UNISONIC TECHNOLOGIES CO., LTD UTT3205 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and excellent efficiency. This device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts. 1 TO-220 FEATURES * RDS(ON)<8 mΩ @VGS=10V * Ultra Low Gate Charge ( 146nC max ) * Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT3205L-TA3-T UTT3205G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-510.c UTT3205 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Continuous (VGS=10V) ID 110 Drain Current A Pulsed (Note 2) IDM 390 Avalanche Current (Note 2) IAR 62 A 20 Repetitive (Note 2) EAR mJ Avalanche Energy Single Pulsed (Note 3) EAS 450 Power Dissipation (TC=25°C) PD 200 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. TJ=25°C, L=138μH, RG=25Ω, IAS=62A THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 0.75 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA Drain-Source Leakage Current IDSS VDS=55V,VGS=0V Forward VGS=+20V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V /△T △ BV Breakdown Voltage Temperature Coefficient DSS J Reference to 25°C, ID=1mA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-Resistance (Note) RDS(ON) VGS=10V, ID=62A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=44V, ID=62A, VGS=10V Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=28V, ID=62A, RG=4.5Ω, VGS=10V (Note) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Internal Drain Inductance LD Internal Source Inductance LS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=62A ,VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Note: Pulse width≤400μs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 55 25 +100 -100 V μA nA nA V/°C 3.0 8 V mΩ 0.057 1.4 3247 781 211 pF pF pF 146 35 54 nC nC nC ns ns ns ns nH nH 1.3 V 110 A 390 A 14 101 50 65 4.5 7.5 2 of 5 QW-R502-510.c UTT3205 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-510.c UTT3205 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VGS RG VDD VGS D.U.T. VGS 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Switching Test Circuit Switching Waveforms QG VGS QGS QGD VD Charge Gate Charge Test Circuit L VDS Gate Charge Waveform Driver RG VDD D.U.T. IAS VGS BVDSS tp ID(t) VDS(t) VDD IAS 0.01Ω Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tp Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R502-510.c UTT3205 Preliminary Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 10 20 30 40 50 60 70 0 Drain-Source Breakdown Voltage, BVDSS(V) 0 0 Drain-Source On-State Resistance Characteristics 20 1.0 1.5 2.0 2.5 3.0 0.5 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 12 10 Drain Current, ID (A) 16 Drain Current, ID (A) Drain Current vs. Gate Threshold Voltage 12 8 4 8 6 4 2 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-510.c