VS-16TTS..PbF Series, VS-16TTS..-M3 Series Datasheet

VS-16TTS..PbF Series, VS-16TTS..-M3 Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 16 A
FEATURES
2
(A)
• Designed
and
JEDEC-JESD47
qualified
according
to
• 125 °C max. operating junction temperature
TO-220AB
1
2
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
3
1 (K) (G) 3
Available
APPLICATIONS
PRODUCT SUMMARY
Package
TO-220AB
Diode variation
Single SCR
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
IT(AV)
10 A
VDRM/VRRM
800 V, 1200 V
VTM
1.4 V
IGT
60 mA
TJ
- 40 °C to 125 °C
DESCRIPTION
The VS-16TTS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operating up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
13.5
17
A
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
IRMS
VDRM/VRRM
10
16
Range (1)
ITSM
VT
VALUES
10 A, TJ = 25 °C
UNITS
A
800/1200
V
200
A
1.4
V
dV/dt
500
V/μs
dI/dt
150
A/μs
- 40 to 125
°C
TJ
Range
Note
(1) For higher voltage up to 1600 V contact factory
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
VS-16TTS08PbF, VS-16TTS08-M3
800
800
VS-16TTS12PbF, VS-16TTS12-M3
1200
1200
PART NUMBER
Revision: 26-Jul-13
IRRM/IDRM
AT 125 °C
mA
10
Document Number: 94603
1
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VS-16TTS..PbF Series, VS-16TTS..-M3 Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle, 
non-repetitive surge current
ITSM
MAX.
TC = 98 °C, 180° conduction, half sine wave
10
10 ms sine pulse, rated VRRM applied
170
10 ms sine pulse, no voltage reapplied
200
UNITS
16
A
144
200
I2t
t = 0.1 to 10 ms, no voltage reapplied
2000
A2s
VTM
10 A, TJ = 25 °C
1.4
V
24.0
m
1.1
V
Maximum I2t for fusing
Maximum on-state voltage drop
Maximum reverse and direct leakage current
TYP.
10 ms sine pulse, no voltage reapplied
I2t
On-state slope resistance
VALUES
10 ms sine pulse, rated VRRM applied
Maximum I2t for fusing
Threshold voltage
TEST CONDITIONS
rt
VT(TO)
IRM/IDM
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
16TTS08PbF, 16TTS12PbF, TJ = 25 °C
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
0.5
VR = Rated VRRM/VDRM
Holding current
A2s
10
-
150
mA
200
TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open
500
V/μs
150
A/μs
TRIGGERING
PARAMETER
TEST CONDITIONS
SYMBOL
VALUES
UNITS
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum peak gate power
Maximum required DC gate current to trigger
Maximum required DC gate 
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 65 °C
90
Anode supply = 6 V, resistive load, TJ = 25 °C
60
Anode supply = 6 V, resistive load, TJ = 125 °C
35
Anode supply = 6 V, resistive load, TJ = - 65 °C
3.0
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
Revision: 26-Jul-13
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
μs
110
Document Number: 94603
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance, 
junction to case
RthJC
Maximum thermal resistance, 
junction to ambient
RthJA
Typical thermal resistance, 
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
- 40 to 125
°C
DC operation
1.3
62
Mounting surface, smooth and greased
0.5
Approximate weight
Mounting torque
0.07
oz.
maximum
12 (10)
kgf · cm
(lbf · in)
115
Conduction Angle
110
105
100
30°
60°
95
90°
120°
180°
90
0
2
4
6
8
10
12
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
16TTS08
Case style TO-220AB
120
16TTS12
18
180°
120°
90°
60°
30°
16
14
12
RMSLimit
10
8
Conduction Angle
6
16TTS.. Series
T J = 125°C
4
2
0
0
1
Average On-state Current (A)
115
Conduction Period
110
105
30°
60°
90°
120°
95
180° DC
90
2
4
6
8
10
12
14
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
16
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
16TTS.. Series
R thJC (DC) = 1.3 °C/ W
100
3
4
5
6
7
8
9 10 11
Fig. 3 - On-State Power Loss Characteristics
125
120
2
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Revision: 26-Jul-13
g
6 (5)
16TTS.. Series
R thJC (DC) = 1.3 °C/ W
0
2
minimum
Marking device
125
°C/W
25
DC
180°
120°
90°
60°
30°
20
15
RMS Limit
10
Conduction Period
5
16TTS.. Series
TJ = 125°C
0
0
2
4
6
8
10
12
14
16
18
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94603
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
180
Vishay Semiconductors
At Any Rated Load Condition And With
Rated V RRMApplied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
160
140
120
100
16TTS..Series
80
1
10
200
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave On-state Current (A)
www.vishay.com
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ= 125°C
No Vo ltage Reap plied
Ra ted VRRM Rea pplied
180
160
140
120
100
16TTS.. Series
80
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equa l Amplitud e Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
16TTS.. Series
100
10
T = 25°C
J
TJ= 125°C
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Transient Thermal Impedanc e Z thJC (°C/ W)
Fig. 7 - On-State Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
16TTS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 26-Jul-13
Document Number: 94603
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Rec tangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a )
(b )
VGD
IGD
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
0.01
0.1
(2)
(1)
Frequenc y Limited by PG(AV)
16TTS.. Series
0.1
0.001
(3)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
16
T
T
S
12
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
Circuit configuration:
T = Single thyristor
4
-
Package:
T = TO-220AB
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit:
S = Converter grade
08 = 800 V
12 = 1200 V
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-16TTS08PbF
50
1000
Antistatic plastic tubes
VS-16TTS08-M3
50
1000
Antistatic plastic tubes
VS-16TTS12PbF
50
1000
Antistatic plastic tubes
VS-16TTS12-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 26-Jul-13
www.vishay.com/doc?95222
TO-220AB PbF
www.vishay.com/doc?95225
TO-220AB -M3
www.vishay.com/doc?95028
Document Number: 94603
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000