SD263C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 375 A FEATURES • High power FAST recovery diode series • 4.5 µs recovery time RoHS • High voltage ratings up to 4500 V COMPLIANT • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery DO-200AB (B-PUK) • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to JEDEC DO-200AB (B-PUK) • Maximum junction temperature 125 °C • Lead (Pb)-free PRODUCT SUMMARY IF(AV) 375 A TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) Ths IF(RMS) VALUES UNITS 375 A 55 °C 408 IFSM VRRM trr A 50 Hz 5500 60 Hz 5760 Range 3000 to 4500 V 4.5 µs TJ 125 TJ - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 SD263C..S50L Document Number: 93173 Revision: 14-May-08 For technical questions, contact: [email protected] IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 SD263C..S50L Series Fast Recovery Diodes (Hockey PUK Version), 375 A Vishay High Power Products FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current 725 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2√t for fusing 5760 A 4630 50 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum No voltage reapplied 4850 151 138 50 % VRRM reapplied 107 t = 0.1 to 10 ms, no voltage reapplied 1510 t = 8.3 ms I2√t °C 5500 t = 10 ms I2t A 55 (85) t = 10 ms No voltage reapplied UNITS 375 (150) 25 °C heatsink temperature double side cooled t = 8.3 ms IFSM Maximum I2t for fusing VALUES 180° conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS forward current TEST CONDITIONS kA2s 98 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.56 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.71 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.64 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 1.53 VFM Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 3.20 kA2√s V mΩ Maximum forward voltage drop V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) S50 5.0 TYPICAL VALUES AT TJ = 150 °C TEST CONDITIONS IFM Ipk SQUARE PULSE (A) dI/dt (1) (A/µs) 1000 100 Vr (V) trr AT 25 % IRRM (µs) - 50 4.5 Qrr (µC) 680 Irr (A) dir dt trr t Qrr IRM(REC) 240 Note (1) dI/dt = 25 A/µs, T = 25 °C J THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs DC operation single side cooled 0.11 DC operation double side cooled 0.05 Mounting force, ± 10 % Approximate weight Case style www.vishay.com 2 VALUES See dimensions - link at the end of datasheet For technical questions, contact: [email protected] UNITS °C K/W 9800 (1000) N (kg) 230 g DO-200AB (B-PUK) Document Number: 93173 Revision: 14-May-08 SD263C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.012 0.011 0.008 0.008 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 13 0 SD263C..S50L Series (Sin gle Side Cooled) R t hJ-hs (DC) = 0.11 K/W 120 110 100 90 80 C o nduc tio n A ng le 70 60 50 40 30 60° 90° 120° 30° 20 180° 10 0 50 100 150 200 250 300 M a x im um A llo w a b le H e a t sin k Te m p e ra t u re (°C ) Maxim um Allowable Heatsin k Tem perature ( °C) 130 SD 2 6 3 C ..S 5 0 L S e rie s (D o ub le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 5 K / W 12 0 11 0 10 0 90 80 C o ndu c tio n A ng le 70 60 30° 50 1 2 0° 1 8 0° 30 20 10 0 100 20 0 30 0 4 00 5 00 A v e r a g e Fo rw a rd C u rre n t (A ) Average Forward Curren t (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics 13 0 130 S D 2 6 3 C ..S 5 0 L Se rie s ( Sin g le S id e C o o le d ) R th J-hs (D C ) = 0 .1 1 K / W 12 0 11 0 10 0 90 80 C on du ctio n Pe rio d 70 60 50 3 0° 60 ° 40 30 90° 1 