V23990 P829 F08x D1 14

V23990-P829-F08x-PM
datasheet
flow PACK 1 3rd gen
1200 V / 50 A
Features
●
●
●
●
●
flow 1 12mm housing
Compact flow 1 housing
Trench Fieldstop IGBT4 technology
Compact and low inductance design
AlN substrate for improved performance
Built-in NTC
solder pins
Press-fit pins
Schematic
Target applications
● Motor Drive
● Power generation
● UPS
Types
● V23990-P829-F08-PM
● V23990-P829-F08Y-PM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
71
A
150
A
216
W
±20
V
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
Short circuit ratings
Maximum Junction Temperature
Copyright Vincotech
T s = 80 °C
T s = 80 °C
t SC
Tj ≤ 150°C
10
µs
V CC
VGE = 15V
800
V
175
°C
T jmax
1
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Parameter
Symbol
Conditions
Value
Unit
1200
V
65
A
100
A
146
W
175
°C
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T s = 80°C
T j = T jmax
T s = 80°C
Symbol
Conditions
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching
condition
T jop
-40…+(T jmax - 25)
°C
4000
V
min. 12,5
mm
7,81 / 7,9
mm
Isolation Properties
Isolation voltage
V isol
DC Voltage
t p=2s
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
solder pins / Press-fit pins
> 200
CTI
2
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Characteristic Values
Inverter Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C]
Unit
Min
Typ
Max
5,3
5,8
6,3
1,58
1,88
2,07
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE=V CE
0,0017
25
125
25
15
50
125
150
Collec tor-emitter c ut-off current
I CES
0
1200
Gate-emitter leakage c urrent
I GES
20
0
Internal gate resistance
Input capacitance
1
125
25
120
125
4
µA
nA
Ω
2800
C ies
f=1MHz
Reverse transfer capac itance
V
2,30
25
rg
V
0
25
25
pF
100
C res
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
0,44
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 8 Ω
R gon = 8 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 4,8 µC
Q rFWD = 9,7 µC
3
600
50
25
150
25
150
25
150
25
150
25
150
25
150
96
101
17
24
214
281
87
122
2,701
4,211
2,744
4,531
ns
mWs
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,73
2,05
125
1,70
150
1,68
Static
Forward voltage
Reverse leakage c urrent
50
VF
25
1200
Ir
V
10
150
µA
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ = 3,4 W /mK
0,65
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
di /dt = 3866 A/µs
±15
di /dt = 2820 A/µs
600
50
E rec
(di rf/dt )max
25
150
25
150
25
150
25
150
25
150
81
85
139
316
4,797
9,708
1,790
3,972
4803
1209
A
ns
µC
mWs
A/µs
Thermistor
Parameter
Symbol
Conditions
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
Value
R100=401 Ω
100
Power dissipation constant
Typ
Unit
Max
4,7
-12,4
kΩ
12,4
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3590
K
B-value
B(25/100)
25
3650
K
Vincotech NTC Reference
Copyright Vincotech
D
4
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
150
I C (A)
I C (A)
150
120
120
90
90
60
60
30
30
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
V GE =
15
V
T j:
25 °C
tp =
250
150 °C
Tj =
150
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
50
Z t h(j
h(j--s)(K/W)
I C (A)
100
40
10-1
30
20
0,5
10-2
0,2
0,1
0,05
10
0,02
0,01
0,005
0
10-3
10-5
0
0
2
4
6
8
10
12
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25 °C
D =
150 °C
R th(j-s) =
10-1
100
101
t p (s)
102
tp / T
0,44
K/W
IGBT thermal model values
Copyright Vincotech
5
R (K/W)
9,12E-02
τ (s)
6,01E-01
1,84E-01
8,26E-02
9,04E-02
2,81E-02
4,02E-02
2,85E-03
3,41E-02
4,57E-04
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
I F = f(V F)
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s) (K/W)
IF (A)
101
120
100
90
60
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
30
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,65
K/W
150 °C
FWD thermal model values
R (K/W)
2,1630E-02
τ (s)
5,6310E+00
7,4790E-02
7,7120E-01
1,3890E-01
1,1610E-01
2,2410E-01
3,1460E-02
7,3190E-02
6,5550E-03
5,9880E-02
1,5650E-03
5,8730E-02
3,6760E-04
Thermistor
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
5000
4000
3000
2000
1000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
6
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unction of collector current
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(I C)
E = f(rg)
E ( mWs)
E (mWs)
10
Eon
8
10
Eon
8
Eoff
6
Eon
6
Eo n
E o ff
Eoff
4
4
2
2
Eoff
0
0
0
20
40
60
80
100
0
I C (A)
25 °C
With an induc tive load at
600
V
V CE =
±15
V
V GE =
R gon =
8
Ω
R goff =
8
Ω
T j:
8
16
IC =
Figure 3.
