APTLGL325A1208G VCES = 1200V IC = 325A @ Tc = 80°C Phase leg Intelligent Power Module Application • Motor control • Uninterruptible Power Supplies • Switched Mode Power Supplies • Amplifier Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter 0/VBUS INL INH GND GND VDD VDD VBUS OUT Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very high noise immunity (common mode rejection > 25kV/µs) • Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer • 5V logic level with Schmitt-trigger Input • Single VDD=5V supply required • Secondary auxiliary power supplies internally generated (15V, -6V) • Optocoupler qualified to AEC-Q100 test quidelines • RoHS compliant These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTLGL325A1208G – Rev 0 February, 2011 • Low stray inductance • M5 power connectors • High level of integration APTLGL325A1208G All ratings @ Tj = 25°C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM PD Pulsed Collector Current Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C RBSOA Max ratings 1200 420 325 600 1500 Unit V A W 600A @ 1150V Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V VCE(sat) Collector Emitter Saturation Voltage VDD = VIN = 5V IC = 300A Min Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Typ 1.85 2.2 Max 500 750 2.2 Unit µA V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz Tr Rise Time Tf Fall Time Tr Tf Eon Rise Time Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy Inductive Switching (25°C) VDD = VIN = 5V VBus = 600V ; IC = 300A Inductive Switching (150°C) VDD = VIN = 5V VBus = 600V IC = 300A Isc Short Circuit data RthJC VDD = VIN = 5V; VBus =900V tp ≤ 10µs ; Tj = 150°C Junction to Case thermal resistance Min Typ 17.6 1.16 0.94 Max nF 30 ns 70 40 80 34 ns mJ 29 1100 A 0.1 www.microsemi.com Unit °C/W 2-6 APTLGL325A1208G – Rev 0 February, 2011 Symbol Cies Coes Cres APTLGL325A1208G Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 300A IF = 300A VR = 600V di/dt =7000A/µs Min 1200 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 360 1.7 1.65 155 300 29 Tj = 150°C Tj = 25°C Tj = 150°C 61 10.4 22 Max 250 750 Junction to Case Thermal Resistance Unit V µA A 2.2 V ns µC mJ 0.17 °C/W 2. Driver Absolute maximum ratings Symbol VDD VINi IVDDmax fmax Parameter Max ratings 5.5 5.5 0.35 2 55 Supply Voltage Input signal voltage i=L, H VINi = 0V, i =L & H VDD=5V, VINH = /VINL ; Fout = 55kHz Maximum Switching Frequency Maximum Supply current Unit V A kHz Driver Electrical Characteristics PDD VISOL Characteristic Operating Supply Voltage Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Resistance * Turn On delay time Built in dead time Turn Off delay time Pulse Width Distortion Propagation Delay Difference between any two driver Primary to Secondary Isolation Test Conditions Min 4.5 -0.5 i = L, H Driver + IGBT Driver + IGBT Typ 5 5 3.2 1 1 1100n 600 750 Max 5.5 5.5 Unit V V kΩ ns 300 Td(on) - Td(off) -350 2500 350 ns VRMS * Low impedance guarantees good noise immunity. n Including built in dead time. www.microsemi.com 3-6 APTLGL325A1208G – Rev 0 February, 2011 Symbol VDD VINi(max) VINi (th+) VINi(th-) RINi Td(on) DT Td(off) PWD APTLGL325A1208G 3. Package characteristics Symbol VISOL TJ TOP TSTG TC Characteristic Torque Mounting torque Wt Package Weight RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Operating Ambient Temperature Storage Temperature Range Operating Case Temperature To heatsink For terminals M5 M5 Min 2500 -40 -40 -40 -40 2 2 Typ Max 150 85 100 100 4.7 4 550 Unit V °C N.m g www.microsemi.com 4-6 APTLGL325A1208G – Rev 0 February, 2011 Ra 3,2 4. LP8 Package outline (dimensions in mm) APTLGL325A1208G Typical IGBT Performance Curve Output Characteristics Reverse Bias Safe Operating Area 600 640 VDD = 5V VIN = 5V 500 480 TJ=150°C IC (A) IC (A) TJ=25°C 400 300 320 200 160 100 TJ=150°C 0 0 0 1 2 VCE (V) 3 0 4 E (mJ) Fmax, Operating Frequency (kHz) VCE= 600V VIN = 5V VDD = 5V TJ = 150°C 48 32 Eoff 16 Eon 0 0 100 200 300 400 500 600 VCE (V) 900 1200 Operating Frequency vs Collector Current Energy losses vs Collector Current 80 64 300 600 60 VCE=600V D=50% VDD=5V VIN = 5V TJ=150°C Tc=75°C 50 40 30 20 Limited by internal gate drive power dissipation 10 Hard switching 0 0 100 IC (A) 200 300 IC (A) 400 500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTLGL325A1208G – Rev 0 February, 2011 Thermal Impedance (°C/W) 0.12 APTLGL325A1208G Typical diode Performance Curve Forward Characteristic of diode Energy losses vs Collector Current 32 600 VR= 600V TJ = 150°C 24 400 Err (mJ) IF, Forward Current (A) TJ=25°C 500 300 200 TJ=150°C 8 100 0 0 0.5 16 1 1.5 2 0 2.5 0 100 VF, Anode to Cathode Voltage (V) 200 300 400 500 600 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.14 D = 0.9 0.7 0.12 0.1 0.5 0.08 0.06 0.04 0.3 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 6-6 APTLGL325A1208G – Rev 0 February, 2011 Rectangular Pulse Duration in Seconds