10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet flow NPC 1 650 V / 150 A Features flow 1 12mm housing ● NPC inverter topology ● Optimized for full rated bi-directional usage (4 quadrant operation) ● High-speed IGBT in all switch positions ● NTC ● Low inductive design with integrated DC capacitor ● flow 1 12mm package Solder Pin Press-fit Schematic Target applications ● Solar inverter ● UPS Types ● 10-FY07NPA150SM01-L364F08 ● 10-PY07NPA150SM01-L364F08Y Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 83 A 450 A 128 W Buck Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S =80 °C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Parameter Conditions Symbol Value Unit 650 V Buck Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF T j = T jmax T h = 80°C 68 A Total power dissipation P tot T j = T jmax T h = 80°C 112 W Maximum Junction Temperature T jmax 175 °C Value Unit 650 V 150 A 450 A 164 W Parameter Condition Symbol Out. Boost Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Value Unit 650 V 82 A 200 A 106 W 175 °C Parameter T S =80 °C Conditions Symbol Out. Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Copyright Vincotech T j = T jmax T j = T jmax 2 T s = 80°C T s = 80°C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Parameter Conditions Symbol Value Unit 650 V 121 A 200 A 203 W 175 °C Value Unit V MAX 630 V T op -55…+125 °C Value Unit Out. Boost Inverse Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T h = 80°C T j = T jmax T h = 80°C Conditions Symbol DC Link Capacitor Maximum DC voltage Operation Temperature Parameter Symbol Conditions Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C Isolation Properties Isolation voltage AC voltage RMS tp = 60s 2500 V DC voltage t p = 2s 6000 V min 12,7 mm 8,07 \ 7,86 mm Vi sol Creepage distance Clearance Comparative Tracking Index Copyright Vincotech solder pin \ Press-fit >200 CTI 3 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Characteristic Values Buck Switch Parameter Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 25 1,70 2,22 125 1,88 150 1,93 Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE=V CE 0,0015 15 150 Collec tor-emitter cut-off c urrent I CES 0 650 Gate-emitter leakage current I GES 20 0 Internal gate resistance 25 125 25 80 240 125 rg none Input capacitance C ies 8600 Output capacitance C oes Reverse transfer c apac itanc e C res Gate c harge f=1 MHz 0 V 125 25 25 25 150 V µA nA Ω pF 32 0 Qg 0 0 25 332 nC 0,74 K/W Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W /mK IGBT Switching Turn-on delay time t d(on) R goff = 2 Ω Rise time Turn-off delay time tr R gon = 2 Ω t d(off) ±15 Fall time Turn-on energy (per pulse) Turn-off energy (per pulse) Copyright Vincotech tf E on Q rFWD = 1,5 µC Q rFWD = 3,7 µC Q rFWD = 4,8 µC E off 4 350 90 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 46 46 45 11 13 14 130 147 152 7 7 7 0,563 0,931 1,051 0,361 0,641 0,732 ns mWs 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,50 2,6 125 2,19 Static Forward voltage VF Reverse leakage current Ir 100 25 650 20 V µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,85 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech di /dt = 7366 A/µs di /dt = 6200 A/µs ±15 di /dt = 6600 A/µs E rec (di rf/dt )max 5 350 90 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 88 121 131 22 70 81 1,457 3,718 4,777 0,274 0,796 1,054 14960 6659 6303 A ns µC mWs A/µs 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switch Parameter Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 