VS-16TTS08S-M3, VS-16TTS12S-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A FEATURES 2, 4 Anode 4 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC®-JESD 47 2 1 TO-263AB (D2PAK) according • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 1 Cathode qualified J-STD-020, 3 Gate APPLICATIONS • Input rectification (soft start) PRODUCT SUMMARY Package TO-263AB (D2PAK) Diode variation Single SCR IT(AV) 10 A VDRM/VRRM 800 V, 1200 V VTM 1.4 V IGT 60 mA TJ -40 °C to +125 °C • Vishay input diodes, switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-16TTS..S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 μm) copper 2.5 3.5 Aluminum IMS, RthCA = 15 °C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) CHARACTERISTICS Sinusoidal waveform IRMS 10 16 VRRM/VDRM ITSM VT VALUES 10 A, TJ = 25 °C UNITS A 800/1200 V 200 A 1.4 V dV/dt 500 V/μs dI/dt 150 A/μs -40 to +125 °C VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-16TTS08S-M3 800 800 VS-16TTS12S-M3 1200 1200 10 Revision: 08-Jul-15 Document Number: 94893 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS08S-M3, VS-16TTS12S-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 144 10 ms sine pulse, no voltage reapplied 200 2000 A2s 1.4 V 24.0 m 1.1 V t = 0.1 ms to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 10 A, TJ = 25 °C Maximum reverse and direct leakage current Holding current Maximum latching current IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt A 10 ms sine pulse, rated VRRM applied I2t rt UNITS 16 Maximum I2t for fusing VT(TO) MAX. 10 I2t On-state slope resistance TYP. TC = 98 °C, 180° conduction, half sine wave Maximum I2t for fusing Threshold voltage VALUES TJ = 125 °C TJ = 25 °C TJ = 125 °C 0.5 VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C A2s 10 - 150 mA Anode supply = 6 V, resistive load,TJ = 25 °C 200 TJ = TJ max. linear to 80 % VDRM = Rg - k = Open 500 V/μs 150 A/μs TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 90 Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 μs 110 Revision: 08-Jul-15 Document Number: 94893 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS08S-M3, VS-16TTS12S-M3 Series www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS UNITS -40 to +125 For 10 s (1.6 mm from case) 260 Maximum thermal resistance, junction to case RthJC DC operation 1.3 Typical thermal resistance, junction to ambient RthJA PCB mount (1) 40 °C °C/W Approximate weight 2 g 0.07 oz. 16TTS08S Case style D2PAK (SMD-220) Marking device 16TTS12S Maximum Allowable Case Temperature (°C) 125 16TTS.. Series R thJC (DC) = 1.3 °C/W 120 115 Conduction Angle 110 105 100 30° 60° 95 90° 120° 180° 90 0 2 4 6 8 10 12 Max imum Average On-state Power Loss (W) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. 18 180° 120° 90° 60° 30° 16 14 12 RMS Limit 10 8 Conduction Angle 6 16TTS.. Series T J = 125°C 4 2 0 0 16TTS.. Series R thJC (DC) = 1.3 °C/W 115 Conduction Period 110 105 30° 60° 90° 120° 95 180° DC 90 0 2 4 6 8 10 12 3 4 5 6 7 8 9 10 11 14 16 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Max imum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 125 100 2 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics 120 1 25 DC 180° 120° 90° 60° 30° 20 15 RMS Limit 10 Conduction Period 5 16TTS.. Series TJ = 125°C 0 0 2 4 6 8 10 12 14 16 18 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 08-Jul-15 Document Number: 94893 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS08S-M3, VS-16TTS12S-M3 Series 180 Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..Series 80 1 10 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 180 160 140 120 100 16TTS.. Series 80 0.01 100 0.1 1 Number Of Equal Amplitude Half C ycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) 16TTS.. Series 100 10 T J = 25°C TJ = 125°C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 16TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 08-Jul-15 Document Number: 94893 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS08S-M3, VS-16TTS12S-M3 Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD 0.1 0.001 TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 16TTS.. Series 0.01 (3) (4) (2) (1) Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 16 T T S 12 S 1 2 3 4 5 6 7 TRL -M3 8 9 1 - Vishay Semiconductors product 2 - Current rating 3 - 4 - Circuit configuration: T = single thyristor Package: T = D2PAK 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage rating: voltage code x 100 = VRRM 7 - S = surface mountable 8 - 9 - None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free 08 = 800 V 12 = 1200 V ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16TTS08S-M3 50 1000 Antistatic plastic tubes VS-16TTS08STRR-M3 800 800 13" diameter reel VS-16TTS08STRL-M3 800 800 13" diameter reel VS-16TTS12S-M3 50 1000 Antistatic plastic tubes VS-16TTS12STRR-M3 800 800 13" diameter reel VS-16TTS12STRL-M3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?95032 Revision: 08-Jul-15 Document Number: 94893 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000