2 0° 20 1 8 0° DC 10 0 50 1 0 0 15 0 20 0 2 5 0 3 0 0 3 5 0 40 0 45 0 A v e ra g e F o rw a rd C u rr e n t (A ) Fig. 2 - Current Ratings Characteristics Document Number: 93173 Revision: 14-May-08 Maxim um Allowable Heatsin k Tem perature (°C) M a x im um A llo w a b le H e a t sin k T e m pe ra t u re ( °C ) 6 0° 9 0° 40 SD263C..S50L Series (D ouble Side Cooled) R thJ-hs (DC) = 0.05 K/W 120 110 100 90 80 C o nd uc tio n Pe rio d 70 30° 60 60° 90° 50 120° 40 180° 30 20 DC 10 0 200 400 600 800 Average Forward Current (A) Fig. 4 - Current Ratings Characteristics For technical questions, contact: [email protected] www.vishay.com 3 SD263C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 375 A 6000 1400 180° 120° 90° 60° 30° 1200 1000 RM S Lim it 800 600 Co n duc tio n An gle 400 SD263C..S50L Series TJ = 125°C 200 0 0 100 200 300 400 Peak Half Sin e W ave Forward Curren t (A) Maxim um Average Forward Power Loss (W ) 1600 M a xim u m N o n R e pe tit iv e Su rg e C u rre n t V e r su s P ulse Tr ain D ura tio n . In itial TJ = 1 2 5°C N o V o lt ag e R e a pp lie d 5 0 % R at e d V RR M Re ap plie d 5000 4000 3000 2000 S D 2 6 3 C ..S5 0L Se rie s 1000 0.01 500 0.1 Average Forward Current (A) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 5 - Forward Power Loss Characteristics 10000 DC 1 8 0° 1 2 0° 9 0° 6 0° 3 0° 2 0 00 1 7 50 1 5 00 1 2 50 R M S Lim it 1 0 00 7 50 C o ndu ctio n Pe rio d 5 00 S D 2 6 3 C ..S 5 0 L Se rie s T J = 1 2 5° C 2 50 Instantaneous Forward Current (A) M a xim u m A v e ra ge Fo rw a rd P o w e r L os s (W ) 2 2 50 0 TJ = 25°C TJ = 125°C 1000 SD263C..S50L Series 100 0 10 0 2 00 3 00 40 0 50 0 60 0 7 00 80 0 1 3 4 5 6 7 8 Fig. 9 - Forward Voltage Drop Characteristics Fig. 6 - Forward Power Loss Characteristics 1 A t A n y R a t e d Lo a d C o n d itio n A n d W ith 5 0 0 0 5 0 % R a te d V R RM A p p lie d F o llo w in g S u rg e In it ia l TJ = 1 2 5 °C 45 0 0 @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 15 0 0 S D 2 6 3 C ..S5 0 L S e r ie s 10 0 0 1 10 1 00 N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N ) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled T ra n sie n t Th e rm a l Im pe d a n c e Z thJ-hs ( K / W ) 55 0 0 P e a k Ha lf Sin e W a v e Fo rw a rd C u rre n t ( A ) 2 Instantan eous Forw ard Voltage (V ) A v e ra g e F o rw a r d C u rre n t (A ) www.vishay.com 4 1 Pulse Train Duration (s) S t e a d y St a t e V alu e R th J- hs = 0 .1 1 K/ W (S in gle Sid e C o o le d ) 0 .1 R th J- hs = 0 .0 5 K/ W ( D o u b le S id e C o o le d ) ( D C O p e ra t io n ) 0 .0 1 S D 2 6 3 C ..S5 0 L Se rie s 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 Sq u a r e W a v e P u lse D u rat io n ( s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristic For technical questions, contact: [email protected] Document Number: 93173 Revision: 14-May-08 SD263C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A 500 450 V FP I Fo rw a rd R ec o v e ry (V ) 400 TJ = 1 2 5°C 350 300 250 TJ = 2 5°C 200 150 100 SD 2 6 3 C ..S 5 0 L Se rie s 50 0 0 2 00 4 00 6 00 80 0 1 00 0 1 20 0 1 40 0 1 600 18 00 2 0 00 R a t e O f R ise O f Fo rw a rd C u rre n t - d i/ d t (A / u s) Fig. 11 - Typical Forward Recovery Characteristics 60 0 M a xim u m Re v e rse R e c o v e ry C urre n t - Irr (A ) M a x im um R e v e rse R e c o v e r y Tim e - Trr (µ s) 9 S D 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 °C ; V r > 1 0 0 V 8 7 I FM = 100 0 A Sine Pu lse 6 50 0 A 5 1 50 A 4 3 