V23990-K430-F60-PM datasheet MiniSkiiP®PACK 3 1200 V / 150 A Features MiniSkiiP® 3 housing ● Solderless interconnection ● Mitsubishi Generation 6.1 technology Schematic Target applications ● Servo Drives ● Industrial Motor Drives ● UPS Types ● V23990-K430-F60 Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 114 A t p limited by T jmax 600 A Tj ≤ 125°C, VCE ≤ 1200 V 600 A 212 W Inverter Switch Collector-emitter voltage Collector current Repetitive peak collector current V CES IC I CRM Turn off safe operating area T j = T jmax T S =80 °C Total power dissipation P tot Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech T j = T jmax 1 T S =80 °C 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Parameter Conditions Symbol Value Unit 1200 V 95 A 300 A 160 W 175 °C Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T h = 80°C T j = T jmax T h = 80°C Conditions Symbol Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Isolation Properties Isolation voltage Comparative Tracking Index Copyright Vincotech V isol DC voltage t p=2s >200 CTI 2 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Characteristic Values TParameter j= Symbol Conditions Inverter Switch V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,4 6 6,6 1,73 2,15 Static Gate-emitter threshold voltage V GE(th) V GE=V CE Collec tor-emitter saturation voltage V CEsat 0,003 25 125 25 15 150 Collec tor-emitter cut-off c urrent I CES 0 1200 Gate-emitter leakage current I GES 20 0 Internal gate resistance 1,35 125 2,01 150 2,07 25 0,86 1000 125 rg 6,5 Input capacitance C ies 30000 Output capacitance C oes Reverse transfer c apac itanc e C res f=1 MHz 0 V 125 25 25 25 6000 V µA nA Ω pF 500 Thermal Thermal resistanc e junction to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W /mK 0,45 K/W IGBT Switching Turn-on delay time t d(on) R goff = 2 Ω Rise time Turn-off delay time tr R gon = 2 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 11,3 µC Q rFWD = 24,6 µC Q rFWD = 28,2 µC 3 600 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 77 77 77 8 10 10 154 188 200 44 75 95 3,327 6,444 7,460 7,912 11,452 12,488 ns mWs 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Parameter Symbol Conditions Inverter Diode Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,65 3,3 125 2,33 150 2,21 Static Forward voltage Reverse leakage current 150 VF 25 1200 Ir V 50 150 µA Thermal Thermal resistanc e junction to sink R th(j-s) Thermal grease thickness≤50um λ = 1 W/mK 0,60 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 12743 A/µs di /dt = 10162 A/µs±15 di /dt = 10901 A/µs 600 150 E rec (di rf/dt )max 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 184 211 216 119 156 299 11,286 24,605 28,238 5,194 11,661 13,292 10342 4683 3106 A ns µC mWs A/µs Thermistor Parameter Conditions Symbol V GE [V] Rated resistance Deviation of R100 R100 Value I C [A] T j[ °C] Min 25 R ΔR/R V CE [V] R100=1670 Ω 100 R Power dissipation constant Unit Typ Max 1 kΩ -2 +2 100 1670 Ω 25 0,76 mW/K -3 1/K -5 1/K² A-value A(25/50) 25 7,635*10 B-value B(25/100) 25 1,731*10 Vincotech NTC Reference Copyright Vincotech % E 4 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 500 I C (A) I C (A) 500 400 400 300 300 200 200 100 100 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE = 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 140 Z t h(j h(j--s)(K/W) I C (A) 100 120 100 80 10-1 60 0,5 0,2 40 0,1 0,05 0,02 20 0,01 0,005 0 10-2 10-4 0 0 2 4 6 8 10 12 14 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= V CE = 10 V 125 °C R th(j-s) = T j: Copyright