VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 16 A FEATURES • Designed and qualified for industrial level 2 (A) • Fully isolated package (VINS = 2500 VRMS) • UL E78996 approved • 125 °C max. operating junction temperature 1 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 1 (K) TO-220AB FULL-PAK (G) 3 Available APPLICATIONS • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge PRODUCT SUMMARY Package TO-220AB FP Diode variation Single SCR IT(AV) 10 A VDRM/VRRM 800 V, 1200 V DESCRIPTION VTM 1.4 V IGT 60 mA TJ - 40 °C to 125 °C The VS-16TTS..FP... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 13.5 17 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES Sinusoidal waveform 10 16 IRMS VDRM/VRRM V 200 A 10 A, TJ = 25 °C 1.4 V 500 V/μs 150 A/μs - 40 to 125 °C dV/dt dI/dt TJ Range A 800/1200 ITSM VT UNITS VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V VS-16TTS08FPPbF, VS-16TTS08FP-M3 800 800 VS-16TTS12FPPbF, VS-16TTS12FP-M3 1200 1200 PART NUMBER IRRM/IDRM AT 125 °C mA 10 Revision: 26-Jul-13 Document Number: 94381 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TC = 70 °C, 180° conduction, half sine wave 10 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 16 UNITS A 144 200 I2t t = 0.1 to 10 ms, no voltage reapplied 2000 A2s VTM 10 A, TJ = 25 °C 1.4 V 24.0 m 1.1 V Maximum I2t for fusing Maximum on-state voltage drop Maximum reverse and direct leakage current TYP. MAX. 10 ms sine pulse, rated VRRM applied I2t Threshold voltage VALUES 10 ms sine pulse, no voltage reapplied Maximum I2t for fusing On-state slope resistance TEST CONDITIONS rt VT(TO) IRM/IDM TJ = 125 °C TJ = 25 °C TJ = 125 °C IH Anode supply = 6 V, resistive load, initial IT = 1 A 16TTS08FP, 16TTS12FP, TJ = 25 °C Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt 0.5 VR = Rated VRRM/VDRM Holding current TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open A2s 10 - 150 mA 200 500 V/μs 150 A/μs VALUES UNITS TRIGGERING PARAMETER TEST CONDITIONS SYMBOL PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 90 Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 26-Jul-13 TEST CONDITIONS TJ = 25 °C TJ = 125 °C VALUES UNITS 0.9 4 μs 110 Document Number: 94381 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS VALUES UNITS - 40 to 125 °C DC operation 2.5 62 Mounting surface, smooth and greased 0.5 Approximate weight Mounting torque 0.07 oz. maximum 12 (10) kgf · cm (lbf · in) 16TTS.. Series 120 100 80 30° 90° 120° 180° 40 2 4 6 8 10 12 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 140 0 12 180° 120° 90° 60° 30° 10 RMSLimit 16 14 8 6 Conduction Angle 4 16TTS..FP Series TJ= 125°C 2 0 0 16TTS.. Series 120 100 80 30° 60° 90° 120° 180° DC 20 0 2 4 6 8 10 12 14 16 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Revision: 26-Jul-13 2 4 6 8 10 12 Average On-state Current (A) 140 40 16TTS12FP Fig. 3 - On-State Power Loss Characteristics 18 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 16TTS08FP 18 Average On-state Current (A) Fig. 1 - Current Rating Characteristics 60 g 6 (5) Case style TO-220AB FULL-PAK (94/V0) 60° 2 minimum Marking device 60 °C/W 25 DC 180° 120° 90° 60° 30° 20 15 10 RMSLimit Conduction Period 5 16TTS..FP Series TJ = 125°C 0 0 4 8 12 16 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Document Number: 94381 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series 180 Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Peak Half Sine Wa ve On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initia l TJ= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..FP Series 80 1 10 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ= 125°C No Vo ltag e Reapp lied Rated VRRM Reapp lied 180 160 140 120 100 16TTS..FP Series 80 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) 16TTS..FP Series 100 10 TJ= 25°C TJ= 125°C 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Thermal Impedance Z thJC (°C/W) 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.1 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 26-Jul-13 Document Number: 94381 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series www.vishay.com Vishay Semiconductors Recta ngula r ga te p ulse a)Recommend ed loa d line for ra ted d i/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b )Recommend ed load line for <= 30% rated d i/ dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) 1 VGD IGD 0.1 0.001 TJ = -10 °C TJ = 125 °C TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) 0.1 (1) Frequency Limited by PG(AV) 16TTS..FP Series 0.01 (2) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 16 T T S 12 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating, RMS value 3 - Circuit configuration: T = Single thyristor 4 - Package: 5 - Type of silicon: T = TO-220AB S = Converter grade 6 - Voltage code x 100 = VRRM 7 - FULL-PAK 8 - Environmental digit: 08 = 800 V 12 = 1200 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-16TTS08FPPbF 50 1000 Antistatic plastic tubes VS-16TTS08FP-M3 50 1000 Antistatic plastic tubes VS-16TTS12FPPbF 50 1000 Antistatic plastic tubes VS-16TTS12FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 26-Jul-13 www.vishay.com/doc?95072 TO-220FP PbF www.vishay.com/doc?95069 TO-220FP -M3 www.vishay.com/doc?95456 Document Number: 94381 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 (2 places) R 0.5 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments 4.8 4.6 Diodes 1. - Anode/open 2. - Cathode 3. - Anode 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95072 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000