VS-16TTS..SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 Anode • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Designed and qualified for industrial level 1 Cathode D2PAK 3 Gate APPLICATIONS • Input rectification (soft start) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VT at 10 A < 1.4 V ITSM 200 A VRRM 800 V/1200 V DESCRIPTION The VS-16TTS..SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 μm) copper 2.5 3.5 Aluminum IMS, RthCA = 15 °C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) Sinusoidal waveform IRMS VALUES 10 16 VRRM/VDRM ITSM VT 10 A, TJ = 25 °C dV/dt dI/dt UNITS A 800/1200 V 200 A 1.4 V 500 V/μs 150 A/μs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA VS-16TTS08SPbF 800 800 VS-16TTS12SPbF 1200 1200 TJ VOLTAGE RATINGS PART NUMBER Document Number: 94589 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 10 www.vishay.com 1 VS-16TTS..SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM 170 10 ms sine pulse, no voltage reapplied 200 A t = 0.1 ms to 10 ms, no voltage reapplied 2000 VTM 10 A, TJ = 25 °C VT(TO) Maximum latching current 10 ms sine pulse, rated VRRM applied I2√t rt Holding current 16 144 Maximum on-state voltage drop IRM/IDM UNITS 10 200 Maximum I2√t for fusing Maximum reverse and direct leakage current TC = 98 °C, 180° conduction, half sine wave MAX. 10 ms sine pulse, rated VRRM applied I2t Threshold voltage VALUES TYP. 10 ms sine pulse, no voltage reapplied Maximum I2t for fusing On-state slope resistance TEST CONDITIONS TJ = 125 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V, resistive load, initial IT = 1 A IL Anode supply = 6 V, resistive load A2√s 1.4 V 24.0 mΩ 1.1 V 0.5 VR = Rated VRRM/VDRM IH A2s 10 - 100 mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/μs Maximum rate of rise of turned-on current dI/dt 150 A/μs TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 90 Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 °C TJ = 125 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 0.9 4 μs 110 Document Number: 94589 Revision: 08-Jun-10 VS-16TTS..SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS UNITS - 40 to 125 For 10 s (1.6 mm from case) 240 Maximum thermal resistance, junction to case RthJC DC operation 1.3 Typical thermal resistance, junction to ambient RthJA PCB mount (1) 40 °C °C/W 2 Approximate weight g 0.07 Case style D2PAK (SMD-220) Marking device oz. 16TTS08S 16TTS12S Maximum Allowable Case Temperature (°C) 125 16TTS.. Series R thJC (DC) = 1.3 °C/W 120 115 Conduction Angle 110 105 100 30° 60° 95 90° 120° 180° 90 0 2 4 6 8 10 12 Max imum Average On-state Power Loss (W) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. 18 180° 120° 90° 60° 30° 16 14 12 RMS Limit 10 8 Conduction Angle 6 16TTS.. Series T J = 125°C 4 2 0 0 Maximum Allowable Case Temperature (°C) 125 16TTS.. Series R thJC (DC) = 1.3 °C/W 115 Conduction Period 110 105 100 30° 60° 90° 120° 95 180° DC 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Document Number: 94589 Revision: 08-Jun-10 2 3 4 5 6 7 8 9 10 11 Fig. 3 - On-State Power Loss Characteristics Max imum Average On-state Power Loss (W) Fig. 1 - Current Rating Characteristics 120 1 Average On-state Current (A) Average On-state Current (A) 25 DC 180° 120° 90° 60° 30° 20 15 RMS Limit 10 Conduction Period 5 16TTS.. Series TJ = 125°C 0 0 2 4 6 8 10 12 14 16 18 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-16TTS..SPbF High Voltage Series Peak Half Sine Wave On-state Current (A) 180 Peak Half Sine Wave Forward Current (A) Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..Series 80 1 10 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 180 160 140 120 100 16TTS.. Series 80 0.01 100 0.1 1 Number Of Equal Amplitude Half C ycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) 16TTS.. Series 100 10 T J = 25°C TJ = 125°C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 16TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94589 Revision: 08-Jun-10 VS-16TTS..SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 16TTS.. Series 0.1 0.001 0.01 (3) (4) 0.1 (2) (1) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 16 T T S 12 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating 3 - TRL PbF 8 9 Circuit configuration: T = Single thyristor 4 - Package: T = TO-220AC 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage rating: Voltage code x 100 = VRRM 7 - S = TO-220 D2PAK (SMD-220) version 8 - 08 = 800 V 12 = 1200 V None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Document Number: 94589 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1