4,2 5 5,8 1,10 1,45 Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE=V CE 0,002 25 125 25 15 150 125 150 Collec tor-emitter cut-off c urrent Gate-emitter leakage current Internal gate resistance Input capacitance 0 I CES 20 I GES Gate c harge 80 125 25 0 200 125 none rg µA nA Ω 23250 C ies f=1 MHz Reverse transfer c apac itanc e V 1,09 25 650 V 0 25 25 pF 60 C res 15 Qg 520 75 25 872 nC 0,58 K/W Thermal Thermal resistanc e junction to sink R th(j-s) phase-change material ʎ =3,4W /mK IGBT Switching Turn-on delay time t d(on) R goff = 2 Ω Rise time Turn-off delay time tr R gon = 2 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 3,2 µC Q rFWD = 5,9 µC Q rFWD = 6,7 µC 6 350 88 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 95 94 94 7 9 9 356 397 412 74 73 65 0,450 0,682 0,849 4,431 6,677 7,032 ns mWs 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,50 1,77 125 1,43 150 1,40 Static Forward voltage Reverse leakage current 100 VF 25 650 Ir V 5,3 150 µA Thermal Thermal resistanc e junction to sink R th(j-s) phase-c hange material ʎ =3,4W/mK 0,90 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech di /dt = 8581 A/µs di /dt = 8320 A/µs ±15 di /dt = 7500 A/µs E rec (di rf/dt )max 7 350 88 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 103 130 137 51 86 94 3,178 5,859 6,736 0,763 1,449 1,630 2631 2254 2303 A ns µC mWs A/µs 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Inverse Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,77 1,82 150 1,57 Static Forward voltage VF Reverse leakage current Ir 100 25 650 1,2 V µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,47 K/W Value Unit DC Link Capacitor Parameter Symbol Conditions T j[°C] Capacitance Min Typ Max 200 C Tolerance -10 nF +10 % Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 8 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 400 I C (A) I C (A) 400 300 300 200 200 100 100 0 0 0 1 2 tp = 250 µs V GE = 15 V 3 T j: 4 V C E (V) 0 5 1 2 4 5 V C E (V) 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 8 V to 17 V in steps of 1 V Typical transfer characteristics 3 IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 150 Z t h(j h(j--s)(K/W) I C (A) 100 120 90 10-1 60 0,5 0,2 0,1 0,05 30 0,02 0,01 0,005 0 10-2 10-5 0 0 1 2 3 4 5 6 7 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 150 °C 10 101 t p (s) 102 tp / T 0,74 K/W IGBT thermal model values R th (K/W) Copyright Vincotech 10-1 9 1,09E-01 τ (s) 1,94E+00 2,21E-01 2,60E-01 2,87E-01 6,98E-02 8,43E-02 8,29E-03 3,94E-02 3,67E-04 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q G) Safe operating area IGBT I C = f(V CE) I C (A) 1000 V G E (V) 15 130V 520V 12,5 100 10 10 7,5 5 1 2,5 0 0,1 0 20 40 60 80 100 120 140 160 180 1 10 Q G (nC) 1000 V C E (V) At I C= 100 At 150 Copyright Vincotech A 10 D = single pulse Th = 80 ºC V GE = Tj = ±15 T jmax V ºC 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 300 Z t h( jj--s) (K/W) IF (A) 100 250 200 10-1 150 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,85 K/W 150 °C FWD thermal model values Copyright Vincotech 11 R (K/W) 9,18E-02 τ (s) 3,34E+00 1,92E-01 6,05E-01 3,65E-01 1,19E-01 1,13E-01 2,58E-02 5,25E-02 4,68E-03 3,80E-02 8,67E-04 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switch Characteristics Typical output characteristics IGBT I C = f(V CE) Typical output characteristics IGBT I C = f(V CE) 500 I C (A) I C (A) 500 400 400 300 300 200 200 100 100 0 0 0 0,5 1 tp = 250 µs V GE = 15 V 1,5 2 T j: 2,5 V C