SO T2 3 BFR505 NPN 9 GHz wideband transistor Rev. 4 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). The transistor is encapsulated in a plastic SOT23 envelope. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 20 V VCES collector-emitter voltage RBE = 0 - - 15 V IC DC collector current - - 18 mA Ptot total power dissipation up to Ts = 135 C - - 150 mW hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = ic = 0 A; VCB = 6 V; f = 1 MHz - 0.3 - pF fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz - 9 - GHz GUM maximum unilateral IC = 5 mA; VCE = 6 V; power gain Tamb = 25 C; f = 900 MHz - 17 - dB IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz - 10 - dB IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz 13 14 - dB S212 insertion power gain [1] BFR505 NXP Semiconductors NPN 9 GHz wideband transistor Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit F s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz - 1.2 1.7 dB s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz - 1.6 2.1 dB s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz - 1.9 - dB [1] noise figure Ts is the temperature at the soldering point of the collector tab. 2. Pinning information Table 2. Discrete pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Symbol 3 3 1 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number BFR505 Package Name Description Version - plastic surface mounted package; 3 leads SOT23 4. Marking Table 4. Type number Marking code[1] BFR505 31* [1] BFR505 Product data sheet Marking table * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 20 V VCES collector-emitter voltage RBE = 0 VEBO emitter-base voltage IC DC collector current continuous Ptot total power dissipation up to Ts = 135 C Tstg storage temperature Tj junction temperature [1] [1] - 15 V - 2.5 V - 18 mA - 150 mW 65 +150 C - 175 C Ts is the temperature at the soldering point of the collector tab. 6. Thermal characteristics Table 6. Symbol Rth(j-s) [1] Thermal characteristics Parameter Conditions [1] from junction to soldering point Typ Unit 260 K/W Ts is the temperature at the soldering point of the collector tab. 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Product data sheet Min Typ Max Unit nA ICBO collector cut-off current IE = 0 A; VCB = 6 V - - 50 hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 Ce emitter capacitance IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz - 0.4 - pF Cc collector capacitance IE = ie = 0 A; VCB = 6 V; f = 1 MHz - 0.4 - pF Cre feedback capacitance IC = ic = 0 A; VCB = 6 V; f = 1 MHz - 0.3 - pF fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz - 9 - GHz GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz - 17 - dB IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz - 10 - dB IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz 13 14 - dB S212 BFR505 Conditions insertion power gain All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 [1] © NXP B.V. 2011. All rights reserved. 3 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor Table 7. Characteristics …continued Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit F s = opt; IC = 5 mA; VCE = 6 V;Tamb = 25 C; f = 900 MHz - 1.2 1.7 dB s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz - 1.6 2.1 dB s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz - 1.9 - dB IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; f = 900 MHz - 4 - dBm - 10 - dBm noise figure PL1 output power at 1 dB gain compression ITO third order intercept point [1] [2] GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 G UM = 10 log ------------------------------------------------------dB 2 2 1 – S 11 1 – S 22 [2] IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and f(2qp) = 904 MHz. mra718 200 mra719 250 hFE Ptot (mW) 200 150 150 100 100 50 50 0 0 50 100 150 0 10−3 200 Ts (°C) 10−2 10−1 1 10 102 IC (mA) VCE = 6 V. Fig 1. Power derating curve. BFR505 Product data sheet Fig 2. DC current gain as a