,3 0,2 0,2 0,1 0 0 0 50 100 150 200 250 300 0 I C (A) At 600 V V GE = 15/0 V R gon = 2 Ω V CE= Copyright Vincotech 2 3 4 5 6 7 8 9 R g on (Ω) 25 °C T j: 1 600 V 125 °C V GE = 15/0 V 150 °C IC= 151 A At 13 V CE = 25 °C T j: 125 °C 150 °C 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 30 Q r (µC) Q r (μ C) Typical recovered charge as a f unction of collector current Qr 25 Qr 25 20 20 15 Qr Qr 15 10 10 5 5 0 At 0 0 50 At V CE = 100 600 150 200 V 250 I C (A) 300 0 25 °C T j: V GE = 15/0 V R gon = 2 Ω At 1 VCE= 2 3 600 V 125 °C V GE = 15/0 V 150 °C I C= 151 A Figure 11. FWD 4 5 6 7 8 9 R g o n (Ω) 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 160 I R M (A) I R M (A) 175 I RM 150 IRM 120 125 IRM 100 80 I RM 75 50 40 25 0 0 0 At 50 100 600 V V GE = 15/0 V R gon = 2 Ω V CE = Copyright Vincotech 150 200 250 I C (A) 0 300 25 °C T j: 1 2 3 600 V 125 °C V GE = 15/0 V 150 °C IC= 151 A At 14 V CE = 4 5 6 7 8 R go n (Ω) 9 25 °C T j: 125 °C 150 °C 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 6000 diF / dt dir r/dt 5000 6000 diF / dt di r r/ dt 5000 4000 4000 3000 3000 2000 2000 1000 1000 0 0 0 50 100 150 200 250 0 300 2 4 At V CE = 600 25 °C V V GE = 15/0 V R gon = 2 Ω T j: 6 8 10 R g o n (Ω) I C (A) At V CE = 600 V 125 °C V GE = 15/0 V 150 °C I C= 151 A Switching Definitions Figure 15. IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 350 I C MAX 300 MODULE 200 Ic 150 100 V CE MAX I c CHIP 250 50 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 2 Ω R goff = 2 Ω Tj = Copyright Vincotech 15 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switching Definitions General conditions = 125 °C = 2Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 2Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 250 125 tdoff % % VCE 100 200 VCE 90% VGE 90% IC 75 150 IC 50 VCE 100 tEoff VGE tdon 25 50 IC 1% VGE 0 -25 -0,1 0,1 0,3 VGE 10% 0,5 0,7 0,9 tEon -50 2,95 1,1 t (µs) VCE 3% IC 10% 0 3,05 3,15 V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 150 A I C (100%) = 150 A t doff = 0,534 µs t don = 0,054 µs t Eoff = Figure 3. 0,881 µs t Eon = Figure 4. 0,331 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of t f 3,25 3,35 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of tr 200 125 fitted % % VCE IC IC 175 100 IC 90% 150 75 125 IC 60% VCE 100 IC 90% 50 IC 40% 75 25 tr 50 IC10% 0 25 tf IC 10% 0 -25 0,3 0,4 0,5 0,6 0,7 -25 0,8 3 t ( µs) 3,05 3,1 3,15 3,2 3,3 3,35 t (µs) V C (100%) = 600 V V C (100%) = 600 I C (100%) = 150 A I C (100%) = 150 A tf= 0,099 µs tr = 0,038 µs Copyright Vincotech 3,25 16 V 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 150 % Poff Eoff 100 % IC 1% Pon 125 Eon 100 75 75 50 50 25 25 VGE 90% 0 tEoff -25 -0,2 VCE 3% VGE 10% 0 0 0,2 0,4 0,6 0,8 -25 2,95 1 tEon 3 3,05 3,1 3,15 t (µs) P off (100%) = 90,29 kW P on (100%) = 90,29 E off (100%) = 14,19 mJ E on (100%) = 13,22 mJ t Eoff = 0,88 µs t Eon = 0,33 µs Figure 7. 3,2 3,25 3,3 3,35 t (µs) kW FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 125 % Id 100 75 trr 50 25 Vd 0 fitted IRRM 10% -25 -50 -75 IRRM 90% IRRM 100% -100 -125 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 3,8 t (µs) V d (100%) = 600 I d (100%) = 150 A I RRM (100%) = -136 A t rr = 0,449 µs Copyright Vincotech V 17 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Brake Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 125 % Id 100 % Qrr Erec 100 75 tQrr 50 tErec 75 25 50 0 Prec -25 25 -50 0 -75 -100 2,8 3 3,2 3,4 3,6 3,8 4 -25 4,2 3 3,2 3,4 3,6 t (µs) 4 4,2 t (µs) I d (100%) = 150 A P rec (100%) = 90,29 kW Q rr (100%) = 22,60 µC E rec (100%) = 9,67 mJ t Qrr = 0,92 µs t Erec = 0,92 µs Copyright Vincotech 3,8 18 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Ordering Code & Marking Version without thermal paste with solder pins Ordering Code 30-F2166BA150RW01-L267G19 NN-NNNNNNNNNNNNNN TTTTTTTVV WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L267G19 in packaging barcode as L267G19 Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTTVV WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y Function 1 70 0 BG 26 9 20,1 R 2 67 0 BS 27 11,8 17,3 R 3 49,8 0 NEG BUS 28 11,8 20,1 R 4 47 0 NEG BUS 29 20,8 17,3 S 5 47 2,8 NEG BUS 30 20,8 20,1 S 6 47 5,6 NEG BUS 31 23,6 17,3 S 7 2,8 0 NEG OUT 32 23,6 20,1 S 8 2,8 2,8 NEG OUT 33 26,4 17,3 S 9 2,8 5,6 NEG OUT 34 26,4 20,1 S 10 5,6 0 NEG OUT 35 35,4 17,4 T 11 0 0 NEG OUT 36 35,4 20,2 T 12 0 2,8 NEG OUT 37 38,2 17,4 T 13 0 5,6 NEG OUT 38 38,2 20,2 T 14 0 8,4 NEG OUT 39 41 17,4 T 15 0 27,6 POS OUT 40 41 20,2 T 16 0 30,4 POS OUT 41 47 30,4 POS BUS 17 0 33,2 POS OUT 42 47 33,2 POS BUS 18 0 36 POS OUT 43 47 36 POS BUS 19 2,8 27,6 POS OUT 44 61,6 22,85 BR 20 2,8 30,4 POS OUT 45 64,4 22,85 BR 21 2,8 33,2 POS OUT 46 67,2 22,85 BR 22 2,8 36 POS OUT 47 70 22,85 BR 23 6,2 16,45 24 6,2 19,25 R R 48 49 64,2 70,6 36,55 36,55 NTC1 NTC2 25 9 17,3 R Copyright Vincotech 19 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Pinout Identification ID Component Voltage Current Function T1-a, T1-b IGBT 1200V 150A Brake Switch D7-a, D7-b FWD 1200V 70A Brake Diode D8 Rectifier 1200V 7,5A Brake Sw. Protection Diode D1-D6 Rectifier 1600V 170A Rectifier Diode Rt NTC - - Thermistor Copyright Vincotech 20 Comment 05 Nov. 2015 / Revision 2 30-F2166BA150RW01-L267G19 datasheet Packaging instruction Standard packaging quantity (SPQ) 42 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 2 packages see vincotech.com website. Package data Package data for flow 2 packages see vincotech.com website. Document No.: Date: Modification: Pages 30-F2166BA150RW01-L267G19-D2-14 05 Nov. 2015 Outline correction 19 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 21 05 Nov. 2015 / Revision 2