VS-ST650C..L Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 790 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AC (B-PUK) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor control • Controlled DC power supplies TO-200AC (B-PUK) • AC controllers PRODUCT SUMMARY Package TO-200AC (B-PUK) Diode variation Single SCR IT(AV) 790 A VDRM/VRRM 2000 V, 2200 V, 2400 V VTM 2.07 V IGT 100 mA TJ -40 °C to 125 °C MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 1557 A 25 °C 10 100 60 Hz 10 700 50 Hz 510 60 Hz 475 Typical TJ UNITS 790 50 Hz VDRM/VRRM tq VALUES A kA2s 2000 to 2400 V 200 μs -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST650C..L VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 20 2000 2100 22 2200 2300 24 2400 2500 80 Revision: 15-Apr-14 Document Number: 93738 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST650C..L Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled IT(AV) IT(RMS) DC at 25 °C heatsink temperature double side cooled t = 10 ms t = 8.3 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t No voltage reapplied UNITS 790 (324) A 55 (85) °C 1857 10 100 No voltage reapplied 100 % VRRM reapplied VALUES 10 700 A 8600 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 9150 510 475 kA2s 370 347 t = 0.1 to 10 ms, no voltage reapplied 5100 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.04 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.13 kA2√s V Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.61 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.35 Maximum on-state voltage VTM Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 Maximum holding current IH mΩ Typical latching current V 600 TJ = 25 °C, anode supply 12 V resistive load IL mA 1000 SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned-on current dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Maximum turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs VR = 50, dV/dt = 20 V/μs, Gate 0 V 100 Ω, tp = 500 μs 200 μs BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA Revision: 15-Apr-14 Document Number: 93738 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST650C..L Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) VALUES TEST CONDITIONS typ. TJ = TJ maximum, tp ≤ 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM TJ = TJ maximum, tp ≤ 5 ms 200 - 100 200 50 - 2.5 - TJ = 25 °C 1.8 3.0 TJ = 125 °C 1.1 - TJ = 25 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C TJ = -40 °C VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD V 5.0 IGT DC gate voltage required to trigger A 20 TJ = -40 °C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied TJ = TJ maximum UNITS W 3.0 Maximum peak positive gate current DC gate current required to trigger max. mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled K/W 0.006 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 14 700 (1500) N (kg) 255 g TO-200AC (B-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION Single Side Double Side Single Side Double Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 15-Apr-14 Document Number: 93738 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST650C..L Series www.vishay.com Vishay Semiconductors 1 30 ST 6 5 0 C ..L Se rie s (Sin g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K / W 1 20 1 10 1 00 C o nduc tion An g le 90 30° 80 60 ° 9 0° 70 1 2 0° 1 8 0° 60 0 50 1 00 1 50 20 0 2 5 0 3 0 0 35 0 4 00 M a x im u m A llo w a b le H e a tsin k Te m p e ra tu re (° C ) M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re ( °C ) 1 30 S T 6 5 0 C ..L S e rie s (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 3 1 K / W 1 20 1 10 1 00 90 80 Co nd uc tio n Pe rio d 70 60 50 9 0° 40 6 0° 30 0 10 0 90 C o nduc tion A ng le 70 1 8 0° 50 1 2 0° 90° 40 60 ° 30 30° 20 0 10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0 15 0 0 12 5 0 R M S Lim it 10 0 0 750 C o nd uc tio n A ng le 500 S T 6 5 0 C ..L S e rie s T J = 1 2 5°C 250 0 0 10 0 90 C o nduc tion A ng le 70 1 8 0° 50 1 2 0° 90° 40 60 ° 30 30° 20 0 10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0 A v e