function of collector current. All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor mra720 0.4 Cre (pF) mra721 12 fT (GHz) (1) 0.3 (2) 8 0.2 4 0.1 0 0 2 4 6 8 0 10−1 10 VCB (V) 1 102 10 IC (mA) Tamb = 25 C; f = 1 GHz. IC = 0 A; f = 1 MHz. (1) VCE = 6 V. (2) VCE = 3 V. Fig 3. Feedback capacitance as a function of collector-base voltage. Fig 4. mra764 25 gain (dB) Transition frequency as a function of collector current. mra765 25 gain (dB) 20 20 (1) (2) 15 15 10 10 5 5 0 (1) (2) (3) 0 0 4 8 12 0 4 IC (mA) 8 12 IC (mA) VCE = 6 V; f = 2 GHz. VCE = 6 V; f = 900 MHz. (1) MSG. (1) MSG. (2) GUM. (2) Gmax. (3) GUM. Fig 5. Gain as a function of collector current. BFR505 Product data sheet Fig 6. Gain as a function of collector current. All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor mra766 50 mra767 50 gain (dB) gain (dB) 40 40 (1) 30 (1) 30 (2) (2) 20 20 10 0 10 102 (3) 10 (3) 103 0 104 102 10 103 f (MHz) VCE = 6 V; IC = 1.25 mA. VCE = 6 V; IC = 5 mA. (1) GUM. (1) GUM. (2) MSG. (2) MSG. (3) Gmax. (3) Gmax. Fig 7. Gain as a function of frequency. Fig 8. mra726 5 20 Gass (dB) (1) 15 Fmin (dB) 4 Gain as a function of frequency. mra727 5 (1) Fmin (dB) 4 10 Gass 3 10 (5) 5 2 5 0 1 −5 0 102 3 (3) (4) Gass 2 1 0 10−1 20 Gass (dB) 15 (2) (2) Fmin (6) (7) 104 f (MHz) (3) 1 10 Fmin 0 (4) IC (mA) −5 104 103 f (MHz) VCE = 6 V. VCE = 6 V. (1) f = 900 MHz. (1) IC = 5 mA. (2) f = 1000 MHz. (2) IC = 1.25 mA. (3) f = 2000 MHz. (3) IC = 5 mA. (4) f = 2000 MHz. (4) IC = 1.25 mA. (5) f = 1000 MHz. (6) f = 900 MHz. (7) f = 500 MHz. Fig 9. Minimum noise figure and associated available gain as functions of collector current. BFR505 Product data sheet Fig 10. Minimum noise figure and associated available gain as functions of frequency. All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor pot. unst. region 135° 90° 1.0 +1 +0.5 0.8 45° +2 0.6 stability circle 180° +0.2 0 0.4 +5 Fmin = 1.3 dB 0.2 0.5 Γopt 2 F = 1.5 dB 1 10 0.2 0° 0 F = 2 dB F = 3 dB −0.2 −2 −0.5 −135° −5 −45° −1 1.0 −90° mra728 Zo = 50 . VCE = 6 V; IC = 5 mA; f = 900 MHz. Fig 11. Noise circle figure. pot. unst. region 135° 90° 1.0 +1 +0.5 0.8 45° +2 0.6 Fmin = 1.9 dB Γopt +0.2 0.4 +5 stability circle 180° 0.2 0 0.2 0.5 F = 2.5 dB 1 2 5 10 0° 0 F = 3 dB F = 4 dB −0.2 −135° −5 −2 −0.5 −45° −1 −90° 1.0 mra729 Zo = 50 . VCE = 6 V; IC = 5 mA; f = 2000 MHz. Fig 12. Noise circle figure. BFR505 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 1 0.5 2 5 3 GHz 10 0° 0 40 MHz −5 −0.2 −2 −0.5 −135° −45° −1 1.0 −90° mra722 Zo = 50 . VCE = 6 V; IC = 5 mA. Fig 13. Common emitter input reflection coefficient (S11). 90° 135° 180° 15 12 40 MHz 9 45° 6 3 GHz 3 −135° 0° −45° −90° mra723 VCE = 6 V; IC = 5 mA. Fig 14. Common emitter forward transmission coefficient (S21). BFR505 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor 90° 135° 45° 3 GHz 180° 0.5 0.4 0.3 0.2 0.1 40 MHz 0° −135° −45° −90° mra724 VCE = 6 V; IC = 5 mA. Fig 15. Common emitter reverse transmission coefficient (S12). 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 0.5 1 −0.2 −135° 2 5 0° 0 −5 3 GHz −2 −0.5 10 40 MHz −45° −1 −90° 1.0 mra725 Zo = 50 . VCE = 6 V; IC = 5 mA. Fig 16. Common emitter output reflection coefficient (S22). BFR505 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 17. Package outline. BFR505 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BFR505 v.4 20110907 Product data sheet - BFR505 v.3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. BFR505 v.3 (9397 750 13396) 20040720 Product data sheet - BFR505_CNV v.2 BFR505_CNV v.2 19971204 Product specification - - BFR505 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BFR505 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BFR505 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 7 September 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 BFR505 NXP Semiconductors NPN 9 GHz wideband transistor 12. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 September 2011 Document identifier: BFR505