FWD
50
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
E (mWs)
6
Erec
40
A
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E (mWs)
R g ( Ω)
150 °C
T j:
Typical reverse recovered energy loss as a f unction of collector current
5
32
25 °C
With an inductive load at
600
V
V CE =
±15
V
V GE =
150 °C
24
5
4
Erec
4
3
3
2
Erec
2
Erec
1
1
0
0
0
20
40
With an induc tive load at
600
V
V CE =
±15
V
V GE =
R gon =
8
Copyright Vincotech
60
80
I C (A)
0
100
25 °C
T j:
8
16
With an inductive load at
600
V
V CE =
±15
V
V GE =
150 °C
Ω
IC=
7
50
24
32
r g (Ω)
40
25 °C
T j:
150 °C
A
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collector current
Typical swit ching t imes as a f unct ion of gate resistor
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
td(on)
td(off )
tf
tf
0,1
0,1
td(on)
tr
tr
0,01
0,01
0
20
40
60
80
100
0
I C (A)
(A)
With an induc tive load at
150
°C
Tj=
600
V
V CE =
8
16
24
32
40
With an inductive load at
150
°C
Tj=
600
V
V CE =
V GE =
±15
V
V GE =
R gon =
8
Ω
IC =
R goff =
8
Ω
Figure 7.
FWD
±15
V
50
A
Figure 8.
FWD
Typical reverse recovery t ime as a f unction of collector current
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,4
t rr (μs)
t r r (μs)
0,8
trr
trr
0,3
0,6
0,2
0,4
trr
trr
0,1
0,2
0
0
0
20
40
60
80
100
0
I C (A)
At
r g (Ω)
600
V
V GE =
±15
V
R gon =
8
Ω
V CE=
Copyright Vincotech
16
24
32
40
R g on (Ω)
25 °C
T j:
8
At
150 °C
V CE =
V GE =
IC=
8
600
V
±15
V
50
A
25 °C
T j:
150 °C
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
16
Q r (µC)
Q r (μ C)
Typical recovered charge as a f unction of collector current
12
Qr
Qr
12
9
8
6
Qr
Qr
4
3
0
At
0
0
20
40
60
80
100
0
8
16
24
32
40
R g o n (Ω)
I C (A)
600
V
V GE =
±15
V
R gon =
8
Ω
V CE =
At
25 °C
T j:
At
VCE=
150 °C
V GE =
I C=
Figure 11.
FWD
600
V
±15
V
50
A
25 °C
T j:
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
120
I R M (A)
I R M (A)
160
I RM
IRM
90
120
60
80
30
40
IRM
IRM
IRM
I RM
0
0
0
At
20
40
600
V
V GE =
±15
V
R gon =
8
Ω
V CE =
Copyright Vincotech
60
80
I C (A)
0
100
16
24
32
40
R g o n (Ω)
25 °C
T j:
8
At
150 °C
V CE =
V GE =
IC=
9
600
V
±15
V
50
A
25 °C
T j:
150 °C
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
15000
6000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F / dt
di r r /dt
5000
diF / dt
di r r/ dt
12000
4000
9000
3000
6000
2000
3000
1000
0
0
0
20
40
60
80
0
100
8
16
24
32
I C (A)
600
V
V GE =
±15
V
R gon =
8
Ω
At
V CE =
25 °C
T j:
At
150 °C
V CE =
V GE =
I C=
Figure 15.
600
V
±15
V
50
A
40
R g o n (Ω)
25 °C
T j:
150 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
120
I C MAX
I c CHIP
100
80
MODULE
60
V CE MAX
Ic
40
20
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
8
Ω
R goff =
8
Ω
Tj =
Copyright Vincotech
10
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switching Definitions
General conditions
=
150 °C
=
8Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
8Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
140
300
%
%
120
tdoff
IC
250
VCE
100
200
VCE 90%
VGE 90%
80
150
IC
VGE
60
VCE
100
VGE
40
tdon
tEoff
50
20
VGE 10%
IC 1%
VCE 3%
IC 10%
0
0
tEon
-20
-0,11
0,04
0,19
0,34
0,49
0,64
-50
2,85
0,79
2,94
3,03
3,12
3,21
3,3
3,39
t (µs)
3,48
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
50
A
I C (100%) =
t doff =
0,281
µs
t don =
0,101
µs
t Eoff =
Figure 3.
