IRF7748L1 Data Sheet (437 KB, EN)

IRF7748L1TRPbF
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
Applications
RoHS Compliant, Halogen Free 
Lead-Free (Qualified up to 260°C Reflow) 
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Industrial Qualified
VDSS
VGS
RDS(on)
60V min
±20V max
1.7m@ 10V
Qgd
Vgs(th)
40nC
2.9V
Qg
tot
146nC
SC
M2
S
S
S
S
S
D
G
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline  SB
S
D
L6
M4
L4
L6
L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
Package Type
IRF7748L1TRPbF
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7748L1TRPbF
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy 
Avalanche Current 
8
Units
V
A mJ
A
3.0
(
DS(on) m
I D = 89A
6
4
Typical R
, Drain-to -Source On Resistance (m)
R
DS(on)
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
EAS
IAR
Max.
60
±20
148
104
28
592
129
89
T J = 125°C
2
T J = 25°C
V GS = 6V
2.5
V GS = 7V
2.0
V GS = 10V
1.5
V GS = 12V
1.0
0
0
2
4
6
V GS,
8
10
12
14
16
18
20
Gate -to -Source Voltage (V)
25
50
75
100
125
150
175
200
I D , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET Website.
 Surface mounted on 1 in. square Cu board, steady state.
1
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© 2012 International Rectifier
 TC measured with thermocouple mounted to top (Drain) of part.
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 0.033mH, RG = 50, IAS = 89A.
February 18, 2013
IRF7748L1TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage
60
–––
VDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.7
VGS(th)
Gate Threshold Voltage
2.0
VGS(th)/TJ
Gate Threshold Voltage Temp. Coefficient
IDSS
Drain-to-Source Leakage Current
Units
–––
V
VGS = 0V, ID = 250µA
V/°C
Reference to 25°C, ID = 2mA
2.2
m
VGS = 10V, ID = 89A 
2.9
4.0
V
–––
–––
-9.9
–––
–––
20
mV/°C
–––
–––
250
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre– Vth Gate-to-Source Charge
Post– Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
176
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
146
31
12
40
63
52
82
1.3
19
104
100
-100
–––
220
–––
–––
–––
–––
–––
–––
–––
–––
–––
td(off)
Turn-Off Delay Time
–––
54
–––
tf
Ciss
Coss
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
77
8075
1150
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
540
–––
Coss
Output Capacitance
–––
5390
–––
VGS=0V, VDS = 1.0V,ƒ =1.0MHz
Coss
Output Capacitance
–––
850
–––
VGS=0V, VDS = 48V,ƒ =1.0MHz
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ. Max.
–––
–––
85
–––
–––
592
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
58
113
–––
–––
ns
nC
IGSS
0.022 –––
Conditions
VDS = VGS, ID = 250µA
µA
nA
S
VDS =60 V, VGS = 0V
VDS =60V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
VDS = 10V, ID =89A
nC nC 
ns
pF VDS = 30V
VGS = 10V
ID = 89A
See Fig.9
VDS = 16V,VGS = 0V
VDD = 30V, VGS = 10V
ID = 89A
RG= 1.8
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
Diode Characteristics IS
ISM
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 89A,VGS = 0V 
TJ = 25°C ,IF = 89A,VDD = 30V
di/dt = 100A/µs 
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
Absolute Maximum Ratings
Symbol
Parameter
PD @TC = 25°C Power Dissipation 
PD @TC = 100°C Power Dissipation 
PD @TA = 25°C Power Dissipation 
Peak Soldering Temperature
TP
Operating Junction and
TJ
Storage Temperature Range
TSTG
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient 
RqJA
Junction-to-Ambient 
RqJA
Junction-to-Ambient 
RqJA
Junction-to-Can 
RqJC
Junction-to-PCB Mounted
RqJA-PCB
Max.
94
47
3.3
270
-55 to + 175
Typ.
–––
12.5
20
–––
–––
Units
W
°C
Max.
45
–––
–––
1.6
0.5
Units
°C/W
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effec ve Transient Thermal Impedance, Junc on‐to‐Case Notes:
 Surface mounted on 1 in. square Cu board, steady state.
