VS-16TTS08S-M3, VS-16TTS12S-M3 Series Datasheet

VS-16TTS08S-M3, VS-16TTS12S-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A
FEATURES
2, 4
Anode
4
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Designed
and
JEDEC®-JESD 47
2
1
TO-263AB (D2PAK)
according
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
1
Cathode
qualified
J-STD-020,
3
Gate
APPLICATIONS
• Input rectification (soft start)
PRODUCT SUMMARY
Package
TO-263AB (D2PAK)
Diode variation
Single SCR
IT(AV)
10 A
VDRM/VRRM
800 V, 1200 V
VTM
1.4 V
IGT
60 mA
TJ
-40 °C to +125 °C
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-16TTS..S-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
2.5
3.5
Aluminum IMS, RthCA = 15 °C/W
6.3
9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W
14.0
18.5
UNITS
A
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV)
CHARACTERISTICS
Sinusoidal waveform
IRMS
10
16
VRRM/VDRM
ITSM
VT
VALUES
10 A, TJ = 25 °C
UNITS
A
800/1200
V
200
A
1.4
V
dV/dt
500
V/μs
dI/dt
150
A/μs
-40 to +125
°C
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VS-16TTS08S-M3
800
800
VS-16TTS12S-M3
1200
1200
10
Revision: 08-Jul-15
Document Number: 94893
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VS-16TTS08S-M3, VS-16TTS12S-M3 Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle, 
non-repetitive surge current
ITSM
TEST CONDITIONS
10 ms sine pulse, rated VRRM applied
170
10 ms sine pulse, no voltage reapplied
200
144
10 ms sine pulse, no voltage reapplied
200
2000
A2s
1.4
V
24.0
m
1.1
V
t = 0.1 ms to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
10 A, TJ = 25 °C
Maximum reverse and direct leakage current
Holding current
Maximum latching current
IRM/IDM
IH
IL
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
A
10 ms sine pulse, rated VRRM applied
I2t
rt
UNITS
16
Maximum I2t for fusing
VT(TO)
MAX.
10
I2t
On-state slope resistance
TYP.
TC = 98 °C, 180° conduction, half sine wave
Maximum I2t for fusing
Threshold voltage
VALUES
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
0.5
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A, 
TJ = 25 °C
A2s
10
-
150
mA
Anode supply = 6 V, resistive load,TJ = 25 °C
200
TJ = TJ max. linear to 80 % VDRM = Rg - k = Open
500
V/μs
150
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
SYMBOL
TEST CONDITIONS
VALUES
UNITS
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Anode supply = 6 V, resistive load, TJ = - 10 °C
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
90
Anode supply = 6 V, resistive load, TJ = 25 °C
60
Anode supply = 6 V, resistive load, TJ = 125 °C
35
Anode supply = 6 V, resistive load, TJ = - 10 °C
3.0
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
μs
110
Revision: 08-Jul-15
Document Number: 94893
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
VALUES
TJ, TStg
Soldering temperature
TS
UNITS
-40 to +125
For 10 s (1.6 mm from case)
260
Maximum thermal resistance, 
junction to case
RthJC
DC operation
1.3
Typical thermal resistance, 
junction to ambient
RthJA
PCB mount (1)
40
°C
°C/W
Approximate weight
2
g
0.07
oz.
16TTS08S
Case style D2PAK (SMD-220)
Marking device
16TTS12S
Maximum Allowable Case Temperature (°C)
125
16TTS.. Series
R thJC (DC) = 1.3 °C/W
120
115
Conduction Angle
110
105
100
30°
60°
95
90°
120°
180°
90
0
2
4
6
8
10
12
Max imum Average On-state Power Loss (W)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
18
180°
120°
90°
60°
30°
16
14
12
RMS Limit
10
8
Conduction Angle
6
16TTS.. Series
T J = 125°C
4
2
0
0
16TTS.. Series
R thJC (DC) = 1.3 °C/W
115
Conduction Period
110
105
30°
60°
90°
120°
95
180° DC
90
0
2
4
6
8
10
12
3
4
5
6
7
8
9
10 11
14
16
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Max imum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
125
100
2
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
120
1
25
DC
180°
120°
90°
60°
30°
20
15
RMS Limit
10
Conduction Period
5
16TTS.. Series
TJ = 125°C
0
0
2
4
6
8
10
12
14
16
18
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 08-Jul-15
Document Number: 94893
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
180
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
160
140
120
100
16TTS..Series
80
1
10
200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
180
160
140
120
100
16TTS.. Series
80
0.01
100
0.1
1
Number Of Equal Amplitude Half C ycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
16TTS.. Series
100
10
T
J
= 25°C
TJ = 125°C
1
0
1
2
3
4
5
Instantaneous On-st ate Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
16TTS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 08-Jul-15
Document Number: 94893
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16TTS08S-M3, VS-16TTS12S-M3 Series
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Vishay Semiconductors
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
0.1
0.001
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
16TTS.. Series
0.01
(3)
(4)
(2)
(1)
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
16
T
T
S
12
S
1
2
3
4
5
6
7
TRL -M3
8
9
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
4
-
Circuit configuration:
T = single thyristor
Package:
T = D2PAK
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage rating: voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
9
-
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-16TTS08S-M3
50
1000
Antistatic plastic tubes
VS-16TTS08STRR-M3
800
800
13" diameter reel
VS-16TTS08STRL-M3
800
800
13" diameter reel
VS-16TTS12S-M3
50
1000
Antistatic plastic tubes
VS-16TTS12STRR-M3
800
800
13" diameter reel
VS-16TTS12STRL-M3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?95032
Revision: 08-Jul-15
Document Number: 94893
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000