10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet flow NPC 1 650 V / 150 A Features flow 1 12mm housing ● NPC inverter topology ● Optimized for full rated bi-directional usage (4 quadrant operation) ● High-speed IGBT in all switch positions ● NTC ● Low inductive design with integrated DC capacitor ● flow 1 12mm package Solder Pin Press-fit Schematic Target applications ● Solar inverter ● UPS Types ● 10-FY07NPA150SM02-L365F08 ● 10-PY07NPA150SM02-L365F08Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 83 A 450 A 128 W Buck Switch\ Out. Boost Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S =80 °C 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Parameter Conditions Symbol Value Unit 650 V 87 A 300 A 113 W 175 °C Value Unit 650 V 106 A 300 A 149 W 175 °C Value Unit V MAX 500 V T op -55…+125 °C Value Unit Buck Diode\ Out. Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T S = 80°C T j = T jmax T S = 80°C Conditions Symbol Out. Boost Inverse Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T s = 80°C T j = T jmax T j = T jmax T s = 80°C Conditions Symbol DC Link Capacitor Maximum DC voltage Operation Temperature Parameter Symbol Conditions Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C Isolation Properties Isolation voltage AC voltage RMS tp = 60s 2500 V DC voltage t p = 2s 6000 V min 12,7 mm 8,07 \ 7,86 mm Vi sol Creepage distance Clearance Comparative Tracking Index Copyright Vincotech solder pin \ Press-fit >200 CTI 2 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Characteristic Values Buck Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 25 1,70 2,22 125 1,88 150 1,93 Static Gate-emitter threshold voltage V GE(th) Collector-emitter saturation voltage V CEsat V GE=V CE 0,0015 15 150 Collector-emitter c ut-off c urrent I CES 0 650 Gate-emitter leakage current I GES 20 0 Internal gate resistanc e 25 125 25 80 240 125 rg none Input c apacitanc e C ies 8600 Output c apacitanc e C oes Reverse transfer capacitanc e C res Gate charge f=1 MHz 0 V 125 25 25 25 150 V µA nA Ω pF 32 15 Qg 520 150 25 332 nC 0,74 K/W Thermal Thermal resistance junction to sink R th(j-s) phase-change material ʎ =3,4W /mK IGBT Switching Turn-on delay time t d(on) R goff = 2 Ω Rise time Turn-off delay time tr R gon = 2 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 3,8 µC Q rFWD = 7,1 µC Q rFWD = 8,1 µC 3 350 89 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 48 46 46 11 12 13 133 152 156 7 7 8 0,737 1,118 1,210 0,367 0,706 0,798 ns mWs 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,67 1,77 125 1,67 150 1,66 Static Forward voltage Reverse leakage current 150 VF 25 650 Ir V 7,6 150 µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,84 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech di /dt = 7000 A/µs di /dt = 7124 A/µs ±15 di /dt = 6971 A/µs E rec (di rf/dt )max 4 350 89 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 110 143 151 52 85 96 3,795 7,081 8,085 0,853 1,613 1,849 2642 2119 2131 A ns µC mWs A/µs 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switch Parameter Symbol Conditions Value V GE [V] V CE [V] I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 25 1,70 2,22 125 1,88 150 1,93 Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat Collec tor-emitter c ut-off current Gate-emitter leakage c urrent Internal gate resistance V GE=V CE 0,0015 15 0 I CES 20 I GES 150 25 125 25 650 80 0 240 125 rg none Input capacitance C ies 8600 Output capacitance C oes Reverse transfer capac itance C res Gate c harge f=1 MHz 0 V 125 25 25 25 150 V µA nA Ω pF 32 15 Qg 520 150 25 332 nC 0,74 K/W Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ =3,4W /mK IGBT Switching Turn-on delay time t d(on) R goff = 2 Ω Rise time Turn-off delay time tr R gon = 2 Ω t d(off) ±15 Fall time Turn-on energy (per pulse) Turn-off energy (per pulse) Copyright Vincotech tf E on Q rFWD = 3,6 µC Q rFWD = 6,9 µC Q rFWD = 7,9 µC E