V23990-P829-F08x-PM datasheet flow PACK 1 3rd gen 1200 V / 50 A Features ● ● ● ● ● flow 1 12mm housing Compact flow 1 housing Trench Fieldstop IGBT4 technology Compact and low inductance design AlN substrate for improved performance Built-in NTC solder pins Press-fit pins Schematic Target applications ● Motor Drive ● Power generation ● UPS Types ● V23990-P829-F08-PM ● V23990-P829-F08Y-PM Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 71 A 150 A 216 W ±20 V Inverter Switch Collector-emitter voltage Collector current V CES IC T j = T jmax Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES Short circuit ratings Maximum Junction Temperature Copyright Vincotech T s = 80 °C T s = 80 °C t SC Tj ≤ 150°C 10 µs V CC VGE = 15V 800 V 175 °C T jmax 1 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Parameter Symbol Conditions Value Unit 1200 V 65 A 100 A 146 W 175 °C Value Unit Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T s = 80°C T j = T jmax T s = 80°C Symbol Conditions Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V min. 12,5 mm 7,81 / 7,9 mm Isolation Properties Isolation voltage V isol DC Voltage t p=2s Creepage distance Clearance Comparative Tracking Index Copyright Vincotech solder pins / Press-fit pins > 200 CTI 2 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Characteristic Values Inverter Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] T j[ °C] Unit Min Typ Max 5,3 5,8 6,3 1,58 1,88 2,07 Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE=V CE 0,0017 25 125 25 15 50 125 150 Collec tor-emitter c ut-off current I CES 0 1200 Gate-emitter leakage c urrent I GES 20 0 Internal gate resistance Input capacitance 1 125 25 120 125 4 µA nA Ω 2800 C ies f=1MHz Reverse transfer capac itance V 2,30 25 rg V 0 25 25 pF 100 C res Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ =3,4W /mK 0,44 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 8 Ω R gon = 8 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 4,8 µC Q rFWD = 9,7 µC 3 600 50 25 150 25 150 25 150 25 150 25 150 25 150 96 101 17 24 214 281 87 122 2,701 4,211 2,744 4,531 ns mWs 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,73 2,05 125 1,70 150 1,68 Static Forward voltage Reverse leakage c urrent 50 VF 25 1200 Ir V 10 150 µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK 0,65 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr di /dt = 3866 A/µs ±15 di /dt = 2820 A/µs 600 50 E rec (di rf/dt )max 25 150 25 150 25 150 25 150 25 150 81 85 139 316 4,797 9,708 1,790 3,972 4803 1209 A ns µC mWs A/µs Thermistor Parameter Symbol Conditions V GE [V] Rated resistance ΔR/R Power dissipation P I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] Value R100=401 Ω 100 Power dissipation constant Typ Unit Max 4,7 -12,4 kΩ 12,4 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3590 K B-value B(25/100) 25 3650 K Vincotech NTC Reference Copyright Vincotech D 4 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 150 I C (A) I C (A) 150 120 120 90 90 60 60 30 30 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V T j: 25 °C tp = 250 150 °C Tj = 150 V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 50 Z t h(j h(j--s)(K/W) I C (A) 100 40 10-1 30 20 0,5 10-2 0,2 0,1 0,05 10 0,02 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10 12 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 150 °C R th(j-s) = 10-1 100 101 t p (s) 102 tp / T 0,44 K/W IGBT thermal model values Copyright Vincotech 5 R (K/W) 9,12E-02 τ (s) 6,01E-01 1,84E-01 