Vincotech 150 °C 10-1 10 101 t p (s) 102 tp / T 0,45 K/W IGBT thermal model values R th (K/W) 5 4,18E-02 τ (s) 3,98E+00 8,71E-02 7,83E-01 2,37E-01 1,78E-01 4,05E-02 4,41E-02 2,78E-02 8,73E-03 1,47E-02 5,82E-04 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F ) Z th(j-s) = f(t p) 500 Z t h(j h(j--s) (K/W) IF (A) 100 400 300 10-1 200 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,60 K/W 150 °C FWD thermal model values R (K/W) 5,21E-02 τ (s) 2,54E+00 1,12E-01 4,98E-01 3,08E-01 1,31E-01 6,85E-02 2,35E-02 2,79E-02 5,39E-03 2,69E-02 9,57E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical PTC characteristic as a function of temperature R T = f(T ) PTC-typical temperature characteristic R (Ω) 2000 1800 1600 1400 1200 1000 25 50 75 100 125 T (°C) Copyright Vincotech 6 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) E (mWs) E ( mWs) 30 Eon 25 Eon 20 Eon Eon 15 Eoff 20 Eo n Eoff 15 Eoff Eoff 10 E o ff Eon Eoff 10 5 5 0 0 0 50 100 150 200 250 300 0 I C (A) 25 °C With an inductive load at 600 V V CE = V GE = ±15 V R gon = 2 Ω R goff = 2 Ω 125 °C T j: 1 2 3 4 150 °C Figure 3. FWD V GE = ±15 V IC = 150 A 5 T j: 8 E rec = f(r g ) E ( mWs) Erec 9 FWD E rec = f(I c) 20 R g ( Ω) 125 °C Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or E (mWs) 7 150 °C Typical reverse recovered energy loss as a f unct ion of collect or current 16 Erec Erec 15 6 25 °C With an inductive load at 600 V V CE = 12 Erec 8 10 Erec 4 5 Erec 0 0 0 50 100 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 2 Ω Copyright Vincotech 150 200 250 I C (A) 0 300 25 °C T j: 1 2 3 With an inductive load at 600 V V CE = 125 °C 150 °C 7 V GE = ±15 V IC= 150 A 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C 150 °C 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) 0,1 td(on) 0,1 td(on) tf tf tr tr 0,01 0,01 0,001 0,001 0 50 100 150 200 250 300 0 I C (A) (A) With an inductive load at 150 °C Tj= 1 2 3 V CE = 600 V V CE = 600 V V GE = ±15 V V GE = ±15 V IC = 150 A R gon = 2 Ω R goff = 2 Ω 4 5 6 7 8 9 r g (Ω) With an inductive load at 150 °C Tj = Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 1 t rr (μs) t rr (μs) 1 0,8 trr trr 0,8 trr 0,6 0,6 trr 0,4 trr 0,2 0,2 0 0 0 50 100 150 200 250 300 0 I C (A) At trr 0,4 600 V V GE = ±15 V R gon = 2 Ω V CE= Copyright Vincotech 2 3 4 5 6 7 8 9 R g o n (Ω) 25 °C T j: 1 600 V 125 °C V GE = ±15 V 150 °C IC= 150 A At 8 V CE = 25 °C T j: 125 °C 150 °C 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 50 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current Qr 40 40 Qr 30 Qr Qr 30 20 20 Qr Qr 10 10 0 At 0 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 I C (A) 600 V V GE = ±15 V R gon = 2 Ω V CE = At 25 °C T j: At VCE= 600 V 125 °C V GE = ±15 V 150 °C I C= 150 A Figure 11. FWD 9 R g on (Ω) 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 250 I R M (A) I R M (A) 300 250 200 IRM I RM 200 IRM 150 150 100 100 50 50 0 0 0 At IRM IRM IRM 50 100 600 V V GE = ±15 V R gon = 2 Ω V CE = Copyright Vincotech 150 200 250 I C (A) 0 300 T j: 1 2 3 4 5 6 7 8 9 R go n (Ω) 25 °C At V CE = 600 V 125 °C V GE = ±15 V 150 °C IC= 150 A 9 25 °C T j: 125 °C 150 °C 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 16000 d i /d t (A/ (A/µ µs) 16000 d i /dt (A/ (A/µs) s) di F / dt dir r/dt di F / dt di r r/ dt 12000 12000 8000 8000 4000 4000 0 0 0 50 100 150 200 250 0 300 2 4 I C (A) 600 V V GE = ±15 V R gon = 2 Ω V CE = At 25 °C T j: 600 V 125 °C V GE = ±15 V 150 °C I C= 150 A At Figure 15. V CE = 6 8 10 R g o n (Ω) IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 350 I C MAX I c CHIP 