30-P2126PA075SC-L288F09Y datasheet flow PACK 2 1200 V / 75 A Features flow 2 17mm housing ● IGBT4 (1200V) technology for low saturation losses and improved EMC behavior ● Compact and low inductive design ● Integrated temperature sensor Schematic Target applications ● Industrial drives Types ● 30-P2126PA075SC-L288F09Y Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 85 A 225 A 232 W Inverter Switch Collector-emitter voltage Collector current V CES IC T j=T jmax T S=80°C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j=T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S=80°C 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Parameter Conditions Symbol Value Unit 1200 V 85 A 150 A 154 W 175 °C Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax T j=T jmax T h =80°C T j=T jmax T h=80°C Module Properties Copyright Vincotech 2 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Characteristic Values Inverter Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,3 5,8 6,3 1,58 1,92 2,07 Static Gate-emitter threshold voltage V GE(th) V GE=V CE Collec tor-emitter saturation voltage V CEsat 0,0026 25 125 25 15 75 Collec tor-emitter cut-off c urrent I CES 0 1200 Gate-emitter leakage current I GES 20 0 Internal gate resistance Input capacitance - 150 2,39 25 V 1 125 25 120 125 10 rg µA nA Ω 4300 C ies f=1 MHz Reverse transfer c apac itanc e 125 V 0 25 25 pF 160 C res Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,41 K/W IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr tf E on Turn-off energy (per pulse) E off Copyright Vincotech 196 150 t d(off) Turn-on energy (per pulse) 178 150 25 R goff = 4 Ω R gon = 4 Ω ±15 Fall time 25 600 75 34 36 25 284 150 373 25 150 63 124 Q rFWD = 6,6 µC 25 Q rFWD = 14,1 µC 150 9,393 25 4,009 150 6,991 3 ns 6,174 mWs 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 1,75 2,05 Static 25 Forward voltage Reverse leakage current 75 VF - 150 1,72 25 1200 Ir 125 V 14 150 - µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,62 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy E rec Peak rate of fall of recovery current di /dt = 2443 A/µs di /dt = 2277 A/µs ±15 (di rf/dt )max 600 75 25 150 25 150 25 150 25 150 69 86 275 457 6,624 14,075 2,287 5,224 25 150 1859 724 A ns µC mWs A/µs Thermistor Copyright Vincotech 4 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 250 I C (A) I C (A) 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE= 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 75 Z t h( jj--s)(K/W) I C (A) 100 60 45 10-1 30 0,5 0,2 0,1 0,05 15 0,02 0,01 0,005 0 10-2 10-4 0 0 2 4 6 8 10 12 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= tp / T V CE = 10 V 125 °C R th(j-s) = 0,41 T j: Copyright Vincotech 150 °C 10-1 100 101 t p (s) 102 K/W IGBT thermal model values R th (K/W) 5 6,08E-02 τ (s) 1,41E+00 9,91E-02 1,99E-01 1,78E-01 4,61E-02 5,03E-02 1,41E-02 2,16E-02 1,42E-03 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F ) Z th(j-s) = f(t p) 250 Z t h(j h(j--s) (K/W) IF (A) 100 200 150 10-1 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 50 0 10-2 0 1 2 3 4 5 10-4 10-3 10-2 VF (V) tp = 250 µs 10-1 100 101 102 t p (s) 25 °C T j: 125 °C D= tp / T 150 °C R th(j-s) = 0,62 K/W FWD thermal model values R (K/W) 4,35E-02 τ (s) 4,66E+00 7,48E-02 5,44E-01 1,95E-01 8,13E-02 2,13E-01 2,26E-02 4,51E-02 5,48E-03 4,51E-02 5,92E-04 Thermistor Characteristics Copyright Vincotech 6 