ra g e O n - sta t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics 2 40 0 M ax im u m A v e ra g e O n - st a t e P o w e r Lo ss (W ) M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (°C ) ST 6 5 0 C ..L Se rie s (D o u ble S id e C o o le d ) R thJ-h s (D C ) = 0 .0 3 1 K / W 60 1 0 0 2 00 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00 Fig. 5 - On-State Power Loss Characteristics 13 0 80 80 0 10 0 0 1 2 00 1 40 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 11 0 60 0 1 8 0° 1 2 0° 90° 60° 30° 17 5 0 A v e ra g e O n - sta t e C u rre n t (A ) 12 0 4 00 20 0 0 M a xim u m A v e ra g e O n -st a te P o w e r Lo ss (W ) M a xim u m A llo w a b le H e a t sin k T e m p e ra t u re (°C ) ST 6 5 0 C ..L Se rie s (D o u ble S id e C o o le d ) R thJ-h s (D C ) = 0 .0 3 1 K / W 60 2 00 Fig. 4 - Current Ratings Characteristics 13 0 80 DC A v e ra g e O n -st a t e C u rre n t (A ) Fig. 1 - Current Ratings Characteristics 11 0 180 ° 20 A v e ra g e O n -s ta t e C u rre n t (A ) 12 0 1 2 0° 30° DC 1 8 0° 1 2 0° 90° 60° 30° 2 20 0 2 00 0 1 80 0 1 60 0 1 40 0 R M S Lim it 1 20 0 1 00 0 8 00 C o ndu ct io n P erio d 6 00 S T 6 5 0 C ..L S e rie s TJ = 1 2 5°C 4 00 2 00 0 0 20 0 4 00 600 80 0 10 0 0 1 20 0 1 4 00 A v e ra g e O n -st a te C urre n t (A ) Fig. 6 - On-State Power Loss Characteristics Revision: 15-Apr-14 Document Number: 93738 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST650C..L Series www.vishay.com 1 2 00 0 10 0 00 A t A ny R at e d L o a d C o nd itio n A n d W ith R at e d V RR M A p plie d Fo llo w in g Su rge . P e a k H a lf Sin e W a v e O n -st a t e C u rre n t (A ) P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A ) Vishay Semiconductors In itia l TJ = 1 2 5°C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 9 00 0 8 00 0 7 00 0 6 00 0 5 00 0 ST 6 5 0 C ..L S e r ie s 4 00 0 1 10 M a x im u m N o n R e p e t it iv e S u rg e C u rre n t V e rsu s P u lse T ra in D u ra tio n . C o n t ro l O f C o n d u c t io n M a y N o t B e M a in t a in e d . In it ia l TJ = 1 2 5 °C 1 0 00 0 N o V o lt a g e R e a p p lie d R a te d V R RM Re a p p lie d 90 0 0 1 1 00 0 10 0 80 0 0 70 0 0 60 0 0 S T6 5 0 C ..L S e rie s 50 0 0 40 0 0 0 .0 1 Nu m be r O f Equ al Am p litud e H alf C yc le C urren t Pulse s (N ) 0. 1 1 P u lse T ra in D u ra t io n (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instan tan eous On -stat e Current (A) 10000 TJ = 25°C 1000 T = 125°C J ST650C..L Series 100 0. 5 1 1.5 2 2.5 3 Instan tan eous O n -stat e V oltage (V ) Fig. 9 - On-State Voltage Drop Characteristics T ra n sie n t T h e rm a l Im pe d a nc e Z thJ- hs (K / W ) 0. 1 St e a d y St a te V a lu e R thJ-hs = 0 .0 7 3 K/ W (Sin gle Sid e C o o le d) R thJ-hs = 0 .0 3 1 K/ W ( D o u ble Sid e C o o le d ) 0 .0 1 ( D C O p e ra t io n ) ST 6 5 0 C ..L Se rie s 0 .0 0 1 0 .00 1 0.0 1 0 .1 1 10 S q ua re W a v e P u lse D u ra t io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 15-Apr-14 Document Number: 93738 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST650C..L Series www.vishay.com Vishay Semiconductors Re c t a n g u la r g a t e p ulse a ) R e c o m m e n d e d lo a d lin e f o r ra t e d d i/ dt : 2 0 V , 1 0 o h m s; t r<= 1 µ s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< = 1 µ s (1) (2) (3) (4) PG M PG M PG M PG M = = = = 10W , 20W , 40W , 60W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s (a ) (b ) 1 Tj=-40 °C Tj=25 °C Tj=125 °C In st a nt an e o us G a te V o lta g e (V ) 100 (1) (2) (3) (4) VG D IG D 0 .1 0 .0 0 1 F re q u e n c y L im ite d b y P G ( A V ) ST 6 5 0 C ..L Se rie s 0 .0 1 0 .1 1 10 1 00 In st a n t an e o us G a t e C u rre n t ( A ) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 65 0 C 24 L 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - L = PUK case TO-200AC (B-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95076 Revision: 15-Apr-14 Document Number: 93738 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20° ± 5° 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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