VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 16 A FEATURES 2 (A) • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature TO-220AB 1 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 1 (K) (G) 3 Available APPLICATIONS PRODUCT SUMMARY Package TO-220AB Diode variation Single SCR • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge IT(AV) 10 A VDRM/VRRM 800 V, 1200 V VTM 1.4 V IGT 60 mA TJ - 40 °C to 125 °C DESCRIPTION The VS-16TTS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operating up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 13.5 17 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform IRMS VDRM/VRRM 10 16 Range (1) ITSM VT VALUES 10 A, TJ = 25 °C UNITS A 800/1200 V 200 A 1.4 V dV/dt 500 V/μs dI/dt 150 A/μs - 40 to 125 °C TJ Range Note (1) For higher voltage up to 1600 V contact factory VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V VS-16TTS08PbF, VS-16TTS08-M3 800 800 VS-16TTS12PbF, VS-16TTS12-M3 1200 1200 PART NUMBER Revision: 26-Jul-13 IRRM/IDRM AT 125 °C mA 10 Document Number: 94603 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM MAX. TC = 98 °C, 180° conduction, half sine wave 10 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 UNITS 16 A 144 200 I2t t = 0.1 to 10 ms, no voltage reapplied 2000 A2s VTM 10 A, TJ = 25 °C 1.4 V 24.0 m 1.1 V Maximum I2t for fusing Maximum on-state voltage drop Maximum reverse and direct leakage current TYP. 10 ms sine pulse, no voltage reapplied I2t On-state slope resistance VALUES 10 ms sine pulse, rated VRRM applied Maximum I2t for fusing Threshold voltage TEST CONDITIONS rt VT(TO) IRM/IDM TJ = 125 °C TJ = 25 °C TJ = 125 °C IH Anode supply = 6 V, resistive load, initial IT = 1 A 16TTS08PbF, 16TTS12PbF, TJ = 25 °C Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt 0.5 VR = Rated VRRM/VDRM Holding current A2s 10 - 150 mA 200 TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open 500 V/μs 150 A/μs TRIGGERING PARAMETER TEST CONDITIONS SYMBOL VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 65 °C 90 Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Anode supply = 6 V, resistive load, TJ = - 65 °C 3.0 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 26-Jul-13 TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 μs 110 Document Number: 94603 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS VALUES UNITS - 40 to 125 °C DC operation 1.3 62 Mounting surface, smooth and greased 0.5 Approximate weight Mounting torque 0.07 oz. maximum 12 (10) kgf · cm (lbf · in) 115 Conduction Angle 110 105 100 30° 60° 95 90° 120° 180° 90 0 2 4 6 8 10 12 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 16TTS08 Case style TO-220AB 120 16TTS12 18 180° 120° 90° 60° 30° 16 14 12 RMSLimit 10 8 Conduction Angle 6 16TTS.. Series T J = 125°C 4 2 0 0 1 Average On-state Current (A) 115 Conduction Period 110 105 30° 60° 90° 120° 95 180° DC 90 2 4 6 8 10 12 14 Average On-state Current (A) Fig. 2 - Current Rating Characteristics 16 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 16TTS.. Series R thJC (DC) = 1.3 °C/ W 100 3 4 5 6 7 8 9 10 11 Fig. 3 - On-State Power Loss Characteristics 125 120 2 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Revision: 26-Jul-13 g 6 (5) 16TTS.. Series R thJC (DC) = 1.3 °C/ W 0 2 minimum Marking device 125 °C/W 25 DC 180° 120° 90° 60° 30° 20 15 RMS Limit 10 Conduction Period 5 16TTS.. Series TJ = 125°C 0 0 2 4 6 8 10 12 14 16 18 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Document Number: 94603 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..PbF Series, VS-16TTS..-M3 Series 180 Vishay Semiconductors At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..Series 80 1 10 200 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ= 125°C No Vo ltage Reap plied Ra ted VRRM Rea pplied 180 160 140 120 100 16TTS.. Series 80 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equa l Amplitud e Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 16TTS.. Series 100 10 T = 25°C J TJ= 125°C 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Transient Thermal Impedanc e Z thJC (°C/ W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 16TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 26-Jul-13 Document Number: 94603 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors Rec tangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/ dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a ) (b ) VGD IGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) 0.01 0.1 (2) (1) Frequenc y Limited by PG(AV) 16TTS.. Series 0.1 0.001 (3) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 16 T T S 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - Circuit configuration: T = Single thyristor 4 - Package: T = TO-220AB 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - Environmental digit: S = Converter grade 08 = 800 V 12 = 1200 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16TTS08PbF 50 1000 Antistatic plastic tubes VS-16TTS08-M3 50 1000 Antistatic plastic tubes VS-16TTS12PbF 50 1000 Antistatic plastic tubes VS-16TTS12-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 26-Jul-13 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -M3 www.vishay.com/doc?95028 Document Number: 94603 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000