RoHS RoHS IRF3205 Series SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (110A, 55Volts) DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. D D G G D FEATURES S S TO-263(D2PAK) (IRF3205H) TO-220AB (IRF3205A) RDS(ON) = 0.010Ω @ VGS = 10V D Ultra low gate charge(150nC max.) Low reverse transfer capacitance (C RSS = 210pF typical) Fast switching capability 100% avalanche energy specified D (Drain) Improved dv/dt capability 175°C operation temperature PRODUCT SUMMARY ID (A) 110 ID (A), Package Limited 75 VDSS (V) 55 RDS(ON) (Ω) 0.010 @ V GS = 10V QG(nC) max. 150 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 55 V DGR Drain to Gate voltage R GS =20KΩ 55 V GS ID Gate to Source voltage UNIT V ±20 V GS =10V, T C =25°C 110 Continuous Drain Current (Note 1) V GS =10V, T C =100°C 80 A I DM Pulsed Drain current(Note 2) I AR Avalanche current(Note 2) 62 E AR Repetitive avalanche energy(Note 2 ) 20 mJ 5 V /ns 200 W 1.3 W /°C dv/dt 390 Peak diode recovery dv/dt(Note 3) Total power dissipation PD TJ T STG TL T C =25°C Derating factor above 25 ° C Operation junction temperature -55 to 175 Storage temperature -55 to 175 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.6mm from case 300 10 (1.1) Note: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A . 2 . Repetitive rating: pulse width limited by junction temperature. 3 . I SD ≤ 62 A, di/dt ≤ 207 A/µs, V DD ≤ V (BR)DSS , T J ≤ 175 °C. www.nellsemi.com Page 1 of 7 ºC lbf . in (N . m) RoHS RoHS IRF3205 Series SEMICONDUCTOR Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(c-s) Thermal resistance, case to heatsink Rth(j-a) Thermal resistance, junction to ambient Min. Typ. UNIT Max. 0.75 ºC/W 0.50 62 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL V(BR)DSS ▲V (BR)DSS/▲T J I DSS TEST CONDITIONS PARAMETER Drain to source breakdown voltage V GS = 0V, I D = 250µA Breakdown voltage temperature coefficient I D = 1mA, referenced to 25°C Drain to source leakage current Min. Typ. Max. 55 V V/ºC 0.057 V DS =55V, V GS =0V T C = 25°C 25 V DS =44V, V GS =0V T C =150°C 250 μA Gate to source forward leakage current V GS = 20V, V DS = 0V 100 Gate to source reverse leakage current V GS = -20V, V DS = 0V -100 R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 62A (Note 1) V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA Forward transconductance V DS =25V, I D =62A I GSS g fS nA C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance t d(ON) Turn-on delay time tr t d(OFF) UNIT Rise time Turn-off delay time tf Fall time LD Internal drain inductance LS Internal source inductance QG Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) E AS Single pulse avalanche energy(Note 2) 8.0 2 10 mΩ 4 V 44 S 3240 V DS = 25V, V GS = 0V, f =1MHz pF 780 210 14 100 V DD = 28V, I D = 62A,R G = 4.5Ω, V GS = 10V (Note 1) ns 50 65 1.5 Between lead, 6mm from package and center of die nH 7.5 150 V DS = 44V, V GS = 10V, I D = 62A 35 nC 55 l AS = 62A, L= 138μH 1050 270 mJ SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD I s (Is D ) PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT V Diode forward voltage I SD = 62A, V GS = 0V 1.3 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 110 D (Drain) I SM Pulsed source current G (Gate) 390 A S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 62A, V GS = 0V, dI F /dt = 100A/µs t ON Forward turn-on time Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD) Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% . 