E (V) 0 3 0,5 1 2 2,5 V C E (V) 25 °C tp = 250 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics 1,5 IGBT I C = f(V GE) µs °C Transient Thermal Impedance as function of Pulse duration IGBT Z th(j-s) = f(t p) 120 Z t h(j h(j--s)(K/W) I C (A) 100 90 10-1 60 0,5 10-2 0,2 0,1 30 0,05 0,02 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 150 °C 100 101 t p (s) 102 tp / T 0,58 K/W IGBT thermal model values R th (K/W) Copyright Vincotech 10-1 12 1,24E-01 τ (s) 1,33E+00 2,59E-01 1,40E-01 1,21E-01 4,38E-02 5,87E-02 9,56E-03 1,74E-02 1,21E-03 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area 17,5 1000 130V 15 IGBT I C (A) I C = f(V CE) V G E (V) V GE = f(Q G) 520V 100 12,5 10 10 7,5 5 1 2,5 0 0,1 0 200 400 600 800 1000 1 1200 10 Q G (nC) 1000 V C E (V) At I C= 100 At 150 Copyright Vincotech A 13 D = single pulse Th = 80 ºC V GE = Tj = ±15 T jmax V ºC 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 300 Z t h( jj--s) (K/W) IF (A) 100 250 200 10-1 150 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,90 K/W 150 °C FWD thermal model values Copyright Vincotech 14 R (K/W) 7,42E-02 τ (s) 3,64E+00 1,41E-01 5,85E-01 3,41E-01 1,04E-01 1,94E-01 2,64E-02 9,09E-02 6,04E-03 5,85E-02 5,72E-04 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Inverse Diode Characteristics FWD Typical forward characteristics I F = f(V F ) FWD Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 300 Z t h(j h(j--s) (K/W) IF (A) 100 250 200 10-1 150 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 50 10-2 0 0 1 2 3 10-4 4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,47 K/W 150 °C FWD thermal model values R (K/W) 4,73E-02 τ (s) 4,12E+00 6,76E-02 9,18E-01 1,01E-01 1,37E-01 1,41E-01 3,83E-02 6,28E-02 8,98E-03 4,92E-02 1,99E-03 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 15 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) 2 E (mWs) E ( mWs) Typical swit ching energy losses as a f unct ion of collect or current 1,6 2 Eon Eon 1,5 Eon Eon Eoff 1,2 Eoff 1 Eon Eo n 0,8 Eoff Eoff E o ff 0,5 0,4 Eo ff 0 0 10 30 50 70 90 110 130 150 170 0 I C (A) 25 °C With an inductive load at 350 V V CE = V GE = ±15 V R gon = 2 Ω R goff = 2 Ω 125 °C T j: 1 2 3 4 150 °C V GE = IC = Figure 3. FWD ±15 V 90 A 5 T j: E rec = f(r g ) E ( mWs) E (mWs) 9 125 °C 1,2 Erec 0,9 Erec R g ( Ω) FWD E rec = f(I c) 1,2 8 Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec 7 150 °C Typical reverse recovered energy loss as a f unct ion of collect or current 1,6 6 25 °C With an inductive load at 350 V V CE = Erec 0,6 0,8 Erec 0,3 0,4 Erec 0 0 10 30 50 70 With an inductive load at 350 V V CE = V GE = ±15 V R gon = 2 Ω Copyright Vincotech 90 110 130 150 I C (A) 0 170 25 °C T j: 1 2 3 With an inductive load at 350 V V CE = 125 °C 150 °C V GE = IC= 16 ±15 V 90 A 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C 150 °C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) 0,1 0,1 td(on) td(on) tr tr 0,01 0,01 tf tf 0,001 0,001 10 30 50 70 90 110 130 150 170 0 I C (A) (A) With an inductive load at 150 °C Tj= 1 2 3 V CE = 350 V V CE = 350 V V GE = ±15 V V GE = ±15 V IC = 90 A R gon = 2 Ω R goff = 2 Ω 4 5 6 Figure 7. FWD 8 9 r g (Ω) Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,12 t rr (μs) t rr (μs) 0,12 trr trr 0,09 0,09 0,06 0,06 0,03 trr trr 0,03 trr trr 0 0 10 30 50 70 90 110 130 150 170 0 I C (A) At 7 With an inductive load at 150 °C Tj = 350 V V GE = ±15 V R gon = 2 Ω V CE= Copyright Vincotech 2 3 4 5 6 7 8 9 R g o n (Ω) 25 °C T j: 1 At V CE = 125 °C V GE = 150 °C IC= 