STMICROELECTRONICS STB100NF04

STP100NF04
STB100NF04, STB100NF04-1
N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
■
■
■
TYPE
VDSS
RDS(on)
ID
Pw
STP100NF04
STB100NF04
STB100NF04-1
40 V
40 V
40 V
< 0.0046 Ω
< 0.0046 Ω
<0.0046 Ω
120 A
120 A
120 A
300 W
300 W
300 W
TYPICAL RDS(on) = 0.0043 Ω
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
12
3
I2PAK
TO-220
3
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable manufacturing reproducibility.
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP100NF04
P100NF04
TO-220
TUBE
STB100NF04T4
B100NF04
D2PAK
TAPE & REEL
STB100NF04-1
B100NF04
I2PAK
TUBE
February 2002
1/15
STP100NF04, STB100NF04, STB100NF04-1
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
40
V
Drain-gate Voltage (RGS = 20 kΩ)
40
V
VGS
Gate- source Voltage
± 20
V
ID (#)
Drain Current (continuos) at TC = 25°C
120
A
ID
Drain Current (continuos) at TC = 100°C
120
A
Drain Current (pulsed)
480
A
Total Dissipation at TC = 25°C
IDM (l)
PTOT
300
W
Derating Factor
2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
EAS (2)
Single Pulse Avalanche Energy
1.2
J
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 175
°C
(l) Pulse width limited by safe operating area
(1) I SD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting T j = 25°C, I d = 60A, VDD=30 V
(#) Current Limited by Package
THERMAL DATA
TO-220 / I2PAK / D2PAK
Rthj-case
Thermal Resistance Junction-case Max
0.5
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
See Curve on page 6
°C/W
Rthj-amb
Thermal Resistance Junction-ambient (Free air) Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 50 A
V(BR)DSS
2/15
Min.
Typ.
Max.
40
Unit
V
2
0.0043
1
10
µA
µA
±100
nA
4
V
0.0046
Ω
STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS = 15 V, ID = 50 A
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
Max.
Unit
150
S
5100
1300
160
pF
pF
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 20 V, ID = 60 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
35
220
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 32V, ID = 120 A,
VGS = 10V
(see, Figure 4)
110
35
35
150
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
VDD = 20 V, ID = 60 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
80
50
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 120 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 120 A, di/dt = 100A/µs
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
75
185
5
Max.
Unit
120
480
A
A
1.3
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/15
STP100NF04, STB100NF04, STB100NF04-1
Power Derating vs Tc
Max Id Current vs Tc
Output Characteristics
Transfer Characteristics
Transconductance
4/15
Static Drain-source On Resistance
STP100NF04, STB100NF04, STB100NF04-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown voltage vs Temperature
5/15
STP100NF04, STB100NF04, STB100NF04-1
Thermal Resistance Rthj-a vs PCB Copper Area
Safe Operating Area
Thermal Impedance
6/15
Max Power Dissipation vs PCB Copper Area
STP100NF04, STB100NF04, STB100NF04-1
Allowable Iav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 °C, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE) / (1.3 * BV DSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.
7/15
STP100NF04, STB100NF04, STB100NF04-1
SPICE THERMAL MODEL
8/15
Parameter
Node
Value
CTHERM1
5-4
0.011
CTHERM2
4-3
0.0012
CTHERM3
3-2
0.05
CTHERM4
2-1
0.1
RTHERM1
5-4
0.09
RTHERM2
4-3
0.02
RTHERM3
3-2
0.11
RTHERM4
2-1
0.17
STP100NF04, STB100NF04, STB100NF04-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 3.1: Inductive Load Switching And Diode Recovery Times Waveform
Fig. 4: Gate Charge test Circuit
Fig. 4.1: Gate Charge test Waveform
9/15
STP100NF04, STB100NF04, STB100NF04-1
Fig. 5: Test Circuit For Diode Recovery Times
10/15
Fig. 5.1: Diode Recovery Times Waveform
STP100NF04, STB100NF04, STB100NF04-1
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
11/15
STP100NF04, STB100NF04, STB100NF04-1
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
12/15
1
STP100NF04, STB100NF04, STB100NF04-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
13/15
STP100NF04, STB100NF04, STB100NF04-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
inch
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
14/15
0.933 0.956
inch
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP100NF04, STB100NF04, STB100NF04-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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