300 250 MODULE 200 Ic 150 V CE MAX 100 50 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 2 Ω R goff = 2 Ω Tj = Copyright Vincotech 10 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switching Definitions General conditions = 125 °C = 2Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 2Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 125 250 tdoff % IC % VCE 100 200 VCE 90% VGE 90% 75 150 IC VCE 50 VGE 100 tEoff tdon 25 50 IC 1% 0 -25 -0,1 0 0,1 VCE 3% IC 10% VGE 10% 0 VGE tEon 0,2 0,3 0,4 0,5 0,6 -50 2,98 0,7 t (µs) 3,01 3,04 3,07 3,1 3,13 V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 150 A I C (100%) = 150 A t doff = 0,188 µs t don = 0,077 µs t Eoff = Figure 3. 0,710 µs t Eon = Figure 4. 0,232 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,16 3,19 3,22 3,25 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 250 fitted % VCE IC % 225 IC 100 200 IC 90% 175 75 150 IC 60% 125 50 VCE IC 40% 100 75 25 tr IC 90% 50 IC10% 0 25 IC 10% tf 0 -25 0 0,05 0,1 0,15 0,2 0,25 -25 3,05 0,3 t (µs) 3,1 3,15 V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 150 A I C (100%) = 150 A tf= 0,075 µs tr = 0,010 µs Copyright Vincotech 3,2 t (µs) 11 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 150 % Eoff 100 % IC 1% Pon 125 Poff Eon 100 75 75 50 50 25 25 VGE 90% tEoff -25 -0,1 0 VCE 3% VGE 10% 0 0,1 0,2 0,3 0 0,4 0,5 0,6 -25 2,95 0,7 tEon 3 3,05 3,1 3,15 P off (100%) = 89,99 kW P on (100%) = 89,99 kW E off (100%) = 11,45 mJ E on (100%) = 6,44 mJ t Eoff = 0,71 µs t Eon = 0,23 µs Figure 7. 3,2 3,25 3,3 3,35 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 125 % Id 100 75 trr 50 25 fitted Vd 0 IRRM 10% -25 -50 -75 -100 IRRM 90% IRRM 100% -125 -150 3 3,1 3,2 3,3 3,4 t (µs) V d (100%) = 600 V I d (100%) = 150 A I RRM (100%) = -211 A t rr = 0,156 µs Copyright Vincotech 12 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Erec Qrr 100 100 50 75 tQrr tErec Prec 0 50 -50 25 -100 0 -150 2,8 3 3,2 3,4 3,6 3,8 4 4,2 -25 4,4 3 t (µs) 3,2 3,4 3,6 4 4,2 t (µs) I d (100%) = 150 A P rec (100%) = 89,99 Q rr (100%) = 24,61 µC E rec (100%) = 11,66 mJ t Qrr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 3,8 13 kW 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Ordering Code & Marking Version with std lid (black V23990-K32-T-PM) with std lid (black V23990-K32-T-PM) and P12 with thin lid (white V23990-K33-T-PM) with thin lid (white V23990-K33-T-PM) and P12 NN-NNNNNNNNNN NNNN-TTTTTTTVV Vinco LLLLL WWYY SSSS UL Ordering Code V23990-K430-F60-/0A/-PM V23990-K430-F60-/1A/-PM V23990-K430-F60-/0B/-PM V23990-K430-F60-/1B/-PM Text Datamatrix in DataMatrix as K430F60 K430F60 K430F60 K430F60 in packaging barcode as K430F60-/0A/ K430F60-/1A/ K430F60-/0B/ K430F60-/1B/ Name Type&Ver Date code Vinco&Lot Serial&UL NN-NNNNNNNNNNNNNN TTTTTTTVV WWYY Vinco LLLLL SSSS UL Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Copyright Vincotech 14 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Pinout Identification ID Component Voltage Current Function T1-T6 IGBT 1200V 150A Inverter Switch D1-D6 FWD 1200V 150A Inverter Diode T PTC - - Thermistor Copyright Vincotech 15 Comment 10 Jul. 2015 / Revision 1 V23990-K430-F60-PM datasheet Packaging instruction Standard packaging quantity (SPQ) 48 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for MiniSkiiP® 3 packages see vincotech.com website. General datasheet General datasheet for MiniSkiiP® 3 packages see vincotech.com website. Document No.: Date: V23990-K430-F60-D1-14 10 Jul. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 10 Jul. 2015 / Revision 1