Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification
1995 Sep 22
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
FEATURES
DESCRIPTION
 High efficiency
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343N package.
 Small size discrete power amplifier
 900 MHz and 1.9 GHz operating
areas
 Gold metallization ensures
excellent reliability.
lfpage
4
3
1
2
PINNING
APPLICATIONS
 Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Top view
MBK523
Marking code: T5.
Fig.1 SOT343N.
QUICK REFERENCE DATA
RF performance at Tamb = 25 C in a common-emitter test circuit.
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
c
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
1.9
3.6
200
5
50
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms
0.9
6
650
10
50
0.9
6
360
12.5
50
MODE OF OPERATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter

20
V
collector-emitter voltage
open base

10
V
emitter-base voltage
open collector

2.5
V

250
mA
VCBO
collector-base voltage
VCEO
VEBO
IC
collector current (DC)
IC(AV)
average collector current
Ptot
total power dissipation
Tstg
Tj

250
mA

400
mW
storage temperature
65
+150
C
junction temperature

175
C
up to Ts = 102 C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 102 C; note 1;
Ptot = 400 mW
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
VALUE
UNIT
180
K/W
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
20

V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
10

V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5

V
ICES
collector cut-off current
VCE = 6 V; VBE = 0

100
A
hFE
DC current gain
IC = 50 mA; VCE = 5 V
25

Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz

3
pF
Cre
feedback capacitance
IC = 0; VCE = 6 V; f = 1 MHz

2
pF
MBG431
103
handbook, full pagewidth
Zth j-a
(K/W)
δ=1
0.75
102
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
tp
P
δ= T
t
tp
T
1
10−6
10−5
10−4
10−3
10−2
10−1
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
MLC819
2.0
handbook, halfpage
Cc
(pF)
1.5
1.0
0.5
0
0
Fig.3
1995 Sep 22
2
4
6
8
10
V CB (V)
Collector capacitance as a function of
collector-base voltage.
4
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
APPLICATION INFORMATION
RF performance at Tamb = 25 C in a common-emitter test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
c
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
1.9
3.6
200
5; typ. 7
50; typ. 60
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms
0.9
6
650
10
50
0.9
6
360
12.5
50
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
MLC820
10
handbook, halfpage
Gp
ηc
(dB)
8
MBG194
100
ηc
80
16
handbook, halfpage
Gp
(%)
ηc
(%)
Gp
(dB)
80
12
Gp
6
60
4
40
2
20
0
0
100
200
300
60
ηc
8
40
4
20
0
0.3
0
400
500
P L (mW)
20
0.5
0.7
Pulsed, class-AB operation.
Pulsed, class-AB operation.
VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for PL = 200 mW.
VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for PL = 600 mW.
Fig.4
1995 Sep 22
Power gain and efficiency as functions
of load power; typical values.
Fig.5
5
0.9
1.1
P L (mW)
Power gain and efficiency as functions
of load power; typical values.
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
TR1
bias transistor, BC548 or equivalent
note 1
C1, C4, C7
capacitor; notes 2 and 3
120 pF
C2
capacitor; note 2
6.8 pF
C3
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C6
capacitor; note 2
1.9 pF
DIMENSIONS
C8
Philips multilayer capacitor
1 nF, 10 V
C9
Philips capacitor
1500 F, 10 V
L1
6 turns enamelled 0.7 mm copper wire
length 3.5 mm
length 3 mm
L4
2 turns enamelled 0.7 mm copper wire
L2, L3
RF choke, Philips
R1
metal film resistor
275 
R2
metal film resistor
100 
R3
metal film resistor
10 
2222 032 14152
4312 020 36690
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
+Vbias
handbook, full pagewidth
+VCC
R1
R2
C9
L3
R3
TR1
L2
C4
C8
L4
L1
C1
C7
DUT
C2
C3
C5
C6
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22
CATALOGUE No.
6
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
TR1
bias transistor, BC548 or equivalent
note 1
C1, C6, C7, C8
capacitor; notes 2 and 3
24 pF
C2
capacitor; note 2
0.4 pF
C3
capacitor; note 2
2.4 pF
C4
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C9, C10
Philips capacitor
1500 F, 10 V
L1, L2
RF choke, Philips
R1, R2
metal film resistor
75 
R3, R4
metal film resistor
10 
2222 032 14152
4330 030 36301
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
handbook, full pagewidth
+Vbias
R1
L1
R2
L2
+VCC
TR1
C9
C10
C7
C8
C6
C1
DUT
C2
C3
C4
C5
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22
CATALOGUE No.
7
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
PACKAGE OUTLINE
Plastic surface-mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343N
1995 Sep 22
EUROPEAN
PROJECTION
8
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
1995 Sep 22
9
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1995 Sep 22
10
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/01/pp11
Date of release: 1995 Sep 22