DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector 4 lfpage The distribution of the active areas across the surface of the device gives an excellent temperature profile. 1 2 Top view 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 25 V VCEO collector-emitter voltage open base 15 V IC DC collector current 150 mA Ptot total power dissipation up to Ts = 145 C (note 1) 1 W hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 C 80 130 fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 7 GHz GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 16 dB IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C 12 dB 850 mV Vo output voltage dim = 60 dB; IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 25 V VCEO collector-emitter voltage open base 15 V VEBO emitter-base voltage open collector 2 V IC DC collector current 150 mA Ptot total power dissipation up to Ts = 145 C (note 1) 1 W Tstg storage temperature 65 150 C Tj junction temperature 175 C Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 13 2 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER THERMAL RESISTANCE CONDITIONS thermal resistance from junction to soldering point up to Ts = 145 C (note 1) 30 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V 1 A hFE DC current gain IC = 100 mA; VCE = 10 V 80 130 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 2 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 7 pF Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 1.2 pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 7 GHz GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C 16 dB IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C 12 dB 900 mV Vo output voltage note 1 note 2 850 mV d2 second order intermodulation distortion IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 C; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz 58 dB IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 C; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz 53 dB Notes 1. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = 60 dB; fp = 445.25 MHz; Vq = Vo 6 dB; fq = 453.25 MHz; Vr = Vo 6 dB; fr = 455.25 MHz; measured at f(p+qr) = 443.25 MHz. 2. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = 60 dB; fp = 795.25 MHz; Vq = Vo 6 dB; fq = 803.25 MHz; Vr = Vo 6 dB; fr = 805.25 MHz; measured at f(p+qr) = 793.25 MHz. 1995 Sep 13 3 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 ;;;;;; VCC handbook, full pagewidth C4 L6 C5 L5 VBB C3 input 75 Ω C1 C6 L3 R1 output 75 Ω R2 L1 L2 L4 DUT C7 C2 R3 R4 MBB284 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO. C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627 C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108 C4 (note 1) miniature ceramic plate capacitor 10 nF L1 microstripline 75 length 7 mm; width 2.5 mm L2 microstripline 75 length 22mm; width 2.5 mm L3 (note 1) 1.5 turns 0.4 mm copper wire L4 microstripline 75 L5 Ferroxcube choke 5 H L6 (note 1) 0.4 mm copper wire 25 nH R1 metal film resistor 10 k 2322 180 73103 R2 (note 1) metal film resistor 200 2322 180 73201 R3, R4 metal film resistor 27 2322 180 73279 2222 629 08103 int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm 3122 108 20153 length 30 mm Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness 1 1 16 inch; thickness of copper sheet 32 inch. 1995 Sep 13 4 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 handbook, full pagewidth VBB VCC C3 C5 R1 75 Ω input L5 R3 C1 L3 L1 L2 C2 C6 75 Ω output L4 C7 R2 R4 L6 C4 MBB299 handbook, full pagewidth 80 mm 60 mm MBB298 handbook, full pagewidth MBB297 Fig.3 Intermodulation distortion test printed-circuit board. 1995 Sep 13 5 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MBB300 MBB294 1.2 160 handbook, halfpage P handbook, halfpage tot (W) h FE 1.0 0.8 120 0.6 0.4 80 0.2 40 0 0 50 100 150 Ts 200 ( o C) 0 40 80 120 160 I C (mA) VCE = 10 V; Tj = 25 C. Fig.5 DC current gain as a function of collector current. Fig.4 Power derating curve. MBB295 MBB296 8 3 handbook, halfpage handbook, halfpage fT (GHz) C re (pF) 6 2 4 1 2 0 0 0 4 8 12 0 16 20 VCB (V) 120 160 VCE = 10 V; f = 1 GHz; Tamb = 25 C. Feedback capacitance as a function of collector-base voltage. 