17 350 V ±15 V 90 A 25 °C T j: 125 °C 150 °C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 8 5 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current Qr Qr 4 6 Qr Qr 3 4 2 Qr 2 Qr 1 0 At 0 10 30 50 70 90 110 130 150 170 0 1 2 3 4 5 6 7 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω At V CE = 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V ±15 V 90 A 9 R g on (Ω) 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 160 I R M (A) I R M (A) 160 IRM IR M 120 120 IRM IRM IRM 80 80 I RM 40 40 0 0 10 At 30 50 70 350 V V GE = ±15 V R gon = 2 Ω V CE = Copyright Vincotech 90 110 130 150 I C (A) 0 170 2 3 4 5 6 7 8 9 R go n (Ω) 25 °C T j: 1 At V CE = 125 °C V GE = 150 °C IC= 18 350 V ±15 V 90 A 25 °C T j: 125 °C 150 °C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 20000 di F / dt dir r/dt 16000 di F / dt di r r/ dt 15000 12000 10000 8000 5000 4000 0 0 10 30 50 70 90 110 130 150 0 170 2 4 6 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω At V CE = 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V ±15 V 90 A 10 R g o n (Ω) 25 °C T j: 125 °C 150 °C IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 350 I C MAX I c CHIP 300 250 MODULE 200 Ic 150 V CE MAX 100 50 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 2 Ω R goff = 2 Ω Tj = Copyright Vincotech 19 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switching Definition General conditions = 125 °C = 2Ω Without internal capacitor Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 2Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 200 300 % % IC 150 200 tdoff 100 VCE 90% VGE 90% 100 VGE VCE IC 50 tdon tEoff VCE 0 IC 1% 0 VGE 10% VCE 3% IC 10% VGE tEon -50 -0,05 0 0,05 0,1 0,15 -100 2,96 0,2 t (µs) 3 3,04 3,08 V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 20 V V GE (100%) = 20 V V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 89 A I C (100%) = 89 A t doff = t Eoff = 0,147 0,165 µs µs t don = t Eon = 0,046 0,126 µs µs Figure 3. IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,12 Figure 4. 3,16 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 150 250 VCE % % 125 200 fitted IC 100 IC 90% 150 75 VCE IC 60% 100 50 50 25 IC10% 0 -25 0,12 IC tf 0,14 0,16 IC 10% 0 0,18 -50 3,01 0,2 t (µs) 3,023 3,036 3,049 3,062 3,075 t (µs) V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 89 A I C (100%) = 89 A tf= 0,007 µs tr = 0,013 µs Copyright Vincotech IC 90% tr IC 40% 20 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switching Definition Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 125 % % IC 1% 100 Eon 100 Eoff Poff 75 75 50 50 25 Pon 25 VGE 90% VCE 3% VGE 10% 0 0 tEoff -25 -0,01 0,04 0,09 tEon 0,14 -25 2,97 0,19 3 3,03 3,06 P off (100%) = 31,13 kW P on (100%) = 31,13 kW E off (100%) = 0,64 mJ E on (100%) = 0,93 mJ t Eoff = 0,16 µs t Eon = 0,13 µs Figure 7. 3,09 3,12 3,15 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 Id % 100 trr 50 0 fitted Vd IRRM 10% -50 -100 -150 3,02 IRRM 90% IRRM 100% 3,06 3,1 3,14 3,18 t (µs) V d (100%) = 350 V I d (100%) = 89 A I RRM (100%) = -121 A t rr = 0,070 µs Copyright Vincotech 21 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Buck Switching Definition Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Qrr 100 Erec 100 50 75 tQrr Prec 0 50 -50 25 -100 0 -150 3,01 3,08 3,15 3,22 3,29 -25 3,01 3,36 t (µs) tErec 3,08 3,15 3,22 3,36 t (µs) I d (100%) = 89 A P rec (100%) = 31,13 kW Q rr (100%) = 3,72 µC E rec (100%) = 0,80 mJ t Qrr = 0,14 µs t Erec = 0,14 µs Copyright Vincotech 3,29 22 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) E (mWs) E ( mWs) 12 Eoff Eoff 9 8 Eoff Eoff 6 E o ff Eoff 6 4 3 2 Eon Eon Eo n Eon Eon E on 0 10 30 50 70 90 110 130 0 150 170 0 I C (A) 25 °C With an inductive load at 350 V V CE = V GE = ±15 V R gon = 2 Ω R goff = 2 Ω 125 °C T j: 1 2 3 4 150 °C V GE = IC = Figure 3. FWD ±15 V 88 A 5 T j: E rec = f(r g ) E ( mWs) E (mWs) R g ( Ω) 9 125 °C FWD E rec = f(I c) Erec 8 Figure 4. Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec 7 150 °C Typical reverse recovered energy loss as a f unct ion of collect or current 2,5 6 25 °C With an inductive load at 350 V V CE = 2 2 Erec 1,5 Erec 1,5 1 Erec 1 Erec 0,5 0,5 0 0 10 30 50 70 With an inductive load at 350 V V CE = V GE = ±15 V R gon = 2 Ω Copyright Vincotech 90 110 130 150 I C (A) 0 170 25 °C T j: 1 2 3 With an inductive load at 350 V V CE = 125 °C 150 °C V GE = IC= 23 ±15 V 88 A 4 5 6 7 8 r g (Ω) 9 25 °C T j: 125 °C 150 °C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) td(on) tf td(on) 0,1 0,1 tf tr tr 0,01 0,01 0,001 0,001 10 30 50 70 90 110 130 150 170 0 I C (A) (A) With an inductive load at 150 °C Tj= 1 2 3 4 5 6 7 8 9 r g (Ω) With an inductive load at 150 °C Tj = V CE = 350 V V CE = 350 V V GE = ±15 V V GE = ±15 V R gon = 2 Ω IC = 88 A R goff = 2 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,16 t rr (μs) t rr (μs) 0,12 trr trr 0,12 trr 0,09 trr 0,08 0,06 trr trr 0,04 0,03 0 0 10 30 50 70 90 110 130 150 170 0 I C (A) At 350 V V GE = ±15 V R gon = 2 Ω V CE= Copyright Vincotech 2 3 4 5 6 7 8 9 R g o n (Ω) 25 °C T j: 1 At V CE = 125 °C V GE = 150 °C IC= 24 350 V ±15 V 88 A 25 °C T j: 125 °C 150 °C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 12 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current 8 Qr Qr 9 6 Qr Qr 6 4 Qr Qr 3 2 0 At 0 10 30 50 70 90 110 130 150 170 0 1 2 3 4 5 6 7 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω V CE = At 25 °C T j: VCE= At 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V ±15 V 88 A 9 R g on (Ω) 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 160 I R M (A) I R M (A) 160 IRM IR M 120 120 IRM IRM IRM IRM 80 80 40 40 0 0 10 At 30 50 70 350 V V GE = ±15 V R gon = 2 Ω V CE = Copyright Vincotech 90 110 130 150 I C (A) 0 170 2 3 4 5 6 7 8 9 R go n (Ω) 25 °C T j: 1 At V CE = 125 °C V GE = 150 °C IC= 25 350 V ±15 V 88 A 25 °C T j: 125 °C 150 °C 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 12000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 12000 di F / dt dir r/dt di F / dt di r r/ dt 9000 9000 6000 6000 3000 3000 0 0 10 30 50 70 90 110 130 150 0 170 2 4 6 8 I C (A) 350 V V GE = ±15 V R gon = 2 Ω V CE = At 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V ±15 V 88 A 10 R g o n (Ω) 25 °C T j: 125 °C 150 °C IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 350 I C MAX I c CHIP 300 250 MODULE 200 Ic 150 V CE MAX 100 50 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 2 Ω R goff = 2 Ω Tj = Copyright Vincotech 26 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switching Definitons General conditions = 125 °C = 2Ω Without internal capacitor Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 2Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 250 125 tdoff % % VCE IC 200 100 VCE 90% VGE 90% 150 75 IC VGE 100 VCE 50 tdon tEoff 50 25 IC 10% VGE 10% 0 IC 1% VCE 3% VGE tEon 0 -50 -25 -0,1 0,1 0,3 0,5 0,7 -100 2,98 0,9 t (µs) 3,01 3,04 3,07 V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 20 V V GE (100%) = 20 V V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 90 A I C (100%) = 90 A t doff = t Eoff = 0,397 0,848 µs µs t don = t Eon = 0,094 0,120 µs µs Figure 3. IGBT Turn-of f Swit ching Wavef orms & def init ion of tf 3,1 3,13 Figure 4. 