 TC measured with thermocouple incontact with top (Drain) of part.
 Repetitive rating; pulse width limited by max. junction temperature.
 Surface mounted on 1 in. square Cu
board (still air).
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 Used double sided cooling, mounting pad with large heatsink.
 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
 R is measured at TJ of approximately 90°C.
 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
1000
1000
100
BOTTOM
BOTTOM
100
10
4.25V
4.25V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 25V
60µs PULSE WIDTH
ID, Drain-to-Source Current(A)
10
Fig 5. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
ID = 89A
VGS = 10V
1.6
1.2
0.8
0.4
2
3
4
5
6
7
-60
VGS, Gate-to-Source Voltage (V)
ID= 89A
Coss = Cds + Cgd
Ciss
Coss
1000
60
100
140
180
14
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
20
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
-20
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
Crss
100
VDS = 48V
12
VDS = 30V
VDS= 12V
10
8
6
4
2
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.25V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.25V
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© 2012 International Rectifier
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
February 18, 2013
IRF7748L1TRPbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
100
10
TJ = 25°C
1
VGS = 0V
0.4
0.6
0.8
1.0
1.2
1000
100µsec
100
10
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.4
1
10
100
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
4.5
VGS(th), Gate threshold Voltage (V)
160
ID, Drain Current (A)
DC
0.1
0.1
0.2
OPERATION IN THIS AREA
LIMITED BY RDS(on)
120
80
40
0
4.0
3.5
3.0
2.5
2.0
ID = 1.0A
1.5
ID = 10mA
ID = 1.0mA
ID = 250µA
1.0
0.5
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
TJ , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction Temperature
EAS , Single Pulse Avalanche Energy (mJ)
600
ID
11.4A
19.1A
BOTTOM 89A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
140
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 89A
EAR , Avalanche Energy (mJ)
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 )
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
19a, 19b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 3)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 18a. Gate Charge Test Circuit
V(BR)DSS
tp
DRIVER
L
D.U.T
RG
IAS
20V
7
tp
Qgodr
Fig 18b. Gate Charge Waveform
15V
VDS
Qgd
+
V
- DD
A
0.01
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
DirectFET™Board Footprint, L6 Outline (Large Size Can, 6-Source Pads).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
S
S
S
S
S
S
D
G
D
D
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
DirectFET® Outline Dimension, L6 Outline
(Large Size Can, 6-Source Pads).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
L1
L2
M
P
R
METRIC
MIN MAX
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
3.95 4.05
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
IMPERIAL
MIN
MAX
0.356
0.360
0.270
0.280
0.232
0.236
0.022
0.026
0.023
0.024
0.046
0.048
0.039
0.040
0.029
0.030
0.015
0.017
0.053
0.057
0.100
0.104
0.155
0.159
0.210
0.214
0.027
0.029
0.003
0.007
0.001
0.003
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
GATE MARKING
+
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
+
NOTE:
Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as IRF7748L1TRPBF).
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
IMPERIAL
METRIC
MIN
CODE
MAX
MIN
MAX
12.992
A
330.00
N.C
N.C
0.795
B
20.20
N.C
N.C
0.504
C
12.80
0.520
13.20
D
0.059
1.50
N.C
N.C
E
3.900
99.00 100.00
3.940
F
N.C
N.C
0.880
22.40
G
0.650
16.40
0.720
18.40
H
0.630
15.90
0.760
19.40
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
4.69
0.476
11.90
12.10
0.154
0.161
3.90
4.10
0.623
0.642
15.90
16.30
0.291
0.299
7.40
7.60
0.283
0.291
7.20
7.40
0.390
0.398
9.90
10.10
0.059
N.C
1.50
N.C
0.059
0.063
1.50
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information† Industrial†† *
Qualification Level Moisture Sensitivity Level
DirectFET
Yes
RoHS Compliant
†
††
†††
MSL1
(per JEDEC J-STD-020D†††)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions. Revision History
Date
2/13/13
Comments
TR1 option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Interna onal Rec fier, please visit h p://www.irf.com/whoto‐call/
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© 2012 International Rectifier
February 18, 2013