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) E (mWs) E (mWs) 25 Eon 16 Eon 20 12 Eon 15 Eo n 8 Eoff Eoff 10 E off Eoff 4 5 Eon Eoff Eon 0 0 0 30 60 90 120 150 0 I C (A) 25 °C With an inductive load at 600 V V CE = V GE = ±15 V R gon = 4 Ω R goff = 4 Ω T j: 4 8 125 °C 150 °C V GE = IC = Figure 3. FWD ±15 V 75 A 12 R g ( Ω) 150 °C Figure 4. FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) E (mWs) 8 Erec 20 125 °C T j: Typical reverse recovered energy loss as a f unct ion of collect or current E (mWs) 16 25 °C With an inductive load at 600 V V CE = 6 5 Erec 6 4 3 4 Erec Erec 2 2 1 Erec 0 0 0 Erec 30 60 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 4 Ω Copyright Vincotech 90 120 I C (A) 0 150 25 °C T j: 4 8 With an inductive load at 600 V V CE = 125 °C 150 °C V GE = IC= 7 ±15 V 75 A 12 16 r g (Ω) 20 25 °C T j: 125 °C 150 °C 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) td(on) td(on) tf tf 0,1 0,1 tr tr 0,01 0,01 0 30 60 90 120 150 0 I C (A) (A) With an inductive load at 150 °C Tj= 4 8 12 16 r g (Ω) 20 With an inductive load at 150 °C Tj = V CE = 600 V V CE = 600 V V GE = ±15 V V GE = ±15 V R gon = 4 Ω IC = 75 A R goff = 4 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,8 0,8 t rr (μs) t rr (μs) Typical reverse recovery t ime as a f unct ion of collect or current 0,6 trr 0,6 trr 0,4 trr 0,4 trr 0,2 0,2 trr 0 t 0 rr 0 30 60 90 120 150 0 I C (A) At 600 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech T j: 4 8 12 16 20 R g o n (Ω) 25 °C At V CE = 125 °C V GE = 150 °C IC= 8 600 V ±15 V 75 A 25 °C T j: 125 °C 150 °C 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 25 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current 16 Qr Qr 20 12 15 8 Qr 10 Qr 4 5 Qr 0 At 0 0 Qr 30 60 600 V ±15 V R gon = 4 Ω V CE = 120 150 0 4 8 12 16 20 R g on (Ω) I C (A) V GE = At 90 25 °C T j: VCE= At 125 °C V GE = 150 °C I C= Figure 11. FWD 600 V ±15 V 75 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 120 I R M (A) I R M (A) 120 IRM 90 90 IRM IRM 60 60 IRM 30 30 0 0 0 At IR M 30 60 600 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 90 120 I C (A) 0 150 T j: 4 8 12 16 20 I RM R go n (Ω) 25 °C At V CE = 125 °C V GE = 150 °C IC= 9 600 V ±15 V 75 A 25 °C T j: 125 °C 150 °C 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 4000 d i /d t (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current di F / dt di r r /dt 4000 di F / dt di r r/ dt 3000 3000 2000 2000 1000 1000 0 0 0 30 60 90 120 0 150 4 8 I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 600 V ±15 V 75 A 12 16 20 R g o n (Ω) IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 180 I C MAX I c CHIP 150 MODULE 120 Ic 90 60 V CE MAX 30 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 10 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switching Definitions Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 125 250 tdoff % % VCE IC 100 200 VCE 90% VGE 90% 75 150 IC VCE 50 VGE 100 tEoff tdon VGE 25 50 IC 1% VGE 10% 0 VCE 3% IC 10% 0 tEon -25 -0,1 -50 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 2,9 3 3,1 3,2 3,3 3,4 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 75 A t doff = 0,373 t Eoff = Figure 3. 0,772 V GE (0%) = 3,5 3,6 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 600 V I C (100%) = 75 A µs t don = 0,195 µs µs t Eon = Figure 4. 