2 10 10 0 10 0 0 500 A 40 0 1 50 A 30 0 20 0 S D 2 6 3 C ..S5 0 L S e r ie s TJ = 1 2 5 °C ; V r > 1 0 0 V 10 0 0 0 50 1 00 15 0 20 0 2 50 3 0 0 Rate O f Fall O f Fo rw ard C urre nt - d i/dt (A /µs) Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 12 - Recovery Time Characteristics Fig. 14 - Recovery Current Characteristics 1E4 1 40 0 I FM = 1 00 0 A Sin e Pulse 1 20 0 1 00 0 500 A 8 00 150 A 6 00 4 00 SD 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 ° C ; V r > 1 0 0 V 2 00 0 0 50 10 0 1 50 2 00 2 50 30 0 10 jo ule s pe r pu lse Peak Forward Current (A) M a x im u m Re v e r se R e c o v e r y C h a r ge - Q rr (µ C ) I FM = 10 00 A Sine Pu lse 50 0 6 4 2 1 0 .5 1E3 0 .3 tp 1E2 1E 1 Document Number: 93173 Revision: 14-May-08 1E2 1E3 1E4 Pulse Basew idth ( µs) R ate O f Fall O f Fo rwa rd Curre nt - d i/dt ( A/µs) Fig. 13 - Recovery Charge Characteristics SD 2 6 3 C..S5 0 L Se rie s Si nu so ida l Pu lse TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v /d t = 1 0 0 0 V/ µs Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics For technical questions, contact: [email protected] www.vishay.com 5 SD263C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 375 A 1E 4 tp 4 00 1 5 00 1 00 0 200 1 00 Peak Forward Current (A) Peak Forward Current (A) 1E4 5 0 Hz 2 0 00 1E3 3000 4000 6 00 0 SD 2 6 3 C ..S5 0 L Se rie s Si nu so id al Pu l se TC = 5 5° C , V RR M= 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s tp 1 00 1E 3 600 1 00 0 1500 20 0 0 4 00 0 1E2 1E3 1E 2 1E1 1E 4 1E 2 Pulse Basew idth (µs) 1E4 Peak Forward Curren t (A) Peak Forward Current (A) SD 2 6 3 C ..S5 0 L Se r ie s T rap ezo id al P uls e TJ = 1 2 5°C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V /µ s d i/ d t = 3 0 0 A /µ s 1 0 jo ule s pe r pu lse 4 1E3 6 2 1 0. 5 SD 2 6 3 C ..S5 0 L S eri es T rape z oi dal Pu lse TJ = 1 2 5°C , V RRM = 1 5 0 0 V dv / d t = 1 0 0 0 V/ µ s di /d t = 1 0 0 A / µ s tp 1 0 jo u le s pe r pu lse 6 4 1E3 2 1 0. 5 0.3 0.3 1E 2 1E4 Fig. 18 - Frequency Characteristics 1E4 tp 1E 3 Pulse Basewidth ( µs) Fig. 16 - Frequency Characteristics 1E2 1E1 SD 2 6 3 C ..S5 0 L Se rie s Tr ape zo i dal Pu ls e TC = 5 5°C, V RRM = 15 00 V d v / dt = 10 0 0V / us , d i/ d t = 3 0 0 A / us 3000 10000 1E2 1E 1 400 50 Hz 20 0 1E3 1E2 1E1 1E4 1E 2 Pulse Basew idth (µs) 1E3 1E4 Pulse Basew idth (µs) Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics 1E 4 Peak Forward Current (A) tp 1E 3 1000 60 0 4 00 20 0 10 0 50 Hz 1 5 00 2 00 0 3 00 0 SD 2 6 3 C.. S5 0 L Se rie s T rap e zoi da l Pul se TC = 5 5°C , V RRM = 1 5 0 0 V dv / dt = 1 0 0 0 V/ u s, di /d t = 1 0 0 A / u s 4000 6 0 00 1E 2 1E1 1E 2 1E 3 1E4 Pulse Basew idth (µs) Fig. 20 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93173 Revision: 14-May-08 SD263C..S50L Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A ORDERING INFORMATION TABLE Device code SD 26 3 C 45 S50 L 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code 7 - L = PUK case DO-200AB (B-PUK) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93173 Revision: 14-May-08 http://www.vishay.com/doc?95246 For technical questions, contact: [email protected] www.vishay.com 7 Outline Dimensions Vishay Semiconductors DO-200AB (B-PUK) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) 0.8 (0.03) both ends 53 (2.09) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95246 Revision: 05-Nov-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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