UNISONIC TECHNOLOGIES CO., LTD UTD3055 Preliminary Power MOSFET POWER MOSFET 12 AMPS, 60 VOLTS N–CHANNEL DPAK DESCRIPTION The UTC UTD3055 is an N-channel Power MOSFET, and it can withstand high energy in the avalanche and commutation modes. The UTC UTD3055 is needed for applications, such as power supplies, converters and power motor controls which require low voltage and high speed switching. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. FEATURES * IDSS and VDS(on) Specified At Elevated Temperature * Avalanche Energy Specified SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Package UTD3055G-TN3-R Note: D; Drain, G: Gate, S: Source TO-252 www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S Packing Tape Reel 1 of 4 QW-R502-460.a UTD3055 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VDSS VDGR VGS VGSM ID ID IDM RATINGS 60 60 ±20 ±25 12 7.3 37 Drain-Source Voltage Drain-Gate Voltage (RGS=1.0MΩ) Continuous Gate-Source Voltage Non-Repetitive (tP≤10µs) Continuous @ 25°C Drain Current Continuous @ 100°C Single Pulse (tP≤10µs) Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C 72 EAS (VDD = 25 V, VGS = 10 V, IL = 12 A, L = 1.0 mH, RG = 25 Ω ) Total Power Dissipation @ 25°C 48 PD Total Power Dissipation @ TA = 25°C, when mounted to 1.75 minimum recommended pad size Operating Junction Temperature TJ -55~175 Storage Temperature TSTG -55~175 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. mJ W W °C °C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNIT V V V V A A A SYMBOL θJA θJC RATINGS 100 3.13 UNIT W/°C W/°C ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate- Source Leakage Current ON CHARACTERISTICS (Note) IGSS TEST CONDITIONS ID=250µA, VGS=0V Temperature Coefficient (Positive) VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=150°C VGS=±20V, VDS=0 MIN TYP MAX UNIT 60 V mV/°C 65 10 100 100 Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 Temperature Coefficient (Negative) 2.7 5.4 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.0A 0.10 0.15 Drain-Source On-Votlage (VGS=10V) VDS(on) ID=12A ID=6.0A, TJ=150°C VDS=7.0V, ID=6.0A 1.3 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4.0 4.0 2.2 1.9 5.0 410 130 25 µA nA V mV/°C Ω V S 500 180 50 pF pF pF 2 of 4 QW-R502-460.a UTD3055 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SWITCHING PARAMETERS (Note 2) SYMBOL QT Q1 Q2 Q3 Gate Charge TEST CONDITIONS VGS=10V, VDS=48V, ID=12A Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=12A, RG=9.1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage IS=12A, VGS=0V VSD (Note 1) IS=12A, VGS=0V, TJ=150°C tRR Reverse Recovery Time tA IS=12A, VGS=0V, dIs/dt=100A/µs tB Reverse Recovery Charge QRR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25’’ LD from package to center of die) Internal Source Inductance (Measured from the source lead 0.25, LS from package to source bond pad) Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. 2. Switching characteristics are independent of operating junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 12.2 3.2 5.2 5.5 7.0 34 17 18 17 10 60 30 50 1.0 1.6 0.91 56 40 16 0.128 nC nC nC nC ns ns ns ns V ns ns ns µC 4.5 nH 7.5 nH 3 of 4 QW-R502-460.a UTD3055 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-460.a