STP100NF04 STB100NF04, STB100NF04-1 N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET AUTOMOTIVE SPECIFIC ■ ■ ■ TYPE VDSS RDS(on) ID Pw STP100NF04 STB100NF04 STB100NF04-1 40 V 40 V 40 V < 0.0046 Ω < 0.0046 Ω <0.0046 Ω 120 A 120 A 120 A 300 W 300 W 300 W TYPICAL RDS(on) = 0.0043 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED 12 3 I2PAK TO-220 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ SOLENOID AND RELAY DRIVERS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP100NF04 P100NF04 TO-220 TUBE STB100NF04T4 B100NF04 D2PAK TAPE & REEL STB100NF04-1 B100NF04 I2PAK TUBE February 2002 1/15 STP100NF04, STB100NF04, STB100NF04-1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 40 V Drain-gate Voltage (RGS = 20 kΩ) 40 V VGS Gate- source Voltage ± 20 V ID (#) Drain Current (continuos) at TC = 25°C 120 A ID Drain Current (continuos) at TC = 100°C 120 A Drain Current (pulsed) 480 A Total Dissipation at TC = 25°C IDM (l) PTOT 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns EAS (2) Single Pulse Avalanche Energy 1.2 J Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 °C (l) Pulse width limited by safe operating area (1) I SD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting T j = 25°C, I d = 60A, VDD=30 V (#) Current Limited by Package THERMAL DATA TO-220 / I2PAK / D2PAK Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max See Curve on page 6 °C/W Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 50 A V(BR)DSS 2/15 Min. Typ. Max. 40 Unit V 2 0.0043 1 10 µA µA ±100 nA 4 V 0.0046 Ω STP100NF04, STB100NF04, STB100NF04-1 ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 50 A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 150 S 5100 1300 160 pF pF pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 20 V, ID = 60 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 35 220 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 32V, ID = 120 A, VGS = 10V (see, Figure 4) 110 35 35 150 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 20 V, ID = 60 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 80 50 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 120 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 75 185 5 Max. Unit 120 480 A A 1.3 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/15 STP100NF04, STB100NF04, STB100NF04-1 Power Derating vs Tc Max Id Current vs Tc Output Characteristics Transfer Characteristics Transconductance 4/15 Static Drain-source On Resistance STP100NF04, STB100NF04, STB100NF04-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown voltage vs Temperature 5/15 STP100NF04, STB100NF04, STB100NF04-1 Thermal Resistance Rthj-a vs PCB Copper Area Safe Operating Area Thermal Impedance 6/15 Max Power Dissipation vs PCB Copper Area STP100NF04, STB100NF04, STB100NF04-1 Allowable Iav vs. Time in Avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To derate above 25 °C, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE) / (1.3 * BV DSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV. 7/15 STP100NF04, STB100NF04, STB100NF04-1 SPICE THERMAL MODEL 8/15 Parameter Node Value CTHERM1 5-4 0.011 CTHERM2 4-3 0.0012 CTHERM3 3-2 0.05 CTHERM4 2-1 0.1 RTHERM1 5-4 0.09 RTHERM2 4-3 0.02 RTHERM3 3-2 0.11 RTHERM4 2-1 0.17 STP100NF04, STB100NF04, STB100NF04-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 3.1: Inductive Load Switching And Diode Recovery Times Waveform Fig. 4: Gate Charge test Circuit Fig. 4.1: Gate Charge test Waveform 9/15 STP100NF04, STB100NF04, STB100NF04-1 Fig. 5: Test Circuit For Diode Recovery Times 10/15 Fig. 5.1: Diode Recovery Times Waveform STP100NF04, STB100NF04, STB100NF04-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 11/15 STP100NF04, STB100NF04, STB100NF04-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 12/15 1 STP100NF04, STB100NF04, STB100NF04-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 13/15 STP100NF04, STB100NF04, STB100NF04-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. inch MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/15 0.933 0.956 inch MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP100NF04, STB100NF04, STB100NF04-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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