2. L=138μH, I AS ≤ 62A, R G =25Ω, T J ≤ 175° C www.nellsemi.com Page 2 of 7 70 110 ns 145 220 nC IRF3205 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME IRF 3205 A MOSFET series N-Channel, IR series Current & Voltage rating, lD & VDS 110A / 55V Package type A = TO-220AB H = TO-263 (D2PAK) Fig.1 Typical output characteristics 10 3 10 2 10 1 Drain-to-Source Current,l D (A) V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 4.5V 20µs pulse width T J =25°C 1 0.1 1 Drain-to-Source Current,l D (A) 4.5V 10 1 20µs pulse width T J =175°C 1 10 2 10 Drain-to-Source voltage, V DS (V) Drain-to-Source voltage, V DS (V) Fig.3 Typical transfer characteristics Fig.4 Normalized On-Resistance vs. Temperature 10 3 T J = 25°C T J = 175°C 10 2 10 1 1 10 2 V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 1 0.1 10 2 10 V DS =25V 20µs pulse width 6 4 8 10 12 Drain-to-Source on-resistance, R DS(on) (Normalized) Drain-to-Source Current,l D (A) 10 3 Fig.2 Typical output characteristics Gate-to-Source voltage, V GS (V) www.nellsemi.com 2.5 l D =107A 2.0 1.5 1.0 0.5 V GS =10V 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature,T J (°C) Page 3 of 7 IRF3205 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Typical gate charge vs. Gate-to-Source voltage Fig.5 Typical capacitance vs. Drain-to-Source voltage 16 6000 4000 Gate-to-Source voltage,V GS (V) 5000 Capacitance,C (pF) l D = 62A V GS = 0V, f =1MHZ C iss = C gs +C gd ( C ds = shorted ) C rss = C gd C oss = C ds +C gd Ciss 3000 2000 Coss 1000 Crss 14 12 V DS = 44V V DS = 27V V DS = 11V 10 8 6 4 2 0 0 10 1 0 100 20 60 80 100 120 Total gate charge, Q G (nC) Drain-to-Source voltage, V DS (V) Fig.8 Maximum safe operating area Fig.7 Typical Source-Drain diode forward voltage 10 4 10 3 Operation in This Area is Limited by R DS(ON) T J = 17 5°C 10 2 Drain current, l D (A) Reverse drain current, l SD (A) 40 10 T J = 25 °C 1 10 3 10µs 100µs 10 2 1ms 10ms 10 Note: 1. T C = 25°C 2. T J = 175°C 3. Single Pulse V GS = 0V 1 0.1 0.2 0.8 2.0 1.4 2.6 10 1 Drain-to-Source voltage, V DS (V) Source-to-Drain voltage, V SD (V) Fig.9 Maximum drain current vs. Case temperature 120 LIMITED BY PACKAGE Drain Current, l D (A) 100 80 60 40 20 0 25 50 75 100 125 150 Case temperature, T C ( ° C) www.nellsemi.com 100 Page 4 of 7 175 1000 IRF3205 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.10 Maximum effective transient thermal lmpedance, Junction-to-Case Thermal response, Rth(j-c) (°C/W) 1 D = 0.5 0.2 0.1 0.1 PDM 0.05 Single pulse (Thermal response) 0.02 0.01 t1 t2 Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration, t 1 (sec) Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms RD V DS V DS 90% V GS RG D.U.T. + - V DD 10V V GS Pulse width ≤ 1µs Duty Factor ≤ 0.1% 10% t d(ON) t d(OFF) tR Fig.12a. Unclamped lnductive test circuit tF Fig.12b. Unclamped lnductive waveforms 15V BV DSS l AS L V DS DRIVER l D(t) V DS(t) RG D.U.T. l AS + V - DD V DD A 20V tP www.nellsemi.com Time 0.01Ω tp Page 5 of 7 RoHS RoHS IRF3205 Series SEMICONDUCTOR Nell High Power Products Single pulse avalanche energy, E AS (mJ) Fig.12c. Maximum avalanche energy vs. Drain current 500 lD 25A 44A 62A TOP 400 BOTTOM 300 200 100 0 25 75 50 100 125 150 175 Junction temperature, T J (°C) Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit Current Regulator Same Type as D.U.T. V GS 50KΩ QG 0.2µF 12V 10V 0.3µF + Q GD Q GS - D.U.T. V DS V GS 3mA lG Charge lD Current Sampling Resistors Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET D.U.T. Driver Gate Drive + Circuit Layout Considerations • Low Stray lnductance • Ground Plane • Low Leakage lnductance Current Transformer P.W. D= Period P.W. Period VGS=10V - D.U.T. I SD Waveform + - - RG Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform • • • • dv/dt controlled by R G Driver same type as D.U.T. l SD controlled by Duty Factor " D " D.U.T. -Device Under Test Re-Applied Voltage + - V DD Diode Recovery dv/dt Body Diode Forward Drop Inductor Curent Ripple ≤ 5% *V GS = 5V for Logic Level Devices www.nellsemi.com Page 6 of 7 VDD ISD * IRF3205 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) D (Drain) 2.79 (0.110) G (Gate) S (Source) All dimensions in millimeters(inches) www.nellsemi.com Page 7 of 7