0,539 µs V GE (0%) = IGBT Turn-of f Swit ching Wavef orms & def init ion of tf IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 250 fitted % % VCE IC 100 IC 200 IC 90% 75 150 IC 60% VCE 50 IC 90% 100 IC 40% tr 25 50 IC10% 0 tf IC 10% 0 -25 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 0,55 -50 3,15 0,6 t (µs) 3,2 3,25 3,3 3,35 3,45 3,5 t (µs) V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 75 A I C (100%) = 75 A tf= 0,120 µs tr = 0,038 µs Copyright Vincotech 3,4 11 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 175 % % Eoff 100 150 Pon 125 Eon 75 100 Poff 50 75 50 25 VGE 90% IC 1% 25 VCE 3% VGE 10% 0 tEoff 0 tEon -25 -25 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 2,9 0,8 3 3,1 3,2 3,3 P off (100%) = 44,97 kW P on (100%) = 44,97 kW E off (100%) = 7,03 mJ E on (100%) = 9,36 mJ t Eoff = 0,77 µs t Eon = 0,54 µs Figure 7. 3,4 3,5 3,6 3,7 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 125 % Id 100 75 trr 50 25 Vd 0 IRRM 10% -25 -50 fitted -75 IRRM 90% IRRM 100% -100 -125 3,1 3,2 3,3 3,4 3,5 3,6 3,7 3,8 t (µs) V d (100%) = 600 V I d (100%) = 75 A I RRM (100%) = -85 A t rr = 0,455 µs Copyright Vincotech 12 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % Qrr Id % 100 100 50 Erec 75 tQrr tErec 0 50 -50 25 -100 0 -150 3 3,2 3,4 3,6 3,8 4 4,2 Prec -25 4,4 3,2 t (µs) 3,4 3,6 3,8 I d (100%) = 75 A P rec (100%) = 44,97 kW 13,41 µC E rec (100%) = 4,88 mJ t Qrr = 0,93 µs t Erec = 0,93 µs Copyright Vincotech 4,2 t (µs) Q rr (100%) = 125°C 4 25 25 ooCC 25°C 13 125 125 ooCC 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Ordering Code & Marking Version without thermal paste 17mm housing with thermal paste 17mm housing Ordering Code 30-P2126PA075SC-L288F09Y 30-P2126PA075SC-L288F09Y-/3/ NN-NNNNNNNN NNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS in packaging barcode as L288F09Y L288F09Y-/3/ Name Dat e code UL & Vinco Lot Serial N N-NN NN NN NNNNN NN N-NN NN NN NN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L288F09Y L288F09Y-/3/ Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Function Pin 30 X 68,5 Y 0 Function S11 G11 DC-1 DC-1 DC-1 DC-1 DC+1 DC+1 DC+1 31 32 33 34 35 36 37 38 68,5 64,7 61,7 58,7 56 53,3 50,6 39,4 2,7 36 36 36 36 36 36 36 DC+3 G16 S16 PH3 PH3 PH3 PH3 G14 0 2,7 5,4 0 DC+1 S13 G13 DC-2 DC-2 DC-2 DC-2 39 40 41 42 43 44 45 36,4 33,4 30,7 28 25,3 14,1 11,1 36 36 36 36 36 36 36 S14 PH2 PH2 PH2 PH2 G12 S12 32,2 40,5 40,5 43,2 4,05 0 2,7 0 NTC DC+2 DC+2 DC+2 46 47 48 49 8,1 5,4 2,7 0 36 36 36 36 PH1 PH1 PH1 Ph1 21 22 23 24 43,2 51,5 51,5 54,5 2,7 0 3 0 DC+2 S15 G15 DC-3 25 26 27 28 54,5 54,5 57,2 65,8 2,7 5,4 0 0 DC-3 DC+3 29 65,8 2,7 DC+3 Pin 1 2 3 4 X 0,9 0,9 3,9 3,9 Y 0 3 0 2,7 5 6 7 8 9 10 11 12 3,9 6,6 15,2 15,2 17,9 17,9 26,2 26,2 5,4 0 0 2,7 0 2,7 0 3 13 14 15 16 29,2 29,2 29,2 31,9 17 18 19 20 Copyright Vincotech DC+3 DC-3 DC-3 14 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Pinout Identification ID Component Voltage Current Function Comment T11,T12,T13,T14,T15, T16 IGBT 1200V 75A Inverter Switch IGC70T120T8RL D11,D12,D13,D14,D15, D16 FWD 1200V 75A Inverter Diode IDC40D120T6M NTC NTC - - Thermistor Copyright Vincotech 15 01 Jun. 2015 / Revision 1 30-P2126PA075SC-L288F09Y datasheet Packaging instruction Standard packaging quantity (SPQ) 42 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 2 packages see vincotech.com website. Document No.: Date: 30-P2126PA075SC-L288F09Y-D1-14 01 Jun. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 16 01 Jun. 2015 / Revision 1