off 5 350 89 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 50 51 50 11 13 14 114 134 139 5 7 9 1,100 1,773 1,921 0,243 0,621 0,719 ns mWs 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,67 1,77 125 1,67 150 1,66 Static Forward voltage Reverse leakage current 150 VF 25 650 Ir V 7,6 150 µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,84 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 5600 A/µs di /dt = 6000 A/µs ±15 di /dt = 5796 A/µs 350 89 E rec (di rf/dt )max 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 90 117 121 61 97 109 3,603 6,937 7,941 0,692 1,331 1,529 1618 1020 864 A ns µC mWs A/µs Out. Boost Inverse Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 1,85 2 Static 25 Forward voltage 150 VF 125 150 Reverse leakage c urrent 650 Ir V 1,66 25 1,8 150 µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) phase-c hange material ʎ =3,4W/mK 0,64 6 K/W 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet DC Link Capacitor Parameter Symbol Conditions Value T j[°C] Capacitance Min Typ Unit Max 300 C Tolerance -10 nF +10 % Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 7 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switch\ Out. Boost Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 400 I C (A) I C (A) 400 300 300 200 200 100 100 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V T j: 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 8 V to 17 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 150 Z t h(j h(j--s)(K/W) I C (A) 100 120 90 10-1 60 0,5 0,2 0,1 0,05 30 0,02 0,01 0,005 0 10-2 10-5 0 0 1 2 3 4 5 6 7 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 150 °C 10 101 t p (s) 102 tp / T 0,74 K/W IGBT thermal model values R th (K/W) Copyright Vincotech 10-1 8 1,09E-01 τ (s) 1,94E+00 2,21E-01 2,60E-01 2,87E-01 6,98E-02 8,43E-02 8,29E-03 3,94E-02 3,67E-04 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switch\ Out. Boost Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G) IGBT I C = f(V CE) I C (A) 1000 V G E (V) 15 130V 520V 12,5 100 10 7,5 10 5 1 2,5 0 0,1 0 50 100 150 200 250 300 350 400 1 10 Q G (nC) 1000 V C E (V) At I C= 100 At 150 Copyright Vincotech A 9 D = single pulse Th = 80 ºC V GE = Tj = ±15 T jmax V ºC 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Diode\ Out. Boost Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 450 Z t h( jj--s) (K/W) IF (A) 100 400 350 300 250 10-1 200 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 150 100 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,84 K/W 150 °C FWD thermal model values Copyright Vincotech 10 R (K/W) 6,09E-02 τ (s) 4,33E+00 1,45E-01 8,74E-01 3,25E-01 1,39E-01 2,06E-01 4,67E-02 8,27E-02 9,15E-03 2,35E-02 1,16E-03 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Inverse Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 500 Z t h( jj--s) (K/W) IF (A) 100 400 300 10-1 200 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,64 K/W 150 °C FWD thermal model values R (K/W) 6,14E-02 τ (s) 3,48E+00 1,03E-01 5,85E-01 2,81E-01 9,46E-02 1,21E-01 2,14E-02 4,83E-02 5,07E-03 2,26E-02 5,92E-04 Thermistor Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 11 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) 2 2,5 E (mWs) E ( mWs) Typical swit ching energy losses as a f unct ion of collect or current Eon Eon 1,5 2 Eon Eon Eoff Eoff 1,5 Eo n 1 Eo n 1 E off Eoff Eoff 0,5 0,5 Eo ff 0 0 10 30 50 70 90 110 130 150 170 0 I C (A) 25 °C With an inductive load at 350 V V CE = V GE = ±15 V R gon = 2 Ω R goff = 2 Ω 125 °C T j: 2 4 6 150 °C V GE = IC = Figure 3. FWD ±15 V 89 A T j: FWD E rec = f(I c) E rec = f(r g ) E ( mWs) E (mWs) 10 125 °C Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec R g ( Ω) 150 °C Typical reverse recovered energy loss as a f unct ion of collect or current 3 8 25 °C With an inductive load at 350 V V CE = 2 2,5 Erec Erec 1,5 Erec 2 1 1,5 Erec Erec 1 0,5 0,5 0 0 10 30 50 70 With an