8,26E-02 9,04E-02 2,81E-02 4,02E-02 2,85E-03 3,41E-02 4,57E-04 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F) Z th(j-s) = f(t p) 150 Z t h(j h(j--s) (K/W) IF (A) 101 120 100 90 60 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 30 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,65 K/W 150 °C FWD thermal model values R (K/W) 2,1630E-02 τ (s) 5,6310E+00 7,4790E-02 7,7120E-01 1,3890E-01 1,1610E-01 2,2410E-01 3,1460E-02 7,3190E-02 6,5550E-03 5,9880E-02 1,5650E-03 5,8730E-02 3,6760E-04 Thermistor Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 5000 4000 3000 2000 1000 0 25 50 75 100 125 T (°C) Copyright Vincotech 6 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) E ( mWs) E (mWs) 10 Eon 8 10 Eon 8 Eoff 6 Eon 6 Eo n E o ff Eoff 4 4 2 2 Eoff 0 0 0 20 40 60 80 100 0 I C (A) 25 °C With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 8 Ω R goff = 8 Ω T j: 8 16 IC = Figure 3. FWD 50 Figure 4. FWD E rec = f(I c) E rec = f(r g ) E (mWs) 6 Erec 40 A Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) R g ( Ω) 150 °C T j: Typical reverse recovered energy loss as a f unction of collector current 5 32 25 °C With an inductive load at 600 V V CE = ±15 V V GE = 150 °C 24 5 4 Erec 4 3 3 2 Erec 2 Erec 1 1 0 0 0 20 40 With an induc tive load at 600 V V CE = ±15 V V GE = R gon = 8 Copyright Vincotech 60 80 I C (A) 0 100 25 °C T j: 8 16 With an inductive load at 600 V V CE = ±15 V V GE = 150 °C Ω IC= 7 50 24 32 r g (Ω) 40 25 °C T j: 150 °C A 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(on) td(off ) tf tf 0,1 0,1 td(on) tr tr 0,01 0,01 0 20 40 60 80 100 0 I C (A) (A) With an induc tive load at 150 °C Tj= 600 V V CE = 8 16 24 32 40 With an inductive load at 150 °C Tj= 600 V V CE = V GE = ±15 V V GE = R gon = 8 Ω IC = R goff = 8 Ω Figure 7. FWD ±15 V 50 A Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,4 t rr (μs) t r r (μs) 0,8 trr trr 0,3 0,6 0,2 0,4 trr trr 0,1 0,2 0 0 0 20 40 60 80 100 0 I C (A) At r g (Ω) 600 V V GE = ±15 V R gon = 8 Ω V CE= Copyright Vincotech 16 24 32 40 R g on (Ω) 25 °C T j: 8 At 150 °C V CE = V GE = IC= 8 600 V ±15 V 50 A 25 °C T j: 150 °C 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 16 Q r (µC) Q r (μ C) Typical recovered charge as a f unction of collector current 12 Qr Qr 12 9 8 6 Qr Qr 4 3 0 At 0 0 20 40 60 80 100 0 8 16 24 32 40 R g o n (Ω) I C (A) 600 V V GE = ±15 V R gon = 8 Ω V CE = At 25 °C T j: At VCE= 150 °C V GE = I C= Figure 11. FWD 600 V ±15 V 50 A 25 °C T j: 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 120 I R M (A) I R M (A) 160 I RM IRM 90 120 60 80 30 40 IRM IRM IRM I RM 0 0 0 At 20 40 600 V V GE = ±15 V R gon = 8 Ω V CE = Copyright Vincotech 60 80 I C (A) 0 100 16 24 32 40 R g o n (Ω) 25 °C T j: 8 At 150 °C V CE = V GE = IC= 9 600 V ±15 V 50 A 25 °C T j: 150 °C 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 15000 6000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current di F / dt di r r /dt 5000 diF / dt di r r/ dt 12000 4000 9000 3000 6000 2000 3000 1000 0 0 0 20 40 60 80 0 100 8 16 24 32 I C (A) 600 V V GE = ±15 V R gon = 8 Ω At V CE = 25 °C T j: At 150 °C V CE = V GE = I C= Figure 15. 