0,710
µs
t Eon =
Figure 4.
0,345
µs
V GE (0%) =
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
50
A
V GE (0%) =
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tr
125
300
fitted
%
%
VCE
IC
IC
250
100
IC 90%
200
75
IC 60%
150
50
VCE
IC 40%
100
tr
25
IC 90%
50
IC10%
0
IC 10%
0
tf
-25
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0,45
0,5
0,55
-50
0,6
2,9
t ( µs)
V C (100%) =
600
3
3,1
3,2
V C (100%) =
600
3,4
V
I C (100%) =
50
A
I C (100%) =
50
A
tf=
0,122
µs
tr =
0,024
µs
Copyright Vincotech
3,3
t (µs)
V
11
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
250
%
Poff
100
%
IC 1%
Eoff
Pon
200
75
150
50
100
Eon
25
50
VGE 90%
VCE 3%
VGE 10%
0
0
tEoff
tEon
-25
-0,1
0,05
0,2
0,35
0,5
0,65
-50
2,95
0,8
3,04
3,13
3,22
P off (100%) =
30,10
kW
P on (100%) =
30,10
kW
E off (100%) =
4,53
mJ
E on (100%) =
4,21
mJ
t Eoff =
0,71
µs
t Eon =
0,345
µs
Figure 7.
3,31
3,4
t ( µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
Id
100
trr
50
0
Vd
IRRM 10%
-50
fitted
-100
IRRM 90%
IRRM 100%
-150
-200
2,9
3
3,1
3,2
3,3
3,4
3,5
3,6
3,7
t (µs)
V d (100%) =
600
V
I d (100%) =
50
A
I RRM (100%) =
-85
A
t rr =
0,316
µs
Copyright Vincotech
12
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
100
100
Erec
Qrr
Id
50
tQrr
tErec
75
0
Prec
50
-50
25
-100
0
-150
-200
2,8
3
3,2
3,4
3,6
3,8
4
4,2
-25
4,4
2,8
t (µs)
3
3,2
3,4
3,6
I d (100%) =
50
A
P rec (100%) =
30,10
kW
9,71
µC
E rec (100%) =
3,97
mJ
t Qrr =
0,63
µs
t Erec =
0,63
µs
Copyright Vincotech
4
4,2
4,4
t (µs)
Q rr (100%) =
125°C
3,8
25
25 ooC
C
25°C
13
125
125 ooCC
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Ordering Code & Marking
Without thermal paste
With thermal paste 12
Without thermal paste
With thermal paste 12
Version
12 mm housing solder pins
mm housing solder pins
12 mm housing Press-fit pins
mm housing Press-fit pins
Ordering Code
V23990-P829-F08-PM
V23990-P829-F08-/3/-PM
V23990-P829-F08Y-PM
V23990-P829-F08Y-/3/-PM
Vinco WWYY
TTTTTTTVV UL
LLLLL SSSS
Text
Datamatrix
Vinco
Date code
Name&Ver
UL
Lot
Serial
Vinco
WWYY
TTTTTTTVV
UL
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
Function
1
52,6
0
30
52,6
14,65
DC+
2
49,9
0
DCDC-
31
49,9
14,65
DC+
3
42,65
0
G6
4
39,65
0
S6
5
35,15
0
NTC1
6
28,4
0
NTC2
7
24
0
G4
8
21
0
S4
9
12,2
0
G2
10
9,2
0
S2
11
12
13
2,7
0
0
0
0
14,65
DCDCDC+
14
2,7
14,65
DC+
15
0
28,6
U
16
2,7
28,6
U
17
5,4
28,6
U
18
9,6
28,6
S1
19
12,6
28,6
G1
20
19,6
28,6
V
21
22,3
28,6
V
22
25
28,6
V
23
29,7
28,6
S3
24
32,7
28,6
G3
25
39,7
28,6
S5
26
42,7
28,6
G5
27
47,2
28,6
W
28
49,9
28,6
W
29
52,6
28,6
W
Copyright Vincotech
14
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1,T2,T3,T4,T5,T6
IGBT
1200 V
50 A
Inverter Switch
D1,D2,D3,D4,D5,D6
FWD
1200 V
50 A
Inverter Diode
NTC
NTC
-
-
Thermistor
Copyright Vincotech
15
Comment
27 Nov. 2015 / Revision 1
V23990-P829-F08x-PM
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
V23990-P829-F08x-D1-14
27 Nov. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
27 Nov. 2015 / Revision 1