inductive load at 350 V V CE = V GE = ±15 V R gon = 2 Ω Copyright Vincotech 90 110 130 150 I C (A) 0 170 25 °C T j: 1 2 3 With an inductive load at 350 V V CE = 125 °C 150 °C V GE = IC= 12 ±15 V 89 A 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C 150 °C 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μ s) 1 td(off ) td(off ) 0,1 0,1 td(on) td(on) tr 0,01 tr 0,01 tf tf 0,001 0,001 10 30 50 70 90 110 130 150 170 0 I C (A) (A) With an inductive load at 150 °C Tj= 1 2 3 V CE = 350 V V CE = 350 V V GE = ±15 V V GE = ±15 V IC = 89 A R gon = 2 Ω R goff = 2 Ω 4 5 6 7 8 9 r g (Ω) With an inductive load at 150 °C Tj = Figure 7. FWD Typical reverse recovery t ime as a f unct ion of collect or current Figure 8. FWD Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,12 0,12 t rr (μs) t rr (μs) trr trr trr trr 0,09 0,09 trr 0,06 0,06 0,03 0,03 0 0 10 30 50 70 90 110 130 150 170 0 I C (A) At trr 350 V V GE = ±15 V R gon = 2 Ω V CE= Copyright Vincotech 2 3 4 5 6 7 8 9 R g o n (Ω) 25 °C T j: 1 At V CE = 125 °C V GE = 150 °C IC= 13 350 V ±15 V 89 A 25 °C T j: 125 °C 150 °C 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 12 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current Qr Qr 10 8 Qr 9 Qr 6 6 Qr 4 Qr 3 2 0 At 0 10 30 50 70 90 110 130 150 170 0 1 2 3 4 5 6 7 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω At V CE = 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V ±15 V 89 A 9 R g on (Ω) 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 200 I R M (A) I R M (A) 160 IRM I RM IRM 120 150 IRM IRM 100 80 50 40 0 0 10 At IRM 30 50 70 350 V V GE = ±15 V R gon = 2 Ω V CE = Copyright Vincotech 90 110 130 150 I C (A) 0 170 2 3 4 5 6 7 8 9 R go n (Ω) 25 °C T j: 1 At V CE = 125 °C V GE = 150 °C IC= 14 350 V ±15 V 89 A 25 °C T j: 125 °C 150 °C 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 12000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 10000 di F / dt dir r/dt 8000 di F / dt di r r/ dt 9000 6000 6000 4000 3000 2000 0 0 10 30 50 70 90 110 130 150 0 170 2 4 6 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω At V CE = 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V ±15 V 89 A 10 R g o n (Ω) 25 °C T j: 125 °C 150 °C IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 350 I C MAX I c CHIP 300 250 MODULE 200 Ic 150 V CE MAX 100 50 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 2 Ω R goff = 2 Ω Tj = Copyright Vincotech 15 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switching Definition General conditions = 125 °C = 2Ω Without internal capacitor Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 2Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 300 200 IC % % 150 200 tdoff 100 VGE 90% VCE 90% VCE 100 VGE IC 50 VGE tdon tEoff VCE VGE 10% 0 0 tEon IC 1% -50 -0,01 0,04 0,09 0,14 VCE 3% IC 10% 0,19 -100 2,98 0,24 t (µs) 3,02 3,06 V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 20 V V GE (100%) = 20 V V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 89 A I C (100%) = 89 A t doff = t Eoff = 0,152 0,177 µs µs t don = t Eon = 0,046 0,124 µs µs Figure 3. IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,1 3,14 t (µs) Figure 4. IGBT Turn-on Swit ching Wavef orms & def init ion of t r 300 150 % % 125 IC 250 fitted IC 100 200 IC 90% 75 150 IC 60% VCE 50 100 IC 40% IC 90% tr 25 50 IC10% VCE 0 -25 0,12 tf 0,14 0,16 0,18 0 0,2 -50 3,04 0,22 t (µs) IC 10% 3,055 3,07 3,085 3,115 t (µs) V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 89 A I C (100%) = 89 A tf= 0,007 µs tr = 0,012 µs Copyright Vincotech 3,1 16 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switching Definition Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 125 % IC 1% % Eoff Eon 100 100 Poff Pon 75 75 50 50 25 25 VGE 90% VCE 3% VGE 10% 0 0 tEon tEoff -25 -0,01 0,04 0,09 0,14 0,19 -25 2,99 0,24 3,02 3,05 3,08 P off (100%) = 31,16 kW P on (100%) = 31,16 kW E off (100%) = 0,71 mJ E on (100%) = 1,12 mJ t Eoff = 0,18 µs t Eon = 0,12 µs Figure 7. 