600 V ±15 V 50 A 40 R g o n (Ω) 25 °C T j: 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 120 I C MAX I c CHIP 100 80 MODULE 60 V CE MAX Ic 40 20 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 8 Ω R goff = 8 Ω Tj = Copyright Vincotech 10 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switching Definitions General conditions = 150 °C = 8Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 8Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 140 300 % % 120 tdoff IC 250 VCE 100 200 VCE 90% VGE 90% 80 150 IC VGE 60 VCE 100 VGE 40 tdon tEoff 50 20 VGE 10% IC 1% VCE 3% IC 10% 0 0 tEon -20 -0,11 0,04 0,19 0,34 0,49 0,64 -50 2,85 0,79 2,94 3,03 3,12 3,21 3,3 3,39 t (µs) 3,48 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 50 A I C (100%) = t doff = 0,281 µs t don = 0,101 µs t Eoff = Figure 3. 0,710 µs t Eon = Figure 4. 0,345 µs V GE (0%) = -15 V V GE (100%) = 15 V V C (100%) = 600 V 50 A V GE (0%) = IGBT Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 125 300 fitted % % VCE IC IC 250 100 IC 90% 200 75 IC 60% 150 50 VCE IC 40% 100 tr 25 IC 90% 50 IC10% 0 IC 10% 0 tf -25 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 0,55 -50 0,6 2,9 t ( µs) V C (100%) = 600 3 3,1 3,2 V C (100%) = 600 3,4 V I C (100%) = 50 A I C (100%) = 50 A tf= 0,122 µs tr = 0,024 µs Copyright Vincotech 3,3 t (µs) V 11 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 250 % Poff 100 % IC 1% Eoff Pon 200 75 150 50 100 Eon 25 50 VGE 90% VCE 3% VGE 10% 0 0 tEoff tEon -25 -0,1 0,05 0,2 0,35 0,5 0,65 -50 2,95 0,8 3,04 3,13 3,22 P off (100%) = 30,10 kW P on (100%) = 30,10 kW E off (100%) = 4,53 mJ E on (100%) = 4,21 mJ t Eoff = 0,71 µs t Eon = 0,345 µs Figure 7. 3,31 3,4 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 0 Vd IRRM 10% -50 fitted -100 IRRM 90% IRRM 100% -150 -200 2,9 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 t (µs) V d (100%) = 600 V I d (100%) = 50 A I RRM (100%) = -85 A t rr = 0,316 µs Copyright Vincotech 12 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % 100 100 Erec Qrr Id 50 tQrr tErec 75 0 Prec 50 -50 25 -100 0 -150 -200 2,8 3 3,2 3,4 3,6 3,8 4 4,2 -25 4,4 2,8 t (µs) 3 3,2 3,4 3,6 I d (100%) = 50 A P rec (100%) = 30,10 kW 9,71 µC E rec (100%) = 3,97 mJ t Qrr = 0,63 µs t Erec = 0,63 µs Copyright Vincotech 4 4,2 4,4 t (µs) Q rr (100%) = 125°C 3,8 25 25 ooC C 25°C 13 125 125 ooCC 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Ordering Code & Marking Without thermal paste With thermal paste 12 Without thermal paste With thermal paste 12 Version 12 mm housing solder pins mm housing solder pins 12 mm housing Press-fit pins mm housing Press-fit pins Ordering Code V23990-P829-F08-PM V23990-P829-F08-/3/-PM V23990-P829-F08Y-PM V23990-P829-F08Y-/3/-PM Vinco WWYY TTTTTTTVV UL LLLLL SSSS Text Datamatrix Vinco Date code Name&Ver UL Lot Serial Vinco WWYY TTTTTTTVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y Function 1 52,6 0 30 52,6 14,65 DC+ 2 49,9 0 DCDC- 31 49,9 14,65 DC+ 3 42,65 0 G6 4 39,65 0 S6 5 35,15 0 NTC1 6 28,4 0 NTC2 7 24 0 G4 8 21 0 S4 9 12,2 0 G2 10 9,2 0 S2 11 12 13 2,7 0 0 0 0 14,65 DCDCDC+ 14 2,7 14,65 DC+ 15 0 28,6 U 16 2,7 28,6 U 17 5,4 28,6 U 18 9,6 28,6 S1 19 12,6 28,6 G1 20 19,6 28,6 V 21 22,3 28,6 V 22 25 28,6 V 23 29,7 28,6 S3 24 32,7 28,6 G3 25 39,7 28,6 S5 26 42,7 28,6 G5 27 47,2 28,6 W 28 49,9 28,6 W 29 52,6 28,6 W Copyright Vincotech 14 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Pinout Identification ID Component Voltage Current Function T1,T2,T3,T4,T5,T6 IGBT 1200 V 50 A Inverter Switch D1,D2,D3,D4,D5,D6 FWD 1200 V 50 A Inverter Diode NTC NTC - - Thermistor Copyright Vincotech 15 Comment 27 Nov. 2015 / Revision 1 V23990-P829-F08x-PM datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: V23990-P829-F08x-D1-14 27 Nov. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 27 Nov. 2015 / Revision 1