3,16 t (µs) IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 250 fitted % % VCE IC 100 200 IC 90% 75 150 IC 60% 50 100 IC 40% VCE 25 tr IC 90% 50 IC10% 0 tf 0 IC 10% IC -25 0,1 0,3 0,5 0,7 -50 3,09 0,9 t (µs) 3,099 3,108 3,117 3,135 3,144 t (µs) V C (100%) = 350 V V C (100%) = 350 V I C (100%) = 90 A I C (100%) = 90 A tf= 0,073 µs tr = 0,009 µs Copyright Vincotech 3,126 27 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switching Definitons Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 250 125 % % 200 Pon 100 Eon Poff 150 75 Eoff IC 1% 100 50 50 25 VCE 3% VGE 10% VGE 90% 0 0 tEon tEoff -25 -50 -0,1 0,1 0,3 0,5 0,7 3 0,9 3,03 3,06 3,09 P off (100%) = 31,42 kW P on (100%) = 31,42 kW E off (100%) = 6,68 mJ E on (100%) = 0,68 mJ t Eoff = 0,85 µs t Eon = 0,12 µs Figure 7. 3,12 3,15 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 Id % 100 trr 50 fitted 0 IRRM 10% Vd -50 -100 IRRM 90% IRRM 100% -150 -200 3,1 3,125 3,15 3,175 3,2 3,225 t (µs) V d (100%) = 350 V I d (100%) = 90 A I RRM (100%) = -130 A t rr = 0,086 µs Copyright Vincotech 28 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Out. Boost Switching Definitons Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 300 150 % % Id Qrr tQrr 50 Prec 250 100 200 150 0 Erec 100 tErec -50 50 -100 0 -150 3,08 3,13 3,18 3,23 3,28 -50 3,08 3,33 t (µs) 3,13 3,18 3,23 3,33 t (µs) I d (100%) = 90 A P rec (100%) = 31,42 kW Q rr (100%) = 5,86 µC E rec (100%) = 1,45 mJ t Qrr = 0,17 µs t Erec = 0,17 µs Copyright Vincotech 3,28 29 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Ordering Code & Marking Version without thermal paste 12mm housing with solder pins without thermal paste 12mm housing with Press-fit pins Ordering Code 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y NN-NNNNNNNNNNNNNN TTTTTTTVV WWYY UL Vinco LLLLL SSSS Text Datamatrix Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTTVV WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 52,2 6,9 Therm1 2 52,2 0 Therm2 3 36,2 6,75 S4 4 33,2 7,9 G14 5 33,2 4,9 G18 6 9,2 5,75 S2 7 6,2 6,9 G12 8 6,2 3,9 G16 9 2,7 0 DC- 10 0 0 DC- 11 12 13 2,7 0 2,7 2,7 2,7 5,4 DCDC- 14 0 5,4 DC- 15 2,7 12,75 GND 16 0 12,75 GND 17 2,7 15,45 GND 18 0 15,45 19 2,7 22,8 GND DC+ 20 0 22,8 DC+ 21 2,7 25,5 DC+ Pin X Y 22 0 25,5 DC+ 30 46 24 Function G13 23 2,7 28,2 DC+ 31 52,2 20,1 Ph 24 0 28,2 DC+ 32 49,5 22,8 Ph 25 18,3 22,45 S1 33 52,2 22,8 Ph 26 21,3 21,3 G15 34 49,5 25,5 Ph 27 21,3 24,3 G11 28 43 22,15 S3 29 46 21 G17 35 36 37 52,2 49,5 52,2 25,5 28,2 28,2 Ph Ph Ph Copyright Vincotech DC- Pin table [mm] 30 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Pinout Identification ID Component Voltage Current Function T11,T12,T15,T16 IGBT 650V 75A Buck Switch D11, D12 FWD 650V 100A Buck Diode T13,T14,T17,T18 IGBT 650V 75A Out. Boost Switch D13,D14,D17,D18 FWD 650V 50A Out. Boost Diode D43,D44,D47,D48 FWD 650V 50A Out. Boost Inverse Diode C1,C2 Capacitor 630V - DC Link Capacitor Rt NTC - - Thermistor Copyright Vincotech 31 Comment 13 Nov. 2015 / Revision 3 10-FY07NPA150SM01-L364F08 10-PY07NPA150SM01-L364F08Y datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: Modification: Pages 10-FY07NPA150SM01-L364F08-D3-14 13 Nov. 2015 Added Press-fit option 1, 30 DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 32 13 Nov. 2015 / Revision 3