3,11 3,14 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 % 100 Id trr 50 Vd fitted 0 IRRM 10% -50 -100 IRRM 90% IRRM 100% -150 -200 3,03 3,06 3,09 3,12 3,15 3,18 t (µs) V d (100%) = 350 V I d (100%) = 89 A I RRM (100%) = -143 A t rr = 0,085 µs Copyright Vincotech 17 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Buck Switching Definition Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. 125 150 % FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Id % Qrr Erec 100 100 tQrr 50 tErec 75 Prec 0 50 -50 25 -100 0 -150 -200 3,03 3,09 3,15 3,21 -25 3,03 3,27 t (µs) 3,09 3,15 3,27 t (µs) I d (100%) = 89 A P rec (100%) = 31,16 kW Q rr (100%) = 7,08 µC E rec (100%) = 1,61 mJ t Qrr = 0,17 µs t Erec = 0,17 µs Copyright Vincotech 3,21 18 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) 2,5 2,5 E (mWs) E ( mWs) Typical swit ching energy losses as a f unct ion of collect or current 2 2 Eon Eon 1,5 1,5 Eon E on Eoff 1 1 Eoff 0,5 0,5 E off Eoff 0 0 10 30 50 70 90 110 130 150 170 0 I C (A) 25 °C With an inductive load at 350 V V CE = 125 °C T j: 1 2 3 4 V GE = ±15 V V GE = R gon = 2 Ω IC = R goff = 2 Ω Figure 3. FWD ±15 V 90 A 5 T j: E rec = f(I c) E rec = f(r g ) E (mWs) E ( mWs) 8 R g ( Ω) 9 125 °C FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec 7 Figure 4. Typical reverse recovered energy loss as a f unct ion of collect or current 2,5 6 25 °C With an inductive load at 350 V V CE = 2 2 1,6 1,5 1,2 Erec Erec 0,8 1 Erec 0,4 0,5 0 0 10 30 50 70 With an inductive load at 350 V V CE = 90 110 130 150 I C (A) 0 170 25 °C T j: 1 3 With an inductive load at 350 V V CE = 125 °C V GE = ±15 V V GE = R gon = 2 Ω IC= Copyright Vincotech 2 19 ±15 V 90 A 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) 0,1 0,1 td(on) td(on) tr tr 0,01 0,01 tf tf 0,001 0,001 10 30 50 70 90 110 130 150 170 0 I C (A) (A) With an inductive load at 125 °C Tj= 1 2 3 4 5 6 7 8 V CE = 350 V V CE = 350 V V GE = ±15 V V GE = ±15 V R gon = 2 Ω IC = 90 A R goff = 2 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,16 t rr (μs) t rr (μs) 0,16 0,12 0,12 trr 0,08 trr 0,08 trr 0,04 trr 0,04 0 0 10 30 50 70 90 110 130 150 170 0 I C (A) At 9 r g (Ω) With an inductive load at 125 °C Tj = 350 V V GE = ±15 V R gon = 2 Ω V CE= Copyright Vincotech 2 3 4 5 6 7 8 9 R g o n (Ω) 25 °C T j: 1 At 125 °C V CE = V GE = IC= 20 350 V ±15 V 90 A 25 °C T j: 125 °C 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 12 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current 8 Qr Qr 9 6 6 4 Qr Qr 3 2 0 At 0 10 30 50 70 90 110 130 150 170 0 1 2 3 4 5 6 7 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω V CE = At 25 °C T j: VCE= At 125 °C V GE = I C= Figure 11. FWD 350 V ±15 V 90 A 9 R g on (Ω) 25 °C T j: 125 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 160 I R M (A) I R M (A) 160 I RM 120 120 IRM IRM 80 80 I RM 40 40 0 0 10 At 30 50 70 350 V V GE = ±15 V R gon = 2 Ω V CE = Copyright Vincotech 90 110 130 150 I C (A) 0 170 2 3 4 5 6 7 8 9 R go n (Ω) 25 °C T j: 1 At 125 °C V CE = V GE = IC= 21 350 V ±15 V 90 A 25 °C T j: 125 °C 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 10000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 10000 di F / dt dir r/dt 8000 di F / dt di r r/ dt 8000 6000 6000 4000 4000 2000 2000 0 0 10 30 50 70 90 110 130 150 0 170 2 4 6 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω V CE = At 25 °C T j: At 125 °C V CE = V GE = I C= Figure 15. 