APTRG8A120 VCmax = 1200V IOUTpeak = 8A @ Tc = 25°C Dual IGBT Isolated Driver +V1 VC1 SHORT CI RCUIT P ROTECTION 0V1 H1 Goff1 Logic Circuit 0V1 DRIVER 1 0V1 - V1 RESET Drive Interlock VC2 +V2 SHORT CI RCUIT P ROTECTION 0V2 GND Gon2 Goff2 + 5V 0/15V ISOLATED DC /DC C ON VERTER S +V2 0V2 DRIVER 2 +V1 +15V 0V2 0V1 -V1 -V2 0V2 -V2 VC 2 GND FAULT OUT RESET H2 H1 0/15V +15V Gon 2 Goff 2 0V 2 0V 1 Goff 1 Gon 1 VC 1 Features • Drive IGBTs up to IC=300A, VCE=1200V • Short circuit protection by VCEsat monitoring • Low speed overcurrent cut off to limit over voltage • Under voltage Lockout with hysteresis • Top Bottom input signals Interlock • Switching frequency up to 50 kHz • Low stray inductance • High level of integration • Isolated driver Benefits • Outstanding performance at high frequency operation • Rugged • Stable temperature behavior • Very high noise immunity (common mode rejection > 10kV/µs) • 2500V Galvanic Isolation primary/secondary • 5V logic level with Schmitt-trigger Input • Single VDD =15V supply required • Positive & Negative Secondary auxiliary power supplies internally generated • Separate sink & Source output for easy Gate drive (optimized turn on & turn off operation) • Mounting with screws for good vibration withstand • Solderable pins These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-4 APTRG8A120 – Rev 1 August, 2006 H2 FAULT OUT Gon1 Application • Driver dedicated to IGBT Power modules in : - Motor Control - Uninterruptible Power Supplies - Switched Mode Power Supplies - Welding converters - Automotive APTRG8A120 DUAL DRIVER CIRCUIT +5V IN1 1K 1nF IN2 CIRCUIT LOGIC 1nF 5.1V 2.7K 15V AUX. SUPPLY (1A) + 47MF 1nF G ND SHORT CIRCUIT PROTECT VCEsat 1nF + 5.1V HIGH POWER IGBT 1R 10W VC2 OUT V2 Gon2 0V2 2R 5W Goff2 1K +15V 0VBUS 0.5R 5W 0V1 -V1 FAU LT Memorisation 5.1V GND 2R 5W Goff1 INTERLOCK DRIVE FAULT OUT BUFFER Gon1 0V1 SOFT TURN OFF And UVLO And GND V1 0V1 BUFFER RESET +VBUS VC1 SHORT CIRCUIT PROTECT VCEsat TOP DRIVER GND +5V BUFFER PWM GEN ERATOR 5.1V 1K BUFFER FAU LT Memorisation BOTTOM DRIVER +5V GND 0V2 0V2 0.5R 5W HIGH POWER IGBT 1R 10W ISOLATED DC /DC CONVERTERS SOFT TURN OFF And UVLO -V2 0/15V 0VBUS G ND fig 1:Typical phase leg Operation Block Diagram All ratings @ Tj = 25°C unless otherwise specified Symbol VDD VHi Supply Voltage Input signal voltage i=1, 2 IVDDmax Maximum Supply current fmax VC IoutA Vmax R Gonmin R Goffmin Pout Parameter VHi = 0V, i =1, 2 VDD=15V, Fout = 25 kHz, Ceff=150nF Maximum Switching Frequency @ Tamb=85°C Collector Voltage short circuit protection pin Output Average Current Minimum resistance for RGon Minimum resistance for RGoff Output Power DC/DC converter www.microsemi.com Per Output Per Output Max ratings 16 5.5 0.3 1 50 1200 270 2 1 4 Unit V A kHz V mA Ω W 2-4 APTRG8A120 – Rev 1 August, 2006 Absolute maximum ratings APTRG8A120 Driver Electrical Characteristics Symbol VDD Characteristic Operating Supply Voltage Test Conditions Min 14.5 IVDD Operating Supply Current Fout =25kHz,VDD=15V,VBus=600V Ceff=150nF on Channel 1&2 VUVLO VHi(max) VHi(th+) VHi(th-) CHi RHi Under Voltage lockout threshold Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Capacitance * Input Resistance * VG(on) Turn on Gate Voltage Output VG(off) Turn off Gate Voltage Output Td(on) Td(off) PWD Turn On delay time Ceff = 150nF X Turn Off delay time Ceff = 150nF X Pulse Width Distortion Propagation Delay Difference Td(on) - Td(off) between any two driver Output fault current Fault condition High Output Fault Voltage No fault Low Output Fault Voltage Fault condition Desat Fault Output Delay Time VDD=15V Total Short Circuit Duration T sc=6µs, VBus=600V, VGE=15V Short Circuit Current Coupling Capacitance Primary Secondary Reset Pulse Width Logic high for reset Reset Input Resistance Fault output pull-up resistance PDD Ifault VfaultH VfaultL Tdfault TSC ISC CPS RPW RR FR Max 15.5 0.75 11.6 -0.5 2 i = 1, 2 Typ 15 12.3 5 Unit V A 13.5 5.5 V V 0.8 No Load 14 RGon=2Ω, Fout = 25kHz, Ceff =150nF No Load -7 RGoff=1Ω, Fout = 25kHz, Ceff =150nF 200 220 -0.3 1 1 15 14 -6 -5 400 420 0.02 nF kΩ 16 -5 500 520 0.3 0.35 -0.35 7 5 0.5 5 6 950 20 20 1 2.7 V ns µs mA V µs µs A pF µs kΩ * Low impedance guarantees good noise immunity. X Dead time between top and bottom inputs signals must be generated externally in case of phase leg operation Symbol VISOL TOP TSTG Torque Wt Characteristic Primary to Secondary Isolation Operating Ambient Temperature Storage Temperature Range Mounting torque Package Weight Min 2500 -40 -55 M3 Typ Max 85 100 0.5 120 www.microsemi.com Unit V °C N.m g 3-4 APTRG8A120 – Rev 1 August, 2006 Thermal and package characteristics APTRG8A120 Driver Package outline (dimensions in mm) VC 2 GND Gon 2 Goff 2 0V 2 FAULT OUT RESET H2 H1 0V 1 Goff 1 Gon 1 0/15V +15V VC 1 Frequency vs Gate effective Capacitor 110 100 90 FR Q (Khz) 80 70 60 50 40 Tamb=25°C 30 Tamb=70°C 20 0 0 25 50 75 100 125 150 175 200 225 250 275 300 CEFF (nF) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTRG8A120 – Rev 1 August, 2006 10