1995 Sep 13 80 I C (mA) IE = 0; f = 1 MHz; Tj = 25 C. Fig.6 40 Fig.7 6 Transition frequency as a function of collector current. NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MBB292 MBB293 45 45 handbook, halfpage handbook, halfpage d im (dB) d im (dB) 50 50 55 55 60 60 65 65 70 20 40 60 80 70 20 100 120 I C (mA) VCE = 10 V; Vo = 900 mV; Tamb = 25 C; f(p+qr) = 443.25 MHz. Fig.8 40 60 80 VCE = 10 V; Vo = 850 mV; Tamb = 25 C; f(p+qr) = 793.25 MHz. Intermodulation distortion as a function of collector current. Fig.9 Intermodulation distortion as a function of collector current. MBB291 MBB290 45 45 handbook, halfpage handbook, halfpage d2 (dB) d2 (dB) 50 50 55 55 60 60 65 65 70 20 100 120 I C (mA) 40 60 80 70 20 100 120 I C (mA) 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C; f(p+q) = 450 MHz. VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C f(p+q) = 810 MHz. Fig.10 Second order intermodulation distortion as a function of collector current. Fig.11 Second order intermodulation distortion as a function of collector current. 1995 Sep 13 7 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MEA951 60 MEA952 50 handbook, halfpage handbook, Z halfpage L (Ω) ZL (Ω) 50 40 40 RL RL 30 30 20 20 10 10 0 –10 XL 0 0.25 0.50 XL 0 0.75 1.0 POUT (W) 0 0.5 1 POUT (W) 1.5 VCE = 7.5 V; f = 900 MHz. VCE = 10 V; f = 900 MHz. Fig.12 Load impedance as a function of output power. Fig.13 Load impedance as a function of output power. MEA953 60 MEA948 10 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) 50 8 ri RL 40 xi 6 30 4 20 XL 10 2 0 0 0 0.5 1 POUT (W) 1.5 0 0.25 0.50 0.75 1.0 POUT (W) VCE = 12.5 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.14 Load impedance as a function of output power. Fig.15 Input impedance as a function of output power. 1995 Sep 13 8 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MEA949 MEA950 10 10 handbook, halfpage handbook, halfpage Zi (Ω) Zi (Ω) 8 8 ri ri 6 6 xi xi 4 4 2 2 0 0 0 0.5 0 1.5 1 0.5 1 POUT (W) 1.5 POUT (W) VCE = 10 V; f = 900 MHz. VCE = 12.5 V; f = 900 MHz. Fig.16 Input impedance as a function of output power. Fig.17 Input impedance as a function of output power. MEA945 MEA947 1.5 80 handbook, halfpage handbook, halfpage η (%) V CE = 12.5 V P OUT (W) V CE = 12.5 V 70 7.5 V 10 V 1 10 V 7.5 V 60 0.5 50 0 40 0 0.5 1 POUT (W) 1.5 0 100 200 300 P IN (mW) f = 900 MHz. f = 900 MHz. Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power. 1995 Sep 13 9 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MBB289 MEA946 40 10 handbook, halfpage handbook, halfpage Gp (dB) G UM V (dB) = CE 12.5 V 8 30 6 10 V 20 7.5 V 4 10 2 0 0 0 0.5 1 POUT (W) 1.5 10 10 2 103 f (MHz) 10 IC = 100 mA; VCE = 10 V; Tamb = 25 C. f = 900 MHz. Fig.21 Maximum unilateral power gain as a function of frequency. Fig.20 Power gain as a function of output power. 1995 Sep 13 10 4 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 50 handbook, full pagewidth 25 100 10 250 +j 10 0 25 50 100 ∞ 250 –j 250 10 100 25 MBB288 50 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 . Fig.22 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 150 o 180 o 50 30 o 40 30 20 10 0o 30 o 150 o 60 o 120 o 90 o MBB286 IC = 100 mA; VCE = 10 V; Tamb = 25 C. Fig.23 Common emitter forward transmission coefficient (S21). 1995 Sep 13 11 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 90 o handbook, full pagewidth 60 o 120 o 150 o 30 o 0.1 0.2 180 o 0.3 0.4 0.5 0.6 0o 30 o 150 o 60 o 120 o 90 o MBB285 IC = 100 mA; VCE = 10 V; Tamb = 25 C. Fig.24 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 +j 0 10 25 50 100 250 ∞ –j 250 10 100 25 50 MBB287 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 . Fig.25 Common emitter output reflection coefficient (S22). 1995 Sep 13 12 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 PACKAGE OUTLINE Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 1995 Sep 13 REFERENCES IEC JEDEC JEITA SC-73 13 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 1995 Sep 13 14 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1995 Sep 13 15 NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/03/pp16 Date of release: 1995 Sep 13