350 V ±15 V 90 A 10 R g o n (Ω) 25 °C T j: 125 °C IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 350 I C MAX I c CHIP 300 250 MODULE 200 Ic 150 V CE MAX 100 50 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 2 Ω R goff = 2 Ω Tj = Copyright Vincotech 22 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switching Definition Without internal capacitor General conditions = 125 °C = 2Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 2Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 200 300 % % IC 150 200 tdoff 100 VGE 90% VCE 90% 50 VCE 100 IC VGE IC 1% VCE 0 VGE tdon tEoff VGE 10% 0 VCE 3% IC 10% tEon -50 -0,02 0,03 0,08 0,13 0,18 -100 2,98 0,23 t (µs) 3,02 3,06 3,1 V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 20 V V GE (100%) = 20 V V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 90 A I C (100%) = 90 A t doff = t Eoff = 0,149 0,166 µs µs t don = t Eon = 0,045 0,134 µs µs Figure 3. IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,14 Figure 4. 3,18 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 200 250 % % 200 150 fitted IC 150 100 IC 90% 100 VCE IC 60% IC 40% 50 50 VCE tf 0 IC10% IC IC 10% 0 -50 0,11 0,13 0,15 0,17 -50 3,02 0,19 t (µs) V C (100%) = 350 V I C (100%) = 90 A tf= 0,006 µs Copyright Vincotech IC 90% tr 3,032 3,044 3,056 3,068 3,08 t (µs) 23 V C (100%) = 350 V I C (100%) = 90 A tr = 0,014 µs 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switching Definition Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 125 % Poff % IC 1% 100 Eon 100 Pon 75 75 50 50 25 25 VGE 90% VCE 3% VGE 10% Eoff 0 0 tEon tEoff -25 -0,01 0,04 0,09 0,14 -25 2,97 0,19 3,01 3,05 P off (100%) = 31,58 kW P on (100%) = 31,58 kW E off (100%) = 0,69 mJ E on (100%) = 1,17 mJ t Eoff = 0,17 µs t Eon = 0,13 µs Figure 7. 3,09 3,13 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 % Id 100 trr 50 0 fitted Vd IRRM 10% -50 -100 -150 3,03 IRRM 90% IRRM 100% 3,07 3,11 3,15 3,19 t (µs) V d (100%) = 350 V I d (100%) = 90 A I RRM (100%) = -122 A t rr = 0,089 µs Copyright Vincotech 24 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Out. Boost Switching Definition Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. 125 150 % FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) % Id Qrr Erec 100 100 Prec tQrr 50 75 0 50 -50 25 -100 0 tErec -150 3,02 3,07 3,12 3,17 3,22 -25 3,02 3,27 t (µs) 3,07 3,12 3,17 3,27 t (µs) I d (100%) = 90 A P rec (100%) = 31,58 kW Q rr (100%) = 6,75 µC E rec (100%) = 1,65 mJ t Qrr = 0,18 µs t Erec = 0,18 µs Copyright Vincotech 3,22 25 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Ordering Code & Marking Version without thermal paste 12mm housing with solder pins without thermal paste 12mm housing with Press-fit pins Ordering Code 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y Text NN-NNNNNNNNNNNNNN TTTTTTTVV WWYY UL Vinco LLLLL SSSS Name Date code UL & Vinco Lot Serial N N -N N N N N N N N N N N N N N -T T T T T T T V V WWYY UL Vinco LLLLL SSSS Datamatrix Type Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 52,2 6,9 NTC1 2 52,2 0 NTC2 3 36,2 6,75 E37 4 33,2 7,9 G3 5 33,2 4,9 G7 6 9,2 5,75 E48 7 6,2 6,9 G4 8 6,2 3,9 G8 9 2,7 0 DC- 10 0 0 DC- 11 12 13 2,7 0 2,7 2,7 2,7 5,4 DCDC- 14 0 5,4 DC- 15 2,7 12,75 GND 16 0 12,75 GND 17 2,7 15,45 GND 18 0 15,45 19 2,7 22,8 GND DC+ 20 0 22,8 21 2,7 25,5 DC+ DC+ Pin X Y 22 0 25,5 DC+ 30 46 24 G2 23 2,7 28,2 DC+ 31 52,2 20,1 OUT OUT DC- Pin table[mm] Function 24 0 28,2 DC+ 32 49,5 22,8 25 18,3 22,45 E15 33 52,2 22,8 OUT 26 21,3 21,3 G5 34 49,5 25,5 OUT 27 21,3 24,3 G1 35 52,2 25,5 OUT 28 43 22,15 29 46 21 E26 G6 36 37 49,5 52,2 28,2 28,2 OUT OUT Copyright Vincotech 26 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Pinout Identification ID Component Voltage Current Function T11,T12,T15,T16 IGBT D11, D12 FWD 650V 75A Buck Switch 650V 150A T13,T14,T17,T18 Buck Diode IGBT 650V 75A Out. Boost Switch D13,D14,D17,D18 FWD 650V 75A Out. Boost Diode D43,D44,D47,D48 FWD 650V 75A Out. Boost Inverse Diode C1,C2 Capacitor 500V - DC Link Capacitor Rt NTC - - Thermistor Copyright Vincotech 27 Comment 16 Nov. 2015 / Revision 4 10-FY07NPA150SM02-L365F08 10-PY07NPA150SM02-L365F08Y datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: Modification: Pages 10-FY07NPA150SM02-L365F08-D4-14 16 Nov. 2015 Added Press-fit option 1, 30 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 28 16 Nov. 2015 / Revision 4